574383 五、發明説明（1 ) 【本發明之領域】 本發明係關於-種有機電激發光顯示裝置導 =之合金乾材，尤指一種適用於半導體基板或有機電: 毛光顯示裝置顯示基板之導線或電極之薄膜電極入 細士士 A 口至 【本發明之背景】 平面顯示器（例如0LED等）由於具有輕薄短小 性，因此漸漸取代陰極射線管顯示器成為顯示器之隹點。 平面顯示器（如0LED等）之組成構造或其顯示 象《技術手段雖各有差異，但各式平面顯示器結構中多 利用具導電性物質（例如銦錫氧化物⑽Tin 〇仙；ΙΤ〇)或銘鋅氧化物（AluminumZine〇xide; =0)於基板上作為陽極，再配合低功函數金屬或合金之 陰極作為發光像素之控制結構。 π觀目刖之半導體或有機電激發光顯示裝置，多使用 絡金屬作為導線之材料。路金屬本身雖具有一定的導電 性、艮好的抗腐触性及材料成本低等材質特點，但是以絡 金屬作為導電薄膜電極時，因為路本身的電阻植高於銅、 :寺，屬，、故有不易達到低電壓驅動發光層顯㈣像之情 襄各^平υ Τ &的影像呈現方面無法達到最佳的控 η，同時，其電阻値略高，會因升溫而使耗電量增 4、1 源使用效率，且於操作時，會使該平面顯示器 溫，並會影響介於導電薄膜陽極與低功率函數陰極間發 L本紙張尺度適用中國國家標準（CNS} 公楚）_ 574383 五、發明説明（2 ) 光層之影像顯示。因此研究者一直在聋 令凰於， 直在+求利用阻値較低之 金屬作為晶片或顯不裝置導線之材 钮你、Α θ Τ以任冒經有提議以 銀作為晶片或顯示裝置導線之材料，但是因為益適當釋定 乏靶材或蝕刻液組成物，所以並未有廣泛之運用。〜 而含銀量超過8〇%以上之銀合金，雖^値未若銀金 屬一般低，但是其阻値遠低於路金屬，仍為適當之晶片或 顯示裝置導線材料，然而由於銀合金未具有適當之革巴材或 蝕刻液，所以並沒有廣泛應用於晶片或面板之黃光製程。 發明人I因於此，本於積極發明之精#，虽思一種可 以解決上ϋ問題纟「導電薄膜電極用之合金革巴材」，幾經 研究實驗終至完成此項嘉惠世人之發明。 【本發明之概述】 本發明之主要目的係在提供一種有機電激發光顯示裝 置導電薄膜電極用之合金革巴材，俾能於賤錢時，於面板或 基板上形成電阻値低、導電性佳及高附著性之導電薄膜電 極或輔助電極。 、本發明之另一目的係在提供一種有機電激發光顯示裝 置導電薄膜電極用合金乾材之製造方法，俾能形成一合金 靶材，以於濺鍍時，於面板或基板上形成電阻値低、導電 性佳及高附著性之導電薄膜電極合金。 為達成上述之目的，本發明有機電激發光顯示裝置導 電薄膜電極用之合金革巴材，係包括銀（Ag)、銅（Cu)以及 至少一種貴重金屬選自由鈀（pd)、金、鉑構成 --------------β 裝---------^-------- (請先閲讀背面之注意事項再填寫本頁各欄)574383 V. Description of the invention (1) [Field of the invention] The present invention relates to a dry alloy material of an organic electroluminescent display device, especially a semiconductor substrate or organic electricity: a display substrate for a gross light display device The thin-film electrode of the wire or the electrode is inserted into the mouth of A-Shishi to [Background of the present invention] The flat-panel display (such as 0LED, etc.) has gradually replaced the cathode-ray tube display as the point of display due to its lightness, shortness, and shortness. The composition and structure of flat-panel displays (such as 0LEDs), or their display images, "Although there are differences in technical means, conductive structures (such as indium tin oxide ⑽ Tin 〇 仙; ΙΤ〇) or inscriptions are used in various flat-display structures. Zinc oxide (AluminumZineOxide; = 0) is used as the anode on the substrate, and the cathode of the low work function metal or alloy is used as the control structure of the light emitting pixel. For π-viewing semiconductor or organic electroluminescent display devices, metal complexes are often used as the material of the wires. Although the road metal itself has certain electrical characteristics, good corrosion resistance, and low material costs, but when the metal is used as a conductive film electrode, the resistance of the road itself is higher than that of copper. Therefore, it is difficult to achieve low-voltage driving of the light-emitting layer to display the image. Therefore, the best control of the image rendering cannot be achieved. At the same time, its resistance is slightly higher, which will cause power consumption due to heating. Increasing the use efficiency of 4, 1 source, and during operation, it will make the flat display temperature, and will affect the hair between the conductive film anode and the low-power