JPH03218015A - Cleaning fluid for semiconductor substrate and manufacture of semiconductor device - Google Patents
Cleaning fluid for semiconductor substrate and manufacture of semiconductor deviceInfo
- Publication number
- JPH03218015A JPH03218015A JP1246690A JP1246690A JPH03218015A JP H03218015 A JPH03218015 A JP H03218015A JP 1246690 A JP1246690 A JP 1246690A JP 1246690 A JP1246690 A JP 1246690A JP H03218015 A JPH03218015 A JP H03218015A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- oxide film
- cleaning
- silicon oxide
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000012530 fluid Substances 0.000 title abstract 3
- 238000005530 etching Methods 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000002253 acid Substances 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 239000007800 oxidant agent Substances 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 230000036632 reaction speed Effects 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 26
- 239000000243 solution Substances 0.000 description 18
- 150000002739 metals Chemical class 0.000 description 17
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 101100084040 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) ppi-1 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
？産業上の利用分野）
本発明は半導体基板の洗浄液及び製造方法に関するもの
で、特に金属汚染の除去に使用されるものである。[Detailed description of the invention] [Object of the invention] ? INDUSTRIAL APPLICATION FIELD The present invention relates to a cleaning solution and manufacturing method for semiconductor substrates, and is particularly used for removing metal contamination.
（従来の技術）
半導体ウエーハの洗浄液としては、目的に応じて様々な
洗浄液が開発されている。金属汚染の除去を目的とした
洗浄液としてはＨ（１−Ｈ２０■系等の洗浄液が用いら
れている。この洗浄液の基本的な洗浄原理は、酸性の液
中で酸化剤の働きを利用して金属をイオン化して溶解す
ることである。(Prior Art) Various cleaning solutions have been developed as cleaning solutions for semiconductor wafers depending on the purpose. Cleaning liquids such as H (1-H20) are used as cleaning liquids for the purpose of removing metal contamination.The basic cleaning principle of this cleaning liquid is to utilize the action of an oxidizing agent in an acidic liquid. The process involves ionizing and dissolving metals.
この洗浄液は、温度が高ければ高いほどイオン化する作
用も大きく金属を溶解しやすくなるため洗浄効果も高く
なる。しかし、酸化物の標準生成自由エネルギーの低い
金属、例えばＡｇ等は、シリコン酸化膜の表−面近傍付
近に取り込まれており、安定した酸化物を形成している
。このように酸化膜の内部に取り込まれた酸化物は、酸
性液中においても容易にイオン化せず、Ｃｕ，Ｆｅ，Ｎ
ｉ等の標準生成自由エネルギーの高い金属と比べると洗
浄効果が低いという問題があった。The higher the temperature of this cleaning liquid, the greater the ionization effect and the easier it is to dissolve metals, resulting in a higher cleaning effect. However, metals with low standard free energy of oxide formation, such as Ag, are incorporated near the surface of the silicon oxide film, forming a stable oxide. The oxides taken into the oxide film in this way are not easily ionized even in acidic liquid, and are found in Cu, Fe, N, etc.
There was a problem that the cleaning effect was low compared to metals with high standard free energy of formation such as i.
（発明が解決しようとする課題）
従来の洗浄方法においては標準生成自由エネルギーが低
く、シリコン酸化膜表面近傍付近に取り込まれていた金
属に対し、洗浄力が低いという問題点があった。本発明
は、あらゆる金属、特に酸化膜の内部に取り込まれた標
準生成自由エネルギーの低い金属をも、効率よくイオン
化し洗浄する洗浄液及び洗浄方法を提供するものである
。(Problems to be Solved by the Invention) Conventional cleaning methods have a problem in that the standard free energy of formation is low and the cleaning power is low for metals taken in near the surface of the silicon oxide film. The present invention provides a cleaning solution and a cleaning method that efficiently ionizes and cleans all metals, especially metals with low standard free energies of formation incorporated into oxide films.
