CN102021526B - Target and method for setting element ratio of target - Google Patents
Target and method for setting element ratio of target Download PDFInfo
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- CN102021526B CN102021526B CN200910196207A CN200910196207A CN102021526B CN 102021526 B CN102021526 B CN 102021526B CN 200910196207 A CN200910196207 A CN 200910196207A CN 200910196207 A CN200910196207 A CN 200910196207A CN 102021526 B CN102021526 B CN 102021526B
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Abstract
The invention relates to a target and a method for setting the element ratio of the target. The method for setting the element ratio of the target comprises the following steps of: providing a first target which comprises a first element and a second element; forming a thin film on a substrate by using the first target; measuring the element ratio data of the thin film in different areas of the substrate; and setting the element ratio of a target area corresponding to a substrate area according to the element ratio data of the thin film in the different areas of the substrate so as to form a second target. According to the method for setting the element ratio of the target and the target, the content of noble metal in the target can be reduced, the cost of the target is reduced, and the element uniformity of the thin film formed by the target can be improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly target and setting target elements matching method.
Background technology
Along with unicircuit develops to VLSI, the current densities of IC interior is increasing, and the number of elements that is comprised is also more and more.In SIC; MOS (Metal Oxide Semiconductor; MOS) transistor is one of of paramount importance element wherein; Along with further developing of SIC, the size of semiconductor element also reduces thereupon, and the technology of MOS transistor also has many improvement.
Existing MOS transistor technology is on semiconducter substrate, to form grid structure; In the substrate of the relative both sides of grid structure, form ldd structure (Lightly Doped Drain; LDD), be mask then at grid structure sidewall formation side wall, and with the grid structure that comprises side wall; Carry out ion implantation step, in semiconducter substrate, form source area and drain region.
For the electrical connection that transistorized grid, source electrode and drain electrode is suitable, conventional semiconductor technology can form with the corresponding contact plunger of transistorized grid, source electrode and drain electrode and carry out conducting.Common contact plunger meeting filler metal; Yet conducting is unsatisfactory between the polysilicon of metal and grid structure, source area and drain region or the silicon single crystal; Contact resistance is than higher; In order to improve the contact resistance of contact plunger and grid structure, source area and drain region, can form metal silicide (Silicide) on the surface of grid structure, source area and drain region usually.
Widespread use at present be self-aligned metal silicate (Self-aligned Silicide; Salicide) technology forms metal silicide, is to find more relevant informations about self-aligned silicide technology in 200510106939.7 the one Chinese patent application at for example application number.
Existing metal silicide is selected Titanium silicide or cobalt silicide usually for use; The resistance of existing self-aligned silicide can be along with the live width of semiconducter device or reducing of contact area and increases; And the element of existing self-aligned silicide can diffuse in the substrate; Make that the Siliciumatom crystalline network of source area and drain region is upset, cause the leakage current of source electrode, drain electrode and substrate contact surface easily.
Summary of the invention
The technical problem that the present invention solves is to avoid occurring the leakage phenomenon of source electrode, drain electrode and substrate contact surface.
For addressing the above problem, the present invention provides a kind of setting target elements matching method, comprises the steps: to provide first target, and said first target comprises first element and second element; Adopt said first target on substrate, to form film; Measurement is in the element proportioning data of the said film of substrate different zones; According to the element proportioning data of the said film of said substrate different zones, set the element proportioning in the target zone corresponding with area, form second target.
Optional, the element proportioning of said first target is the element proportioning of homogeneous.
Optional, adopt said second target to be higher than the film that adopts said first target on substrate, to form in the film element proportioning homogeneity that forms on the substrate.
Optional, said target first element is a nickel, said second element is a platinum.
Optional, said measurement specifically comprises in the element proportioning data of the said film of substrate different zones: the center with substrate is that the center of circle is divided at least 2 surveyed areas with substrate surface; In the surveyed area sampling, adopt the element proportioning of ultimate analysis instrument specimen respectively.
Optional; Said measurement specifically comprises in the element proportioning data of the said film of substrate different zones: the center with substrate is that the center of circle is divided into 3 surveyed areas with substrate surface; The central zone of substrate is that diameter is 100 millimeters a circle; Region intermediate is that diameter is 200 millimeters annulus of removing the central zone, and fringe region is the remaining area that substrate is removed central zone and region intermediate; In the surveyed area sampling, adopt the element proportioning of ultimate analysis instrument specimen respectively.
