USRE43590E1 - Aluminum alloy electrode for semiconductor devices - Google Patents

Aluminum alloy electrode for semiconductor devices Download PDF

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USRE43590E1
USRE43590E1 US11/430,302 US43030206A USRE43590E US RE43590 E1 USRE43590 E1 US RE43590E1 US 43030206 A US43030206 A US 43030206A US RE43590 E USRE43590 E US RE43590E
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electrode
alloy
thin film
semiconductor devices
μωcm
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Seigo Yamamoto
Katsutoshi Takagi
Eiji Iwamura
Kazuo Yoshikawa
Takashi Oonishi
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Kobelco Research Institute Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component

Definitions

  • the present invention relates to an electrode for semiconductor devices, its fabrication method, and a sputtering target for forming an electrode film for semiconductor devices, and particularly to an electrode for semiconductor devices which is suitable for an electrode (interconnections and electrode itself) of an active matrixed liquid crystal display having a thin film transistor, and its fabrication method.
  • a liquid crystal display (hereinafter, referred to as “LCD”) is excellent in thinning, lightening and power-saving compared with conventional displays using a cathode-ray tube, and further it is capable of obtaining a high resolution image. Furthermore, to improve the image quality, there is proposed an LCD with a thin film transistor (hereinafter, referred to as “TFT”) as a switching element.
  • TFT thin film transistor
  • the TFT means an active element composed of a semiconducting film formed on an insulating substrate such as glass, to which an electrode made of a thin metal film (interconnection and electrode itself) is connected.
  • An electrode for semiconductor devices is used as part of a TFT, and the term “electrode” as used herein is intended to refer to both interconnections and the electrode itself. In the TFT, the interconnections and the electrode are electrically connected to each other.
  • an electrode for semiconductor devices used for the LCD mentioned above Various properties are required for an electrode for semiconductor devices used for the LCD mentioned above.
  • the lowering of the resistivity becomes most important for suppressing the delay of a signal.
  • the resistivity (electrical resistance) of an electrode for semiconductor devices is required to be lower than 20 ⁇ cm.
  • Refractory metals such as Ta, Mo, Cr and Ti are used as the electrode materials for LCDs with TFTs (hereinafter referred to as “TFT-LCD”).
  • TFT-LCD Refractory metals
  • the metals have high resistivities in the thin film state; about 180 ⁇ cm (Ta), about 50 ⁇ cm (Mo), about 50 ⁇ cm (Cr), and about 80 ⁇ cm (Ti).
  • the resistivities of all these metals greatly exceeds the value of 20 ⁇ cm. Accordingly, to achieve a larger size and higher resolution of TFT-LCDs, there has been required a new electrode material for semiconductor devices having a low resistivity (lower than 20 ⁇ m).
  • the electrode material for semiconductor devices having a low resistivity may include Au, Cu and Al.
  • Au is difficult to etch, which property is required to form a specified pattern after deposition of the film, that is, electrode film, and it is expensive.
  • Cu is poor in its adhesiveness to substrates and in corrosion resistance. Both metals are not practical.
  • Al is insufficient in thermal stability, and has a disadvantage in generating fine protrusions called hillocks on the surface of an electrode film during a heating process after deposition of the electrode film which is inevitable for the TFT fabrication process. In general, in the TFT-LCD, the electrode film becomes the bottom layer, so that when hillocks are generated, it is impossible to deposit a film thereon.
  • the electrode for semiconductor devices is used not only for the TFT-LCD, but also for the electrode and interconnections of an Si semiconductor represented by a Large Scale Integrated Circuit (hereinafter referred to as “LSI”). Problems in the electrode used for the LSI is the same as that of the TFT-LCD. Accordingly, there has also been required an electrode material for semiconductor devices used for LSIs capable of suppressing the generation of hillocks and reducing the resistivity (lower than 20 ⁇ cm).
  • the goal mentioned above can be achieved by provision of an electrode for semiconductor devices, its fabrication method, and a sputtering target for forming an electrode film for semiconductor devices.
  • an electrode for semiconductor devices is made of an Al alloy containing one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir in a total amount from 0.1 to 10 at %.
  • an electrode for semiconductor devices is made of an Al alloy containing one or more alloying elements selected from rare earth elements in a total amount from 0.05 to 15 at %.
  • an electrode for semiconductor devices according to the first or second embodiments of the invention is formed by a sputtering process.
  • an electrode for semiconductor devices according to the first or second embodiment of the invention is used as an electrode for semiconductor devices in a liquid crystal display.
  • the electric resistance of the Al alloy is adjusted to be lower than 20 ⁇ cm by precipitating part or all of the alloying elements dissolved in the Al matrix as intermetallic compounds.
  • a method of fabricating an electrode for semiconductor devices includes the steps of: depositing an Al alloy film, in which one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir are dissolved in Al matrix, on a substrate; and precipitating part or all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film having an electrical resistivity lower than 20 ⁇ cm is obtained.
  • a method of fabricating an electrode for semiconductor devices includes the steps of: depositing an Al alloy film, in which one or more rare earth elements are dissolved in Al matrix, on a substrate; and precipitating part or all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at a annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film having an electrical resistivity lower than 20 ⁇ cm is obtained.
  • a sputtering target for forming an electrode for semiconductor devices which is used for depositing an Al alloy film on a substrate according to the sixth embodiment of the invention, is made of an Al alloy containing one or more alloying elements selected from Fe, Co, Ru, Rh and Ir.
  • a sputtering target for forming an electrode for semiconductor devices which is used for depositing an Al alloy film on a substrate according to the seventh embodiment of the invention, is made of an Al alloy containing one or more rare earth elements.
  • rare earth elements are intended to include yttrium (Y), as well as the lanthanoid elements.
  • the lanthanoid elements contain elements from La, of atomic number 57, to Lu, of atomic number 71, in the periodic table.
  • FIG. 1 shows the relationship between the content of each alloy element and the resistivity before annealing on Al alloy films for an electrode for semiconductor devices referring to the first example
  • FIG. 2 shows the relationship between the content of each alloy element and the resistivity after annealing on Al alloy films for an electrode for semiconductor devices referring to the first example
  • FIG. 3 shows the relationship between the annealing temperature and the resistivity on Al alloy films for an electrode for semiconductor devices referring to the second example
  • FIG. 4 shows the relationship between the content of each alloy element and the hillock density on Al alloy films for an electrode for semiconductor devices referring to the third example
  • FIG. 5 shows the relationship between the content of each rare earth element and the resistivity on Al alloy films for an electrode for semiconductor devices referring to the fourth example
  • FIG. 6 shows the relationship between the content of each rare earth element and the resistivity on Al alloy films for an electrode for semiconductor devices referring to the fifth example
  • FIG. 7 shows the relationship between the annealing temperature and the resistivity on Al alloy films ⁇ alloying element: Y, La, Nd ⁇ for an electrode for semiconductor devices referring to the sixth example;
  • FIG. 8 shows the relationship between the annealing temperature and the resistivity on Al alloy films ⁇ alloying element: Gd, Tb, Dy ⁇ for an electrode for semiconductor devices referring to the sixth example.
  • FIG. 9 shows the relationship between the annealing temperature and the hillock density on Al alloy films for an electrode for semiconductor devices referring to the seventh example.
  • the present inventors have carried out experiments, in which an Al alloy film was deposited by sputtering using a sputtering target of an Al alloy with various added elements, and the compositions and properties as an electrode film were examined. From these experiments, the present inventors have found the following.
  • An Al alloy film containing one or more elements selected from Fe, Co, Ni, Ru, Rh and Ir (hereinafter, referred to as “Fe, etc.”), or one or more rare earth elements (hereinafter, referred to as “REM”) has excellent thermal stability, and less tendency to generate hillocks during heating after deposition (that is, after formation of an electrode film), and further is reduced in resistivity after the heating process.
  • the above Al alloy film can satisfy the requirements of a high thermal stability (high hillock resistance) and a low resistivity, before and after the heating process (or upon heating).
  • the heating process as the heat treatment, and adjusting the annealing temperature, it becomes possible to obtain an Al alloy film satisfying the above requirements by selecting the most suitable heating condition.
  • the present invention is the result of this knowledge.
