CN100451161C - Conductive membrane or its protective layer used alloy target material and manufacture thereof - Google Patents

Conductive membrane or its protective layer used alloy target material and manufacture thereof Download PDF

Info

Publication number
CN100451161C
CN100451161C CNB2005100996992A CN200510099699A CN100451161C CN 100451161 C CN100451161 C CN 100451161C CN B2005100996992 A CNB2005100996992 A CN B2005100996992A CN 200510099699 A CN200510099699 A CN 200510099699A CN 100451161 C CN100451161 C CN 100451161C
Authority
CN
China
Prior art keywords
target material
alloy target
protective layer
conductive film
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005100996992A
Other languages
Chinese (zh)
Other versions
CN1928135A (en
Inventor
张毅
赵勤孝
黄添旺
陈虹桦
张锦泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GUANGYANG APPLIED MATERIAL SCIENCE & TECHNOLOGY Co Ltd
RiTdisplay Corp
Original Assignee
GUANGYANG APPLIED MATERIAL SCIENCE & TECHNOLOGY Co Ltd
RiTdisplay Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GUANGYANG APPLIED MATERIAL SCIENCE & TECHNOLOGY Co Ltd, RiTdisplay Corp filed Critical GUANGYANG APPLIED MATERIAL SCIENCE & TECHNOLOGY Co Ltd
Priority to CNB2005100996992A priority Critical patent/CN100451161C/en
Publication of CN1928135A publication Critical patent/CN1928135A/en
Application granted granted Critical
Publication of CN100451161C publication Critical patent/CN100451161C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The present invention is one kind of alloy target material for producing conducting film and protecting layer. The alloy target material consists of Cu 50-80 wt%, Ni 5-20 wt% and Zn 15-30 wt%.