function cathode. This paper size is applicable to Chinese National Standards (CNS). _ 574383 V. Description of the invention (2) Image display of light layer. Therefore, researchers have been deaf, and have been seeking to use a lower resistance metal as the material of the chip or the display device wire to push you, A θ Τ. Any proposal has been made to use silver as the chip or display device wire Materials, but because the target or etching solution composition is properly defined, it has not been widely used. ~ For silver alloys with a silver content of more than 80%, although ^ 金属 is not as low as that of silver metal, its resistance is much lower than that of road metal, and it is still a suitable wafer or display device wire material. However, due to the lack of silver alloy It has the appropriate leather material or etching solution, so it is not widely used in the yellow light process of wafers or panels. Because of this, the inventor originally developed the essence of the positive invention #, although thinking about a kind of solution that can solve the problem 纟 “alloy leather material for conductive thin-film electrodes”, after several research experiments, this invention that benefited the world was completed. [Summary of the present invention] The main object of the present invention is to provide an alloy leather material for conductive thin-film electrodes of organic electroluminescent display devices, which can form low resistance and conductivity on the panel or substrate when the money is cheap. Good and high adhesion conductive thin film electrode or auxiliary electrode. 2. Another object of the present invention is to provide a method for manufacturing an alloy dry material for a conductive thin film electrode of an organic electroluminescent display device, which can form an alloy target to form a resistance on a panel or substrate during sputtering. Conductive thin film electrode alloy with low, good conductivity and high adhesion. In order to achieve the above object, the alloy leather material for the conductive thin film electrode of the organic electroluminescent display device of the present invention includes silver (Ag), copper (Cu), and at least one precious metal selected from the group consisting of palladium (pd), gold, and platinum. Composition -------------- β equipment --------- ^ -------- (Please read the precautions on the back before filling in the columns on this page)
574383574383
五、發明説明（3 ) ^組群；其中銀含量為8〇至99.8原子百分比；銅含量為 .1至10原子百分比；該貴重金屬含量為〇1至1〇原子百 刀比，且該合金乾材該合金之總原子百分比為⑽。 、本發明有機電激發光顯示裝置導電薄膜電極用合金革巴 材< 製造方法’係包含下述之步驟：先將銀（Ag)，铜（CM 以及至少-種貴重金屬，依適當比例混合備料，置於眞空 中约為10-1〜10-3torr，以電孤溶化產生母合金。其中銀 含量為80至99.8原子百分比；銅含量為〇1至1〇原子百分 比；該貴重金屬含量為0.1至1〇原子百分比。 依據所欲配製的合金比例及鑄錠重量，計算尚需添加 的數量，將先前所製成之母合金與銀混合備料，置於 眞空熔煉爐中進行熔煉，待混合料完全熔化後，將金屬熔 #倒入模具中，待其冷卻固化後，自模具中取出銀合金禱 錠。所得之鑄錠依所需之靶材尺寸，再進行熱機加工，以 形成該合金把材。 .由於本發明確有增進功效，故依法申請發明專利。 【圖式簡單説明】 第1圖係本發明有機電激發光顯示裝置導電薄膜電極合金 靶材之濺鍍實施時之示意圖。 