  • the film In an Al alloy film containing Fe, etc. or REM, as the contents of Fe, etc., or REM are larger, the film is greatly reinforced by the so-called solid-solution effect of the elements and is thereby improved in thermal stability. As a result, less hillocks on such an Al film are generated during heating after deposition (after formation of electrode film). However, such an Al alloy film having improved thermal stability (high hillock resistance) is simultaneously reduced in resistivity by the so-called solid-solution effect. Namely, the Al alloy film does not satisfy the requirement of specified resistance lower than 20 ⁇ cm.
  • the Al alloy film containing Fe, etc, or REM can satisfy the requirements of a high thermal stability (high hillock resistance) and a low resistivity before and after the annealing, after deposition.
  • the Al alloy film can satisfy each requirement by selecting the most suitable heating condition.
  • the contents of Fe, etc. are required to be in the range from 0.1 to 10 at %.
  • the contents of Fe, etc. are less than 0.1 at %, the Al alloy film is poor in thermal stability because the volume of the elements dissolved in the Al matrix is small, and it is possible to generate hillocks in the annealing.
  • the contents of Fe, etc. are more than 10 at %, it is difficult to satisfy the requirement of specific resistance lower than 20 ⁇ cm because the total volume of the elements dissolved in Al matrix is large, even by adjustment of the total volume of the elements dissolved in the Al matrix after the annealing (adjustment of the annealing temperature).
  • the contents of Fe, etc. are required to be in the range from 0.1 to 10 at %.
  • the resistivity becomes lower than 20 ⁇ cm by the usual heating process after deposition of an electrode film or without heating.
  • the content of Fe, etc. is preferably specified to be in the range from 0.1 to 5 at %.
  • the contents of REM are required to be in the range from 0.05 to 15 at %. The reason for this is the same as the reason described with respect to the contents of Fe, etc.
  • the content of REM is less than 0.05 at %, the Al alloy film may generate hillocks; and when they are more than 15 at %, it is difficult to satisfy the requirement of resistivity lower than 20 ⁇ cm.
  • An electrode for semiconductor devices according to the present invention is made of an Al alloy containing Fe, etc. in the total amount from 0.1 to 10 at %, or REM in the total amount from 0.05 to 15 at %, and therefore, the electrode is less likely to generate hillocks and satisfies the requirement of resistivity lower than 20 ⁇ cm.
  • the electrode for semiconductor devices according to the present invention has such excellent properties, and is suitably used for an electrode for semiconductor devices in LCDs, equivalent to an Al alloy film described in the third embodiment of the invention.
  • An Al alloy used for an electrode for semiconductor devices according to the present invention is desirable to be deposited by sputtering.
  • the reason for this is as follows: Namely, Fe, etc. and REM have extremely small solubility limits in Al in the equilibrium state.
  • Fe, etc. and REM can be dissolved in solid solution by sputtering (by vapor phase rapid quenching). Accordingly, the Al alloy film can be significantly improved in properties such as thermal stability compared with the Al alloy film formed by the other method.
  • the Al alloy of an electrode for semiconductor devices according to the present invention is first deposited by the sputtering mentioned above or the like. At this time (that is, in the intermediate state), all or part of the alloying elements are in the solid-solution state. At the subsequent heating process or after the annealing (final state), part or all of the alloying elements in the solid-solution state are precipitated as intermetallic compounds, so that the electrical resistivity is adjusted to be lower than 20 ⁇ cm, equivalent to an electrode for semiconductor devices described in the fifth embodiment of the invention.
  • the heating process after film deposition (after formation of an electrode film) is positively utilized as the heat treatment for precipitating intermetallic compounds.
  • an Al alloy film containing Fe, etc. or REM is deposited on a substrate in the state that alloying elements (Fe, etc. or REM) are dissolved in an Al matrix.
  • alloying elements Fe, etc. or REM
  • the Al alloy film is more reinforced by the so-called solid-solution effect and is thereby improved in thermal stability, although the resistivity become higher.
  • the heat treatment is applied to the Al alloy film.
  • the elements dissolved in the Al matrix are precipitated as intermetallic compounds and the total volume of the elements in the solid-solution state, which causes an increase in resistivity, is reduced, as a result of which the resistivity is decreased.
  • the Al alloy film can satisfy the requirements of a high thermal stability and a low resistivity (the high thermal stability is a requirement during heating, and the low resistivity is a requirement after heating).
  • a method of fabricating an electrode for semiconductor devices includes the steps of: depositing an Al alloy film, in which Fe, etc. or REM are dissolved in an Al matrix, on a substrate; and precipitating part or all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 ⁇ cm is obtained.
  • This method is an extremely reasonable process capable of satisfying the requirements of a high thermal stability and a low resistivity before and after the heating process (heat treatment).
  • the annealing temperature in the heat treatment is specified to be in the range from 150° to 400° C. When it is less than 150° C., the intermetallic compounds are not precipitated, so that the Al alloy film cannot satisfy the requirement of electric resistance lower than 20 ⁇ cm. When it is more than 400° C., hillocks are generated during annealing.
  • a sputtering target made of an Al alloy containing Fe, etc. or REM Such an Al alloy target has an advantage in stabilizing the composition of the deposited Al alloy film or reducing the oxygen amount compared with a composite target and the like.
  • a binary Al alloy film with a 300 nm thickness was deposited on a glass substrate with a 0.5 mm thickness, by DC magnetron sputtering, using a composite target in which a specified number of ⁇ Fe, Co, Ni, Ru, Rh or Ir (purity: 99.9% for each element) ⁇ chips (5 mm ⁇ 5 mm) were put on a pure Al target (purity: 99,999%), or a vacuum melted Al alloy target containing Fe, etc. in specified amounts.
  • the Al alloy film is used as an interconnection of an electrode for semiconductor devices.
  • the composition of the films thus obtained was analyzed by ICP, and the resistivity thereof was measured at room temperature by four-point probe method.
  • the film was then annealed at 400° C. for 1 hr.
  • the resistivity of the film was similarly measured.
  • the results are summarized in the relationship between amount of Fe, etc. (hereinafter, referred to as “content of alloy element”) and resistivity, which are shown in FIG. 1 (before annealing) and FIG. 2 (after annealing).
  • the resistivity is increased linearly with increasing the content of an alloying element.
  • the resistivity is decreased by the annealing at 400° C., and which is lower than 20 ⁇ cm even when the content of alloying element is increased up to 10 at %.
  • An Al alloy film was formed on a substrate to the same thickness as in Example 1 the same way as in Example 1, using a vacuum melted Al alloy target of Al-10at %Fe.
  • the film was annealed at a temperature range from 100° to 500° C. for 1 hr.
  • the resistivity of this film was measured the same way as in Example 1. The results are summarized in the relationship between the annealing temperature and the resistivity. As is apparent from this figure, the resistivity is decreased when the annealing temperature is higher than 150° C.
  • An Al alloy film containing one or more alloying elements selected from Fe, Co, Ni, Ru, Rh or Ir was formed the same way as Example 1.
  • the film was annealed at 400° C. for 1 hr, and was observed by optical microscopy.
  • the results are summarized in the relationship between the content of an alloying element and the hillock density, which are shown in FIG. 4 .
  • the hillock resistance is significantly improved by the addition of Fe, etc.
  • a binary Al alloy film with a 300 nm thickness was deposited on a glass substrate with a 0.5 mm thickness, by DC magnetron sputtering, using a composite target in which a specified number of (rare earth elements) chips (5 mm ⁇ 5 mm) were put on a pure Al target (purity: 99,999%), or a vacuum melted Al alloy target containing a rare earth element in specified amount.
  • the composition of the film was analyzed and the resistivity thereof was measured the same way as in Example 1. The results are summarized in the relationship between the content of rare earth element in the film and the resistivity, which are shown in FIG. 5 .
  • the resistivity is increased linearly with increasing the content of the rare earth element. However, when the content of the rare earth element is 4 at % or less, the resistivity is lower than 20 ⁇ cm without annealing.
  • Al alloy film with the same composition as in Example 4 was deposited the same way as in Example 4.
  • the composition of the film was analyzed the same way as in Example 1.