Description

Conductive film or its protective layer used alloy target material and manufacture method thereof
Technical field
The invention relates to a kind of conductive film or its protective layer used alloy target material and manufacture method thereof; especially refer to that a kind of conductive film lead, electrode or supporting electrode of semiconductor substrate or plane display substrate of being applicable to is in processing procedure; need to strengthen its oxidation-resistance and sticking power, to promote product yield and reliability by protective layer.
Background technology
Flat-panel screens (liquid-crystal display (Liquid Crystal Display for example, LCD), organic electro-luminescent display (Organic Electroluminescent Display, OELD) etc.), therefore replace the focus that cathode-ray tube display becomes indicating meter gradually owing to have compact characteristic.And various flat-panel screens (as LCD, OELD etc.) though composition structure or the technique means of its show image each is variant, but utilize in the various plane display device structure more tool conductive material (for example indium tin oxide (ITO) or aluminium zinc oxide (AZO)) on substrate as anode, cooperate the control texture of the negative electrode of low workfunction metal or alloy again as light emitting pixel.
Though known have good electrical conductivity with silver or silver alloys as the lead of semiconductor substrate or plane display substrate or the material of electrode, yet, easily cause process rate on the low side because its oxidation-resistance or sticking power are not good.Therefore seek that oxidation-resistance is good, the metal or alloy film of strong adhesion is applied to semiconductor substrate or plane display substrate as the protective layer of lead or electrode, become important topic.
Summary of the invention
The object of the present invention is to provide protective layer used alloy target material of a kind of conductive film and manufacture method thereof; the protective layer of the good and high tack of oxidation-resistance can be provided on lead, electrode or supporting electrode; avoid lead, electrode or supporting electrode in successive process, for example at oxygen plasma (O 2Plasma) cleaning or etch phase are damaged, to improve product yield and reliability.
The alloy target material and the manufacture method thereof that provide a kind of conductive film to use is provided a further object of the present invention, can be used to form lead, electrode or supporting electrode, oxidation-resistance is good, resistance value is low, electroconductibility is good and high tack to provide, avoid lead, electrode or supporting electrode in successive process, for example be damaged, to improve product yield and reliability in oxygen plasma cleaning or etch phase.
For achieving the above object, the protective layer used alloy target material of conductive film provided by the invention comprises copper (Cu), nickel (Ni) and zinc (Zn) at least;
Wherein copper content is 50 to 80 weight percents, and nickel content is 5 to 20 weight percents, and zinc content is 15 to 30 weight percents, and the total weight percent of alloy target material is 100%.
The alloy target material that described conductive film is protective layer used also comprises precious metal, its be selected from platinum (Pt), gold (Au) and palladium (Pd) at least one of them.
The alloy target material that described conductive film is protective layer used, wherein bullion content is 0.1 to 5.0 weight percent.
The alloy target material that described conductive film is protective layer used also comprises corrosion resistant metal, its be selected from titanium, aluminium, cobalt, chromium and composition thereof at least one of them.
The alloy target material that described conductive film is protective layer used, panel or substrate that it is applied to semi-conductor or flat-panel screens form protective layer on lead, electrode or supporting electrode.
The alloy target material that conductive film provided by the invention is used comprises copper (Cu), nickel (Ni) and zinc (Zn) at least;
Wherein copper content is 50 to 80 weight percents, and nickel content is 5 to 20 weight percents, and zinc content is 15 to 30 weight percents, and the total weight percent of alloy target material is 100%.
The alloy target material that described conductive film is used is characterized in that, also comprises precious metal, its be selected from platinum (Pt), gold (Au) and palladium (Pd) at least one of them.
The alloy target material that described conductive film is used, wherein bullion content is 0.1 to 5.0 weight percent.
The alloy target material that described conductive film is used also comprises corrosion resistant metal, its be selected from titanium, aluminium, cobalt, chromium and composition thereof at least one of them.
The alloy target material that described conductive film is used, its panel or substrate that is applied to semi-conductor or flat-panel screens forms lead, electrode or supporting electrode.
The manufacture method of conductive film provided by the invention or its protective layer used alloy target material comprises the following step: (A) earlier copper, nickel and zinc are mixed according to suitable proportion and get the raw materials ready, carry out melting, make ingot casting; Wherein copper content is 50 to 80 weight percents, and nickel content is 5 to 20 weight percents, and zinc content is 15 to 30 weight percents, and the total weight percent of alloy target material is 100%.
Melting method can be atmosphere smelting process, vacuum melting method or vacuum refinement method, and wherein the vacuum tightness of vacuum melting is about 10 -1-10 -3Torr.
Hot machinings such as step (B) is for example forged ingot casting again, hot roll extrusion or thermal treatment are to form alloy target material.
The manufacture method of a kind of conductive film of the present invention or its protective layer used alloy target material also can add precious metal and/or corrosion resistant metal in step (A); Precious metal be selected from platinum, gold and palladium at least one of them, its content is 0.1 to 5.0 weight percent, optimum content is 0.5 to 1.0 weight percent; Corrosion resistant metal be selected from titanium, aluminium, cobalt, chromium and composition thereof at least one of them, its content is 0.01 to 1.0 weight percent, optimum content is 0.05 to 0.2 weight percent.
The present invention uses pack fong and makes alloy target material, and its formed protective layer has the characteristics of the good and high tack of oxidation-resistance; Its formed lead, electrode or supporting electrode have that oxidation-resistance is good, resistance value is low, electroconductibility is good and the characteristics of high tack; and can cooperate the etching solution of existing copper alloy, on the panel of semi-conductor or flat-panel screens or substrate, form conduction pattern or its protective layer.
Embodiment
The alloy target material that conductive film of the present invention is protective layer used, at least comprise copper, nickel and zinc, wherein copper content is 50 to 80 weight percents, and nickel content is 5 to 20 weight percents, zinc content is 15 to 30 weight percents, and the total weight percent of alloy target material is 100%; The protective layer used alloy target material of conductive film of the present invention also can comprise precious metal and/or corrosion resistant metal, precious metal be selected from platinum, gold and palladium at least one of them, its content is 0.1 to 5.0 weight percent, optimum content is 0.5 to 1.0 weight percent; Corrosion resistant metal can be strengthened the solidity to corrosion of alloy target material sputter behind panel or substrate, and improve the tack of conductive film on panel or substrate, wherein corrosion resistant metal be preferably be selected from titanium, aluminium, cobalt, chromium and composition thereof at least one of them, its preferable content is between 0.01 to 1.0 weight percent, and optimum content is 0.05 to 0.2 weight percent.Conductive film of the present invention or its protective layer used alloy target material be applicable to the sputter process of any substrate, preferably for forming lead, electrode or supporting electrode or its protective layer on the panel that is applicable to semi-conductor or flat-panel screens or the substrate.The manufacture method of conductive film of the present invention or its protective layer used alloy target material is after earlier copper, nickel and zinc being got the raw materials ready according to the suitable proportion mixing, to carry out melting, makes ingot casting, again through hot machining, to form alloy target material.
For more understanding technology contents of the present invention, be described as follows especially exemplified by conductive film or its protective layer used alloy target material and manufacture method preferred embodiment thereof:
Embodiment 1: the manufacture method of conductive film or its protective layer used alloy target material
45 kilogram weights copper, 11.25 kilogram weights nickel, 18.75 kilogram weights zinc and the platinum mixing of 750 gram weight are got the raw materials ready, and placing vacuum tightness is 10 -1-10 -3In the vacuum melting furnace of torr in 1100-1300 ℃ down heating carried out melting in 3-5 hour, after material to be mixed melts fully, Metal Melting soup is poured in the mould, treat its cooling curing after, in mould, take out alloy cast ingot.The ingot casting of gained is according to required target size, forge mode and hot roll extrusion mode more than 80 horsepowers with the 600-800 ton, control its crystallization direction and be no preferred orientations, the grain size number of after heat treatment controlling its microtexture again is about the 20-50 micron, to form alloy target material.
Embodiment 2: the alloy target material sputter forms the conductive film protective layer in flat-panel screens
The alloy target material that embodiment 1 makes is inserted a sputtering chamber; and the substrate of inserting a flat-panel screens is in sputtering chamber; be pre-formed the lead pattern on the substrate; feed the hydrogen of flow 20sccm afterwards; dc electric power with 200W; sputtering chamber keeps under the 5mtorr vacuum tightness sputter, and to form a thickness in 1.5 minutes on the lead pattern be the protective layer of 1300A; protective layer is tested through oxygen plasma; can obtain good oxidation-resistance; again after the hot and humid experiment of 85 ℃/RH85%; carry out stripping test (peeling test) with adhesive tape, can obtain the checking of good tack.
Embodiment 3: the alloy target material sputter forms conductive film in flat-panel screens
The alloy target material that embodiment 1 makes is inserted a sputtering chamber, and the substrate of inserting a flat-panel screens is in sputtering chamber, the hydrogen of back feeding flow 20sccm, dc electric power with 100W, sputtering chamber keeps under the 5mtorr vacuum tightness sputter, and to form a thickness in 1 minute on substrate be the lead pattern of 1100A, the lead pattern is tested through oxygen plasma, can obtain good oxidation-resistance, again after the hot and humid experiment of 85 ℃/RH85%, carry out stripping test with adhesive tape, can obtain the checking of good tack.
The present invention uses pack fong and makes alloy target material, and its formed protective layer has the characteristics of the good and high tack of oxidation-resistance; Its formed lead, electrode or supporting electrode have that oxidation-resistance is good, resistance value is low, electroconductibility is good and the characteristics of high tack; and can cooperate the etching solution of existing copper alloy, on the panel of semi-conductor or flat-panel screens or substrate, form conduction pattern or its protective layer.
The foregoing description only is to give an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.

