CA2313767A1 - Metal material for electronic parts, electronic parts, electronic apparatuses, and method of processing metal materials - Google Patents

Metal material for electronic parts, electronic parts, electronic apparatuses, and method of processing metal materials Download PDF

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Publication number
CA2313767A1
CA2313767A1 CA002313767A CA2313767A CA2313767A1 CA 2313767 A1 CA2313767 A1 CA 2313767A1 CA 002313767 A CA002313767 A CA 002313767A CA 2313767 A CA2313767 A CA 2313767A CA 2313767 A1 CA2313767 A1 CA 2313767A1
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CA
Canada
Prior art keywords
metal material
electrode
electronic parts
contact
wiring pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002313767A
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French (fr)
Other versions
CA2313767C (en
Inventor
Takashi Ueno
Katsuhisa Aratani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furuya Metal Co Ltd
Sony Corp
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Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2313767A1 publication Critical patent/CA2313767A1/en
Application granted granted Critical
Publication of CA2313767C publication Critical patent/CA2313767C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53247—Noble-metal alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Weting (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Liquid Crystal (AREA)

Abstract

The present invention relates to a metal material for electronic parts, electronic parts, electronic apparatuses, a method of processing metal materials, and electro-optical parts. For example, the present invention is applied to liquid crystal display panels, various semiconductor devices, wiring boards, chip parts, and the like. The present invention proposes a metal material for electronic parts which is characterized by lower resistivity, higher stability, and more excellent processability than the prior art. The present invention also proposes electronic parts and electronic apparatuses which use this metal material. An applicable metal material is an alloy containing Ag as a main component, 0.1 to 3 wt% of Pd, and 0.1 to 3 wt% in total of elements such as Al.

Claims (32)

1. A metal material containing Ag as a main component for electronic parts wherein:

the metal material comprises an alloy containing 0.1 to 3 wt% of Pd and 0.1 to 3 wt% in total of at least any one or a plurality of elements selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, and Si.
2. The metal material for electronic parts as described in claim 1 wherein:

said metal material for electronic parts is a wiring material.
3. The metal material for electronic parts as described in claim 1 wherein:

an electrical resistivity is 3 µ.OMEGA.cm or less.
4. The metal material for electronic parts as described in claim 1 wherein:

said metal material for electronic parts is an electrode material.
5. The metal material for electronic parts as described in claim 1 wherein:

said metal material for electronic parts is a contact material.
6. The metal material for electronic parts as described in claim 1 wherein:

said metal material for electronic parts is a sputtering target material.
7. A metal material containing Ag as a main component for electronic parts wherein:

the metal material comprises a ternary alloy containing 0.1 to 3 wt% of Pd and 0.1 to 3 wt% of one element selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, and Si.
8. The metal material for electronic parts as described in claim 7 wherein:

said metal material for electronic parts is a wiring material.
9. The metal material for electronic parts as described in claim 7 wherein:

an electrical resistivity is 1.6 µ.OMEGA.cm or more and 3.5 µ.OMEGA.cm or less.
10. The metal material for electronic parts as described in claim 7 wherein:

said metal material for electronic parts is an electrode material.
11. The metal material for electronic parts as described in claim 7 wherein:

said metal material for electronic parts is a sputtering target material.
12. An electronic part having a wiring pattern, electrode, or contact made of a specific metal material wherein:

said metal material comprises an alloy containing Ag as a main component 0.1 to 3 wt% of Pd and 0.1 to 3 wt% in total of one or a plurality of elements selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, and Si.
13. The electronic part as described in claim 12 wherein:

said wiring pattern, electrode, or contact is formed by means of etching through use of a solution containing phosphoric acid.
14. The electronic part as described in claim 12 wherein:

said wiring pattern, electrode, or contact is formed by means of etching in a gas atmosphere containing chlorine.
15. The electronic part as described in claim 12 wherein:

portions other than said wiring pattern, electrode, and contact are processed by means of etching in a gas atmosphere containing fluorine.
16. The electronic part as described in claim 12 wherein:

said wiring pattern, electrode, or contact is heat-treated at a temperature ranging from 300°C to 750°C.
17. The electronic part as described in claim 12 wherein:

said wiring pattern, electrode, or contact is formed on a substrate made of W, Ta, Mo, indium tin oxide, titanium nitride, silicon oxide, or silicon nitride.
18. The electronic part as described in claim 12 wherein:

said wiring pattern, electrode, or contact is directly formed on a glass or plastic board.
19. An electronic apparatus having a wiring pattern, electrode, or contact made of a specific metal material wherein:

said metal material comprises an alloy containing Ag as a main component 0.1 to 3 wt% of Pd and 0.1 to 3 wt% in total of one or a plurality of elements selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, and Si.
20. The electronic apparatus as described in claim 19 wherein:

said wiring pattern, electrode, or contact is formed by means of etching through use of a solution containing phosphoric acid.
21. The electronic apparatus as described in claim 19 wherein:
said wiring pattern, electrode, or contact is formed by means of etching in a gas atmosphere containing chlorine.
22. The electronic apparatus as described in claim 19 wherein:
portions other than said wiring pattern, electrode, and contact are processed by means of etching in a gas atmosphere containing fluorine.
23. The electronic apparatus as described in claim 19 wherein:
said wiring pattern, electrode, or contact is heat-treated at a temperature ranging from 300°C to 750°C.
24. The electronic apparatus as described in claim 19 wherein:
said wiring pattern, electrode, or contact is formed on a substrate made of W, Ta, Mo, indium tin oxide, titanium nitride, silicon oxide, or silicon nitride.
25. The electronic apparatus as described in claim 19 wherein:
said wiring pattern, electrode, or contact is directly formed on a glass or plastic board.
26. A method of processing metal materials wherein:
the method forms a wiring pattern, electrode, or contact by using a solution containing phosphoric acid for etching a metal film of alloy containing;
Ag as a main component, 0.1 to 3 wt% of Pd, and 0.1 to 3 wt% in total of one or a plurality of elements selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, and Si.
27. A method of processing metal materials wherein:
the method forms a wiring pattern, electrode, or contact by using a solution containing hydrochloric acid for etching a metal film of alloy containing;
Ag as a main component, 0.1 to 3 wt% of Pd, and 0.1 to 3 wt% in total of one or a plurality of elements selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, and Si.
28. A method of processing electronic parts wherein:
the method performs etching in a gas atmosphere containing fluorine to process materials other than a metal film of alloy containing;
Ag as a main component, 0.1 to 3 wt% of Pd, and 0.1 to 3 wt% in total of one or a plurality of elements selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, and Si.
29. A method of processing metal materials wherein:
the method forms a wiring pattern, electrode, or contact by heat-treating at a temperature ranging from 300°C to 750°C a metal film of alloy containing;
Ag as a main component, 0.1 to 3 wt% of Pd, and 0.1 to 3 wt% in total of one or a plurality of elements selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, and Si.
30. A method of processing metal materials wherein:
the method forms a wiring pattern, electrode, or contact by forming a metal film of alloy containing;
Ag as a main component, 0.1 to 3 wt% of Pd, and 0.1 to 3 wt% in total of one or a plurality of elements selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, and Si on an underlayer material made of W, Ta, Mo, indium tin oxide, titanium nitride, silicon oxide, silicon nitride or amorphous silicon.
31. A method of processing metal materials wherein:
the method forms a wiring pattern, electrode, or contact by directly forming a metal film of alloy containing;
Ag as a main component, 0.1 to 3 wt% of Pd, and 0.1 to 3 wt% in total of one or a plurality of elements selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, on a glass, plastic or Si board.
32. An electro-optical part characterized by using a reflection film or an electrode or wiring material made of a metal film of alloy containing wherein:
Ag as a main component, 0.1 to 3 wt% of Pd, and 0.1 to 3 wt% in total of one or a plurality of elements selected from a group consisting of Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, and Si.
CA2313767A 1999-07-12 2000-07-12 Metal material for electronic parts, electronic parts, electronic apparatuses, and method of processing metal materials Expired - Fee Related CA2313767C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP19687899 1999-07-12
JPP11-196878 1999-07-12
JP2000092980A JP4247863B2 (en) 1999-07-12 2000-03-28 Metal materials for electronic components, wiring materials for electronic components, electrode materials for electronic components, electronic components, electronic equipment, processing methods for metal materials, and electro-optical components
JPP2000-092980 2000-03-28

Publications (2)

Publication Number Publication Date
CA2313767A1 true CA2313767A1 (en) 2001-01-12
CA2313767C CA2313767C (en) 2010-09-28

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US (1) US6723281B1 (en)
EP (1) EP1069194B1 (en)
JP (1) JP4247863B2 (en)
KR (1) KR100715405B1 (en)
CN (1) CN1165990C (en)
CA (1) CA2313767C (en)
DE (1) DE60022951T2 (en)
ID (1) ID26547A (en)
MX (1) MXPA00006720A (en)
MY (1) MY127011A (en)
TW (1) TW457650B (en)

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DE60022951T2 (en) 2006-07-20
MXPA00006720A (en) 2007-05-08
EP1069194A1 (en) 2001-01-17
ID26547A (en) 2001-01-18
JP2001192752A (en) 2001-07-17
CN1280387A (en) 2001-01-17
CA2313767C (en) 2010-09-28
KR20010029930A (en) 2001-04-16
KR100715405B1 (en) 2007-05-08
CN1165990C (en) 2004-09-08
EP1069194B1 (en) 2005-10-05
DE60022951D1 (en) 2005-11-10
TW457650B (en) 2001-10-01
MY127011A (en) 2006-11-30
JP4247863B2 (en) 2009-04-02
US6723281B1 (en) 2004-04-20

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