TWI254747B - Alloy target for conductive film or its protection layer and manufacturing method thereof - Google Patents

Alloy target for conductive film or its protection layer and manufacturing method thereof Download PDF

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Publication number
TWI254747B
TWI254747B TW094106124A TW94106124A TWI254747B TW I254747 B TWI254747 B TW I254747B TW 094106124 A TW094106124 A TW 094106124A TW 94106124 A TW94106124 A TW 94106124A TW I254747 B TWI254747 B TW I254747B
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Taiwan
Prior art keywords
conductive film
weight
alloy
content
protective layer
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TW094106124A
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Chinese (zh)
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TW200632115A (en
Inventor
Yih Chang
Chih-Hsiao Chao
Tien-Wang Huang
Hung-Hua Chen
Jiin-Chyuan Chang
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Ritdisplay Corp
Solar Applied Materials Techno
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Priority to TW094106124A priority Critical patent/TWI254747B/en
Priority to JP2005331888A priority patent/JP4815194B2/en
Priority to KR1020060014271A priority patent/KR100726872B1/en
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Publication of TW200632115A publication Critical patent/TW200632115A/en

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    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G23/00—Other table equipment
    • A47G23/06—Serving trays
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G23/00—Other table equipment
    • A47G23/06—Serving trays
    • A47G2023/0666—Serving trays using magnets

Abstract

An alloy target for conductive film or its protection layer comprises copper (Cu), nickel (Ni) and zinc (Zn), wherein copper is about 50 to 80 weight percentages, nickel is about 5 to 20 weight percentages and zinc is about 15 to 30 weight percentages and the total weight percentages of the alloy target is 100%.

Description

1254747 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種導電薄膜或其保護層用之合金靶 材及其製造方法’尤指—種適用於半導體基板或平面顯示 基板之導電薄膜導線、電極或輔助電極在製程中，需藉助 保護層增強其抗氧化性及附著力，以提昇產品良率騎靠 【先前技術】 10 15 20 平面顯示器（例如液晶顯示器（Liquid Crystai Dispiay， LCD)、有機電激發光顯示器（OKW EleCtroluminesc⑽ Duplay，〇ELD)等）由於具有輕薄短小之特性，因此漸漸 取代陰極射線管顯示器成為顯示器之焦點。而各式之平面 顯示器（如LCD、〇助等）之組成構造或其顯示影像之技 術手&雖各有差異’但各式平面顯示器結構中多利用且導 ，質（例如銦錫氧化物(1丁〇)_氧化物(az〇);、於 二=作為陽極，再配合低功函數金屬或合金之陰極作為 ^光像素之控制結構。 ^以銀或銀合金作為半導體基板或平面顯示基板 ==電極的材料雖具有良好之導電性，然而由於其抗 附著力不佳’易導致製程良率偏低。因此尋求抗 乳化性佳、附著力強之金屬或合 至薄胰應用於半導體基板 衫面顯不基板作為導線或電極之保護層，乃為重要課題。 5 1254747 恭*爰因於此，本發明亟思一種可以解決上述問題之「導 ::膜或其保護層用之合金靶材及其製造方法」，幾經研 九汽驗終至完成此項嘉惠世人之發明。 【發明内容】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an alloy thin film for an electroconductive film or a protective layer thereof, and a method for producing the same, and particularly to a conductive film wire suitable for a semiconductor substrate or a flat display substrate. In the process, the electrode or auxiliary electrode needs to be protected by the protective layer to enhance its oxidation resistance and adhesion, so as to improve the product yield. [Prior Art] 10 15 20 flat panel display (such as liquid crystal display (Liquid Crystai Dispiay, LCD), Organic electroluminescent display (OKW EleCtroluminesc (10) Duplay, 〇ELD), etc.) has gradually replaced the cathode ray tube display as the focus of the display due to its lightness and shortness. The various types of flat-panel displays (such as LCDs, LCDs, etc.) are constructed or their technical displays are different. However, various flat-panel display structures are used and guided, such as indium tin oxide. (1 〇 〇) _ oxide (az 〇);, 二 = = as the anode, and then with the low work function metal or alloy cathode as the control structure of the ^ pixel. ^ Silver or silver alloy as a semiconductor substrate or flat display Substrate==The material of the electrode has good conductivity, but because of its poor adhesion resistance, it is easy to lead to low process yield. Therefore, it is necessary to find a metal with good anti-emulsification property and strong adhesion to thin pancreas for semiconductor. It is an important issue to display the substrate as a protective layer for wires or electrodes. 5 1254747 Christine* Because of this, the present invention is a kind of alloy that can solve the above problems: film or its protective layer. Target and its manufacturing method", after several research and development of Jiuqi to complete the invention of the Jiahui people. [Summary]