  • the film was then annealed at 300° or 500° C. for 1 hr.
  • the resistivity of the film was measured the same way as in Example 1. The results are shown in FIG. 6 .
  • the resistivity is increased linearly with increasing the content of the rare earth element.
  • the increasing rate of the resistivity is 0.1 ⁇ cm/at % for the film which is annealed at 300° C., and 0.5 ⁇ cm/at % for the film which is annealed at 500° C., each of which is significantly small.
  • the resistivity is lower than 20 ⁇ cm even when the content of the rare earth element is 15 at. %
  • Al alloy film with the same thickness as in Example 4 was deposited the same way as in Example 4, using a composite target in which a specified number of ⁇ Y, La, Nd, Gd, Tb or Dy (rare earth element) ⁇ chips (5 mm ⁇ 5 mm) were put on a pure Al target (purity: 99,999%), or a vacuum melted Al alloy target containing a rare earth element in specified amount.
  • the composition of the film was analyzed and the resistivity thereof was measured the same way as in Example 1.
  • the film was then annealed at a temperature range from 150° to 400° C. for 1 hr.
  • the resistivity of the film was similarly measured. The results are summarized in the relationship between the annealing temperature and the resistivity, which are shown in FIG.
  • the resistivity is reduced by annealing at higher than 150° C. compared with that before the annealing. It is revealed that the resistivity is lower than 20 ⁇ cm by the annealing for both films containing a light rare earth element and heavy rare earth element.
  • An Al alloy film with a composition of Al-1.5at %Gd was deposited the same way as in Example 4.
  • the films were patterned with a 10 ⁇ m wide stripe by photolithography.
  • the film was annealed at a temperature range from 200° to 400° C. for 1 hr, and was observed by optical microscopy.
  • the results are summarized in the relationship between the annealing temperature and the hillock density (for each length of 100 ⁇ m in a stripe pattern with a 10 ⁇ m width), which are shown in FIG. 9 .
  • the film has only one or less of the hillock density, even when being annealed at a relatively high temperature of 400° C. As a result, the film is suitable for an electrode for semiconductor devices of LCDs.
  • one of Fe, etc. or REM is added; however, the same effect can be obtained when two or more of Fe, etc. or REM are added.

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Abstract

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.
REEXAMINATION RESULTS
The questions raised in reexamination proceedings Nos. 90/007,822 and 90/007,883, filed Nov. 28, 2005 and Nov. 28, 2005 respectively, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) for ex parte reexaminations, and/or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) for inter partes reexaminations.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an electrode for semiconductor devices, its fabrication method, and a sputtering target for forming an electrode film for semiconductor devices, and particularly to an electrode for semiconductor devices which is suitable for an electrode (interconnections and electrode itself) of an active matrixed liquid crystal display having a thin film transistor, and its fabrication method.
2. Description of the Related Art
A liquid crystal display (hereinafter, referred to as “LCD”) is excellent in thinning, lightening and power-saving compared with conventional displays using a cathode-ray tube, and further it is capable of obtaining a high resolution image. Furthermore, to improve the image quality, there is proposed an LCD with a thin film transistor (hereinafter, referred to as “TFT”) as a switching element. Here, the TFT means an active element composed of a semiconducting film formed on an insulating substrate such as glass, to which an electrode made of a thin metal film (interconnection and electrode itself) is connected. An electrode for semiconductor devices is used as part of a TFT, and the term “electrode” as used herein is intended to refer to both interconnections and the electrode itself. In the TFT, the interconnections and the electrode are electrically connected to each other.
Various properties are required for an electrode for semiconductor devices used for the LCD mentioned above. In the tendency toward larger display size and higher resolution of LCDs, particularly, the lowering of the resistivity becomes most important for suppressing the delay of a signal. For example, in a color LCD with more than 10-inch large display, the resistivity (electrical resistance) of an electrode for semiconductor devices is required to be lower than 20 μΩcm.
Refractory metals such as Ta, Mo, Cr and Ti are used as the electrode materials for LCDs with TFTs (hereinafter referred to as “TFT-LCD”). However, the metals have high resistivities in the thin film state; about 180 μΩcm (Ta), about 50 μΩcm (Mo), about 50 μΩcm (Cr), and about 80 μΩcm (Ti). The resistivities of all these metals greatly exceeds the value of 20 μΩcm. Accordingly, to achieve a larger size and higher resolution of TFT-LCDs, there has been required a new electrode material for semiconductor devices having a low resistivity (lower than 20 μΩm).
The electrode material for semiconductor devices having a low resistivity may include Au, Cu and Al. Au is difficult to etch, which property is required to form a specified pattern after deposition of the film, that is, electrode film, and it is expensive. Cu is poor in its adhesiveness to substrates and in corrosion resistance. Both metals are not practical. On the other hand, Al is insufficient in thermal stability, and has a disadvantage in generating fine protrusions called hillocks on the surface of an electrode film during a heating process after deposition of the electrode film which is inevitable for the TFT fabrication process. In general, in the TFT-LCD, the electrode film becomes the bottom layer, so that when hillocks are generated, it is impossible to deposit a film thereon.
To suppress the generation of hillocks on en Al electrode film, there has been adopted a technique wherein the heating is performed after a high strength film, such as the refractory metals, is deposited on the Al electrode film. However, in this technique, films with different etching properties must be simultaneously etched, so that it becomes difficult to obtain a good interconnection pattern. Accordingly, there has been required an electrode material for semiconductor devices used for TFT-LCDs capable of suppressing the generation of hillocks and reducing the resistivity (lower than 20 μΩcm).
Although the present state (prior art, problem and requirement) of an electrode for semiconductor devices of TFT-LCDs has been described, the electrode for semiconductor devices is used not only for the TFT-LCD, but also for the electrode and interconnections of an Si semiconductor represented by a Large Scale Integrated Circuit (hereinafter referred to as “LSI”). Problems in the electrode used for the LSI is the same as that of the TFT-LCD. Accordingly, there has also been required an electrode material for semiconductor devices used for LSIs capable of suppressing the generation of hillocks and reducing the resistivity (lower than 20 μΩcm).
SUMMARY OF THE INVENTION
A purpose of the present invention is to provide an electrode for semiconductor devices with less tendency to generate hillocks and has a resistivity lower than 20 μΩcm. Another purpose of the present invention is to provide a method of fabricating the electrode for semiconductor devices mentioned above and a sputtering target for forming the electrode film for semiconductor devices.
The goal mentioned above can be achieved by provision of an electrode for semiconductor devices, its fabrication method, and a sputtering target for forming an electrode film for semiconductor devices.
According to one embodiment of the invention, an electrode for semiconductor devices is made of an Al alloy containing one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir in a total amount from 0.1 to 10 at %. According to a second embodiment of the invention, an electrode for semiconductor devices is made of an Al alloy containing one or more alloying elements selected from rare earth elements in a total amount from 0.05 to 15 at %.
According to a third embodiment of the invention, an electrode for semiconductor devices according to the first or second embodiments of the invention is formed by a sputtering process. According to a fourth embodiment of the invention, an electrode for semiconductor devices according to the first or second embodiment of the invention is used as an electrode for semiconductor devices in a liquid crystal display. According to a fifth embodiment of the invention, in an electrode for semiconductor devices according to any of the first four embodiments, the electric resistance of the Al alloy is adjusted to be lower than 20 μΩcm by precipitating part or all of the alloying elements dissolved in the Al matrix as intermetallic compounds.
According to a sixth embodiment of the invention, a method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir are dissolved in Al matrix, on a substrate; and precipitating part or all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film having an electrical resistivity lower than 20 μΩcm is obtained. According to a seventh embodiment of the invention, a method of fabricating an electrode for semiconductor devices includes the steps of: depositing an Al alloy film, in which one or more rare earth elements are dissolved in Al matrix, on a substrate; and precipitating part or all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at a annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film having an electrical resistivity lower than 20 μΩcm is obtained.
According to an eighth embodiment of the invention, a sputtering target for forming an electrode for semiconductor devices, which is used for depositing an Al alloy film on a substrate according to the sixth embodiment of the invention, is made of an Al alloy containing one or more alloying elements selected from Fe, Co, Ru, Rh and Ir.
