TW574383B - Alloy target for conductive film - Google Patents

Alloy target for conductive film Download PDF

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Publication number
TW574383B
TW574383B TW91117110A TW91117110A TW574383B TW 574383 B TW574383 B TW 574383B TW 91117110 A TW91117110 A TW 91117110A TW 91117110 A TW91117110 A TW 91117110A TW 574383 B TW574383 B TW 574383B
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TW
Taiwan
Prior art keywords
metal
alloy
application
item
content
Prior art date
Application number
TW91117110A
Other languages
Chinese (zh)
Inventor
Yi Jang
Chin-Shiau Jau
Tian-Wang Huang
Hung-Hua Chen
Original Assignee
Ritdisplay Corp
Solar Applied Materials Techno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ritdisplay Corp, Solar Applied Materials Techno filed Critical Ritdisplay Corp
Priority to TW91117110A priority Critical patent/TW574383B/en
Application granted granted Critical
Publication of TW574383B publication Critical patent/TW574383B/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver

Description

574383 V. Description of the invention (1) [Field of the invention] The present invention relates to a dry alloy material of an organic electroluminescent display device, especially a semiconductor substrate or organic electricity: a display substrate for a gross light display device The thin-film electrode of the wire or the electrode is inserted into the mouth of A-Shishi to [Background of the present invention] The flat-panel display (such as 0LED, etc.) has gradually replaced the cathode-ray tube display as the point of display due to its lightness, shortness, and shortness. The composition and structure of flat-panel displays (such as 0LEDs), or their display images, "Although there are differences in technical means, conductive structures (such as indium tin oxide ⑽ Tin 〇 仙; ΙΤ〇) or inscriptions are used in various flat-display structures. Zinc oxide (AluminumZineOxide; = 0) is used as the anode on the substrate, and the cathode of the low work function metal or alloy is used as the control structure of the light emitting pixel. For π-viewing semiconductor or organic electroluminescent display devices, metal complexes are often used as the material of the wires. Although the road metal itself has certain electrical characteristics, good corrosion resistance, and low material costs, but when the metal is used as a conductive film electrode, the resistance of the road itself is higher than that of copper. Therefore, it is difficult to achieve low-voltage driving of the light-emitting layer to display the image. Therefore, the best control of the image rendering cannot be achieved. At the same time, its resistance is slightly higher, which will cause power consumption due to heating. Increasing the use efficiency of 4, 1 source, and during operation, it will make the flat display temperature, and will affect the hair between the conductive film anode and the low-power function cathode. This paper size is applicable to Chinese National Standards (CNS). _ 574383 V. Description of the invention (2) Image display of light layer. Therefore, researchers have been deaf, and have been seeking to use a lower resistance metal as the material of the chip or the display device wire to push you, A θ Τ. Any proposal has been made to use silver as the chip or display device wire Materials, but because the target or etching solution composition is properly defined, it has not been widely used. ~ For silver alloys with a silver content of more than 80%, although ^ 金属 is not as low as that of silver metal, its resistance is much lower than that of road metal, and it is still a suitable wafer or display device wire material. However, due to the lack of silver alloy It has the appropriate leather material or etching solution, so it is not widely used in the yellow light process of wafers or panels. Because of this, the inventor originally developed the essence of the positive invention #, although thinking about a kind of solution that can solve the problem 纟 “alloy leather material for conductive thin-film electrodes”, after several research experiments, this invention that benefited the world was completed. [Summary of the present invention] The main object of the present invention is to provide an alloy leather material for conductive thin-film electrodes of organic electroluminescent display devices, which can form low resistance and conductivity on the panel or substrate when the money is cheap. Good and high adhesion conductive thin film electrode or auxiliary electrode. 2. Another object of the present invention is to provide a method for manufacturing an alloy dry material for a conductive thin film electrode of an organic electroluminescent display device, which can form an alloy target to form a resistance on a panel or substrate during sputtering. Conductive thin film electrode alloy with low, good conductivity and high adhesion. In order to achieve the above object, the alloy leather material for the conductive thin film electrode of the organic electroluminescent display device of the present invention includes silver (Ag), copper (Cu), and at least one precious metal selected from the group consisting of palladium (pd), gold, and platinum. Composition -------------- β equipment --------- ^ -------- (Please read the precautions on the back before filling in the columns on this page)