【圖號説明】 100 直流電源供應器200靶材 25〇接地遮蔽物 (請先閲讀背面之注意事項再填寫本頁各欄) 一裝 -----訂-------- 本紙張尺度適用中國國家標準（CNS ) A4 ^ (210X297^17 574383V. Description of the invention (3) ^ group; wherein the silver content is 80 to 99.8 atomic percent; the copper content is .1 to 10 atomic percent; the precious metal content is 0.01 to 10 atomic hundred sword ratio, and the alloy The total atomic percentage of the alloy in dry material is rhenium. The alloy leather material for conductive thin-film electrodes of the organic electroluminescent display device of the present invention < Manufacturing method 'includes the following steps: silver (Ag), copper (CM, and at least one kind of precious metal, mixed in an appropriate ratio) Prepare the material and place it in the air at about 10-1 ~ 10-3torr to produce a master alloy by electrosolubility. The silver content is 80 to 99.8 atomic percent; the copper content is 01 to 10 atomic percent; the precious metal content is 0.1 to 10 atomic percent. According to the proportion of the alloy to be prepared and the weight of the ingot, calculate the amount to be added, mix the previously prepared master alloy with silver and prepare it in an empty melting furnace for melting, and wait for mixing After the material is completely melted, pour the metal melt # into the mold, and after it has cooled and solidified, remove the silver alloy prayer ingot from the mold. The obtained ingot is hot-machined according to the required target size to form the alloy The material ... Because the present invention does have an enhanced effect, the invention patent is applied in accordance with the law. [Simplified illustration of the drawing] Figure 1 is the splash of the conductive thin film electrode alloy target of the organic electro-excitation light display device of the present invention. Schematic diagram of the implementation. [Illustration of drawing number] 100 DC power supply 200 target material 250 ground shield (please read the precautions on the back before filling in the columns on this page) ---- This paper size applies to Chinese National Standard (CNS) A4 ^ (210X297 ^ 17 574383
450基座架 7〇〇氣體入口 A7 B7 300 面板基板 400 基座 500 電漿 600 眞空泵 800 測眞空儀表 900 節流閥 【較佳具體實施例之詳細説明】 本發明導電薄膜電極用之合金乾材銀含量約為8〇至 99.8原子百分比，較佳為銀含量9()至99.8原子百分比本 發明導電薄膜電極用之合錄材中並可以視需要地添加使 =貴重金屬可為！巴（Pd)、金（Au)、銘（pt)或其任何混 泛又形式。本發明導電薄膜電極用之合金靶材也可以視需 小、力土 V ^几腐姓性金屬以加強該革巴材於賤鍍於面板 基板後之抗腐⑽以及改善該導電薄膜電極合金於面板基 板上芡附著性；其中添加之抗腐蝕性金屬較佳可以為鈦， 鋁錄，鈷，鉻或其混合物。本發明合金靶材中包含之抗 2性金屬之含量無特殊之限制，較佳為抗腐触性金屬含 量J毛0 · 0 1至5原子百分比範圍。本發明導電薄膜電極用 之口至靶材可以適用於任何基板之濺鍍，較佳為適合於形 成平面顯示基板電極或導線之濺鍍之用。本發明導電薄膜 私極用之合金靶材之製造，係先將銀（Ag)，銅（Cu)以及 J種貝重金屬混合熔煉製成鑄錠以形成。其中該組合 物車乂佳可更包含至少一抗腐蝕性金屬，其中該抗腐蝕性金 屬為欽’铭’鎳’鈷或鉻。本發明合金I巴材之可為人合習 A4規格（210X297公釐） 請 先 閱 讀 背 面 意 事 項 再 塡 寫 本 頁 各 ;閑450 base frame 700 gas inlet A7 B7 300 panel substrate 400 base 500 plasma 600 air pump 800 air gauge 900 throttle valve [detailed description of preferred embodiments] alloy stem for conductive thin film electrodes of the present invention The silver content of the material is about 80 to 99.8 atomic percent, and preferably the silver content is 9 () to 99.8 atomic percent. The composite recording material for the conductive thin film electrode of the present invention can be added as needed so that precious metals can be used! Bar (Pd), Au (Au), Ming (pt) or any of its hybrids. The alloy target material for the conductive thin film electrode of the present invention can also be small and strong metal as needed to strengthen the corrosion resistance of the leather material after plating on the panel substrate and improve the conductive thin film electrode alloy. Adhesion on the panel substrate; the anti-corrosive metal added therein may preferably be titanium, aluminum, cobalt, chromium, or a mixture thereof. The content of the resistant metal contained in the alloy target of the present invention is not particularly limited, and it is preferably in the range of anticorrosive contact metal content from J. 0 to 0 1 to 5 atomic percent. The mouth-to-target material for the conductive thin film electrode of the present invention can be applied to sputtering of any substrate, and is preferably suitable for forming sputtering of electrodes or wires of a flat display substrate. The manufacturing of the alloy target for the conductive film of the present invention for private electrode is firstly made by mixing and melting silver (Ag), copper (Cu) and J kinds of shell metals to form an ingot. Wherein the composition Chejiajia may further include at least one anti-corrosive metal, wherein the anti-corrosive metal is Qin'ming'nickel'cobalt or chromium. The alloy I bar material of the present invention can be adapted to A4 specifications (210X297 mm) Please read the back of the item before copying each page; leisure
裝 I 574383 A7 _____________B7_ 五、發明説明（5 ) ' — 用之溶煉方法，較佳為大氣料法，眞找煉法或眞空精 煉法。 為月匕濃貝審查委員能更瞭解本發明之技術内容，特 舉導電薄膜電極用之合金㈣較佳具體實施例説明如下。 實施例1導電薄膜電極用之合金靶材之製作 將2250克重量之銀（Ag)，25〇克重量之銅（Cu)以及 1 〇 0 0克重里之鈀（p d)混合備料。之後，將該混合後之金 屬以電紙熔化產生母合金。添加465〇〇克重量之銀（Ag)與 先則所製成之母合金混合備料，置於眞空溶煉爐中於 1 100〜1 300度溫度下加熱3〜5小時進行熔煉，待混合料完 全溶化後，將金屬溶湯倒入模具中，待其冷卻固化後，自 模具中取出銀合金鑄鍵。所得之鑄錠依所需之革巴材尺寸， 以600〜800噸鍛造方式及8〇匹馬力以上熱滾壓方式，控 制其結晶方向為無優選方向，再經熱處理後控制其微觀組 織之結晶粒度約為20〜50微米，以形成該合金靶材。 實施例2導電薄膜電極用之合金靶材之製作 將1〇〇〇克重量之銀（Ag)，3 50克重量之銅， 600克重量之鈀（Pd)以及1〇克重量之鉻混合備料。之後， 將該混合後之金屬以電弧熔化產生母合金。添加47〇45克 重量之銀（Ag)與先前所製成之母合金混合備料，置於眞空 熔煉爐中於1100〜1 300度溫度下加熱3〜5小時進行熔煉: 待混合料完全熔化後，將金屬熔湯倒入模具中，待其冷卻 ____ 8 本紙張尺度適用中國國家標準（CNS) A4規格（2101Γ297公爱 1---— __ r ---------、可--------— (請先閲讀背面之注意事項再塡寫本頁各攔) 574383 A7 B7 五、發明説明（6 ) 固化後’自模具中取出銀合金鑄錠。所得之鑄錠依所需之 靶材尺寸，以6 0 0〜8 0 0噸鍛造方式及8 0匹馬力以上之熱 滾壓方式’控制其結晶方向為無優選方向，再經熱處理後 控制其微觀組織之結晶粒度約為2 0〜5 0微米，以形成該合 金靶材。 實施例3 將實施例1製造之靶材置入一濺鍍室◦該濺鍍室結構如第1 圖所示；包含一直流電源供應器1 〇 〇、一接地遮蔽物 250、一氣體入口 700、一眞空泵600，以及置放面板之 基座4 0 0。進行濺鍍時，將靶材2 〇 〇與電源1〇〇陰極相 連，並置入一平面顯示裝置之基板2〇〇於該濺鍍室，之後 通入流量20 seem之氬氣，以200 W之直流電功率，濺鍍 室維持5 mtori*眞空度下濺鍍十分鐘於該顯示面板基板 300上形成一厚度為21300 A之銀合金層，該銀合金層 經導電度測試，可得良好的導電性，其電阻抗為〇.〇279 ohm/If，經85 H/8 5°C高溫高濕實驗以膠帶進行剝離試驗 p e e 1 i n g t e s t，可得其良好的附著性之驗證。 實施例4 將實施例1製造之靶材置入一濺鍍室，並置入一平面顯示 裝置基板於該濺鍍室，之後於通入流量20 sccm之氬氣， 以1 0 0 W之直流電功率，錢鍵室維持5 m t 〇 r r眞空度下錢 鍍6.3分鐘於该顯示面板基板上形成一厚度為4〇〇〇A之銀 9 本紙張尺度適用中國國豪標準（CNS) A4規格（210X297公釐)~---- --------------0^---------、可--------— (請先閱讀背面之注意事項再填寫本頁各欄) 五、發明説明（7 ) 2層。該銀合金層經導電度測試，可得良好的導電性， 其廷阻抗為0.076 ohm/□加古 膠帶進行剝離靜h】· 问，皿问濕霄驗以 之驗说。八ΜΡ“1ΐη§ teSt)，可得其良好的附著性 功地ίΐ明首度製造適合_於基板之銀合金革巴材，以成 卜万、基板形成具8()%以上含量之銀合金沈積層，因 :::進-步配合銀合金之餘刻液以完成基板上銀合金之 芦=或辅助導電線圖樣之形成，以具體化銀合金導電模 二製：板4並可進—步完成具銀合金導電線之基板。