［発明の構成］
（課題を解決するための手段）
上記問題点を解決するために第１の発明は、半導体基板
上のシリコン酸化膜をエッチングするエッチング液と、
このエッチング液のシリコン酸化膜に対するエッチング
速度より酸化反応速度の早い非金属性の酸化剤と金属を
イオン化する強酸とを含む半導体基板の洗浄液を提供す
る。[Structure of the Invention] (Means for Solving the Problems) In order to solve the above problems, a first invention provides an etching solution for etching a silicon oxide film on a semiconductor substrate;
A cleaning solution for a semiconductor substrate is provided that contains a non-metallic oxidizing agent whose oxidation reaction rate is faster than the etching rate of this etching solution for a silicon oxide film, and a strong acid that ionizes metal.
また、第２の発明は、半導体基板上のシリコン酸化膜を
エッチングするエッチング液と、このエッチング液のシ
リコン酸化膜に対するエッチング速度より酸化反応速度
の早い非金属性の酸化剤と、金属をイオン化する強酸を
含む洗浄液を用い、半導体基板を洗浄する工程を有する
半導体装置の製造方法を提供するものであるである。The second invention also provides an etching solution for etching a silicon oxide film on a semiconductor substrate, a non-metallic oxidizing agent having a faster oxidation reaction rate than the etching rate of the etching solution for the silicon oxide film, and a metal ionizing agent. The present invention provides a method for manufacturing a semiconductor device, which includes a step of cleaning a semiconductor substrate using a cleaning liquid containing a strong acid.
（作用）
このように構成された洗浄液において、基本的には強酸
により金属をイオン化することを洗浄の原理としている
。その際、イオン化傾向の小さい金属も効率よくイオン
化するため酸化剤を用いる。(Function) In the cleaning liquid configured as described above, the principle of cleaning is basically to ionize the metal with a strong acid. At this time, an oxidizing agent is used to efficiently ionize even metals with a small tendency to ionize.
さらに、エッチング液によりシリコン酸化膜表面をエッ
チングし、シリコン酸化膜表面近傍付近に存在する金属
をその表面に露出させる。そして、強酸によりこの表面
に露出した金属をイオン化するものである。なお、本発
明における酸化剤は、イオン化傾向の小さい金属をイオ
ン化するための補助のみならず、シリコン膜表面に常に
酸化膜を形成させている役割をも有している点が重要で
ある。すなわちエッチング液のシリコン酸化膜に対する
エッチング速度よりも酸化反応速度の早い非金属性の酸
化剤を用いるため、洗浄後のウエーハ表面は、常にシリ
コン酸化膜が存在していることになる。シリコン酸化膜
がウエーハ表面に存在すべき理由は、ウエーハ表面にＣ
ｕ等の金属が吸着することを防止するためである。シリ
サイドを形成しやすいこれらの金属はウエーノ１が露出
していると、ウエーハに吸着するため、酸化速度をエッ
チング速度より早くすることにより、常にシリコン酸化
膜を存在せしめ、この吸着を防止しているのである。Further, the surface of the silicon oxide film is etched with an etching solution, and the metal present near the surface of the silicon oxide film is exposed on the surface. The metal exposed on the surface is then ionized using a strong acid. It is important that the oxidizing agent in the present invention not only assists in ionizing metals with a low ionization tendency, but also plays the role of constantly forming an oxide film on the surface of the silicon film. That is, since a non-metallic oxidizing agent whose oxidation reaction rate is faster than the etching rate of the etching solution for the silicon oxide film is used, a silicon oxide film is always present on the wafer surface after cleaning. The reason why a silicon oxide film should exist on the wafer surface is that C
This is to prevent metals such as u from being adsorbed. These metals, which tend to form silicide, will be adsorbed to the wafer if the wafer 1 is exposed, so by making the oxidation rate faster than the etching rate, a silicon oxide film is always present to prevent this adsorption. It is.
（実施例） 本発明の実施例を以下に説明する。(Example) Examples of the present invention will be described below.
本実施例において、エッチング液として重量比０．０２
５％以上のフッ酸と、非金属性の酸化剤として０。８
ｐｐＩ１以上２５．０ｐｐｍ以下の濃度範囲のオゾンと
、そして強酸として安全性のあるＰＨ２以下の塩酸、又
は硫酸とを含む洗浄液を用いる。In this example, as the etching solution, the weight ratio was 0.02.