574383

V. Description of the invention (3) ^ group; wherein the silver content is 80 to 99.8 atomic percent; the copper content is .1 to 10 atomic percent; the precious metal content is 0.01 to 10 atomic hundred sword ratio, and the alloy The total atomic percentage of the alloy in dry material is rhenium. The alloy leather material for conductive thin-film electrodes of the organic electroluminescent display device of the present invention < Manufacturing method 'includes the following steps: silver (Ag), copper (CM, and at least one kind of precious metal, mixed in an appropriate ratio) Prepare the material and place it in the air at about 10-1 ~ 10-3torr to produce a master alloy by electrosolubility. The silver content is 80 to 99.8 atomic percent; the copper content is 01 to 10 atomic percent; the precious metal content is 0.1 to 10 atomic percent. According to the proportion of the alloy to be prepared and the weight of the ingot, calculate the amount to be added, mix the previously prepared master alloy with silver and prepare it in an empty melting furnace for melting, and wait for mixing After the material is completely melted, pour the metal melt # into the mold, and after it has cooled and solidified, remove the silver alloy prayer ingot from the mold. The obtained ingot is hot-machined according to the required target size to form the alloy The material ... Because the present invention does have an enhanced effect, the invention patent is applied in accordance with the law. [Simplified illustration of the drawing] Figure 1 is the splash of the conductive thin film electrode alloy target of the organic electro-excitation light display device of the present invention. Schematic diagram of the implementation. [Illustration of drawing number] 100 DC power supply 200 target material 250 ground shield (please read the precautions on the back before filling in the columns on this page) ---- This paper size applies to Chinese National Standard (CNS) A4 ^ (210X297 ^ 17 574383

450 base frame 700 gas inlet A7 B7 300 panel substrate 400 base 500 plasma 600 air pump 800 air gauge 900 throttle valve [detailed description of preferred embodiments] alloy stem for conductive thin film electrodes of the present invention The silver content of the material is about 80 to 99.8 atomic percent, and preferably the silver content is 9 () to 99.8 atomic percent. The composite recording material for the conductive thin film electrode of the present invention can be added as needed so that precious metals can be used! Bar (Pd), Au (Au), Ming (pt) or any of its hybrids. The alloy target material for the conductive thin film electrode of the present invention can also be small and strong metal as needed to strengthen the corrosion resistance of the leather material after plating on the panel substrate and improve the conductive thin film electrode alloy. Adhesion on the panel substrate; the anti-corrosive metal added therein may preferably be titanium, aluminum, cobalt, chromium, or a mixture thereof. The content of the resistant metal contained in the alloy target of the present invention is not particularly limited, and it is preferably in the range of anticorrosive contact metal content from J. 0 to 0 1 to 5 atomic percent. The mouth-to-target material for the conductive thin film electrode of the present invention can be applied to sputtering of any substrate, and is preferably suitable for forming sputtering of electrodes or wires of a flat display substrate. The manufacturing of the alloy target for the conductive film of the present invention for private electrode is firstly made by mixing and melting silver (Ag), copper (Cu) and J kinds of shell metals to form an ingot. Wherein the composition Chejiajia may further include at least one anti-corrosive metal, wherein the anti-corrosive metal is Qin'ming'nickel'cobalt or chromium. The alloy I bar material of the present invention can be adapted to A4 specifications (210X297 mm) Please read the back of the item before copying each page; leisure