Optional; The element proportioning data of said said film according to said substrate different zones; The element proportioning of setting the target zone corresponding with area specifically comprises: the center with target is that the center of circle is divided into 3 zones with target; The central zone of said target is 150 millimeters ± 10 millimeters a circle; The region intermediate of said target is that diameter is 300 millimeters ± 20 millimeters annulus of removing the central zone, and the fringe region of said target is 450 millimeters ± 30 millimeters annulus of removing central zone and region intermediate; The platinum element percentage of the central zone of said target is 6%, and nickel element per-cent is 94%; The platinum element percentage of the region intermediate of said target is 5%, and nickel element per-cent is 95%; The platinum element percentage of the fringe region of said target is 4.97%, and nickel element per-cent is 95.03%.
The present invention also provides a kind of target, and said target comprises target blank; Said target blank comprises first element and second element; Said target blank comprises multiple zone; The film that the element proportioning in said target blank zone forms according to the target of homogeneous element proportioning is at the element proportioning data setting of substrate different zones.
Optional, said target first element is a nickel, said second element is a platinum.
Optional; Said target blank comprises that multiple zone is that the center of circle is divided into 3 zones with target for the center with target; The central zone of said target is 150 millimeters ± 10 millimeters a circle; The region intermediate of said target is that diameter is 300 millimeters ± 20 millimeters annulus of removing the central zone, and the fringe region of said target is 450 millimeters ± 30 millimeters annulus of removing central zone and region intermediate.
Optional, the platinum element percentage of the central zone of said target is 6%, nickel element per-cent is 94%; The platinum element percentage of the region intermediate of said target is 5%, and nickel element per-cent is 95%; The platinum element percentage of the fringe region of said target is 4.97%, and nickel element per-cent is 95.03%.
Compared with prior art; The present invention has the following advantages: setting target elements matching method provided by the invention and target can reduce the content of noble metal in the target; Reduce the cost of target; And can improve the element homogeneity of the film of target formation, reduce the leakage phenomenon that source electrode, drain electrode and substrate contact surface occur.
Description of drawings
Through the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 is the schematic flow sheet that the present invention sets the target elements matching method.
Embodiment
Contriver of the present invention is through a large amount of experiments; Metallic substance in the discovery metal silicide is chosen with the performance of metal silicide and is contacted directly; Titanium silicide is widely used in the metal silicide of MOS technology more than 0.25 micron the earliest; Its technology is at first to adopt such as methods such as physical sputterings titanium metal is deposited on the wafer; Through 600 degrees centigrade to 700 degrees centigrade the annealing first time, obtain the intermediate phase C49 of high resistant then, and then make C49 be transformed into the low-resistance C54 phase of ultimate demand mutually through 800 degrees centigrade to 900 degrees centigrade the annealing second time; But the resistance of Titanium silicide can be along with live width or reducing of contact area and increases; And along with reducing of live width or contact area, the phase transition process from C49 to the C54 phase can be transformed into a dimensional pattern by original two-dimensional model, and this makes the temperature of phase transformation increase greatly; Transformation temperature improve cause need be higher annealing temperature, and too high annealing temperature can make main diffuse elements silicon diffusion aggravation and cause electric leakage even problem of short-circuit.And along with constantly diminishing of MOS size, the Titanium silicide phase transformation is insufficient and phenomenon that contact resistance is increased also is difficult to avoid.
Contriver of the present invention is through further experiment; Discovery from 0.18 micron to 90 nm technology node; The live width effect does not appear in cobalt silicide under this size condition; But when technology is pushed ahead 45 nanometer nodes and when following, cobalt silicide phase-change nucleation process can receive great restriction, so the live width effect will occur.
Usually select the material of nickel silicide in the prior art for use as metal silicide; Its technology is at first to adopt such as methods such as physical sputterings the nickel metal deposition on the nickel target at wafer; Annealed then technology forms the metal silicide of nickel silicide, and the metal silicide of nickel silicide has advantages such as annealing temperature is low, but when nickel silicide is higher than 700 deg.c can because reunion generates high resistant with phase transformation NiSi2 mutually; Therefore the top temperature to each step in the semiconductor technology has afterwards produced restriction; And in follow-up high-temperature technology, the nickel in the nickel silicide can diffuse to substrate, causes component failure.
