JPH02159064A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH02159064A JPH02159064A JP31403688A JP31403688A JPH02159064A JP H02159064 A JPH02159064 A JP H02159064A JP 31403688 A JP31403688 A JP 31403688A JP 31403688 A JP31403688 A JP 31403688A JP H02159064 A JPH02159064 A JP H02159064A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- aluminum
- magnesium
- alumina
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011777 magnesium Substances 0.000 claims abstract description 14
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052788 barium Inorganic materials 0.000 claims abstract description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 3
- 239000011575 calcium Substances 0.000 claims abstract description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 3
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 3
- 239000011591 potassium Substances 0.000 claims abstract description 3
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 3
- 239000011669 selenium Substances 0.000 claims abstract description 3
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 3
- 239000011734 sodium Substances 0.000 claims abstract description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000001312 dry etching Methods 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 239000013077 target material Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- -1 chlorine ions Chemical class 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910017818 Cu—Mg Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
半導体装置の配線材料及びその形成方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to wiring materials for semiconductor devices and methods for forming the same.
従来の技術
従来、電極として、Ａｅ ＝Ｓｉ系の合金を使用した場
合、その洗浄として高濃度硝酸（発煙硝酸）が使用され
ている。Ａ＆は発煙硝酸により、表面にアルミナを形成
し発煙硝酸に対し不動態になる。その時のシリコン基板
の断面図を第３図に示す。３１はシリコン基板、３２は
Ａ＆−Ｓｉ配線、３３はその表面にできたアルミナ層で
ある。BACKGROUND OF THE INVENTION Conventionally, when an Ae=Si alloy is used as an electrode, high concentration nitric acid (fuming nitric acid) is used to clean it. A& forms alumina on the surface due to the fuming nitric acid and becomes passivated to the fuming nitric acid. A cross-sectional view of the silicon substrate at that time is shown in FIG. 31 is a silicon substrate, 32 is an A&-Si wiring, and 33 is an alumina layer formed on the surface thereof.
アルミナ層３により、Ａｅ−３ｉ系の酸洗浄が可能とな
る。The alumina layer 3 enables Ae-3i acid cleaning.
発明が解決しようとする課題
しかしながら上記の洗浄では、Ａｅ−３ｉ−Ｃｕ系、Ａ
ｅ ／Ｗ等の配線を使用した場合、腐食が発生しやすく
なる。この原因として現在次のように考えられている。Problems to be Solved by the Invention However, in the above cleaning, Ae-3i-Cu system, A
If wiring such as e/W is used, corrosion is likely to occur. The reason for this is currently thought to be as follows.
配線をドライエッチ技術により形成するときは塩素系の
ガスを使用するために、配線上に塩素イオンが残ってい
る。この状態で発煙硝酸に漬けると、Ａ［とＣｕ及びＡ
ｅとＷの間のイオン化傾向の差によりＡｅが正電位にな
る。この正電位のｌと塩素イオンは次式のような反応を
行なう。When forming wiring by dry etching technology, chlorine-based gas is used, so chlorine ions remain on the wiring. When immersed in fuming nitric acid in this state, A[, Cu and A
The difference in ionization tendency between e and W causes Ae to have a positive potential. This positive potential l and chlorine ions undergo a reaction as shown in the following equation.
Ａｅ＋４Ｃｅ−→ＡｅＣｆ！ ＜ ＋３ｅさらに、
Ａ（ｌ Ｃ（ｌ ｉ＋３Ｈ２０→Ａｅ （ＯＨ）ｓ＋３
Ｈ”＋ ４Ｃｅという反応が進む。このときのＡｉ！（
ＯＨｈは発煙硝酸に溶けてしまう。このようにして、塩
素イオン、水、異種金属間の電池作用により、配線合金
が発煙硝酸中で侵される。Ae+4Ce-→AeCf! < +3e Furthermore, A(l C(l i+3H20→Ae (OH)s+3
The reaction H” + 4Ce progresses. At this time, Ai! (
OHh dissolves in fuming nitric acid. In this way, the wiring alloy is attacked in fuming nitric acid due to the battery action between chloride ions, water, and dissimilar metals.
課題を解決するための手段
本発明は、アルミニウム配線中、または、配線上にリチ
ウム、カリウム、セシュウム、バリュウム、カルシュウ
ム、ナトリュウム、ランタン、セレン、ベリリュウム、
マグネシュウムのうち小さ（とも１つの元素を形成する
ことを特徴とする半導体装置の製造方法である。Means for Solving the Problems The present invention provides lithium, potassium, cesium, barium, calcium, sodium, lanthanum, selenium, beryllium,
This is a method for manufacturing a semiconductor device, characterized in that one element (both smaller than magnesium) is formed.
作用
上記元素はいずれもアルミニウムよりイオン化傾向が高
（、アルミに対して正電位になる。このため、塩素イオ
ン等による化学反応は、上記元素に対して起こり、ウェ
ハ洗浄中にアルミが腐食することを防ぐ。Action All of the above elements have a higher tendency to ionize than aluminum (and have a positive potential with respect to aluminum. Therefore, chemical reactions such as chlorine ions occur on the above elements, causing corrosion of aluminum during wafer cleaning. prevent.