According to a ninth embodiment of the invention, a sputtering target for forming an electrode for semiconductor devices, which is used for depositing an Al alloy film on a substrate according to the seventh embodiment of the invention, is made of an Al alloy containing one or more rare earth elements.
As used in this application, rare earth elements are intended to include yttrium (Y), as well as the lanthanoid elements. The lanthanoid elements contain elements from La, of atomic number 57, to Lu, of atomic number 71, in the periodic table.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 shows the relationship between the content of each alloy element and the resistivity before annealing on Al alloy films for an electrode for semiconductor devices referring to the first example;
FIG. 2 shows the relationship between the content of each alloy element and the resistivity after annealing on Al alloy films for an electrode for semiconductor devices referring to the first example;
FIG. 3 shows the relationship between the annealing temperature and the resistivity on Al alloy films for an electrode for semiconductor devices referring to the second example;
FIG. 4 shows the relationship between the content of each alloy element and the hillock density on Al alloy films for an electrode for semiconductor devices referring to the third example;
FIG. 5 shows the relationship between the content of each rare earth element and the resistivity on Al alloy films for an electrode for semiconductor devices referring to the fourth example;
FIG. 6 shows the relationship between the content of each rare earth element and the resistivity on Al alloy films for an electrode for semiconductor devices referring to the fifth example;
FIG. 7 shows the relationship between the annealing temperature and the resistivity on Al alloy films {alloying element: Y, La, Nd} for an electrode for semiconductor devices referring to the sixth example;
FIG. 8 shows the relationship between the annealing temperature and the resistivity on Al alloy films {alloying element: Gd, Tb, Dy} for an electrode for semiconductor devices referring to the sixth example; and
FIG. 9 shows the relationship between the annealing temperature and the hillock density on Al alloy films for an electrode for semiconductor devices referring to the seventh example.
 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The present inventors have carried out experiments, in which an Al alloy film was deposited by sputtering using a sputtering target of an Al alloy with various added elements, and the compositions and properties as an electrode film were examined. From these experiments, the present inventors have found the following. An Al alloy film containing one or more elements selected from Fe, Co, Ni, Ru, Rh and Ir (hereinafter, referred to as “Fe, etc.”), or one or more rare earth elements (hereinafter, referred to as “REM”) has excellent thermal stability, and less tendency to generate hillocks during heating after deposition (that is, after formation of an electrode film), and further is reduced in resistivity after the heating process. Consequently, the above Al alloy film can satisfy the requirements of a high thermal stability (high hillock resistance) and a low resistivity, before and after the heating process (or upon heating). In particular, by positively utilizing the heating process as the heat treatment, and adjusting the annealing temperature, it becomes possible to obtain an Al alloy film satisfying the above requirements by selecting the most suitable heating condition. The present invention is the result of this knowledge.
In an Al alloy film containing Fe, etc. or REM, as the contents of Fe, etc., or REM are larger, the film is greatly reinforced by the so-called solid-solution effect of the elements and is thereby improved in thermal stability. As a result, less hillocks on such an Al film are generated during heating after deposition (after formation of electrode film). However, such an Al alloy film having improved thermal stability (high hillock resistance) is simultaneously reduced in resistivity by the so-called solid-solution effect. Namely, the Al alloy film does not satisfy the requirement of specified resistance lower than 20 μΩcm.
However, by annealing the Al alloy film, elements (Fe, etc. or REM) dissolved in an Al matrix are precipitated as intermetallic compounds, so that the total volume of the elements in solid-solution, which causes an increase in resistivity, is reduced, as a result of which the resistivity becomes lower than 20 μΩcm. Therefore, the Al alloy film containing Fe, etc, or REM can satisfy the requirements of a high thermal stability (high hillock resistance) and a low resistivity before and after the annealing, after deposition. In particular, by utilizing the annealing as the heat treatment for positively precipitating intermetallic compounds, and adjusting the total volume of the elements dissolved in the Al matrix after the heat-treatment through adjustment of the annealing temperature, the Al alloy film can satisfy each requirement by selecting the most suitable heating condition.
The contents of Fe, etc. are required to be in the range from 0.1 to 10 at %. When the contents of Fe, etc. are less than 0.1 at %, the Al alloy film is poor in thermal stability because the volume of the elements dissolved in the Al matrix is small, and it is possible to generate hillocks in the annealing. When the contents of Fe, etc. are more than 10 at %, it is difficult to satisfy the requirement of specific resistance lower than 20 μΩcm because the total volume of the elements dissolved in Al matrix is large, even by adjustment of the total volume of the elements dissolved in the Al matrix after the annealing (adjustment of the annealing temperature). In addition, when the contents of Fe, etc. are 5 at % or less, the resistivity becomes lower than 20 μΩcm by the usual heating process after deposition of an electrode film or without heating. In this regard, the content of Fe, etc. is preferably specified to be in the range from 0.1 to 5 at %. On the other hand, the contents of REM are required to be in the range from 0.05 to 15 at %. The reason for this is the same as the reason described with respect to the contents of Fe, etc. When the content of REM is less than 0.05 at %, the Al alloy film may generate hillocks; and when they are more than 15 at %, it is difficult to satisfy the requirement of resistivity lower than 20 μΩcm.
An electrode for semiconductor devices according to the present invention is made of an Al alloy containing Fe, etc. in the total amount from 0.1 to 10 at %, or REM in the total amount from 0.05 to 15 at %, and therefore, the electrode is less likely to generate hillocks and satisfies the requirement of resistivity lower than 20 μΩcm.
The electrode for semiconductor devices according to the present invention has such excellent properties, and is suitably used for an electrode for semiconductor devices in LCDs, equivalent to an Al alloy film described in the third embodiment of the invention.
An Al alloy used for an electrode for semiconductor devices according to the present invention is desirable to be deposited by sputtering. The reason for this is as follows: Namely, Fe, etc. and REM have extremely small solubility limits in Al in the equilibrium state. However, for Al alloy films deposited by sputtering, equivalent to an electrode for semiconductor devices described in the second embodiment of the invention, Fe, etc. and REM can be dissolved in solid solution by sputtering (by vapor phase rapid quenching). Accordingly, the Al alloy film can be significantly improved in properties such as thermal stability compared with the Al alloy film formed by the other method.
The Al alloy of an electrode for semiconductor devices according to the present invention is first deposited by the sputtering mentioned above or the like. At this time (that is, in the intermediate state), all or part of the alloying elements are in the solid-solution state. At the subsequent heating process or after the annealing (final state), part or all of the alloying elements in the solid-solution state are precipitated as intermetallic compounds, so that the electrical resistivity is adjusted to be lower than 20 μΩcm, equivalent to an electrode for semiconductor devices described in the fifth embodiment of the invention.
On the other hand, in a method of fabricating an electrode for semiconductor devices according to the present invention the heating process after film deposition (after formation of an electrode film) is positively utilized as the heat treatment for precipitating intermetallic compounds. Namely, an Al alloy film containing Fe, etc. or REM is deposited on a substrate in the state that alloying elements (Fe, etc. or REM) are dissolved in an Al matrix. In this case, as the volume of the elements dissolved in the Al matrix becomes larger, the Al alloy film is more reinforced by the so-called solid-solution effect and is thereby improved in thermal stability, although the resistivity become higher. After this film deposition, the heat treatment is applied to the Al alloy film. By this heat treatment, the elements dissolved in the Al matrix are precipitated as intermetallic compounds and the total volume of the elements in the solid-solution state, which causes an increase in resistivity, is reduced, as a result of which the resistivity is decreased. Thus, by positively utilizing the heating process after film deposition, the Al alloy film can satisfy the requirements of a high thermal stability and a low resistivity (the high thermal stability is a requirement during heating, and the low resistivity is a requirement after heating).
Accordingly, a method of fabricating an electrode for semiconductor devices includes the steps of: depositing an Al alloy film, in which Fe, etc. or REM are dissolved in an Al matrix, on a substrate; and precipitating part or all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. This method is an extremely reasonable process capable of satisfying the requirements of a high thermal stability and a low resistivity before and after the heating process (heat treatment).