10 八本發明之一目的係提供一種導電薄膜保護層用之合 :革巴材及其製造方法’俾能於導線、電極或輔助電極上提 供抗氧化性佳及高附著性之保護層，避免導線、電極或輔 助電極於後續製程中，例如在氧氣電漿（02 pl_)清洗或 蝕刻階段受到損壞，以提高產品良率和可靠度。 本發明之再一目的係提供一種導電薄膜用之合金靶 材及其製造方法，俾能用於形成導線、電極或辅助電極， 以提供抗氧化性佳、電阻值低、導電性佳及高附著性，避 免導線、電極或輔助電極於後續製程中，例如在氧氣電漿 15清洗或蝕刻階段受到損壞，以提高產品良率和可靠度。為 達成上述之目的，本發明一種導電薄膜保護層用之$金靶 材至少包含銅（Cu)、鎳（Ni)以及鋅（Zn);其中銅含量為5〇 至80重量百分比；鎳含量為5至2〇重量百分比；鋅含量為。 至30重置百分比，且合金靶材之總重量百分比為 為達成上述之目的，本發明一種導電薄膜用之合金靶 材至y包含銅、鎳以及鋅；其中銅含量為5〇至8〇重量百分 比；鎳含量為5至20重量百分比；鋅含量為15至3〇重量百分 比’且合金乾材之總重量百分比為1 〇〇〇/〇。 6 1254747 銅最佳含量為60至70重量百分比，鎳最佳含量為至 15重量百分比，鋅最佳含量為20至25重量百分比。 本發明一種導電薄膜或其保護層用之合金靶材更可 包含貴金屬及/或耐蝕性金屬；貴金屬係選自鉑（pt)、金（八 及把（Pd)至少其中之一，其含量為01至5 〇重量百分比，二 佳含量為0.5至1.0重量百分比；耐蝕性金屬係選自鈦、銘取 録、鉻及其混合物至少其中之一，其含量為〇〇1至1〇重量 百分比’最佳含量為〇·〇5至〇·2重量百分比。 ίο 15 20 為達成上述之目的，本發明一種導電薄膜或其保護層 用之合金ΙΜ才之製造方法包含下列步驟：（A) t將銅、錄 以及鋅依適當比例混合備料，進㈣煉，製成鱗錠；其中 銅含量為50至80重量百分比，鎳含量為5至2〇重量百分比’ 鋅含量為15至3G重量百分比，且合金㈣之總重量百分比 為 100% 〇 、熔煉方法可為大氣料法、真空熔煉法或真空精煉 法，其中真空熔煉之真空度約為〜⑺、0^。 步驟⑻再將鑄錠進行例如鍛造、熱滾壓或熱處理等 熱機加工，以形成合金靶材。 本毛明種導電薄膜或其保護層用之合金乾材之製 造方法更可於步驟(A)加入貴金屬及/或耐蝕性金屬，·貴金 ^系選自#、金聽至少其中之-，其含量為（MM.O重 置百分比，最佳含量為〇.5至1()重量百分比；耐㈣金屬 係選自鈦、紹、姑、鉻及其混合物至少其中之一，其含量 7 1254747 為0·01至1·〇重I石 比。 刀比’最佳含量為0_05至0_2重量百分 本土明應用鋼錄飾合金製作合金 護層具有抗氧化杻杜β A /、所形成之保 線、電極或附著性之特點；其所形成之導 佳及高附著性之特:/、=氧ΓΓ電阻值低、導電性 半導體或平面_亍4 5合金之#刻液，於 護層。 …、-之面板或基板上形成導電圖樣或其保 1G【實施方式】 本發明-種導電薄膜保護層用之合金乾材，至少包含 5鎳以及鋅，其中銅含量為50至80重量百分比，鋅人旦 為5至20重量百八士处入 曰刀比鎳3里 百刀比，鋅含量為15至3〇重量百分比，且合金 15 才:〜重里百分比為刚％ ;本發明—種導電薄膜保護層 /之5金乾材更可包含貴金屬及/或耐錄金屬，責金屬 • 係選自翻、冬好 、、’ 及鈀至少其中之一，其含量為0.1至50 八量百分比，最佳含量為〇·5至1〇重量百分比；耐蝕性 屬可加強合金#材濺鑛於面板或基板後之耐钱性，以及 20 2善導電賴於面板或基板上之附著性，其中耐餘性金屬 父佳者係選自鈦、链、钻、鉻及其混合物至少其中之一， “車乂 里介於〇·01至丨·0重量百分比，最佳含量為0.05至 〇。·2重1百分比。本發明導電薄膜或其保護層用之合金靶材 可適用於任何基板之濺鍍製程，較佳者為適用於半導體或 8 1254747 5 10 15 面顯㈣之面板或基板上形成導線、電極或輔助電極或 =保護層。本發明導電薄膜或其保護層用之合金靶材之紫 造方法，係先將銅、鎳以及鋅依適當比例混合傷料後，進 仃熔煉’製成鑄錠，再經熱機加工，以形成合金靶材。 審查委員能更瞭解本發明之技術内容，特 ^電薄膜或其保護層用之合錄材及其 體實施例說明如下： 无知仏具 實施例1 |電薄膜或其保護層用之合金革巴材之製造方法 將45公斤重量之銅、u.25公斤重量之錄、_公斤 二鋅以及75。克重量之翻混合傷料，置於真空度為 士…torr之真空炫煉爐中於u〇〇〜i3〇〇〇c下加熱w小 :進仃炫煉待混合料完全溶化後，將金屬炼湯倒入模具 鍵贫=冷卻固化後，自模具中取出合金鑄鍵。所得之鑄 叙依所需之乾材尺寸，以鍛造 =上熱滾壓方式，控制其結晶方向為無優選方向，再= 处理後控制其微觀組織之結晶粒度 ’、、、 成合金靶材。 3 5〇倣未’以形 實施例2 層 合金革巴材義於平面顯示器形成導電薄膜保護 20 1254747 將實施例1製造之合金靶材置入一濺鍍室，並置入一 平面顯示器之基板於濺鍍室，基板上已預先形成導線圖 樣，之後通入流量2〇 sccm之氩氣，以2〇〇 w之直流電功率， 濺鍍室維持5 mtorr真空度下濺鍍15分鐘於導線圖樣上形 成一厚度為GOO A之保護層’保護層經氧氣電漿測試，可 得好的抗氧化性，再經85t/RH85%高溫高濕實驗後， 以膠▼進仃剝離試驗（peeling卜叫，可得到良好的附著性 之驗證。 10 15 貝施例3合金乾材藏鐘於平面顯示器形成導電薄膜 將實施m製造之合絲材置入一滅鐘室，並置入一 :面顯示器之基板於錢室，之後通入流量2〇 sccm之氬 孔’以100 w之直流電功率’機艘室維持5加⑽直空产下 韻1分鐘於基板上形成—厚度為11叫之導線圖樣^線 圖樣經Λ氣電聚測試，可得到良好的抗氧化性，再經机 /RH85%向溫高濕實驗後， 好的附著性之驗證。 仃―从’可得到良 護層金製作合錄材，其所形成之保 線、電極^ 佳及〶附著性之特點；其所形成之導 半導體或平面顯示 口現有銅合金之钮刻液，於 護層。'ί 反或基板上形成導電圖樣或其保 20 1254747 上述實施例僅係為了方便說明而舉例而已，本發明所 主張之權利範圍自應以申請專利範圍所述為準，而非僅限 於上述實施例。 · 5【圖式簡單說明】 益 tOne of the eight objects of the present invention is to provide a protective film for a conductive film: a leather material and a method for producing the same, which can provide a protective layer with high oxidation resistance and high adhesion on a wire, an electrode or an auxiliary electrode, and avoid The wire, electrode or auxiliary electrode is damaged in subsequent processes, such as in the oxygen plasma (02 pl_) cleaning or etching stage, to improve product yield and reliability. Still another object of the present invention is to provide an alloy target for an electroconductive film and a method for producing the same, which can be used for forming a wire, an electrode or an auxiliary electrode to provide good oxidation resistance, low resistance value, good electrical conductivity and high adhesion. To avoid damage to the