HK1042812B - 等離子體處理設備和等離子體處理方法 - Google Patents

等離子體處理設備和等離子體處理方法

Info

Publication number
HK1042812B
HK1042812B HK02104502.1A HK02104502A HK1042812B HK 1042812 B HK1042812 B HK 1042812B HK 02104502 A HK02104502 A HK 02104502A HK 1042812 B HK1042812 B HK 1042812B
Authority
HK
Hong Kong
Prior art keywords
plasma treatment
treatment apparatus
treatment method
plasma
treatment
Prior art date
Application number
HK02104502.1A
Other languages
English (en)
Other versions
HK1042812A1 (en
Inventor
山崎圭一
猪岡結希子
澤田康志
田口典幸
中園佳幸
仲野章生
Original Assignee
松下電工株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 松下電工株式會社 filed Critical 松下電工株式會社
Publication of HK1042812A1 publication Critical patent/HK1042812A1/xx
Publication of HK1042812B publication Critical patent/HK1042812B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
HK02104502.1A 2000-06-06 2002-06-18 等離子體處理設備和等離子體處理方法 HK1042812B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000169571 2000-06-06

Publications (2)

Publication Number Publication Date
HK1042812A1 HK1042812A1 (en) 2002-08-23
HK1042812B true HK1042812B (zh) 2005-01-21

Family

ID=18672411

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02104502.1A HK1042812B (zh) 2000-06-06 2002-06-18 等離子體處理設備和等離子體處理方法

Country Status (6)

Country Link
US (1) US6670766B2 (zh)
EP (1) EP1162646A3 (zh)
KR (1) KR100456442B1 (zh)
CN (1) CN1165208C (zh)
HK (1) HK1042812B (zh)
TW (1) TWI223576B (zh)

