CN1480554A - Alloy target material for conduction film and its preparation method - Google Patents
Alloy target material for conduction film and its preparation method Download PDFInfo
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- CN1480554A CN1480554A CNA021322511A CN02132251A CN1480554A CN 1480554 A CN1480554 A CN 1480554A CN A021322511 A CNA021322511 A CN A021322511A CN 02132251 A CN02132251 A CN 02132251A CN 1480554 A CN1480554 A CN 1480554A
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Abstract
An alloy target used for electrically conductive film electrode contains Ag (80-99.8 atom%), Cu (0.1-10) and at least one noble metal (0.1-10) chosen from Pd, Au and Pt.
Description
Technical field
The present invention relates to the alloy target material that a kind of organic electroluminescence display device conductive film electrode is used, refer to the alloy target material that the membrane electrode of a kind of lead that is applicable to semiconductor substrate or organic electroluminescence display device display base plate or electrode is used especially.
Background technology
Flat-panel screens (for example OLED etc.) therefore replaces the focus that cathode-ray tube display becomes indicating meter gradually owing to have compact characteristic.And various flat-panel screens (as OLED etc.) though the composition structure or the technique means of its show image each is variant, utilize tool conductive material (indium tin oxide (Indium Tin Oxide for example in the various plane display device structure more; ITO) or aluminium zinc oxide (Aluminum Zinc Oxide; AZO) on substrate as anode, cooperate the control texture of the negative electrode of low workfunction metal or alloy again as light emitting pixel.
Present semi-conductor or organic electroluminescence display device use the material of chromium metal as lead more.Though chromium metal itself has certain electroconductibility, good erosion resistance and material characteristics such as the cost of material is low, but with the chromium metal during as the conductive film electrode, because the resistance value of chromium itself is higher than copper, metals such as silver, so the situation that is difficult for reaching low voltage drive luminescent layer show image is arranged, make the image of various flat-panel screens present the aspect and can't reach best control effect, simultaneously, its resistance value is slightly high, can increase because of intensification makes current consumption, reduce energy use efficiency, and when operation, flat-panel screens is heated up, and can influence the image demonstration of luminescent layer between between conductive film anode and low power function negative electrode.Therefore the investigator is seeking to utilize the material of the lower metal of resistance as wafer or display unit lead always.Proposal was once arranged in the past with the material of silver as wafer or display unit lead, but because no moderately stable target or etching solution constituent, so utilization is not widely arranged.
And silver content surpasses the silver alloys more than 80%, though resistance is generally low not as silver metal, but its resistance is far below the chromium metal, still be suitable wafer or display unit conductor material, yet because silver alloys does not have suitable target or etching solution, so be not widely used in the gold-tinted processing procedure of wafer or panel.
Summary of the invention
Main purpose of the present invention is at the alloy target material that provides a kind of organic electroluminescence display device conductive film electrode to use, can be when sputter, and the formation resistance value is low on panel or substrate, electroconductibility is good and the conductive film electrode or the supporting electrode of high tack.
Another object of the present invention is in the manufacture method that a kind of organic electroluminescence display device conductive film alloy for electrode target is provided, can form an alloy target material, with when the sputter, form on panel or substrate that resistance value is low, electroconductibility is good and the conductive film electrode metal of high tack.
For reaching above-mentioned purpose, the invention provides the alloy target material that a kind of organic electroluminescence display device conductive film electrode is used, be to comprise that silver (Ag), copper (Cu) and at least a noble metal are selected from by palladium (Pd), the group that gold (Au) and platinum (Pt) constitute; Wherein silver content is 80 to 99.8 atomic percents; Copper content is 0.1 to 10 atomic percent; Noble metal content is 0.1 to 10 atomic percent; And the total atom per-cent of alloy target material alloy is 100.
Described alloy target material, wherein noble metal is a palladium.
Described alloy target material, wherein noble metal is a gold.
Described alloy target material, wherein noble metal is a platinum.