wire, electrode or auxiliary electrode during subsequent processes, such as cleaning or etching of the oxygen plasma 15 to improve product yield and reliability. In order to achieve the above object, the gold target for the conductive film protective layer of the present invention comprises at least copper (Cu), nickel (Ni) and zinc (Zn); wherein the copper content is 5 〇 to 80% by weight; the nickel content is 5 to 2% by weight; zinc content is. To the 30% reset percentage, and the total weight percentage of the alloy target is to achieve the above purpose, the alloy target for the conductive film of the present invention to y comprises copper, nickel and zinc; wherein the copper content is 5 〇 to 8 〇 Percentage; nickel content is 5 to 20 weight percent; zinc content is 15 to 3 weight percent 'and the total weight percentage of the alloy dry material is 1 〇〇〇 / 〇. 6 1254747 The optimum copper content is 60 to 70 weight percent, the optimum nickel content is 15 weight percent, and the optimum zinc content is 20 to 25 weight percent. The alloy target for an electroconductive film or a protective layer thereof may further comprise a noble metal and/or a corrosion-resistant metal; the noble metal is selected from at least one of platinum (pt) and gold (eight and pd), and the content thereof is 01 to 5 〇 by weight, the second content is 0.5 to 1.0% by weight; the corrosion resistant metal is selected from at least one of titanium, etched, chrome and mixtures thereof, and the content is 〇〇1 to 1 〇 by weight' The optimum content is 〇·〇5 to 〇·2 by weight. ίο 15 20 To achieve the above object, the method for producing an electroconductive film or a protective layer thereof according to the present invention comprises the following steps: (A) t Copper, recorded and zinc are mixed in a proper ratio, and refined into a scale; the copper content is 50 to 80% by weight, the nickel content is 5 to 2% by weight, and the zinc content is 15 to 3G by weight, and The total weight percentage of the alloy (4) is 100% 〇, and the melting method may be an atmospheric material method, a vacuum melting method or a vacuum refining method, wherein the vacuum degree of the vacuum melting is about ~(7), 0^. Step (8) and then forging the ingot, for example, forging ,heat Thermal processing such as rolling or heat treatment to form an alloy target. The manufacturing method of the alloy dry material for the conductive film of the present invention or its protective layer can be added to the precious metal and/or the corrosion-resistant metal in the step (A). The gold system is selected from #, 金听, at least - and its content is (MM.O replacement percentage, the optimum content is 〇.5 to 1 () weight percentage; resistant (four) metal is selected from titanium, Shao, aunt At least one of chrome and its mixture, its content 7 1254747 is 0·01 to 1·〇 weight I stone ratio. Knife ratio 'optimum content is 0_05 to 0_2 weight percent local application steel alloy alloy alloy alloy protection The layer has the characteristics of anti-oxidation 杻Du β A /, the formed wire, electrode or adhesion; the formation of the good and high adhesion: /, = low oxygen resistance, conductive semiconductor or plane _亍4 5 alloy# 刻液, forming a conductive pattern on a panel or a substrate of a protective layer or a substrate thereof. [Invention] The present invention relates to an alloy dry material for a conductive film protective layer, comprising at least 5 nickel And zinc, wherein the copper content is 50 to 80% by weight, and the zinc is 5 to 20 weights The bacardi is more than 100% in nickel, and the zinc content is 15 to 3 weight percent, and the alloy 15 is: ~ the percentage of weight is just %; the invention is a kind of conductive film protective layer / 5 gold dry material It may contain precious metals and/or metal-resistant metals. The metal shall be selected from at least one of turning, winter, and 'palladium. The content is 0.1 to 50 8%, and the optimum content is 〇·5 to 1〇. Percentage by weight; corrosion