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US6821379B2 (en) 2001-12-21 2004-11-23 The Procter & Gamble Company Portable apparatus and method for treating a workpiece
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EP1441577A4 (en) * 2002-02-20 2008-08-20 Matsushita Electric Works Ltd PLASMA PROCESSING DEVICE AND METHOD
US7513971B2 (en) 2002-03-18 2009-04-07 Applied Materials, Inc. Flat style coil for improved precision etch uniformity
US7022937B2 (en) * 2003-01-06 2006-04-04 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus for performing uniform plasma processing on a linear portion of an object
KR100625425B1 (ko) * 2003-06-05 2006-09-15 다이킨 고교 가부시키가이샤 방전장치 및 공기정화장치
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
SG114754A1 (en) * 2004-02-25 2005-09-28 Kulicke & Soffa Investments Laser cleaning system for a wire bonding machine
JP3742863B2 (ja) * 2004-07-02 2006-02-08 ダイキン工業株式会社 空気浄化装置
US20060156983A1 (en) * 2005-01-19 2006-07-20 Surfx Technologies Llc Low temperature, atmospheric pressure plasma generation and applications
US20060219754A1 (en) * 2005-03-31 2006-10-05 Horst Clauberg Bonding wire cleaning unit and method of wire bonding using same
US8328982B1 (en) * 2005-09-16 2012-12-11 Surfx Technologies Llc Low-temperature, converging, reactive gas source and method of use
JP4578412B2 (ja) * 2006-01-20 2010-11-10 日本碍子株式会社 放電プラズマ発生方法
US8632651B1 (en) 2006-06-28 2014-01-21 Surfx Technologies Llc Plasma surface treatment of composites for bonding
US7550927B2 (en) * 2006-11-09 2009-06-23 Applied Materials, Inc. System and method for generating ions and radicals
JP5158084B2 (ja) * 2007-08-31 2013-03-06 東芝三菱電機産業システム株式会社 誘電体バリア放電ガスの生成装置
JP4296523B2 (ja) * 2007-09-28 2009-07-15 勝 堀 プラズマ発生装置
DE212007000107U1 (de) * 2007-10-19 2010-09-02 MKS Instruments, Inc., Wilmington Ringförmige Plasmakammer für Prozesse mit hohen Gasdurchflussraten
JP5145076B2 (ja) * 2008-02-22 2013-02-13 Ｎｕエコ・エンジニアリング株式会社 プラズマ発生装置
JP2010095595A (ja) * 2008-10-15 2010-04-30 Seiko Epson Corp 接合方法および接合体
JP2010095594A (ja) * 2008-10-15 2010-04-30 Seiko Epson Corp 接合方法および接合体
TWI387400B (zh) * 2008-10-20 2013-02-21 Ind Tech Res Inst 電漿系統
JP4977730B2 (ja) * 2009-03-31 2012-07-18 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング装置
US8664561B2 (en) * 2009-07-01 2014-03-04 Varian Semiconductor Equipment Associates, Inc. System and method for selectively controlling ion composition of ion sources
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
KR101538874B1 (ko) * 2010-11-24 2015-07-22 비코 에이엘디 인코포레이티드 대형 기판상에 원자층 증착을 수행하기 위한 다중 섹션을 구비한 연장된 반응기 조립체
US8581496B2 (en) * 2011-07-29 2013-11-12 Oaks Plasma, LLC. Self-igniting long arc plasma torch
US20140174359A1 (en) * 2011-09-09 2014-06-26 Toshiba Mitsubishi-Electric Industrial Systems Corporation Plasma generator and cvd device
US20130087287A1 (en) * 2011-10-10 2013-04-11 Korea Institute Of Machinery & Materials Plasma reactor for removal of contaminants
KR101727243B1 (ko) * 2011-12-16 2017-04-18 한국전자통신연구원 플라즈마 브러시
US10800092B1 (en) 2013-12-18 2020-10-13 Surfx Technologies Llc Low temperature atmospheric pressure plasma for cleaning and activating metals
US10032609B1 (en) 2013-12-18 2018-07-24 Surfx Technologies Llc Low temperature atmospheric pressure plasma applications
US9406485B1 (en) 2013-12-18 2016-08-02 Surfx Technologies Llc Argon and helium plasma apparatus and methods
WO2016103510A1 (ja) * 2014-12-26 2016-06-30 日本テクノリード株式会社 透明基板上にパターニングされた導電性高分子層を有する積層基板の製造方法及びメタルメッシュ基板の製造方法
JP2017045714A (ja) * 2015-08-28 2017-03-02 東洋製罐グループホールディングス株式会社 高周波誘電加熱方法
US10827601B1 (en) 2016-05-03 2020-11-03 Surfx Technologies Llc Handheld plasma device
JP7301075B2 (ja) 2018-06-14 2023-06-30 エムケーエス インストゥルメンツ，インコーポレイテッド リモートプラズマ源用のラジカル出力モニタ及びその使用方法
CN111465160A (zh) * 2020-05-14 2020-07-28 国网重庆市电力公司电力科学研究院 一种等离子体射流发生装置及系统

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JP3972393B2 (ja) 1995-12-19 2007-09-05 セイコーエプソン株式会社 表面処理方法及び装置、圧電素子の製造方法、インクジェット用プリントヘッドの製造方法、液晶パネルの製造方法、並びにマイクロサンプリング方法
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DE19643865C2 (de) * 1996-10-30 1999-04-08 Schott Glas Plasmaunterstütztes chemisches Abscheidungsverfahren (CVD) mit entfernter Anregung eines Anregungsgases (Remote-Plasma-CVD-Verfahren) zur Beschichtung oder zur Behandlung großflächiger Substrate und Vorrichtung zur Durchführung desselben
FR2782837B1 (fr) * 1998-08-28 2000-09-29 Air Liquide Procede et dispositif de traitement de surface par plasma a pression atmospherique
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JP3555470B2 (ja) 1998-12-04 2004-08-18 セイコーエプソン株式会社 大気圧高周波プラズマによるエッチング方法
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
JP3219082B2 (ja) 2000-01-20 2001-10-15 日本電気株式会社 データ格納方法

Also Published As

Publication number Publication date
US20020008480A1 (en) 2002-01-24
US6670766B2 (en) 2003-12-30
HK1042812A1 (en) 2002-08-23
CN1165208C (zh) 2004-09-01
KR100456442B1 (ko) 2004-11-09
EP1162646A2 (en) 2001-12-12
KR20020003503A (ko) 2002-01-12
TWI223576B (en) 2004-11-01
CN1334694A (zh) 2002-02-06
EP1162646A3 (en) 2004-10-13

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20090606