Described alloy target material, it more comprises at least one erosion resistance metal, and wherein the erosion resistance metal is titanium, aluminium, nickel, cobalt or chromium.
Described alloy target material, wherein the erosion resistance metal is a titanium; And its titanium content is 0.01 to 5 atomic percent.
Described alloy target material, wherein the erosion resistance metal is a nickel; And its nickel content is 0.01 to 5 atomic percent.
Described alloy target material, wherein the erosion resistance metal is an aluminium; And its aluminium content is 0.01 to 5 atomic percent.
Described alloy target material, wherein the erosion resistance metal is a cobalt; And its cobalt contents is 0.01 to 5 atomic percent.
Described alloy target material, wherein the erosion resistance metal is a chromium; And its chromium content is 0.01 to 5 atomic percent.
Described alloy target material, it is the sputter that is used to form plane display substrate electrode or lead.
A kind of manufacture method of organic electroluminescence display device conductive film alloy for electrode target is to comprise following step:
(A) with silver (Ag), the powder composition of copper (Cu) and at least a noble metal evenly grinds and mixes the back and produces mother alloy with arc-melting, and wherein silver content is 80 to 99.8 atomic percents; Copper content is 0.1 to 10 atomic percent; Noble metal content is 0.1 to 10 atomic percent; And noble metal is at least a being selected from by palladium (Pd), the metal of the cohort that gold (Au) and platinum (Pt) constitute;
(B) silver is mixed with the mother alloy of before having made, place crucible, carry out vacuum melting, make ingot casting; And
(C) ingot casting is forged, hot machinings such as hot roll extrusion, thermal treatment, to form alloy target material.
Described manufacture method, wherein the metal mother alloy of step (A) more comprises at least one erosion resistance metal-powder, and wherein the erosion resistance metal is titanium, aluminium, nickel, cobalt or chromium.
Described manufacture method, wherein the erosion resistance metal of step (A) is a titanium; And its titanium content is 0.01 to 5 atomic percent in the metal mother alloy.
Described manufacture method, wherein the erosion resistance metal of step (A) is a nickel; And its nickel content is 0.01 to 5 atomic percent in the metal mother alloy.
Described manufacture method, wherein the erosion resistance metal of step (A) is an aluminium; And its aluminium content is 0.01 to 5 atomic percent in the metal mother alloy.
Described manufacture method, wherein the erosion resistance metal of step (A) is a cobalt; And its cobalt contents is 0.01 to 5 atomic percent in the metal mother alloy.
Described manufacture method, wherein the erosion resistance metal of step (A) is a chromium; And its chromium content is 0.01 to 5 atomic percent.
Alloy ratio and ingot casting weight according to institute's desire preparation, calculating is still needed and is added the quantity of silver (Ag), previous made mother alloy and silver-colored the mixing are got the raw materials ready, place vacuum melting furnace to carry out melting, after material to be mixed melts fully, Metal Melting soup is poured in the mould, after treating its cooling curing, take out the silver alloys ingot casting in mould, the ingot casting of gained is according to required target size, carry out hot machining again, to form alloy target material.
Description of drawings
Fig. 1 is the synoptic diagram of the sputter of organic electroluminescence display device conductive film electrode metal target of the present invention when implementing.