Equipment I 574383 A7 _____________B7_ V. Description of the Invention (5) '— The melting method used is preferably the atmospheric method, the air-finding method or the air refining method. In order that the inspection committee members of the Moon Dagger can better understand the technical content of the present invention, the preferred embodiments of the alloy ㈣ for conductive thin film electrodes are described below. Example 1 Production of an alloy target material for a conductive thin film electrode 2250 g of silver (Ag), 250 g of copper (Cu), and 1,000 g of palladium (p d) were mixed and prepared. After that, the mixed metal is melted with electric paper to produce a master alloy. Add 465,000 grams of silver (Ag) and the master alloy prepared by the rule, and place it in a hollow melting furnace at 1 100 ~ 1 300 ° C for 3 ~ 5 hours for melting. After it is completely melted, pour the molten metal soup into the mold, and after it has cooled and solidified, remove the silver alloy cast key from the mold. The obtained ingot is controlled by a 600-800 ton forging method and a hot rolling method of 80 horsepower or more according to the required size of the leather material. The crystallization direction is controlled to be no preferred direction, and the microstructure of the crystal is controlled after heat treatment. The particle size is about 20-50 microns to form the alloy target. Example 2 Production of an alloy target for a conductive thin film electrode 1,000 g of silver (Ag), 350 g of copper, 600 g of palladium (Pd), and 10 g of chromium were mixed and prepared. . Thereafter, the mixed metal is arc-melted to produce a master alloy. Add 4704 grams of silver (Ag) and mix it with the previously prepared master alloy, place it in an air melting furnace and heat it at 1100 ~ 1 300 ° C for 3 ~ 5 hours for melting: after the mixture is completely melted , Pour the molten metal soup into the mold and wait for it to cool __ 8 This paper size applies to Chinese National Standard (CNS) A4 specifications (2101Γ297 Public Love 1 ------- __ r ---------, may --------— (Please read the precautions on the reverse side before transcribing each page of this page) 574383 A7 B7 V. Description of the invention (6) After curing, 'take out the silver alloy ingot from the mold. The resulting cast According to the required target size, the ingot is controlled by a forging method of 600 ~ 800 tons and a hot rolling method of more than 80 horsepower to control its crystallization direction to have no preferred direction. After the heat treatment, the microstructure of the ingot is controlled. The crystal grain size is about 20 to 50 microns to form the alloy target. Example 3 The target manufactured in Example 1 is placed in a sputtering chamber. The structure of the sputtering chamber is shown in Figure 1; Power supply 100, a ground shield 250, a gas inlet 700, an air pump 600, and a base for placing the panel Block 400. When sputtering is performed, target 2000 is connected to a cathode of power source 100, and a substrate 200 of a flat display device is placed in the sputtering chamber, and then argon with a flow of 20 seem is passed through. Gas, with a DC power of 200 W, the sputtering chamber is maintained at 5 mtori * for 10 minutes, and a silver alloy layer with a thickness of 21300 A is formed on the display panel substrate 300. The silver alloy layer has been tested for electrical conductivity. Good electrical conductivity can be obtained, and its electrical impedance is 0.0279 ohm / If. After peeling test pee 1 ingtest with adhesive tape after 85 H / 8 5 ° C high temperature and high humidity test, it can be verified for good adhesion. Example 4 The target produced in Example 1 was placed in a sputtering chamber, and a flat display device substrate was placed in the sputtering chamber. Then, an argon gas with a flow rate of 20 sccm was passed in, and a direct current of 100 W was applied. Power, the money key room is maintained at 5 mt 〇rr, and the money is plated for 6.3 minutes on the display panel substrate to form a silver with a thickness of 4000 A. This paper size applies to China National Standard (CNS) A4 (210X297) (Mm) ~ ---- -------------- 0 ^ --------- 、 may ---------- (Please read first Note on the back, please fill in the columns on this page again.) 5. Description of the invention (7) 2. The silver alloy layer has good conductivity after being tested for electrical conductivity. Its resistance is 0.076 ohm / □ Jiaguo tape. h] · Ask, Dish asks the dampness to test it. Eight MP “1ΐη§ teSt), can get its good adhesion, and for the first time to manufacture silver alloy leather materials suitable for substrates. Bu Wan, the substrate forms a silver alloy deposition layer with a content of more than 8 ()%, because :::-further cooperate with the remaining solution of the silver alloy to complete the silver alloy on the substrate = or to form the conductive wire pattern, to The second embodiment of the silver alloy conductive mold: the plate 4 can be further advanced to complete the substrate with the silver alloy conductive wire. This hair handle and recording material can be applied to any basic thin substrate: ΐ = conductor substrate, organic electroluminescent display device substrate, liquid crystal 'one: 1-soil plate', even any flat display substrate can be used . Hai-Gan-Chen 'The present invention, regardless of its purpose, means, and efficacy, is: 2: Second, different from the characteristics of the conventional technology, 4 "Organic electro-excitation light display equipment special film, a very useful combination of recording materials"- Great breakthrough, I implore you to give 211 as soon as possible. It should be noted that the above are only examples for the sake of clarity. The claims of the present invention should be based on the scope of the patent application, not just the above.

Claims (1)