For this reason, contriver of the present invention finds in nickel silicide, to mix the high-temperature stability that metal Pt can improve the metal silicide of nickel silicide through a large amount of experiments; But, and, make at the film different positions owing to prepare the circumscribed existence of the homogeneity of membrane equipment because the nickel target of preparation nickel silicide all is to adopt homogeneous element proportioning target usually; Making the element proportioning of film of preparation with target different errors arranged, specifically, is that to prepare the nickel silicide film be example for 5% nickel target with the Pt element percentage; Preparation nickel silicide film on wafer substrates; In the mid-way of substrate, the element percentage of Pt is 3.23% in the nickel silicide film, and at the marginal position of substrate; The element percentage of Pt is 4.25% in the nickel silicide film; Because Pt is lower in the substrate intermediary nickel silicide film, the phenomenon that nickel in the nickel silicide can diffuse to substrate appears in the nickel silicide film of intermediate formation easily, and existing solution is the Pt element percentage content that improves in the target; Because metal Pt costs an arm and a leg, make the expense that drops into increase greatly.
For this reason, contriver of the present invention provides a kind of setting target elements matching method, comprises the steps: to provide first target, and said first target comprises first element and second element; Adopt said first target on substrate, to form film; Measurement is in the element proportioning data of the said film of substrate different zones; According to the element proportioning data of the said film of said substrate different zones, set the element proportioning in the target zone corresponding with area, form second target.
Optional, the element proportioning of said first target is the element proportioning of homogeneous.
Optional, adopt said second target to be higher than the film that adopts said first target on substrate, to form in the film element proportioning homogeneity that forms on the substrate.
Optional, said target first element is a nickel, said second element is a platinum.
Optional, said measurement specifically comprises in the element proportioning data of the said film of substrate different zones: the center with substrate is that the center of circle is divided at least 2 surveyed areas with substrate surface; In the surveyed area sampling, adopt the element proportioning of ultimate analysis instrument specimen respectively.
Optional; Said measurement specifically comprises in the element proportioning data of the said film of substrate different zones: the center with substrate is that the center of circle is divided into 3 surveyed areas with substrate surface; The central zone of substrate is that diameter is 100 millimeters a circle; Region intermediate is that diameter is 200 millimeters annulus of removing the central zone, and fringe region is the remaining area that substrate is removed central zone and region intermediate; In the surveyed area sampling, adopt the element proportioning of ultimate analysis instrument specimen respectively.
Optional; The element proportioning data of said said film according to said substrate different zones; The element proportioning of setting the target zone corresponding with area specifically comprises: the center with target is that the center of circle is divided into 3 zones with target; The central zone of said target is 150 millimeters ± 10 millimeters a circle; The region intermediate of said target is that diameter is 300 millimeters ± 20 millimeters annulus of removing the central zone, and the fringe region of said target is 450 millimeters ± 30 millimeters annulus of removing central zone and region intermediate; The platinum element percentage of the central zone of said target is 6%, and nickel element per-cent is 94%; The platinum element percentage of the region intermediate of said target is 5%, and nickel element per-cent is 95%; The platinum element percentage of the fringe region of said target is 4.97%, and nickel element per-cent is 95.03%.
The present invention also provides a kind of target, and said target comprises target blank; Said target blank comprises first element and second element; Said target blank comprises multiple zone; The film that the element proportioning in said target blank zone forms according to the target of homogeneous element proportioning is at the element proportioning data setting of substrate different zones.
Optional, said target first element is a nickel, said second element is a platinum.
Optional; Said target blank comprises that multiple zone is that the center of circle is divided into 3 zones with target for the center with target; The central zone of said target is 150 millimeters ± 10 millimeters a circle; The region intermediate of said target is that diameter is 300 millimeters ± 20 millimeters annulus of removing the central zone, and the fringe region of said target is 450 millimeters ± 30 millimeters annulus of removing central zone and region intermediate.
Optional, the platinum element percentage of the central zone of said target is 6%, nickel element per-cent is 94%; The platinum element percentage of the region intermediate of said target is 5%, and nickel element per-cent is 95%; The platinum element percentage of the fringe region of said target is 4.97%, and nickel element per-cent is 95.03%.