resistance is the toughness of alloys after splashing on the panel or substrate, and 20 2 good conductivity depends on the adhesion of the panel or substrate, wherein the residual metal is selected from titanium. At least one of chains, drills, chrome and mixtures thereof, "the ruthenium is between 〇·01 and 丨·0% by weight, and the optimum content is 0.05 to 〇. · 2 weights 1 percentage. The conductive film for the conductive film or the protective layer thereof of the invention can be applied to the sputtering process of any substrate, preferably for forming a wire, an electrode or an auxiliary on a panel or a substrate of a semiconductor or 8 1254747 5 10 15 surface display (4). Electrode or = protective layer. The purple forming method of the conductive film for the conductive film or the protective layer thereof of the present invention is characterized in that copper, nickel and zinc are first mixed with a suitable proportion, then smelted into an ingot and then processed by a heat machine to form an ingot. Alloy target. The reviewer can better understand the technical content of the present invention, and the composite material for the electro-optical film or the protective layer thereof and the embodiment thereof are as follows: Ignorance Cookware Example 1 | Alloy film material for electric film or protective layer thereof The manufacturing method will be 45 kilograms of copper, u.25 kilograms of weight, _ kilogram of zinc and 75. The weight of the mixture is mixed with the weight of the material, and it is placed in a vacuum smelting furnace with a degree of vacuum of ... Torr. Heating under u〇〇~i3〇〇〇c is small: After the mixture is completely dissolved, the metal is melted. The soup is poured into the mold and the key is lean. After cooling and solidifying, the alloy casting key is taken out from the mold. According to the required dry material size, the obtained casting material is controlled by the forging = hot rolling method to control the crystal direction to be no preferred direction, and then the grain size of the microstructure of the microstructure is controlled after treatment, and the alloy target is formed. 3 5 〇 未 ' 以 实施 实施 实施 实施 实施 实施 实施 实施 2 2 2 2 2 2 于 平面 平面 平面 平面 平面 平面 平面 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 1 20 20 20 20 20 20 20 20 20 20 In the sputtering chamber, the wire pattern is pre-formed on the substrate, and then argon gas with a flow rate of 2 〇sccm is introduced, and the DC power of 2 〇〇w is used, and the sputtering chamber is sputtered for 5 minutes on the wire pattern under a vacuum of 5 mtorr. Forming a protective layer with a thickness of GOO A. The protective layer is tested by oxygen plasma to obtain good oxidation resistance. After 85t/RH85% high temperature and high humidity test, the rubber is peeled and tested (peeling). Good adhesion verification can be obtained. 10 15 Beishi Example 3 alloy dry material storage clock forms a conductive film on a flat panel display. The composite wire manufactured by m is placed in a bell chamber and placed on a substrate of a surface display. In the money room, after the flow of 2 〇sccm argon hole '100 VDC power' machine room to maintain 5 plus (10) straight space production rhyme 1 minute on the substrate - thickness of 11 called wire pattern ^ line The pattern can be obtained by the helium gas fusion test. The oxidation resistance, after the machine / RH85% to the high temperature and humidity test, the good adhesion verification. 仃 从 从 从 从 可 可 可 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良 良The characteristics of the adhesion of the crucible; the formed semiconductor or flat display port of the existing copper alloy button engraving, in the protective layer. 'ί or the formation of a conductive pattern on the substrate or its protection 20 1254747 The above embodiment is for convenience only For example, the scope of the claims should be based on the scope of the patent application, and is not limited to the above embodiments.