Embodiment
The alloy target material silver content that conductive film electrode of the present invention is used is about 80 to 99.8 atomic percents, is preferably silver content 90 to 99.8 atomic percents.The noble metal that also can optionally add use in the alloy target material that conductive film electrode of the present invention is used can be palladium (Pd), gold (Au), platinum (Pt) or its any blended form.The alloy target material that conductive film electrode of the present invention is used also can optionally add at least one erosion resistance metal with strengthen target in sputter in the erosion resistance behind the display panel substrate and improve the tack of conductive film electrode metal on display panel substrate; The erosion resistance metal of the Tian Jiaing preferable titanium that can be, aluminium, nickel, cobalt, chromium or its mixture wherein.The content of the erosion resistance metal that comprises in the alloy target material of the present invention does not have special restriction, is preferably the erosion resistance metal content between 0.01 to 5 atomic percent scope.The alloy target material that conductive film electrode of the present invention is used goes for the sputter of any substrate, is preferably the usefulness of the sputter that is suitable for forming plane display substrate electrode or lead.The manufacturing of the alloy target material that conductive film electrode of the present invention is used is first with silver (Ag), and copper (Cu) and at least a noble metal mixed smelting are made ingot casting to form.Wherein composition is preferable can more comprise at least one erosion resistance metal, and wherein the erosion resistance metal is titanium, aluminium, nickel, cobalt or chromium.The melting method of alloy target material of the present invention can be existing melting method, is preferably the atmosphere smelting process, vacuum melting method or vacuum refinement method.
Embodiment 1
The making of the alloy target material that the conductive film electrode is used
With the silver (Ag) of 2250 gram weight, the palladium (Pd) of copper of 250 gram weight (Cu) and 1000 gram weight mixes gets the raw materials ready.Afterwards, mixed metal is produced mother alloy with arc-melting.The silver (Ag) that adds 46500 gram weight mixes with previous made mother alloy gets the raw materials ready, place vacuum melting furnace to heat down and carried out melting in 3-5 hour in the 1100-1300 degree, after material to be mixed melts fully, Metal Melting soup is poured in the mould, after treating its cooling curing, in mould, take out the silver alloys ingot casting.The ingot casting of gained is according to required target size, make mode and hot roll extrusion mode more than 80 horsepowers with 600-800 ton satin, control its crystallization direction and be no preferred orientations, the grain size number of after heat treatment controlling its microtexture again is about the 20-50 micron, to form alloy target material.
Embodiment 2
The making of the alloy target material that the conductive film electrode is used
With the silver (Ag) of 1000 gram weight, the copper of 350 gram weight (Cu), the chromium of palladium of 600 gram weight (Pd) and 10 gram weight mix gets the raw materials ready.Afterwards, mixed metal is produced mother alloy with arc-melting.The silver (Ag) that adds 47045 gram weight mixes with previous made mother alloy gets the raw materials ready, place vacuum melting furnace under 1100-1300 degree temperature, to heat and carried out melting in 3-5 hour, after material to be mixed melts fully, Metal Melting soup is poured in the mould, after treating its cooling curing, in mould, take out the silver alloys ingot casting.The ingot casting of gained is according to required target size, forge mode and the hot roll extrusion mode more than 80 horsepowers with the 600-800 ton, control its crystallization direction and be no preferred orientations, the grain size number of after heat treatment controlling its microtexture again is about the 20-50 micron, to form alloy target material.
Embodiment 3
The target that embodiment 1 makes is inserted a sputtering chamber.Sputtering chamber's structure as shown in Figure 1; Comprise a direct current power supply unit 100, a ground connection hovel 250, a gas inlet 700, a vacuum pump 600, and the pedestal 400 of putting panel.When carrying out sputter, target 200 is linked to each other with power supply 100 negative electrodes, and the substrate 200 of inserting a flat display apparatus is in sputtering chamber, feed the argon gas of flow 20sccm afterwards, with the dc electric power of 200W, sputtering chamber keeps under the 5mtorr vacuum tightness sputter, and to form a thickness in ten minutes on panel substrate 300 be the ag alloy layer of 21300 .Ag alloy layer is tested through conductance, can get good electrical conductivity, and its electric impedance is 0.0279ohm/ γ, peels off experiment peeling test, the checking that can get its good tack through 85H/85 ℃ of hot and humid experiment with adhesive tape.
Embodiment 4
The target that embodiment 1 makes is inserted a sputtering chamber, and insert a flat display apparatus substrate in sputtering chamber, afterwards in the argon gas that feeds flow 20sccm, with the dc electric power of 100W, sputtering chamber keeps under the 5mtorr vacuum tightness sputter, and to form a thickness in 6.3 minutes on panel substrate be the ag alloy layer of 4000 .Ag alloy layer is tested through conductance, can get good electrical conductivity, and its electric impedance is 0.076ohm/, carries out the checking that stripping test (peelingtest) can get tack well through 85H/85 ° of hot and humid experiment with adhesive tape.