  1. ι · —An alloy bar for a conductive thin film electrode of an organic electroluminescent display device includes silver (Ag), copper (Cu), and at least one kind of sound heavy metal selected from palladium (Pd), gold (Au), and platinum (Pt ) Group; eight of which the silver content is 80 to 99.8 atomic percent; the steel content is 0.1 to 10 atomic percent; the precious metal content is (^ 丨 to "atomic percentage; and the total atom of the alloy of the dry alloy salty material The percentage is the above 2 • The heavy metal of alloy leather as described in item 丨 of the patent application scope is exempt (Pd). 3. The heavy metal of alloy target as described in the application item scope of patent application is gold (Au). 4 • The heavy metal of the alloy target as described in item 丨 of the patent application is pin (Pt). 5 • The alloy target as described in item 丨 of the patent application ^ ^ • Corrosive metal, in which the corrosion-resistant metal It is titanium, aluminum, nickel, cobalt, or chromium. 6. The alloy target material as described in item 丨 of the application, wherein the corrosion-resistant metal is titanium; and its titanium content is 0.001 to 5 atomic percent. 7 · The alloy target as described in item 1 of the scope of patent application, the corrosion resistance The metal is nickel; and its nickel content is from 0.01 to 5 atomic percent. 8 The alloy target as described in item 1 of the patent application scope, wherein the corrosion-resistant metal is aluminum; and its aluminum content is 〇 · 〇 1 to 5 atomic percent. 9 · The alloy target according to item 1 of the patent application park, wherein the corrosion-resistant metal is cobalt; and the cobalt content thereof is 0.0 1 to 5 atomic percent. 100 of which is expensive Guiqiu Qiqiqi also includes 11 paper size Shicai ® 〇x 297 ay 574383 A8 B8 C8 --------------- D8 VI. Application scope 1 '---- 10 · As the alloy target described in item 丨 of the patent application scope, the anticorrosive metal is chromium; and its chromium content is 001 to 5 atomic percent. 11. · The alloy target described in item 丨 of the patent application scope Material, which is used to form the electrode or wire of a flat display substrate. 12. A method for manufacturing an alloy target for a conductive thin film electrode of an organic electroluminescent display device includes the following steps: (A) Powder compositions of silver (Ag), copper (Cu) and at least one precious metal are all ground and ground After melting, the parent alloy is produced by arc melting, wherein the silver content is 80 to 99.8 atomic percent; the copper content is 〇 丨 to 丨 0 atomic percent; the precious metal content is 0.1 to 10 atomic percent; and the precious metal is at least A metal selected from the group consisting of palladium (pd), gold (Au), and platinum (Pt); (B) silver is mixed with a previously made master alloy, placed in a crucible, and subjected to hollow melting to make An ingot; and (C) the ingot; hot machining such as forging, hot rolling, and heat treatment to form the alloy target. . 13. The manufacturing method as described in item 11 of the scope of patent application, wherein the metal master alloy in step (A) further comprises at least one anti-corrosive metal powder 'wherein the anti-corrosive metal is rhenium, Shao, nickel, Drill or network. 14. The manufacturing method as described in item 13 of the scope of the patent application, wherein the corrosion resistant metal of step (A) is '; and the titanium content of the metal master alloy is 0.01 to 5 atomic percent. 12 This paper size is in accordance with China National Standard (CNS) A4 specifications ^ (Please read the precautions on the back before filling in the blocks on this page) Loading---- ·-^^ 1 I ^ V · I--^^ 1 , Yikou mouth, line! 8 8 8 8 A Be D 574383 6. Application scope of patent 15. The manufacturing method as described in item 12 of the scope of patent application, wherein the corrosion-resistant metal of step (A) is nickel; and the metal master alloy is Its nickel content is 0 · 0 1 to 5 atomic percent. 16. The manufacturing method according to item 12 of the scope of the patent application, wherein the corrosion-resistant metal of step (A) is aluminum; and the aluminum content of the metal master alloy is 0.01 to 5 atomic percent. 17. The manufacturing method as described in item 12 of the scope of the patent application, wherein the corrosion resistant metal of step (A) is cobalt; and the cobalt content of the metal master alloy is 0.01 to 5 atomic percent. 18. The manufacturing method as described in item 12 of the scope of patent application, wherein the corrosion-resistant metal of step (A) is chromium; and its chromium content is from 0. 0 1 to 5 atomic percent. (Please read the precautions on the back before filling in the blocks on this page) Binding ----, line! 13 This paper size applies to China National Standard (CNS) A4 (210X297 mm)
TW91117110A 2002-07-31 2002-07-31 Alloy target for conductive film TW574383B (en)

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TW91117110A TW574383B (en) 2002-07-31 2002-07-31 Alloy target for conductive film
US10/630,742 US20040057864A1 (en) 2002-07-31 2003-07-31 Alloy target used for producing flat panel displays

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106560457A (en) * 2016-10-24 2017-04-12 浙江大明玻璃有限公司 APC metal electric conduction film wiring production process

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW588559B (en) * 2002-10-25 2004-05-21 Ritdisplay Corp Organic light emitting panel with alloy
US20090191424A1 (en) * 2008-01-28 2009-07-30 Lee Jun-Der Manufacturing method for a composite metal wire used as a packaging wire and products thereof
US20090297391A1 (en) * 2008-05-28 2009-12-03 Lee Jun-Der Manufacturing method for a silver alloy bonding wire and products thereof
US8101123B2 (en) * 2009-03-23 2012-01-24 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4247863B2 (en) * 1999-07-12 2009-04-02 ソニー株式会社 Metal materials for electronic components, wiring materials for electronic components, electrode materials for electronic components, electronic components, electronic equipment, processing methods for metal materials, and electro-optical components

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106560457A (en) * 2016-10-24 2017-04-12 浙江大明玻璃有限公司 APC metal electric conduction film wiring production process

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