【主要元件符號說明】 無 10[Main component symbol description] None 10

1111

Claims (1)

1254747 十、申請專利範圍： 1. 一種導電薄膜保護層用之合金靶材，至少包含銅 (Cu)、鎳（Ni)以及鋅（Zn); /、中銅含量為50至80重量百分比，鎳含量為5至2〇重 里百分比，鋅含量為15至3〇重量百分比，且合金靶材之總 重量百分比為100%。 人八2·如申請專利範圍第1項所述之導電薄膜保護層用之 合金靶材，其中銅最佳含量為60至70重量百分比。 10 入八3·如申請專利範圍第1項所述之導電薄膜保護層用之 合金乾材’其中鎳最佳含量為10至15重量百分比。曰 八八4.如申請專利範圍第1項所述之導電薄膜保護層用之 α至靶材，其中鋅最佳含量為20至25重量百分比。 人八【如申請專利範圍第1項所述之導電薄膜保護層用之 15 ::::之更一包含貴金屬’其係選自翻(pt)、金(心)及鈀㈣ 合金申請專利範圍第5項所述之導電薄膜保護層用之 7 ’其中貴金屬含量為0.1至5.0重量百分比。 合全革巴叔如申請專利範圍第6項所述之導電薄膜保護層用之 2。量百分比：其中貴金屬為罐)’其最佳含量為。·。重 合二:申Λ專主利範圍第6項所述之導電薄膜保護層用之 重量百分比:、中貴金屬為金(AU)’其最佳含量為0.5至1.0 12 1254747 9 κ 合金 °申請專利範圍第6項所述之導電薄膜保護層用之 番旦材其中貴金屬為鈀（Pd)，其最佳含量為〇5至1〇 里里百分比。 · 合金乾〇材如，申請專利範圍第1項所述之導電薄膜保護層用之 、h ，更包含耐蝕性金屬，其係選自鈦、鋁、鈷、鉻 /、物至少其中之一。 之合：广申請專利範圍第1〇項所述之導電薄膜保護層用 比。土巴材，其中耐蝕性金屬含量為〇·〇1至1.0重量百分 10 之合申請專利範圍第11項所述之導電薄膜保護層用 〇·2重量百八匕其中耐蝕性金屬為鈦，其最佳含量為0·〇5至 之合::材申？:胸第11項所述之導電薄膜保護層用 μ 〇2重量百:比其中耐㈣金屬為銘，其最佳含量為〇〇5至 之合請範圍第11項所述之導電薄膜保護層用 u重量純金屬絲，其最佳含量為⑽至 20 入^如中請專利範圍第η項所述之導電薄膜保護層用 之口盘靶材，其中耐蝕性金屬為絡 a 0.2重量百分比。 K土 3!為0.05至 16·如申請專·圍第丨項所述之導 合金乾材，其係應用於半導體或平面顯示器:面蒦= 板，於導線、電極或辅助電極上形成保護層。 s 土 13 1254747 17· —種導電薄膜用之合金靶材，至少包含鋼（c^、錄 (Ni)以及鋅（Zn); 其中銅含量為50至80重量百分比，鎳含量為5至2〇重1254747 X. Patent application scope: 1. An alloy target for conductive film protective layer containing at least copper (Cu), nickel (Ni) and zinc (Zn); /, medium copper content of 50 to 80% by weight, nickel The content is 5 to 2 weight percent, the zinc content is 15 to 3 weight percent, and the total weight percentage of the alloy target is 100%. The alloy target for an electroconductive thin film protective layer according to claim 1, wherein the optimum content of copper is 60 to 70% by weight. 10 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。八 八。 4. The α to target for the conductive film protective layer according to claim 1, wherein the optimum content of zinc is 20 to 25 weight percent. [8] [15] The conductive film protective layer described in the first paragraph of the patent application is as follows: 15::: The other one contains precious metals, which are selected from the patents of pt, gold, and palladium. The conductive film protective layer according to Item 5, wherein the noble metal content is from 0.1 to 5.0% by weight. For the purpose of applying for the protective layer of conductive film as described in item 6 of the patent application. Percentage: wherein the precious metal is a can). The optimum content is . ·. Coincidence 2: The weight percentage of the conductive film protective layer mentioned in item 6 of the application scope of the application: the medium precious metal is gold (AU)', and the optimum content is 0.5 to 1.0 12 1254747 9 κ alloy ° patent application range In the conductive film protective layer according to Item 6, the noble metal is palladium (Pd), and the optimum content thereof is 〇5 to 1 〇. The alloy dry coffin is, for example, the conductive film protective layer according to the first aspect of the patent application, h, further comprising a corrosion-resistant metal selected from at least one of titanium, aluminum, cobalt, chromium/. The combination of the conductive film protective layer described in the first application of the patent application scope. Tuba material, wherein the corrosion resistant metal content is 〇·〇1 to 1.0 weight percent 10, and the conductive film protective layer described in Item 