5% or more hydrofluoric acid and 0.8% as a non-metallic oxidizing agent.
A cleaning solution containing ozone with a concentration range of ppI 1 to 25.0 ppm and hydrochloric acid or sulfuric acid with a pH of 2 or less, which is safe as a strong acid, is used.
金属をイオン化できる限界は、酸の濃度と洗浄液の酸化
力に依存し、また金属によっても異なる。The limit to which metals can be ionized depends on the concentration of the acid and the oxidizing power of the cleaning solution, and also differs depending on the metal.
ことにイオン化傾向の小さい金属のイオン化には？力な
酸化力か必要である。半導体製品の製造現場で検出され
る金属、主としてＦｅ，Ｎｉ，ＡΩ，Ｃｕ，Ａｇ，Ｍｇ
，Ｍｎ，Ｐｂ，Ｚｎ，Ｃｏ，Ｍｏ，Ｔｉ等をすべてイオ
ン化するためには、酸の濃度がＰＨ２以下の強酸なら可
能である。また、エッチング液としてフッ酸を用いてい
るが、フッ酸の濃度は、ＳｉＯ２の最表面層をエッチン
グできる濃度が必要である。Especially for the ionization of metals with a small ionization tendency? Strong oxidizing power is required. Metals detected at semiconductor product manufacturing sites, mainly Fe, Ni, AΩ, Cu, Ag, Mg
, Mn, Pb, Zn, Co, Mo, Ti, etc., can all be ionized using a strong acid with a concentration of PH2 or less. Furthermore, although hydrofluoric acid is used as the etching solution, the concentration of the hydrofluoric acid needs to be such that it can etch the outermost surface layer of SiO2.
ＳｉＯ２の原子間距離はＳｉとＯ間で１，６人、ＯとＯ
間で２．６人である。このことから２．６人以上は最低
エッチングする必要がある。ところで、フソ酸によるシ
リコン酸化膜のエッチングは温度依存性が大きいため、
ウエーハ而内、或いはバッチ内で温度が均一になる必要
がある。従って、常温付近で処理することが最も好まし
い。第１図は２２℃におけるＳｉＯ■膜のエッチング量
に対するエッチング時間の依存性を調べた結果である。The interatomic distance of SiO2 is 1.6 people between Si and O, and between O and O
There are 2.6 people between them. From this, at least 2.6 people need to be etched. By the way, etching of silicon oxide film with fusic acid is highly temperature dependent.
The temperature must be uniform within the wafer or batch. Therefore, it is most preferable to process at around room temperature. FIG. 1 shows the results of investigating the dependence of etching time on the etching amount of the SiO2 film at 22°C.
この図から重量比０．０２５％のフツ酸溶液では、２，
５人のエッチング量で飽和している。この結果からフッ
酸は、重量比で０．０２５％以上の濃度が必要である。From this figure, in a hydrofluoric acid solution with a weight ratio of 0.025%, 2,
The amount of etching for five people is saturated. From this result, hydrofluoric acid needs to have a concentration of 0.025% or more by weight.