Here, it may be determined whether or not all of the elements dissolved in the Al matrix should be precipitated as intermetallic compounds in accordance with the volume of the elements dissolved in the Al matrix before annealing and the desired electrical resistivity. Moreover, when it is determined that part of them should be precipitated, the precipitated amount based on the whole volume of the elements dissolved in the Al matrix is similarly determined. The annealing temperature in the heat treatment is specified to be in the range from 150° to 400° C. When it is less than 150° C., the intermetallic compounds are not precipitated, so that the Al alloy film cannot satisfy the requirement of electric resistance lower than 20 μΩcm. When it is more than 400° C., hillocks are generated during annealing.
In the deposition of the Al alloy film mentioned above by sputtering, there may be used a sputtering target made of an Al alloy containing Fe, etc. or REM. Such an Al alloy target has an advantage in stabilizing the composition of the deposited Al alloy film or reducing the oxygen amount compared with a composite target and the like.
The present invention will be more clearly understood by way of examples.
EXAMPLE 1
A binary Al alloy film with a 300 nm thickness was deposited on a glass substrate with a 0.5 mm thickness, by DC magnetron sputtering, using a composite target in which a specified number of {Fe, Co, Ni, Ru, Rh or Ir (purity: 99.9% for each element)} chips (5 mm×5 mm) were put on a pure Al target (purity: 99,999%), or a vacuum melted Al alloy target containing Fe, etc. in specified amounts. The Al alloy film is used as an interconnection of an electrode for semiconductor devices.
The composition of the films thus obtained was analyzed by ICP, and the resistivity thereof was measured at room temperature by four-point probe method. The film was then annealed at 400° C. for 1 hr. The resistivity of the film was similarly measured. The results are summarized in the relationship between amount of Fe, etc. (hereinafter, referred to as “content of alloy element”) and resistivity, which are shown in FIG. 1 (before annealing) and FIG. 2 (after annealing). The resistivity is increased linearly with increasing the content of an alloying element. However, the resistivity is decreased by the annealing at 400° C., and which is lower than 20 μΩcm even when the content of alloying element is increased up to 10 at %.
EXAMPLE 2
An Al alloy film was formed on a substrate to the same thickness as in Example 1 the same way as in Example 1, using a vacuum melted Al alloy target of Al-10at %Fe. The film was annealed at a temperature range from 100° to 500° C. for 1 hr. The resistivity of this film was measured the same way as in Example 1. The results are summarized in the relationship between the annealing temperature and the resistivity. As is apparent from this figure, the resistivity is decreased when the annealing temperature is higher than 150° C.
EXAMPLE 3
An Al alloy film containing one or more alloying elements selected from Fe, Co, Ni, Ru, Rh or Ir was formed the same way as Example 1. The film was annealed at 400° C. for 1 hr, and was observed by optical microscopy. The results are summarized in the relationship between the content of an alloying element and the hillock density, which are shown in FIG. 4. The hillock resistance is significantly improved by the addition of Fe, etc.
EXAMPLE 4
A binary Al alloy film with a 300 nm thickness was deposited on a glass substrate with a 0.5 mm thickness, by DC magnetron sputtering, using a composite target in which a specified number of (rare earth elements) chips (5 mm×5 mm) were put on a pure Al target (purity: 99,999%), or a vacuum melted Al alloy target containing a rare earth element in specified amount. The composition of the film was analyzed and the resistivity thereof was measured the same way as in Example 1. The results are summarized in the relationship between the content of rare earth element in the film and the resistivity, which are shown in FIG. 5. The resistivity is increased linearly with increasing the content of the rare earth element. However, when the content of the rare earth element is 4 at % or less, the resistivity is lower than 20 μΩcm without annealing.
EXAMPLE 5
Al alloy film with the same composition as in Example 4 was deposited the same way as in Example 4. The composition of the film was analyzed the same way as in Example 1. The film was then annealed at 300° or 500° C. for 1 hr. The resistivity of the film was measured the same way as in Example 1. The results are shown in FIG. 6. The resistivity is increased linearly with increasing the content of the rare earth element. The increasing rate of the resistivity is 0.1 μΩcm/at % for the film which is annealed at 300° C., and 0.5 μΩcm/at % for the film which is annealed at 500° C., each of which is significantly small. The resistivity is lower than 20 μΩcm even when the content of the rare earth element is 15 at. %
EXAMPLE 6
Al alloy film with the same thickness as in Example 4 was deposited the same way as in Example 4, using a composite target in which a specified number of {Y, La, Nd, Gd, Tb or Dy (rare earth element)} chips (5 mm×5 mm) were put on a pure Al target (purity: 99,999%), or a vacuum melted Al alloy target containing a rare earth element in specified amount. The composition of the film was analyzed and the resistivity thereof was measured the same way as in Example 1. The film was then annealed at a temperature range from 150° to 400° C. for 1 hr. The resistivity of the film was similarly measured. The results are summarized in the relationship between the annealing temperature and the resistivity, which are shown in FIG. 7 (alloying element: Y, La, Nd), and in FIG. 8 (alloying element: Gd, Td, Dy). The resistivity is reduced by annealing at higher than 150° C. compared with that before the annealing. It is revealed that the resistivity is lower than 20 μΩcm by the annealing for both films containing a light rare earth element and heavy rare earth element.
EXAMPLE 7
An Al alloy film with a composition of Al-1.5at %Gd was deposited the same way as in Example 4. The films were patterned with a 10 μm wide stripe by photolithography. The film was annealed at a temperature range from 200° to 400° C. for 1 hr, and was observed by optical microscopy. The results are summarized in the relationship between the annealing temperature and the hillock density (for each length of 100 μm in a stripe pattern with a 10 μm width), which are shown in FIG. 9. The film has only one or less of the hillock density, even when being annealed at a relatively high temperature of 400° C. As a result, the film is suitable for an electrode for semiconductor devices of LCDs.
In the above-described examples, one of Fe, etc. or REM is added; however, the same effect can be obtained when two or more of Fe, etc. or REM are added.

Claims (31)

1. An electrode for semiconductor devices, which is made of an Al alloy consisting essentially of Al and at least one alloying elements selected from the group consisting of rare earth elements, Nd, in a total amount from 0.05 to 15 at %, and, optionally, one or more rare earth elements selected from the group consisting of Gd, Dy, and Y, which is formed of a thin film of said Al alloy deposited by sputtering, wherein a said thin film of said alloy has an electrical resistivity of lower than 20 μΩcm.
2. An electrode for semiconductor devices The electrode according to claim 1, wherein said Al alloy is deposited by sputtering contains intermetallic compounds formed by precipitating part or all of Nd dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
3. An electrode for semiconductor devices The electrode according to claim 1, wherein said electrode is used as an electrode for semiconductor devices in a liquid crystal display thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd, and if present said rare earth elements, dissolved in the Al matrix are precipitated as intermetallic compounds whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
4. An electrode for semiconductor devices The electrode according to any of claim 1, wherein the electrical resistivity of the Al alloy is adjusted to be lower than 20 μΩcm by precipitating part or all of the alloying elements dissolved in the Al as intermetallic compounds said thin film is deposited by sputtering using a target of an Al alloy containing Nd.
5. The electrode of claim 1, wherein the alloying element is at least Y.
6. The electrode of claim 1, wherein the alloying element is at least La.
7. The electrode of claim 1, wherein the alloying element is at least Nd.
8. The electrode of claim 1, wherein the alloying element is at least Tb.
9. The electrode of claim 1, wherein the alloying element is at least Gd.
10. The electrode of claim 1, wherein the alloying element is at least Dy.
11. The electrode of claim 1, wherein the alloying element is at least Pr.
12. The electrode according to claim 1, wherein said electrode is formed of a thin film of said Al alloy deposited by sputtering using a target of an Al alloy containing Nd.
13. The electrode according to claim 1, wherein said Al alloy consists of Al, Nd and one or more rare earth elements selected from the group consisting of Gd, Dy and Y.