Claims (8)

1. alloy target material that conductive film is protective layer used, panel or substrate that it is applied to semi-conductor or flat-panel screens form protective layer on lead, electrode or supporting electrode, and comprise copper at least, nickel and zinc;
Wherein copper content is 50 to 80 weight percents, and nickel content is 5 to 20 weight percents, and zinc content is 15 to 30 weight percents, and the total weight percent of alloy target material is 100%.
2. the protective layer used alloy target material of conductive film as claimed in claim 1 is characterized in that, also comprises precious metal, its be selected from platinum, gold and palladium at least one of them.
3. the protective layer used alloy target material of conductive film as claimed in claim 2 is characterized in that, wherein bullion content is 0.1 to 5.0 weight percent.
4. the protective layer used alloy target material of conductive film as claimed in claim 1 is characterized in that, also comprises corrosion resistant metal, its be selected from titanium, aluminium, cobalt, chromium and composition thereof at least one of them.
5. alloy target material that conductive film is used, its panel or substrate that is applied to semi-conductor or flat-panel screens forms lead, electrode or supporting electrode, and comprises copper, nickel and zinc at least;
Wherein copper content is 50 to 80 weight percents, and nickel content is 5 to 20 weight percents, and zinc content is 15 to 30 weight percents, and the total weight percent of alloy target material is 100%.
6. the alloy target material that conductive film as claimed in claim 5 is used is characterized in that, also comprises precious metal, its be selected from platinum, gold and palladium at least one of them.
7. the alloy target material that conductive film as claimed in claim 6 is used is characterized in that, wherein bullion content is 0.1 to 5.0 weight percent.
8. the alloy target material that conductive film as claimed in claim 5 is used is characterized in that, also comprises corrosion resistant metal, its be selected from titanium, aluminium, cobalt, chromium and composition thereof at least one of them.
CNB2005100996992A 2005-09-07 2005-09-07 Conductive membrane or its protective layer used alloy target material and manufacture thereof Expired - Fee Related CN100451161C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2005100996992A CN100451161C (en) 2005-09-07 2005-09-07 Conductive membrane or its protective layer used alloy target material and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2005100996992A CN100451161C (en) 2005-09-07 2005-09-07 Conductive membrane or its protective layer used alloy target material and manufacture thereof