11 is 〇·2 weight hundred 匕, wherein the corrosion resistant metal is titanium. The optimum content is 0·〇5 to the combination:: material application? : The conductive film protective layer described in Item 11 of the chest is used for μ 〇 2 weight: compared with the resistance of (4) metal, the optimum content is 〇〇5 to the range of the conductive film protective layer described in item 11 The U-weight pure metal wire has an optimum content of (10) to 20, which is a disk target for a conductive film protective layer as described in the above-mentioned patent scope, wherein the corrosion-resistant metal is 0.2 by weight. K soil 3! is 0.05 to 16 · As applied in the special alloy dry material described in the article, it is applied to semiconductor or flat panel display: surface 蒦 = plate, forming a protective layer on the wire, electrode or auxiliary electrode . s Earth 13 1254747 17·—A kind of alloy target for conductive film, containing at least steel (c^, Ni (Ni) and zinc (Zn); wherein the copper content is 50 to 80% by weight, and the nickel content is 5 to 2〇 weight 10 15 量百分比，鋅含量為15至30重量百分比，且合金耙材之總 重量百分比為100%。 18.如申請專利範圍第17項所述之導電薄膜用之合金 革巴材’其中銅最佳含量為60至70重量百分比。 19·如申請專利範圍第17項所述之導電薄膜用之合金 革巴材’其中鎳最佳含量為1〇至15重量百分比。 口 2〇·如申請專利範圍第17項所述之導電薄膜用之合金 1巴材’其中鋅最佳含量為20至25重量百分比。 21·如申請專利範圍第17項所述之導電薄膜用之合金 ^ ’更包含貴金屬，其係選自銘（Pt)、金（Au)及把（pd) 夕其中之—。 22.如申請專利範圍第21項所述之導電薄膜用之合金 巴材，其中貴金屬含量為〇1至5.〇重量百分比。 靶材23Π^專利範圍第22項所述之導電薄膜用之合金 八，其中貴金屬為鉑（pt)，其最佳含量為0.5至1〇重量百 • 20 · °曱請專利範圍第22項所述之導電薄膜用之 yV ，其中貴金屬為金（An)，其最佳含量為0.5至丨〇重 分比。 土丄⑴里 14 1254747 25.如中請專利範圍第22項所述之導電薄膜用之合金 八’其中貴金屬為麵（Pd)，其最佳含量為〇5至1〇重量百 刀比。 26·如中請專利範圍第17項所述之導電薄膜用之合金 ，更包含耐蝕性金屬，其係選自鈦、在呂、鈷、鉻及其 心合物至少其中之_。 27·如巾請專利範圍第％項所述之導電薄膜用之合金 % 材，其中耐蝕性金屬含量為重量百分比。 1 28·如中請專利範圍第27項所述之導電薄膜用之合金 才其中耐钱性金屬為鈦，其最佳含量為〇〇5至〇2重量 百分比。 · 29·如t請專利範圍第27項所述之導電薄膜用之合金 材其中耐蝕性金屬為鋁，其最佳含量為〇 〇5至〇.2重量 百分比。 15 ^ 〇·如申睛專利範圍第27項所述之導電薄膜用之合金 才其中耐蝕性金屬為鈷，其最佳含量為〇 〇5至〇·2重量 百分比。 萆巴3 1 ·如申喷專利範圍第27項所述之導電薄膜用之合金 2〇 ，其中耐蝕性金屬為鉻，其最佳含量為0.05至0.2重量 乾32·如申睛專利範圍第17項所述之導電薄膜用之合金 =材’其係應用於半導體或平面顯示器之面板或基板形成 ^線、電極或輔助電極。 15 1254747 之合=°材2,專圍第33項所述之導電薄膜保護層用 其係選自鈇、ΓΓ’其中步驟（A)更加人耐㈣金屬， 鈦鋁、鈷、鉻及其混合物至少其中之一。 之人々 U利乾圍第39項所述之導電薄膜保護層用 :::材之製造方法’其中耐蝕性金屬含量為0.01至10 垔里百分比。 之人t如中請專利範圍第4G項所述之導電薄膜保護層用 旦：i巴材之製造方法’其中耐蝕性金屬為鈦，其最佳含 里為0.05至0.2重量百分比。 ίο 15 20 之合專/=圍第4G項所述之導㈣膜保護層用 量為二耐錄仙 =·如申請專利範圍第40項所述之導電薄膜保護層用 旦。金㈣之製造方法，其中耐錄金屬域，其最佳 里為0.05至0.2重量百分比。 44. 如申請專利範圍第4〇項所述之導電薄膜保護層用 曰^金㈣之製造方法，其切純金屬為鉻， 夏為0.05至0.2重量百分比。 45. —種如申請專利範圍第17項所述 之合金㈣之製造方法，包含下財驟： $_用 料，㈧將銅（CU)、鎳㈤）以及鋅（Zn)依適當比例混合備 二置於真工中以電孤溶化，且利用一溶煉方法製成一 k ’其中該輯方法為真空溶煉法或真空精煉法；以及 17 1254747 (B)將該料進行_熱機加工 .材’其中該熱機加工程序包含 ^一合金乾 組合。 …，袞〔、熱處理及其 4 6 ·如申請專利銘固# λ p y • 5靶材之f造方法，工、所述之導電薄膜用之合金 」 中步驟(Α)更加入貴金屬，1传選自始 (Pt)、金（Au)及鈀（Pd)至少其中之一。 ，、係k自鉑 4 7 ·如申請專利簕笛“ s 靶材…方ή: 所述之導電薄膜用之合金 才之“方法，其中貴金屬含量為0」至5.0重量百分比 ίο 革巴材4之 專^圍第47項所述之導電薄膜用之合金 年巴材之製造方法，其中眚令 工 幻.0重量百分比。胃“為_，其最佳含量為〇.5 49·如申請專利範圍第47：ι:百&、+、々、皆^ •材之製造方法，其中薄膜用之合金 至U)重量百分比。η屬為金㈣，其最佳含量為0.5 15 50·如申請專利範圍第47項所述之導電薄膜用之合金 靶材之製造方法，其中貴金屬為鈀（Pd)， 幻.0重量百分比。 ϋ土含I為0·5 20 51•如申請專利範圍第45項所述之導電薄膜用之人全 靶材之製造方法’其中步驟⑷更加入耐蝕性金屬，其：選 自鈦、鋁、鈷、鉻及其混合物至少其中之—。 “ k 52_如申請專利範圍第51項所述之導電薄膜用之合金 靶材之製造方法，其中耐蝕性金屬含量為〇 〇 1至丨旦 分比。 $百 18 1254747 靶材之萝迕方去苴 、之v电缚膜用之合金 爻衣k方法，其中耐蝕性金屬為鈦，其 王 至〇·2重量百分比。 3里為0.05 54.如申請專利範圍第52項所述之導電薄膜用之合八 靶材之製造方法，其中耐蝕性金屬為鋁，其最佳人旦。金 裏0.2重量百分比。 4-()5 55·如申請專利範圍第52項所述之導電薄膜用之合八 粑材之製仏方去，其中耐蝕性金屬為鈷，其最佳含旦5 I 灵〇·2重量百分比。 里4〇·05 10 56·如申請專利範圍第52項所述之導電薄膜用之合八 粑材之製造方法，其中耐蝕性金屬為鉻，其最佳含"金 至_〇.2重量百分比。 ''' 〇·〇5 1510 15 % by weight, the zinc content is 15 to 30 weight percent, and the total weight percentage of the alloy coffin is 100%. 18. The alloy leather material for an electroconductive film according to claim 17, wherein the copper content is from 60 to 70% by weight. 19. The alloy leather material for an electroconductive film according to claim 17, wherein the optimum content of nickel is from 1 Torr to 15% by weight. Port 2〇 The alloy for the conductive film according to claim 17 of the patent application, wherein the optimum content of zinc is 20 to 25 weight percent. 21· The alloy for conductive film according to claim 17 of the patent application is further comprising a precious metal selected from the group consisting of Ming (Pt), gold (Au) and (pd). 22. The alloy material for an electroconductive film according to claim 21, wherein the precious metal content is 〇1 to 5. 〇 by weight. The target material 23 Π ^ alloy of the conductive film described in Item 22 of the patent range, wherein the precious metal is platinum (pt), and the optimum content is 0.5 to 1 〇, and the weight is 100 • 20 ° °. The yV used for the conductive film, wherein the noble metal is gold (An), and the optimum content thereof is 0.5 to 丨〇 by weight. In the soil (1) 14 1254747 25. The alloy for the conductive film described in the 22nd paragraph of the patent application, wherein the noble metal is the surface (Pd), the optimum content is 〇5 to 1 〇 by weight. 26. The alloy for an electroconductive film according to claim 17, further comprising a corrosion-resistant metal selected from the group consisting of titanium, at least ruthenium, cobalt, chromium and a composite thereof. 27· For the towel, please use the alloy % material for the conductive film mentioned in the scope of the patent item, wherein the corrosion-resistant metal content is percentage by weight. 1 28. The alloy for conductive film according to item 27 of the patent application is wherein the nitrimetric metal is titanium, and the optimum content is 〇〇5 to 〇2 by weight. · 29· If you want to use the alloy for conductive film described in item 27 of the patent scope, the corrosion-resistant metal is aluminum, and the optimum content is 〇5 to 〇.2 by weight. 15 ^ 〇 · The alloy for conductive film described in the scope of patent application No. 27, wherein the corrosion-resistant metal is cobalt, and the optimum content is 〇 5 to 〇 2 by weight.萆巴3 1 · The alloy for conductive film according to item 27 of the patent application scope, in which the corrosion-resistant metal is chromium, the optimum content is 0.05 to 0.2 weight dry 32. The alloy for the conductive film described in the article is applied to a panel or substrate of a semiconductor or flat panel display to form a wire, an electrode or an auxiliary electrode. 15 1254747 combination = ° material 2, specifically for the conductive film protective layer described in item 33, which is selected from the group consisting of 鈇, ΓΓ', wherein step (A) is more resistant to humans (tetra), titanium aluminum, cobalt, chromium and mixtures thereof At least one of them. The manufacturing method of the conductive film protective layer described in Item 39 of Ulikanwei, the corrosion-resistant metal content is 0.01 to 10 垔. The person who has the conductive film protective layer described in the fourth paragraph of the patent scope uses the method of manufacturing the material of the invention, wherein the corrosion-resistant metal is titanium, and the optimum content thereof is 0.05 to 0.2% by weight. Ίο 15 20 / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / The manufacturing method of the gold (four), wherein the metallurgical domain is preferably 0.05 to 0.2% by weight. 