14. The electrode according to claim 13, wherein said Al alloy contains intermetallic compounds as formed by precipitating part or all of Nd and said rare earth elements dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
15. The electrode according to claim 13, wherein said thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd and said rare earth elements dissolved in the Al matrix are precipitated as intermetallic compounds, whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
16. The electrode according to claim 1, wherein said Al alloy consists of Al and Nd.
17. The electrode according to claim 16, wherein said Al alloy contains intermetallic compounds as formed by precipitating part or all of Nd dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
18. The electrode according to claim 16, wherein said thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd dissolved in the Al matrix are precipitated as intermetallic compounds, whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
19. The electrode according to claim 1, wherein said electrode is an electrode in a liquid crystal display device.
20. An electrode for semiconductor devices, comprising:
a glass substrate, and
a thin film deposited on said glass substrate by sputtering, and made of an Al alloy consisting of Al, Nd, in a total amount from 0.05 to 15 at %, and, optionally, one or more rare earth elements selected from the group consisting of Gd, Dy, and Y, wherein said thin film has an electrical resistivity of lower than 20 μΩcm.
21. The electrode according to claim 20, wherein said Al alloy contains intermetallic compounds formed by precipitating part or all of Nd dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
22. The electrode according to claim 20, wherein said thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd, and if present said rare earth elements, dissolved in the Al matrix are precipitated as intermetallic compounds, whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
23. The electrode according to claim 20, wherein said thin film is deposited by sputtering using a target of an Al alloy containing Nd.
24. The electrode according to claim 20, wherein said Al alloy consists of Al, Nd, and one or more rare earth elements selected from the group consisting of Gd, Dy and Y.
25. The electrode according to claim 24, wherein said Al alloy contains intermetallic compounds as formed by precipitating part or all of Nd and said rare earth elements dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
26. The electrode according to claim 24, wherein said thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd and said rare earth elements dissolved in the Al matrix are precipitated as intermetallic compounds, whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
27. The electrode according to claim 24, wherein said thin film is deposited by sputtering using a target of an Al alloy containing Nd and one or more rare earth elements selected from a group consisting of Gd, Dy and Y.
28. The electrode according to claim 20, wherein said Al alloy consists of Al and Nd.
29. The electrode according to claim 28, wherein said Al alloy contains intermetallic compounds as formed by precipitating part or all of Nd dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
30. The electrode according to claim 28, wherein said thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd dissolved in the Al matrix are precipitated as intermetallic compounds, whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm.
31. The electrode according to claim 20, wherein said electrode is an electrode in a liquid crystal display device.
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Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2733006B2 (en) 1993-07-27 1998-03-30 株式会社神戸製鋼所 Electrode for semiconductor, method for manufacturing the same, and sputtering target for forming electrode film for semiconductor
JP2727967B2 (en) * 1994-06-30 1998-03-18 株式会社神戸製鋼所 Manufacturing method of active matrix type liquid crystal display
US5691782A (en) * 1994-07-08 1997-11-25 Sanyo Electric Co., Ltd. Liquid-crystal display with inter-line short-circuit preventive function and process for producing same
JP3213196B2 (en) * 1995-03-08 2001-10-02 日本アイ・ビー・エム株式会社 Wiring material, metal wiring layer forming method
EP0731507A1 (en) * 1995-03-08 1996-09-11 International Business Machines Corporation Electrode materials
JP3560393B2 (en) * 1995-07-06 2004-09-02 株式会社日鉱マテリアルズ Manufacturing method of aluminum alloy sputtering target
KR100312548B1 (en) 1995-10-12 2001-12-28 니시무로 타이죠 Sputter target for wiring film, wiring film formation and electronic components using the same
USRE45481E1 (en) 1995-10-12 2015-04-21 Kabushiki Kaisha Toshiba Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same
JP3346217B2 (en) * 1997-04-04 2002-11-18 カシオ計算機株式会社 Wiring forming method and display device manufacturing method
JP3365954B2 (en) * 1997-04-14 2003-01-14 株式会社神戸製鋼所 Al-Ni-Y alloy thin film for semiconductor electrode and sputtering target for forming Al-Ni-Y alloy thin film for semiconductor electrode
JP4197579B2 (en) 1997-12-24 2008-12-17 株式会社東芝 Sputtering target, Al wiring film manufacturing method using the same, and electronic component manufacturing method
TW460599B (en) * 1998-01-14 2001-10-21 Toshiba Corp Method for forming fine wiring pattern
JP4663829B2 (en) * 1998-03-31 2011-04-06 三菱電機株式会社 Thin film transistor and liquid crystal display device using the thin film transistor
KR100421901B1 (en) 1998-12-10 2004-04-17 엘지.필립스 엘시디 주식회사 Reflecting substrate of reflective type liquid crystal display devices
JP3365978B2 (en) 1999-07-15 2003-01-14 株式会社神戸製鋼所 Al alloy thin film for semiconductor device electrode and sputtering target for forming Al alloy thin film for semiconductor device electrode
US6710525B1 (en) * 1999-10-19 2004-03-23 Candescent Technologies Corporation Electrode structure and method for forming electrode structure for a flat panel display
JP3651360B2 (en) * 2000-05-19 2005-05-25 株式会社村田製作所 Method for forming electrode film
JP3878839B2 (en) * 2001-05-31 2007-02-07 チ メイ オプトエレクトロニクス コーポレーション Aluminum wiring layer without hillock and method for forming the same
JP4783525B2 (en) 2001-08-31 2011-09-28 株式会社アルバック Thin film aluminum alloy and sputtering target for forming thin film aluminum alloy
JP3953330B2 (en) * 2002-01-25 2007-08-08 三洋電機株式会社 Display device
US7022384B2 (en) * 2002-01-25 2006-04-04 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Reflective film, reflection type liquid crystal display, and sputtering target for forming the reflective film
JP3940385B2 (en) * 2002-12-19 2007-07-04 株式会社神戸製鋼所 Display device and manufacturing method thereof
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US7166921B2 (en) 2003-11-20 2007-01-23 Hitachi Metals, Ltd. Aluminum alloy film for wiring and sputter target material for forming the film
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JP4542008B2 (en) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 Display device
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US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
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JP2007226058A (en) * 2006-02-24 2007-09-06 Tosoh Corp Liquid crystal display panel, its manufacturing method, and cu alloy sputtering target
US20090008786A1 (en) * 2006-03-06 2009-01-08 Tosoh Smd, Inc. Sputtering Target
KR20080100358A (en) * 2006-03-06 2008-11-17 토소우 에스엠디, 인크 Electronic device, method of manufacture of same and sputtering target
US8097100B2 (en) * 2006-04-03 2012-01-17 Praxair Technology, Inc. Ternary aluminum alloy films and targets for manufacturing flat panel displays
JP4728170B2 (en) 2006-05-26 2011-07-20 三菱電機株式会社 Semiconductor device and active matrix display device