実施例
第１図に本発明の第１の実施例において作成した半導体
装置の断面を示す。アルミ配線４を作成するためにジル
コン２％、銅０．５％、マグネシウム２％を含むターゲ
ットを作り、スパッタ法を用いてシリコン基板１に推積
した。ここで通常のフォト工程により、ライン及スペー
スがｌｕｍのパターンを形成し、ドライエッチ工程によ
り配線の加工を行なう。この時に、ドライエッチガスと
してＳ ｉ Ｃｅ ４＋Ｃｅ ２を使用しているので、
レジスト内や配線の側面に塩素イオンが付着している。Embodiment FIG. 1 shows a cross section of a semiconductor device manufactured in a first embodiment of the present invention. In order to create the aluminum wiring 4, a target containing 2% zircon, 0.5% copper, and 2% magnesium was prepared and deposited on the silicon substrate 1 using a sputtering method. Here, a pattern with lines and spaces of lum is formed by a normal photo process, and wiring is processed by a dry etching process. At this time, since Si Ce 4 + Ce 2 is used as the dry etch gas,
Chlorine ions are attached to the resist and the sides of the wiring.
このままの状態で放置しておいても、空気中の水分と塩
素イオンおよびアルミが反応し腐食物が形成され素子の
信頼性を落とす。この時でも配線中のマグネシウムが先
に腐食されるためにアルミ自体の構成体には影響が少な
い。しかし、マグネシウムを添加しすぎると配線中にボ
イド、欠損等が発生し、断線信頼性の低下を起すので、
マグネシウムの添加量には最適値がある。発煙硝酸中で
も上記と同様な腐食が発生しアルミの溶は出しによる配
線の欠損が起こる。この場合もマグネシウムが腐食され
、アルミの欠損を防ぐ。Even if left as is, moisture in the air reacts with chlorine ions and aluminum to form corrosive substances, reducing the reliability of the device. Even at this time, since the magnesium in the wiring corrodes first, there is little effect on the aluminum structure itself. However, if too much magnesium is added, voids, defects, etc. will occur in the wiring, resulting in a decrease in disconnection reliability.
There is an optimum value for the amount of magnesium added. Corrosion similar to the above occurs even in fuming nitric acid, resulting in damage to the wiring due to melting of the aluminum. In this case as well, magnesium is corroded and aluminum is prevented from chipping.
第２の実施例における配線の工程断面図を第２図に示す
。FIG. 2 shows a cross-sectional view of the wiring process in the second embodiment.
従来のようにＡｅ−８ｉ２を推積後、マグネシウム、ア
ルミ合金５を約１００Ａ推積し、ドライエッチにより配
線を形成する。第１の実施例において使用したマグネシ
ウムは配線中に均一に分布している必要はなく、アルミ
と電気的に接触さえしていればアルミに対して高電位に
なり、アルミが腐食されるのを防ぐことができる。After estimating Ae-8i2 as in the conventional method, approximately 100 A of magnesium and aluminum alloy 5 is estimated, and wiring is formed by dry etching. The magnesium used in the first embodiment does not need to be uniformly distributed in the wiring; as long as it is in electrical contact with the aluminum, it will have a high potential against the aluminum, preventing the aluminum from being corroded. It can be prevented.
また、マグネシウムアルミ合金５は配線の表面にしか形
成していないので、洗浄時間に応じた膜厚および、合金
中のマグネシウム量は適当に選択することにより、マグ
ネシウム・アルミ合金５のないアルミ配線だけを残すこ
とも可能である。In addition, since the magnesium-aluminum alloy 5 is formed only on the surface of the wiring, by appropriately selecting the film thickness according to the cleaning time and the amount of magnesium in the alloy, only aluminum wiring without the magnesium-aluminum alloy 5 can be formed. It is also possible to leave .
実施例では、マグネシウムしか用いていないが、他の元
素を用いても効果は同じである。In the examples, only magnesium is used, but the same effect can be achieved even if other elements are used.
発明の詳細
な説明したように１本発明によれば、アルミ系の配線に
おいてアルミ腐食による腐食物の形成、アルミ欠損が抑
制され、配線の信頼性を向上させることができ、その実
用的効果は大きい。DETAILED DESCRIPTION OF THE INVENTION As described in detail, 1. According to the present invention, the formation of corrosion substances and aluminum defects due to aluminum corrosion in aluminum-based wiring can be suppressed, and the reliability of the wiring can be improved, and the practical effects thereof are as follows. big.
第１図は本発明における第１の実施例の半導体装置の断
面図、第２図は第２の実施例の配線工程の断面図、第３
図は従来の方法で形成した半導体装置の断面図である。
４−Ａｅ−８１−Ｃｕ−Ｍｇ、５・・・・・・Ａ３Ｍｇ
合金。
代理人の氏名 弁理士 粟野重孝 ほか１名第
図
第
図FIG. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention, FIG. 2 is a sectional view of a wiring process of the second embodiment, and FIG.