本發 柄，錄材，可之適用於任何可誠薄層之基 顧：ΐ =導體基板，有機電激發光顯示裝置基板，液晶 ’一：1-土板’甚而任何平面顯示基板皆可適用。 海-甘陳’本發明無論就目的、手段及功效，在在均 ::二：異於習知技術之特徵，4「有機電激發光顯示裝 專膜，極用之合錄材」之—大突破，懇請早日賜 二一 1 ’俾昜惠社會，實感德便。惟應注意的是，上述諸 僅係、為了便㈣明而舉例而已，本發明所主張之 圍自應以申請專利範圍所述為準，而非僅限於上述Equipment I 574383 A7 _____________B7_ V. Description of the Invention (5) '— The melting method used is preferably the atmospheric method, the air-finding method or the air refining method. In order that the inspection committee members of the Moon Dagger can better understand the technical content of the present invention, the preferred embodiments of the alloy ㈣ for conductive thin film electrodes are described below. Example 1 Production of an alloy target material for a conductive thin film electrode 2250 g of silver (Ag), 250 g of copper (Cu), and 1,000 g of palladium (p d) were mixed and prepared. After that, the mixed metal is melted with electric paper to produce a master alloy. Add 465,000 grams of silver (Ag) and the master alloy prepared by the rule, and place it in a hollow melting furnace at 1 100 ~ 1 300 ° C for 3 ~ 5 hours for melting. After it is completely melted, pour the molten metal soup into the mold, and after it has cooled and solidified, remove the silver alloy cast key from the mold. The obtained ingot is controlled by a 600-800 ton forging method and a hot rolling method of 80 horsepower or more according to the required size of the leather material. The crystallization direction is controlled to be no preferred direction, and the microstructure of the crystal is controlled after heat treatment. The particle size is about 20-50 microns to form the alloy target. Example 2 Production of an alloy target for a conductive thin film electrode 1,000 g of silver (Ag), 350 g of copper, 600 g of palladium (Pd), and 10 g of chromium were mixed and prepared. . Thereafter, the mixed metal is arc-melted to produce a master alloy. Add 4704 grams of silver (Ag) and mix it with the previously prepared master alloy, place it in an air melting furnace and heat it at 1100 ~ 1 300 ° C for 3 ~ 5 hours for melting: after the mixture is completely melted , Pour the molten metal soup into the mold and wait for it to cool __ 8 This paper size applies to Chinese National Standard (CNS) A4 specifications (2101Γ297 Public Love 1 ------- __ r ---------, may --------— (Please read the precautions on the reverse side before transcribing each page of this page) 574383 A7 B7 V. Description of the invention (6) After curing, 'take out the silver alloy ingot from the mold. The resulting cast According to the required target size, the ingot is controlled by a forging method of 600 ~ 800 tons and a hot rolling method of more than 80 horsepower to control its crystallization direction to have no preferred direction. After the heat treatment, the microstructure of the ingot is controlled. The crystal grain size is about 20 to 50 microns to form the alloy target. Example 3 The target manufactured in Example 1 is placed in a sputtering chamber. The structure of the sputtering chamber