US7781767B2 (en) 2006-05-31 2010-08-24 Kobe Steel, Ltd. Thin film transistor substrate and display device
JP5234892B2 (en) * 2006-05-31 2013-07-10 株式会社神戸製鋼所 Thin film transistor substrate and display device
JP2008098611A (en) * 2006-09-15 2008-04-24 Kobe Steel Ltd Display device
JP4280277B2 (en) * 2006-09-28 2009-06-17 株式会社神戸製鋼所 Display device manufacturing method
CN101523612B (en) 2006-10-13 2011-07-06 株式会社神户制钢所 Thin film transistor substrate and display device
JP4377906B2 (en) * 2006-11-20 2009-12-02 株式会社コベルコ科研 Al-Ni-La-based Al-based alloy sputtering target and method for producing the same
JP2008127623A (en) * 2006-11-20 2008-06-05 Kobelco Kaken:Kk SPUTTERING TARGET OF Al-BASED ALLOY AND MANUFACTURING METHOD THEREFOR
JP4170367B2 (en) 2006-11-30 2008-10-22 株式会社神戸製鋼所 Al alloy film for display device, display device, and sputtering target
JP4355743B2 (en) * 2006-12-04 2009-11-04 株式会社神戸製鋼所 Cu alloy wiring film, TFT element for flat panel display using the Cu alloy wiring film, and Cu alloy sputtering target for producing the Cu alloy wiring film
JP4705062B2 (en) * 2007-03-01 2011-06-22 株式会社神戸製鋼所 Wiring structure and manufacturing method thereof
JP2009004518A (en) * 2007-06-20 2009-01-08 Kobe Steel Ltd Thin film transistor substrate and display device
JP2009010052A (en) * 2007-06-26 2009-01-15 Kobe Steel Ltd Method of manufacturing display device
JP2009008770A (en) 2007-06-26 2009-01-15 Kobe Steel Ltd Laminated structure and method for manufacturing the same
US20090001373A1 (en) * 2007-06-26 2009-01-01 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit
JP5143649B2 (en) * 2007-07-24 2013-02-13 株式会社コベルコ科研 Al-Ni-La-Si-based Al alloy sputtering target and method for producing the same
JP2009076536A (en) 2007-09-19 2009-04-09 Mitsubishi Electric Corp Aluminum alloy film, electronic device, and active matrix substrate for electro-optical display device
JP2008124483A (en) * 2007-12-03 2008-05-29 Kobe Steel Ltd Thin-film transistor substrate, and display device
JP4611417B2 (en) * 2007-12-26 2011-01-12 株式会社神戸製鋼所 Reflective electrode, display device, and display device manufacturing method
JP4469913B2 (en) 2008-01-16 2010-06-02 株式会社神戸製鋼所 Thin film transistor substrate and display device
KR101163329B1 (en) * 2008-02-22 2012-07-05 가부시키가이샤 고베 세이코쇼 Touch panel sensor
JP5139134B2 (en) 2008-03-31 2013-02-06 株式会社コベルコ科研 Al-Ni-La-Cu-based Al-based alloy sputtering target and method for producing the same
US20110008640A1 (en) * 2008-03-31 2011-01-13 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Display device, process for producing the display device, and sputtering target
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Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU598458A1 (en) 1976-07-02 1979-07-25 Институт электроники АН Белорусской ССР Method of multilevel metallization of large integrated circuits
US4477793A (en) 1982-06-30 1984-10-16 Fuji Electric Co., Ltd. Zinc oxide non-linear resistor
FR2553611A1 (en) 1983-10-18 1985-04-19 Hitachi Ltd IMAGE FORMING DEVICE, IN PARTICULAR SOLID STATE IMAGE DETECTORS, AND METHOD FOR REDUCING VERTICAL MACULATION OF SAID DEVICE
JPS6161257A (en) 1984-08-31 1986-03-29 Mitsubishi Electric Corp Moving body guide mechanism
US4713216A (en) * 1985-04-27 1987-12-15 Showa Aluminum Kabushiki Kaisha Aluminum alloys having high strength and resistance to stress and corrosion
US4775814A (en) 1986-05-21 1988-10-04 Hitachi, Ltd. Saw device
JPS6413446A (en) 1987-07-08 1989-01-18 Shinku Riko Kk Differential type measurement method for specific heat by alternating current
JPH0113446B2 (en) 1981-04-08 1989-03-06 Sanyo Wood Preserving
US4814053A (en) 1986-04-04 1989-03-21 Seiko Epson Corporation Sputtering target and method of preparing same
JPH01134426A (en) 1987-11-20 1989-05-26 Hitachi Ltd Thin film transistor for driving liquid crystal display
JPH01233737A (en) 1988-03-15 1989-09-19 Hitachi Ltd Integrated circuit device and its manufacture; target for manufacturing wiring film in said device
US4874440A (en) 1986-03-20 1989-10-17 Aluminum Company Of America Superplastic aluminum products and alloys
JPH01289140A (en) 1988-05-16 1989-11-21 Nippon Telegr & Teleph Corp <Ntt> Wiring layer and manufacture thereof and wiring layer forming device
US4941032A (en) 1986-03-03 1990-07-10 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Semiconductor device
JPH02188922A (en) 1989-01-17 1990-07-25 Hitachi Ltd Electronic device and manufacture thereof
JPH02289828A (en) 1989-02-23 1990-11-29 Ricoh Co Ltd Mim element
US5074935A (en) * 1989-07-04 1991-12-24 Tsuyoshi Masumoto Amorphous alloys superior in mechanical strength, corrosion resistance and formability
JPH0456136A (en) 1990-06-22 1992-02-24 Nippon Telegr & Teleph Corp <Ntt> Forming method of thin film for wiring
JPH04192332A (en) 1990-11-22 1992-07-10 Hitachi Ltd Manufacture of thin film wiring and thin film wiring and semiconductor device
US5142390A (en) 1989-02-23 1992-08-25 Ricoh Company, Ltd. MIM element with a doped hard carbon film
EP0521163A1 (en) 1991-01-17 1993-01-07 Ryoka Matthey Corporation Aluminum alloy wiring layer, manufacturing thereof, and aluminum alloy sputtering target
EP0531808A1 (en) 1991-09-09 1993-03-17 Shin-Etsu Chemical Co., Ltd. Improvement in a magneto-optical recording medium
JPH0598026A (en) 1991-10-04 1993-04-20 Toyobo Co Ltd Resin particle
US5229626A (en) 1992-03-27 1993-07-20 Nichia Kagaku Kogyo K.K. Solid-state image converting device with dot-like layer
JPH05335271A (en) 1992-06-03 1993-12-17 Mitsubishi Kasei Corp Sputtering target and manufacture thereof as well as wiring of electronic device
US5284532A (en) 1992-02-18 1994-02-08 Allied Signal Inc. Elevated temperature strength of aluminum based alloys by the addition of rare earth elements
US5296653A (en) 1991-12-09 1994-03-22 Kabushiki Kaisha Toshiba Device having a multi-layered conductor structure
JPH06333926A (en) 1993-05-20 1994-12-02 Kojundo Chem Lab Co Ltd Aluminum alloy wiring material
JPH0745555A (en) 1993-07-27 1995-02-14 Kobe Steel Ltd Semiconductor electrode and manufacturing method thereof as well as semiconductor film forming sputtering target
US5431751A (en) * 1992-02-07 1995-07-11 Toyota Jidosha Kabushiki Kaisha High strength aluminum alloy
US6333267B1 (en) 1994-06-30 2001-12-25 Kabushiki Kaisha Kobe Seiko Sho Method of manufacturing active matrix type liquid crystal display

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157238A (en) * 1979-05-28 1980-12-06 Hitachi Ltd Semiconductor device
FR2555611B1 (en) * 1983-11-25 1986-04-18 Rhone Poulenc Spec Chim PROCESS FOR THE PREPARATION OF ALUMINUM AND RARE EARTH ALLOYS
FR2629683B1 (en) * 1988-04-08 1991-10-31 Roquette Freres FREEZING ADDITION FOR CHOPPED FOOD
JPH02159064A (en) * 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH0521163A (en) * 1991-05-08 1993-01-29 Fuji Electric Co Ltd Organic thin film light emitting element
KR940006186A (en) * 1992-06-03 1994-03-23 에또 다께또시 Sputtering target, wiring method for electronic device and electronic device
JPH09213360A (en) * 1996-02-02 1997-08-15 Toshiba Battery Co Ltd Manufacture of angular battery

Patent Citations (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU598458A1 (en) 1976-07-02 1979-07-25 Институт электроники АН Белорусской ССР Method of multilevel metallization of large integrated circuits
JPH0113446B2 (en) 1981-04-08 1989-03-06 Sanyo Wood Preserving
US4477793A (en) 1982-06-30 1984-10-16 Fuji Electric Co., Ltd. Zinc oxide non-linear resistor
FR2553611A1 (en) 1983-10-18 1985-04-19 Hitachi Ltd IMAGE FORMING DEVICE, IN PARTICULAR SOLID STATE IMAGE DETECTORS, AND METHOD FOR REDUCING VERTICAL MACULATION OF SAID DEVICE
JPS6161257A (en) 1984-08-31 1986-03-29 Mitsubishi Electric Corp Moving body guide mechanism