The figure is a cross-sectional view of a semiconductor device formed by a conventional method. 4-Ae-81-Cu-Mg, 5...A3Mg
alloy. Name of agent: Patent attorney Shigetaka Awano and one other person
Claims (2)
ウム、セシウム、バリウム、カルシウム、ナトリウム、
ランタン、セレン、ベリリウム、マグネシウムのうちの
少なくとも１つの元素を含むことを特徴とする半導体装
置の製造方法。(1) As aluminum-based wiring materials, lithium, potassium, cesium, barium, calcium, sodium,
A method for manufacturing a semiconductor device, comprising at least one element selected from lanthanum, selenium, beryllium, and magnesium.
料を含むアルミ合金を形成することを特徴とする請求項
１に記載の半導体装置の製造方法。(2) The method for manufacturing a semiconductor device according to claim 1, wherein after estimating the wiring material, an aluminum alloy containing an aluminum-based wiring material is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31403688A JPH02159064A (en) | 1988-12-13 | 1988-12-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31403688A JPH02159064A (en) | 1988-12-13 | 1988-12-13 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02159064A true JPH02159064A (en) | 1990-06-19 |
Family
ID=18048441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31403688A Pending JPH02159064A (en) | 1988-12-13 | 1988-12-13 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02159064A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033542A (en) * | 1993-07-27 | 2000-03-07 | Kabushiki Kaisha Kobe Seiko Sho | Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices |
| US6075278A (en) * | 1997-04-24 | 2000-06-13 | Micron Technology, Inc. | Aluminum based alloy bridge structure and method of forming same |
| US6278188B1 (en) * | 1998-04-24 | 2001-08-21 | Micron Technology, Inc. | Semiconductor constructions comprising aluminum-containing layers |
| US6326287B1 (en) | 1998-09-03 | 2001-12-04 | Seiko Epson Corporation | Semiconductor device and method of fabricating the same |
| US6522010B2 (en) | 1998-06-30 | 2003-02-18 | Micron Technology, Inc. | Semiconductor constructions comprising aluminum-containing layers |
| US8992748B2 (en) | 2006-03-06 | 2015-03-31 | Tosoh Smd, Inc. | Sputtering target |
Citations (7)
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|---|---|---|---|---|
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| JPS5252368A (en) * | 1975-10-24 | 1977-04-27 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5730349A (en) * | 1980-07-01 | 1982-02-18 | Rockwell International Corp | Method of improving ohmic contact between aluminum metallization layers |
| JPS59100565A (en) * | 1982-11-30 | 1984-06-09 | Fujitsu Ltd | Semiconductor device |
| JPS6187366A (en) * | 1984-10-05 | 1986-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
| JPH0239535A (en) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH0291970A (en) * | 1988-09-29 | 1990-03-30 | Toshiba Corp | Aluminum thin-film conductor for wiring |
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1988
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Patent Citations (7)
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|---|---|---|---|---|
| JPS50159259A (en) * | 1974-06-12 | 1975-12-23 | ||
| JPS5252368A (en) * | 1975-10-24 | 1977-04-27 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5730349A (en) * | 1980-07-01 | 1982-02-18 | Rockwell International Corp | Method of improving ohmic contact between aluminum metallization layers |
| JPS59100565A (en) * | 1982-11-30 | 1984-06-09 | Fujitsu Ltd | Semiconductor device |
| JPS6187366A (en) * | 1984-10-05 | 1986-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
| JPH0239535A (en) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH0291970A (en) * | 1988-09-29 | 1990-03-30 | Toshiba Corp | Aluminum thin-film conductor for wiring |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033542A (en) * | 1993-07-27 | 2000-03-07 | Kabushiki Kaisha Kobe Seiko Sho | Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices |
| USRE44239E1 (en) | 1993-07-27 | 2013-05-28 | Kobelco Research Institute, Inc. | Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices |
| US6075278A (en) * | 1997-04-24 | 2000-06-13 | Micron Technology, Inc. | Aluminum based alloy bridge structure and method of forming same |
| US6624519B1 (en) | 1997-04-24 | 2003-09-23 | Micron Technology, Inc. | Aluminum based alloy bridge structure and method of forming same |
| US6278188B1 (en) * | 1998-04-24 | 2001-08-21 | Micron Technology, Inc. | Semiconductor constructions comprising aluminum-containing layers |
| US6339026B1 (en) | 1998-04-24 | 2002-01-15 | Micron Technology, Inc. | Semiconductor processing methods of polishing aluminum-comprising layers |
| US6522010B2 (en) | 1998-06-30 | 2003-02-18 | Micron Technology, Inc. | Semiconductor constructions comprising aluminum-containing layers |
| US6326287B1 (en) | 1998-09-03 | 2001-12-04 | Seiko Epson Corporation | Semiconductor device and method of fabricating the same |
| US8992748B2 (en) | 2006-03-06 | 2015-03-31 | Tosoh Smd, Inc. | Sputtering target |
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