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes synoptic diagram to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The sectional view of expression device architecture can be disobeyed general ratio and done local the amplification, and said synoptic diagram is instance, and it should not limit the scope of the present invention's protection at this.The three-dimensional space size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 1 describes setting target elements matching method of the present invention below in conjunction with Fig. 1 for the schematic flow sheet that the present invention sets the target elements matching method.
With reference to figure 1, setting target elements matching method of the present invention comprises step:
Step S101 provides first target, and said first target comprises first element and second element.
Said first target is the target of conventional semiconductor thin film deposition, and said target can obtain by buying to supplier, and said first target comprises first element and second element; In the present embodiment, be that the target of homogeneous element proportioning is done exemplary illustrated with said target, said target comprises first element and second element; Said first element is a nickel; Element percentage content is 95%, and said second element is a platinum, and element percentage content is 5%.
What need particularly point out is; Said first target is that the target of homogeneous element proportioning is just done exemplary illustrated; Said first target also can be at the different target of different zones element proportioning; But in actual production, sedimentary first target of semiconductor film is homogeneous element proportioning usually.
Step S102 adopts said first target on substrate, to form film.
Particularly, said first target is mounted on the depositing device, said depositing device can be a Pvd equipment, for example sputtering equipment, pulsed laser deposition equipment or plasma deposition apparatus.
Adopt said equipment on substrate, to form film, said film forming technology can be known deposit film technology.
Step S103 measures the element proportioning data at the said film of substrate different zones.
Can know by narration before,, specifically, understand inconsistent at the marginal position of substrate and the mid-way element proportioning of substrate because the restriction of depositing device and depositing operation forms the problem that film has element proportioning homogeneity on substrate.
Through sampling, the element proportioning of the film of test different zones, we can obtain the element proportioning data of the said film of substrate different zones.
Said sampling method can be that the center of circle is divided at least 2 surveyed areas with substrate surface for the center with substrate; For example can substrate surface be divided into 3 zones, 4 zones, 5 zones ... In the present embodiment; Center with substrate is that the center of circle is divided into 3 surveyed areas with substrate surface; The central zone of substrate is that diameter is 100 millimeters a circle, and region intermediate is that diameter is 200 millimeters annulus of removing the central zone, and fringe region is the remaining area that substrate is removed central zone and region intermediate; In said surveyed area sampling, adopt the element proportioning of ultimate analysis instrument specimen respectively.
Said ultimate analysis instrument can be energy-dispersion X-ray fluorescence spectrometer (Energy DispersiveX-Ray Fluoresence Spectrometer, EDX) or energy dispersive spectrometry (Energy DispersiveSpectrometer, EDS).
In the present embodiment; Center with substrate is that the center of circle is divided into 3 surveyed areas with substrate surface; The central zone of target, the fringe region of target and between the region intermediate of the fringe region of the central zone of target and target, the sample element proportioning of test surveyed area.
Contriver of the present invention finds through a large amount of experiments; With the platinum element percentage is that to prepare the nickel silicide film be example for 5% nickel target; Preparation nickel silicide film on wafer substrates, in the central zone of substrate, the element percentage of platinum is 3.23% in the nickel silicide film; And at the fringe region of substrate, the element percentage of platinum is 4.25% in the nickel silicide film; Between the region intermediate of substrate center zone and fringe region, the element percentage of platinum is 3.70% in the nickel silicide film.Because platinum is lower in the nickel silicide film of central zone; The phenomenon that nickel in the nickel silicide can diffuse to substrate appears in nickel silicide film that the central zone forms easily; And existing solution is the platinum element percentage content that improves in the target; Because costing an arm and a leg of metal platinum makes the expense that drops into increase greatly.
For this reason, contriver of the present invention proposes a kind of method of optimization, and S104 is said like step, according to the element proportioning data of the said film of said substrate different zones, sets the element proportioning in the target zone corresponding with area, forms second target.
In the present embodiment; Contriver of the present invention is that the center of circle is divided into 3 zones with target material surface with the center of target; The central zone of target, region intermediate and fringe region, the central zone of said target, region intermediate and fringe region are corresponding with central zone, region intermediate and the fringe region of substrate successively, are that example is done exemplary illustrated with the substrate of 300 mm dias; Center with substrate is that the center of circle is divided into 3 surveyed areas with substrate surface; The central zone of substrate is that diameter is 100 millimeters a circle, and region intermediate is that diameter is 200 millimeters annulus of removing the central zone, and fringe region is the remaining area that substrate is removed central zone and region intermediate; The central zone of corresponding said target is 150 millimeters ± 10 millimeters a circle; The region intermediate of said target is that diameter is 300 millimeters ± 20 millimeters annulus of removing the central zone, and the fringe region of said target is 450 millimeters ± 30 millimeters annulus of removing central zone and region intermediate.