US4713216A (en) * 1985-04-27 1987-12-15 Showa Aluminum Kabushiki Kaisha Aluminum alloys having high strength and resistance to stress and corrosion
US4941032A (en) 1986-03-03 1990-07-10 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Semiconductor device
US4874440A (en) 1986-03-20 1989-10-17 Aluminum Company Of America Superplastic aluminum products and alloys
US4814053A (en) 1986-04-04 1989-03-21 Seiko Epson Corporation Sputtering target and method of preparing same
US4775814A (en) 1986-05-21 1988-10-04 Hitachi, Ltd. Saw device
JPS6413446A (en) 1987-07-08 1989-01-18 Shinku Riko Kk Differential type measurement method for specific heat by alternating current
JPH01134426A (en) 1987-11-20 1989-05-26 Hitachi Ltd Thin film transistor for driving liquid crystal display
JPH01233737A (en) 1988-03-15 1989-09-19 Hitachi Ltd Integrated circuit device and its manufacture; target for manufacturing wiring film in said device
JPH01289140A (en) 1988-05-16 1989-11-21 Nippon Telegr & Teleph Corp <Ntt> Wiring layer and manufacture thereof and wiring layer forming device
JPH02188922A (en) 1989-01-17 1990-07-25 Hitachi Ltd Electronic device and manufacture thereof
US5142390A (en) 1989-02-23 1992-08-25 Ricoh Company, Ltd. MIM element with a doped hard carbon film
JPH02289828A (en) 1989-02-23 1990-11-29 Ricoh Co Ltd Mim element
US5074935A (en) * 1989-07-04 1991-12-24 Tsuyoshi Masumoto Amorphous alloys superior in mechanical strength, corrosion resistance and formability
JPH0456136A (en) 1990-06-22 1992-02-24 Nippon Telegr & Teleph Corp <Ntt> Forming method of thin film for wiring
JPH04192332A (en) 1990-11-22 1992-07-10 Hitachi Ltd Manufacture of thin film wiring and thin film wiring and semiconductor device
EP0521163A1 (en) 1991-01-17 1993-01-07 Ryoka Matthey Corporation Aluminum alloy wiring layer, manufacturing thereof, and aluminum alloy sputtering target
EP0531808A1 (en) 1991-09-09 1993-03-17 Shin-Etsu Chemical Co., Ltd. Improvement in a magneto-optical recording medium
JPH0598026A (en) 1991-10-04 1993-04-20 Toyobo Co Ltd Resin particle
US5296653A (en) 1991-12-09 1994-03-22 Kabushiki Kaisha Toshiba Device having a multi-layered conductor structure
US5431751A (en) * 1992-02-07 1995-07-11 Toyota Jidosha Kabushiki Kaisha High strength aluminum alloy
US5284532A (en) 1992-02-18 1994-02-08 Allied Signal Inc. Elevated temperature strength of aluminum based alloys by the addition of rare earth elements
US5229626A (en) 1992-03-27 1993-07-20 Nichia Kagaku Kogyo K.K. Solid-state image converting device with dot-like layer
JPH05335271A (en) 1992-06-03 1993-12-17 Mitsubishi Kasei Corp Sputtering target and manufacture thereof as well as wiring of electronic device
JPH06333926A (en) 1993-05-20 1994-12-02 Kojundo Chem Lab Co Ltd Aluminum alloy wiring material
JPH0745555A (en) 1993-07-27 1995-02-14 Kobe Steel Ltd Semiconductor electrode and manufacturing method thereof as well as semiconductor film forming sputtering target
US5514909A (en) 1993-07-27 1996-05-07 Kabushiki Kaisha Kobe Seiko Sho Aluminum alloy electrode for semiconductor devices
JP2733006B2 (en) 1993-07-27 1998-03-30 株式会社神戸製鋼所 Electrode for semiconductor, method for manufacturing the same, and sputtering target for forming electrode film for semiconductor
US6033542A (en) 1993-07-27 2000-03-07 Kabushiki Kaisha Kobe Seiko Sho Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices
US6333267B1 (en) 1994-06-30 2001-12-25 Kabushiki Kaisha Kobe Seiko Sho Method of manufacturing active matrix type liquid crystal display

Non-Patent Citations (30)

* Cited by examiner, † Cited by third party
Title
Abstracts of the Japan Institute of Metals, 1997.
Advisory Action mailed Mar. 2, 2009 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006.
Amendment and Request for Reconsideration filed Feb. 6, 2008 in response to Office Action mailed Aug. 6, 2007 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006.
ASM Handbook, vol. 3 (ASM International 1992), excerpt.
Decision on Appeal mailed Dec. 16, 2010 in co-pending U.S. Patent Control No. 90/007,824 filed Nov. 28, 2005.
Decision on Petition mailed Mar. 1, 2011 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006, and Control No. 90/007,824.
Decision to Merge Reissue Reexamination Proceedings mailed Oct. 13, 2006 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006, and Control No. 90/007,824.
Detailed Request for Ex Parte Reexamination of U.S. Patent No. 6,033,542 filed Nov. 28, 2005 in co-pending U.S. Patent Control No. 90/007,824 filed Nov. 28, 2005.
Examiner's Answer mailed Mar. 17, 2010 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006.
Final Office Action mailed Aug. 15, 2008 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006.
Granting/Denying Request for Ex Parte Reexamination mailed Jan. 20, 2006 in co-pending U.S. Patent Control No. 90/007,824 filed Nov. 28, 2005.
Joshi at al., "Aluminum-Samarium Alloy for Interconnections in Integrated Circuits," Journal of Vacuum Science Technology, vol. A8 (3), May/Jun. 1990, pp. 1480-1483.
Joshi, et al., "Aluminum-Samarium Alloy for Interconnections in Integrated Circuits", J. Vac. Sci. Technology, A vol. 8, No. 3, pp. 1480-1483, 1990.
Koleshko, V.M., et al., "Impurity Effect on Electrodiffusion in Thin Metal Films," Proc. 8th Int Vacuum Cong. 22, Canners, France, vol. 1, 1980, pp. 645-648.
Lee at al., "Synthesis of Al-Y Alloy Films for ULSI Metallization," Springer Proceedings in Physics, vol. 54, Polycrystalline Semiconductors II, 1991, pp. 414-418.
Lee, et al., "Annealing Behavior of AL-Y Alloy Film for Interconnection Conductor in Microelectronic Devices", J. Vac. Sci. Technolongy, B, vol. 9, No. 5, pp. 2542-2547, Sep./Oct. 1991.
Lee, et al., "Syntheses of AL-Y Alloys Films for ULSI Metallization", Springer Proceedings in Physics, vol. 54, pp. 414-418, 1991.
Office Action mailed Aug. 6, 2007 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006.
Onihsi, et al. "Morphology of sputter deposited Al alloy films", Thin Solid Films 340, 1999, 306-316.
Onishi, et al., "Effects of Nd content in Al thin films on hillock formation", J. Vac. Sci. Technol. A 15 (4), Jul./Aug. 1997, 2339-2348.
Petition filed Feb. 22, 2011 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006, and Control No. 90/007,824.
Reply Brief filed May 17, 2010 in response to Examiner's Answer mailed Mar. 17, 2010 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006.
Request for Reconsideration filed Feb. 17, 2009 in response to Final Office Action mailed Aug. 15, 2008 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006.
Request for Rehearing filed Feb. 16, 2011 in response to the Decision of the Board of Patent Appeals and Interferences mailed Dec. 20, 2010 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006.
Supplemental Appeal Brief filed Dec. 23, 2009 in response to Advisory Action mailed Mar. 2, 2009 in co-pending U.S. Appl. No. 11/430,299, filed May 9, 2006.
Takagi, et al, "P2.2-3 Characterization of Al-Nd Alloy Thin Films for Interconnections of TFT-LCDs", Proceedings of the 15th International Display Research Conference, The Society for Information Display (Asia Display '95), 1995, 461-464.
Takayama, S., "Effects of Y or Gd Addition on the Structures and Resistivities of Al Thin Films," J. Vac. Sci. Technol. A 14(4), Jul./Aug. 1996, pp. 2499-2504.
Takayama, S., et al., "Effects of Y or Gd Addition on the Structure of Al Thin Fims," Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, Osaka, 1995, pp. 318-320.
United States Patent and Trademark Office Decision on Request for Rehearing, U.S. Appl. No. 90/007,824, Mail Date Aug. 24, 2011, 7 pgs.
Yamamoto, S., et al., "The Properties of Al-Ta and Al-Ti Alloy Films for Address Lines of TFT-LCDs," Japan Display' 92, Proceedings of the 12th International Display Research Conference, Oct. 12-14, 1992,.

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