The present invention makes for the first time and is fit to sputter in the silver alloys target of substrate, successfully to form the silver alloys settled layer of tool 80% above content in display panel substrate, the etching solution that therefore can further cooperate silver alloys is with the conductor wire of finishing silver alloys on the substrate or the formation of additional conductive line chart sample, specializing the substrate of silver alloys conduction mould layer, and can further finish the substrate of tool silver alloys conductor wire.The silver alloys target that the present invention makes, but go for the substrate of any sputter thin layer, as semiconductor substrate, the organic electroluminescence display device substrate, liquid crystal display base board is even any plane display base plate is all applicable.
Claims (18)
1. the alloy target material that organic electroluminescence display device conductive film electrode is used is to comprise that silver (Ag), copper (Cu) and at least a noble metal are selected from by palladium (Pd), the cohort that gold (Au) and platinum (Pt) constitute; It is characterized in that,
Wherein silver content is 80 to 99.8 atomic percents;
Copper content is 0.1 to 10 atomic percent;
Noble metal content is 0.1 to 10 atomic percent;
And the total atom per-cent of alloy target material alloy is 100.
2. alloy target material as claimed in claim 1 is characterized in that, wherein noble metal is a palladium.
3. alloy target material as claimed in claim 1 is characterized in that, wherein noble metal is a gold.
4. alloy target material as claimed in claim 1 is characterized in that, wherein noble metal is a platinum.
5. alloy target material as claimed in claim 1 is characterized in that, it more comprises at least one erosion resistance metal, and wherein the erosion resistance metal is titanium, aluminium, nickel, cobalt or chromium.
6. alloy target material as claimed in claim 1 is characterized in that, wherein the erosion resistance metal is a titanium; And its titanium content is 0.01 to 5 atomic percent.
7. alloy target material as claimed in claim 1 is characterized in that, wherein the erosion resistance metal is a nickel; And its nickel content is 0.01 to 5 atomic percent.
8. alloy target material as claimed in claim 1 is characterized in that, wherein the erosion resistance metal is an aluminium; And its aluminium content is 0.01 to 5 atomic percent.
9. alloy target material as claimed in claim 1 is characterized in that, wherein the erosion resistance metal is a cobalt; And its cobalt contents is 0.01 to 5 atomic percent.
10. alloy target material as claimed in claim 1 is characterized in that, wherein the erosion resistance metal is a chromium; And its chromium content is 0.01 to 5 atomic percent.
11. alloy target material as claimed in claim 1 is characterized in that, it is the sputter that is used to form plane display substrate electrode or lead.
12. the manufacture method of an organic electroluminescence display device conductive film alloy for electrode target is to comprise following step:
(A) with silver, the powder composition of copper and at least a noble metal evenly grinds and mixes the back and produces mother alloy with arc-melting, and wherein silver content is 80 to 99.8 atomic percents; Copper content is 0.1 to 10 atomic percent; Noble metal content is 0.1 to 10 atomic percent; And noble metal is at least a being selected from by palladium, the metal of the cohort that gold and platinum constitute;
(B) silver is mixed with the mother alloy of before having made, place crucible, carry out vacuum melting, make ingot casting; And
(C) ingot casting is forged, hot machinings such as hot roll extrusion, thermal treatment, to form alloy target material.
13. manufacture method as claimed in claim 11 is characterized in that, wherein the metal mother alloy of step (A) more comprises at least one erosion resistance metal-powder, and wherein the erosion resistance metal is titanium, aluminium, nickel, cobalt or chromium.
14. manufacture method as claimed in claim 13 is characterized in that, wherein the erosion resistance metal of step (A) is a titanium; And its titanium in the metal mother alloy, content are 0.01 to 5 atomic percent.