According to the element proportioning data of the said film of said substrate different zones, set the element proportioning in the second target zone corresponding with area.
In the present embodiment, the platinum element percentage of the central zone of said second target is 6%, and nickel element per-cent is 94%; The platinum element percentage of the region intermediate of said target is 5%, and nickel element per-cent is 95%; The platinum element percentage of the fringe region of said target is 4.97%; Nickel element per-cent is 95.03%; Said second target is mounted on the depositing device; Said depositing device can be a Pvd equipment, for example sputtering equipment, pulsed laser deposition equipment or plasma deposition apparatus, and the film element proportioning homogeneity of formation is higher than the film that adopts said first target on substrate, to form.
According to the target that above-mentioned setting target elements matching method forms, comprising: said target comprises target blank and backboard; Said target blank comprises first element and second element; Said target blank comprises multiple zone; The film that the element proportioning in said target blank zone forms according to the target of homogeneous element proportioning is at the element proportioning data setting of substrate different zones.
In one embodiment; Said target blank comprises platinum element and nickel element; Said target blank comprises the triple zones of central zone, region intermediate and fringe region of target blank; The central zone of wherein said target blank is 150 millimeters ± 10 millimeters a circle, and the region intermediate of said target blank is that diameter is 300 millimeters ± 20 millimeters annulus of removing the central zone, and the fringe region of said target blank is 450 millimeters ± 30 millimeters annulus of removing central zone and region intermediate; The platinum element percentage of the central zone of said target is 6%, and nickel element per-cent is 94%; The platinum element percentage of the region intermediate of said target blank is 5%, and nickel element per-cent is 95%; The platinum element percentage of the fringe region of said target blank is 4.97%, and nickel element per-cent is 95.03%.
Setting target elements matching method provided by the invention and target can reduce the content of noble metal in the target, reduce the cost of target, and can improve the element homogeneity of the film of target formation.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art are not breaking away from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (1)
1. a target is characterized in that, comprising:
Said target comprises target blank;
Said target blank comprises first element and second element, and said target first element is a nickel, and said second element is a platinum;
Said target blank comprises multiple zone; Said target blank comprises that multiple zone is that the center of circle is divided into 3 zones with target for the center with target; The central zone of said target is 150 millimeters ± 10 millimeters a circle; The region intermediate of said target is that diameter is 300 millimeters ± 20 millimeters annulus of removing the central zone, and the fringe region of said target is 450 millimeters ± 30 millimeters annulus of removing central zone and region intermediate;
The platinum element percentage of the central zone of said target is 6%, and nickel element per-cent is 94%; The platinum element percentage of the region intermediate of said target is 5%, and nickel element per-cent is 95%; The platinum element percentage of the fringe region of said target is 4.97%, and nickel element per-cent is 95.03%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910196207A CN102021526B (en) | 2009-09-23 | 2009-09-23 | Target and method for setting element ratio of target |
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| CN200910196207A CN102021526B (en) | 2009-09-23 | 2009-09-23 | Target and method for setting element ratio of target |
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| CN102021526A CN102021526A (en) | 2011-04-20 |
| CN102021526B true CN102021526B (en) | 2012-10-03 |
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| CN112125298A (en) * | 2020-08-20 | 2020-12-25 | 中国科学院宁波材料技术与工程研究所 | Substrate rapid screening method for graphene with vertical structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1182804A (en) * | 1997-09-12 | 1998-05-27 | 冶金工业部钢铁研究总院 | Nickel base deforming alloy target material for sputtering glass plating |
| CN1480554A (en) * | 2002-09-03 | 2004-03-10 | 铼宝科技股份有限公司 | Alloy target material for conduction film and its preparation method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1182804A (en) * | 1997-09-12 | 1998-05-27 | 冶金工业部钢铁研究总院 | Nickel base deforming alloy target material for sputtering glass plating |
| CN1480554A (en) * | 2002-09-03 | 2004-03-10 | 铼宝科技股份有限公司 | Alloy target material for conduction film and its preparation method |
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