DE69715962D1 - Plasma Behandlung Anlage und Behandlung-Methode - Google Patents

Plasma Behandlung Anlage und Behandlung-Methode

Info

Publication number
DE69715962D1
DE69715962D1 DE69715962T DE69715962T DE69715962D1 DE 69715962 D1 DE69715962 D1 DE 69715962D1 DE 69715962 T DE69715962 T DE 69715962T DE 69715962 T DE69715962 T DE 69715962T DE 69715962 D1 DE69715962 D1 DE 69715962D1
Authority
DE
Germany
Prior art keywords
treatment
facility
plasma
treatment method
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69715962T
Other languages
English (en)
Other versions
DE69715962T2 (de
Inventor
Koji Teranishi
Atsushi Yamagami
Satoshi Takaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69715962D1 publication Critical patent/DE69715962D1/de
Application granted granted Critical
Publication of DE69715962T2 publication Critical patent/DE69715962T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69715962T 1996-05-21 1997-05-20 Plasma Behandlung Anlage und Behandlung-Methode Expired - Lifetime DE69715962T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12577096A JP3437376B2 (ja) 1996-05-21 1996-05-21 プラズマ処理装置及び処理方法

Publications (2)

Publication Number Publication Date
DE69715962D1 true DE69715962D1 (de) 2002-11-07
DE69715962T2 DE69715962T2 (de) 2003-06-18

Family

ID=14918408

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69715962T Expired - Lifetime DE69715962T2 (de) 1996-05-21 1997-05-20 Plasma Behandlung Anlage und Behandlung-Methode

Country Status (5)

Country Link
US (2) US6145469A (de)
EP (1) EP0808918B1 (de)
JP (1) JP3437376B2 (de)
KR (1) KR100276599B1 (de)
DE (1) DE69715962T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3437376B2 (ja) * 1996-05-21 2003-08-18 キヤノン株式会社 プラズマ処理装置及び処理方法
JP2921499B2 (ja) * 1996-07-30 1999-07-19 日本電気株式会社 プラズマ処理装置
JP5165825B2 (ja) * 2000-01-10 2013-03-21 東京エレクトロン株式会社 分割された電極集合体並びにプラズマ処理方法。
JP2001323379A (ja) 2000-05-15 2001-11-22 Canon Inc 堆積膜形成装置および堆積膜形成方法
JP2002030447A (ja) * 2000-07-11 2002-01-31 Canon Inc プラズマ処理方法及びプラズマ処理装置
KR100829327B1 (ko) * 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
KR100837474B1 (ko) * 2003-03-04 2008-06-12 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리장치 및 디바이스의 제조방법
JP4298401B2 (ja) * 2003-06-27 2009-07-22 キヤノン株式会社 堆積膜形成装置、及び堆積膜形成方法
DE102004009735A1 (de) * 2004-02-25 2005-09-15 Endress + Hauser Gmbh + Co. Kg Meßgerät mit Anzeigevorrichtung
US20070048456A1 (en) * 2004-09-14 2007-03-01 Keshner Marvin S Plasma enhanced chemical vapor deposition apparatus and method
US8251012B2 (en) * 2005-03-01 2012-08-28 Hitachi Kokusai Electric Inc. Substrate processing apparatus and semiconductor device producing method
WO2007111348A1 (ja) * 2006-03-28 2007-10-04 Hitachi Kokusai Electric Inc. 基板処理装置
US20080139003A1 (en) * 2006-10-26 2008-06-12 Shahid Pirzada Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
JP5568212B2 (ja) * 2007-09-19 2014-08-06 株式会社日立国際電気 基板処理装置、そのコーティング方法、基板処理方法及び半導体デバイスの製造方法
TWI477646B (zh) * 2010-08-09 2015-03-21 Hon Hai Prec Ind Co Ltd 化學氣相沉積設備
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
US9932252B2 (en) 2013-05-01 2018-04-03 Nch Corporation System and method for treating water systems with high voltage discharge and ozone
US9868653B2 (en) * 2013-05-01 2018-01-16 Nch Corporation System and method for treating water systems with high voltage discharge and ozone
US11390950B2 (en) * 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158717A (en) * 1977-02-14 1979-06-19 Varian Associates, Inc. Silicon nitride film and method of deposition
DE2908123A1 (de) * 1978-03-03 1979-09-06 Canon Kk Bildaufzeichnungsmaterial fuer elektrophotographie
CA1269950C (en) * 1984-06-22 1990-06-05 DEVICE FOR DECOMPOSITION BY GLOWING DISCHARGE
JPH04362091A (ja) * 1991-06-05 1992-12-15 Mitsubishi Heavy Ind Ltd プラズマ化学気相成長装置
US5383984A (en) * 1992-06-17 1995-01-24 Tokyo Electron Limited Plasma processing apparatus etching tunnel-type
US5277751A (en) * 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
TW249313B (de) * 1993-03-06 1995-06-11 Tokyo Electron Co
WO2004083486A1 (ja) * 1993-03-23 2004-09-30 Atsushi Yamagami 超短波を用いたプラズマcvd法及び該プラズマcvd装置
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US6065425A (en) 1996-03-25 2000-05-23 Canon Kabushiki Kaisha Plasma process apparatus and plasma process method
JP3437376B2 (ja) * 1996-05-21 2003-08-18 キヤノン株式会社 プラズマ処理装置及び処理方法
US5970907A (en) 1997-01-27 1999-10-26 Canon Kabushiki Kaisha Plasma processing apparatus

Also Published As

Publication number Publication date
EP0808918A2 (de) 1997-11-26
KR100276599B1 (ko) 2000-12-15
EP0808918A3 (de) 1998-10-28
EP0808918B1 (de) 2002-10-02
DE69715962T2 (de) 2003-06-18
JPH09310181A (ja) 1997-12-02
US6145469A (en) 2000-11-14
US6558507B1 (en) 2003-05-06
KR970077336A (ko) 1997-12-12
JP3437376B2 (ja) 2003-08-18

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