44. The method for producing a conductive film protective layer according to the invention of claim 4, wherein the cut metal is chromium and the summer is 0.05 to 0.2 weight percent. 45. A manufacturing method for alloy (4) as described in claim 17 of the patent application, comprising the following fiscal rules: $_material, (8) mixing copper (CU), nickel (5), and zinc (Zn) in appropriate proportions The second is placed in the real work to be dissolved by electricity, and a k' is made by a melting method, wherein the method is vacuum melting or vacuum refining; and 17 1254747 (B) is subjected to heat processing. The material 'where the thermal machining program comprises a dry combination of alloys. ..., 衮 [, heat treatment and its 4 6 · If you apply for the patent Ming Gu # λ py • 5 target material manufacturing method, the alloy used in the conductive film described in the step (Α) added precious metals, 1 pass It is selected from at least one of the first (Pt), the gold (Au) and the palladium (Pd). ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The manufacturing method of the alloy annual bake material for the conductive film described in Item 47, wherein the weight is 0% by weight. The stomach is "y", and its optimum content is 〇.5 49. As in the patent application range 47: ι: 100 &, +, 々, ^, the manufacturing method of the material, wherein the alloy for the film to U) weight percentage η is a gold (four), the optimum content of which is 0.5 15 50. The method for producing an alloy target for an electroconductive film according to claim 47, wherein the noble metal is palladium (Pd), imaginary. 0% by weight The alumina containing I is 0·5 20 51. The method for producing a full-object for a conductive film according to claim 45 of the patent application, wherein the step (4) further comprises a corrosion-resistant metal, which is selected from the group consisting of titanium and aluminum. And a mixture of cobalt, chromium and a mixture thereof. The method for producing an alloy target for an electroconductive film according to claim 51, wherein the corrosion resistant metal content is 〇〇1 to 丨1 ratio. $100 18 1254747 The target of the radish 苴 苴 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 In the case of 3, it is 0.05 54. The method for producing a composite target for an electroconductive film according to claim 52, wherein the corrosion-resistant metal is aluminum, which is the best one. Gold is 0.2% by weight. 4-()5 55· As described in claim 52, the conductive film for the conductive film is made of bismuth, wherein the corrosion-resistant metal is cobalt, and the optimum contains 5 〇 〇 2 2 weight percentage.里 4〇·05 10 56· The manufacturing method of the octagonal material for the electroconductive film according to claim 52, wherein the corrosion-resistant metal is chromium, and the best contains "gold to _〇.2 weight percentage. ''' 〇·〇5 15 1919
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