Publications (2)

Publication Number Publication Date
CN1928135A CN1928135A (en) 2007-03-14
CN100451161C true CN100451161C (en) 2009-01-14

Family

ID=37858266

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100996992A Expired - Fee Related CN100451161C (en) 2005-09-07 2005-09-07 Conductive membrane or its protective layer used alloy target material and manufacture thereof

Country Status (1)

Country Link
CN (1) CN100451161C (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102758100B (en) * 2012-07-18 2014-03-19 宁波兴业盛泰集团有限公司 High-strength high-elasticity zinc-copper-nickel alloy and processing method thereof
CN103515798B (en) * 2013-09-06 2015-08-05 浙江一舟电子科技股份有限公司 A kind of HDMI switcher

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08297858A (en) * 1995-04-27 1996-11-12 Pioneer Video Corp Optical disk and its production
EP1130625A2 (en) * 2000-03-02 2001-09-05 Applied Materials, Inc. Method of sputter depositing copper films
CN1458292A (en) * 2002-05-14 2003-11-26 同和矿业株式会社 Copper base alloy with improved punchin and impacting performance and its preparing method
CN1480554A (en) * 2002-09-03 2004-03-10 铼宝科技股份有限公司 Alloy target material for conduction film and its preparation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08297858A (en) * 1995-04-27 1996-11-12 Pioneer Video Corp Optical disk and its production
EP1130625A2 (en) * 2000-03-02 2001-09-05 Applied Materials, Inc. Method of sputter depositing copper films
CN1458292A (en) * 2002-05-14 2003-11-26 同和矿业株式会社 Copper base alloy with improved punchin and impacting performance and its preparing method
CN1480554A (en) * 2002-09-03 2004-03-10 铼宝科技股份有限公司 Alloy target material for conduction film and its preparation method

Also Published As

Publication number Publication date
CN1928135A (en) 2007-03-14

Similar Documents

Publication Publication Date Title
JP5541651B2 (en) Sputtering target for wiring film formation for thin film transistors
JP4815194B2 (en) Conductive thin film, alloy target material for protective layer thereof, and manufacturing method thereof
CN109306414A (en) Silver alloy target, film and preparation method thereof
TWI525203B (en) Silver alloy sputtering target for forming conductive film and its manufacturing method
KR101804660B1 (en) Laminated wiring film for electronic components and sputtering target material for forming coating layer
EP2803754A1 (en) Silver-alloy sputtering target for conductive-film formation, and method for producing same
JP5958822B2 (en) Method for producing Mo alloy sputtering target material and Mo alloy sputtering target material
KR102032085B1 (en) Laminate wiring layer for an electronic component and a sputtering target material for forming a coating layer
JP5339830B2 (en) Thin film transistor wiring film having excellent adhesion and sputtering target for forming this wiring film
TW201131001A (en) Silver alloy target for forming reflecting electrode film of organic el element, and its manufacturing method
JP2013133489A (en) Cu ALLOY SPUTTERING TARGET, METHOD FOR PRODUCING THE SAME, AND METAL THIN FILM
CN104838038A (en) Ag-In alloy sputtering target
CN100451161C (en) Conductive membrane or its protective layer used alloy target material and manufacture thereof
TW574383B (en) Alloy target for conductive film
CN104342574A (en) Copper alloy sputtering target and manufacturing method of copper alloy sputtering target
JP5125112B2 (en) Wiring and electrode for liquid crystal display device free from thermal defect and sputtering target for forming them
CN1197990C (en) Alloy target material for conduction film and its preparation method
TW201627505A (en) Sputtering target and layered film
JP2015061933A (en) Sputtering target material for forming coating layer, and manufacturing method thereof
CN105023627A (en) Film having high conductivity and oxidation resistance and preparing method thereof
JP2008191542A (en) Laminated wiring and laminated electrode for liquid crystal display device excellent in adhesion without causing thermal defect, and method for forming them
CN100466880C (en) Electrode substrate of two-dimensional display
JP2011190527A (en) Sputtering target
JP2009169268A (en) Wire and electrode of excellent adhesiveness for liquid crystal display
TW202120724A (en) Ag alloy sputtering target and Ag alloy film

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090114

Termination date: 20190907