is shown in Figure 1; Power supply 100, a ground shield 250, a gas inlet 700, an air pump 600, and a base for placing the panel Block 400. When sputtering is performed, target 2000 is connected to a cathode of power source 100, and a substrate 200 of a flat display device is placed in the sputtering chamber, and then argon with a flow of 20 seem is passed through. Gas, with a DC power of 200 W, the sputtering chamber is maintained at 5 mtori * for 10 minutes, and a silver alloy layer with a thickness of 21300 A is formed on the display panel substrate 300. The silver alloy layer has been tested for electrical conductivity. Good electrical conductivity can be obtained, and its electrical impedance is 0.0279 ohm / If. After peeling test pee 1 ingtest with adhesive tape after 85 H / 8 5 ° C high temperature and high humidity test, it can be verified for good adhesion. Example 4 The target produced in Example 1 was placed in a sputtering chamber, and a flat display device substrate was placed in the sputtering chamber. Then, an argon gas with a flow rate of 20 sccm was passed in, and a direct current of 100 W was applied. Power, the money key room is maintained at 5 mt 〇rr, and the money is plated for 6.3 minutes on the display panel substrate to form a silver with a thickness of 4000 A. This paper size applies to China National Standard (CNS) A4 (210X297) (Mm) ~ ---- -------------- 0 ^ --------- 、 may ---------- (Please read first Note on the back, please fill in the columns on this page again.) 5. Description of the invention (7) 2. The silver alloy layer has good conductivity after being tested for electrical conductivity. Its resistance is 0.076 ohm / □ Jiaguo tape. h] · Ask, Dish asks the dampness to test it. Eight MP “1ΐη§ teSt), can get its good adhesion, and for the first time to manufacture silver alloy leather materials suitable for substrates. Bu Wan, the substrate forms a silver alloy deposition layer with a content of more than 8 ()%, because :::-further cooperate with the remaining solution of the silver alloy to complete the silver alloy on the substrate = or to form the conductive wire pattern, to The second embodiment of the silver alloy conductive mold: the plate 4 can be further advanced to complete the substrate with the silver alloy conductive wire. This hair handle and recording material can be applied to any basic thin substrate: ΐ = conductor substrate, organic electroluminescent display device substrate, liquid crystal 'one: 1-soil plate', even any flat display substrate can be used . Hai-Gan-Chen 'The present invention, regardless of its purpose, means, and efficacy, is: 2: Second, different from the characteristics of the conventional technology, 4 "Organic electro-excitation light display equipment special film, a very useful combination of recording materials"- Great breakthrough, I implore you to give 211 as soon as possible. It should be noted that the above are only examples for the sake of clarity. The claims of the present invention should be based on the scope of the patent application, not just the above.