15. manufacture method as claimed in claim 12 is characterized in that, wherein the erosion resistance metal of step (A) is a nickel; And the nickel content in the metal mother alloy is 0.01 to 5 atomic percent.
16. manufacture method as claimed in claim 12 is characterized in that, wherein the erosion resistance metal of step (A) is an aluminium; And its aluminium content is 0.01 to 5 atomic percent in the metal mother alloy.
17. manufacture method as claimed in claim 12 is characterized in that, wherein the erosion resistance metal of step (A) is a cobalt; And its cobalt contents is 0.01 to 5 atomic percent in the metal mother alloy.
18. manufacture method as claimed in claim 12 is characterized in that, wherein the erosion resistance metal of step (A) is a chromium; And its chromium content is 0.01 to 5 atomic percent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02132251.1A CN1197990C (en) | 2002-09-03 | 2002-09-03 | Alloy target material for conduction film and its preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02132251.1A CN1197990C (en) | 2002-09-03 | 2002-09-03 | Alloy target material for conduction film and its preparation method |
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| Publication Number | Publication Date |
|---|---|
| CN1480554A true CN1480554A (en) | 2004-03-10 |
| CN1197990C CN1197990C (en) | 2005-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN02132251.1A Expired - Lifetime CN1197990C (en) | 2002-09-03 | 2002-09-03 | Alloy target material for conduction film and its preparation method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100412661C (en) * | 2005-06-07 | 2008-08-20 | 株式会社神户制钢所 | Display device |
| CN100451161C (en) * | 2005-09-07 | 2009-01-14 | 铼宝科技股份有限公司 | Conductive membrane or its protective layer used alloy target material and manufacture thereof |
| CN102021526B (en) * | 2009-09-23 | 2012-10-03 | 中芯国际集成电路制造(上海)有限公司 | Target and method for setting element ratio of target |
| CN105316630A (en) * | 2014-06-04 | 2016-02-10 | 光洋应用材料科技股份有限公司 | Silver alloy target material and its manufacturing method and organic light-emitting diode utilizing silver alloy target material |
| CN106893989A (en) * | 2016-12-29 | 2017-06-27 | 昆山全亚冠环保科技有限公司 | A kind of silver-colored titanium alloy target crack resistence rolling mill practice |
| TWI608108B (en) * | 2014-07-25 | 2017-12-11 | 萬騰榮先進材料德國有限責任公司 | Sputtering target based on a silver alloy |
-
2002
- 2002-09-03 CN CN02132251.1A patent/CN1197990C/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100412661C (en) * | 2005-06-07 | 2008-08-20 | 株式会社神户制钢所 | Display device |
| CN100451161C (en) * | 2005-09-07 | 2009-01-14 | 铼宝科技股份有限公司 | Conductive membrane or its protective layer used alloy target material and manufacture thereof |
| CN102021526B (en) * | 2009-09-23 | 2012-10-03 | 中芯国际集成电路制造(上海)有限公司 | Target and method for setting element ratio of target |
| CN105316630A (en) * | 2014-06-04 | 2016-02-10 | 光洋应用材料科技股份有限公司 | Silver alloy target material and its manufacturing method and organic light-emitting diode utilizing silver alloy target material |
| TWI608108B (en) * | 2014-07-25 | 2017-12-11 | 萬騰榮先進材料德國有限責任公司 | Sputtering target based on a silver alloy |
| CN106893989A (en) * | 2016-12-29 | 2017-06-27 | 昆山全亚冠环保科技有限公司 | A kind of silver-colored titanium alloy target crack resistence rolling mill practice |
| CN106893989B (en) * | 2016-12-29 | 2019-10-01 | 昆山全亚冠环保科技有限公司 | A kind of silver titanium alloy target crack resistence rolling mill practice |
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| Publication number | Publication date |
|---|---|
| CN1197990C (en) | 2005-04-20 |
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