酸化剤としてオゾンを用いたのは、フッ酸を常温付近で
使用するため、常温付近で十分な酸化力を持ち、非金属
性であり、かつウエーハに悪影響を及ぼさない酸化剤で
あるという要求を満たしているからである。ところで、
洗浄後のウエーハ表而はシリコン酸化膜が存在している
状態が要求される。この理由は前述のように、シリサイ
ドを形成しやすい金属のウエーハ表面への吸着を防止す
るためである。そこで、酸化剤としてのオゾンは金属不
純物をイオン化するのみならずウエーハのシリコンをも
酸化していくため、フッ酸のエッチングよりも早い速度
で酸化する必要がある。上述のフッ酸のエッチング速度
との兼ね合いにより、２２℃において１０分間で２．５
人以上ウエーハを酸化するためには第２図より０．８ｐ
ｐｎ＋のオゾン濃度が必要である。また、オゾンは
０℃・１ａｔｒＡで３８．５ｐｐ１１まで純水に溶解す
ることができるので、２２：Ｃではほぼ２５ｐｐＩＩで
あり、オゾン濃度は０．８ｐｐＩ１から２ ５ ｐｐａ
＋までが有効範囲である。従って、この範囲のオゾン濃
度であればＰＨ２以下の強酸のもとて前記製造現場で検
出される金属に対し十分イオン化できる。オゾンの添加
方法としては、純水に溶解したオゾン水を用いてフッ酸
及び酸と混合しても良く、またフッ酸及び酸に直接オゾ
ンガスを溶解させても良い。また、洗浄前にオゾンを溶
解させなくても、気体のオゾンをパブリングしながら洗
浄しても良く、この場合はオゾンガスが十分ウエーハ全
体に接触すれば良い。上述のごとくフッ酸濃度はオゾン
濃度によってその上限は制約を受けることになるがシリ
コン酸化膜のエッチングが律速となる濃度にすることが
必要である。Ozone was used as an oxidizing agent because hydrofluoric acid is used at around room temperature, so it met the requirements of an oxidizing agent that has sufficient oxidizing power at around room temperature, is non-metallic, and does not adversely affect the wafer. This is because it is fulfilled. by the way,
It is required that a silicon oxide film exists on the wafer surface after cleaning. The reason for this is, as described above, to prevent metals that tend to form silicide from being adsorbed onto the wafer surface. Therefore, since ozone as an oxidizing agent not only ionizes metal impurities but also oxidizes the silicon of the wafer, it is necessary to oxidize at a faster rate than hydrofluoric acid etching. Due to the above-mentioned etching rate of hydrofluoric acid, the etching rate is 2.5 in 10 minutes at 22℃.
In order to oxidize more than one wafer, 0.8p is required from Figure 2.
An ozone concentration of pn+ is required. In addition, ozone can be dissolved in pure water up to 38.5 ppII at 0°C and 1 atrA, so at 22:C it is approximately 25 ppII, and the ozone concentration ranges from 0.8 ppI to 25 ppa.
The valid range is up to +. Therefore, if the ozone concentration is within this range, metals detected at the manufacturing site can be sufficiently ionized using a strong acid with a pH of 2 or less. As a method for adding ozone, ozone water dissolved in pure water may be mixed with hydrofluoric acid and acid, or ozone gas may be directly dissolved in hydrofluoric acid and acid. Moreover, even if ozone is not dissolved before cleaning, cleaning may be performed while bubbling gaseous ozone, and in this case, it is sufficient that the ozone gas sufficiently contacts the entire wafer. As mentioned above, the upper limit of the hydrofluoric acid concentration is limited by the ozone concentration, but it is necessary to set the concentration so that etching of the silicon oxide film is rate-determining.
第３図は、本発明と従来技術との洗浄結果の比較図であ
る。本発明として塩酸の濃度５ ｗ ｔ％、フッ酸の濃
度０．０２５ｗｔ％の混合液にオゾンガスを溶解し、濃
度２ ｐｐｍとした洗浄液を用いてウエーハを２２℃で
１０分間洗浄した。また、従来技術として、塩酸の濃度
５ ｗ ｔ％，過酸化水素水の濃度４．８ｗｔ％の混合
液を用いウエーハを８０℃で１０分間洗浄したものであ
る。このように本発明では、従来洗浄が難しかったｉ等
の金属をも有効に除去できることが確認された。FIG. 3 is a comparison diagram of the cleaning results of the present invention and the prior art. In the present invention, a wafer was cleaned at 22° C. for 10 minutes using a cleaning solution in which ozone gas was dissolved in a mixed solution of hydrochloric acid at a concentration of 5 wt % and hydrofluoric acid at a concentration of 0.025 wt % to a concentration of 2 ppm. Further, as a conventional technique, a wafer is cleaned at 80° C. for 10 minutes using a mixed solution of hydrochloric acid at a concentration of 5 wt % and hydrogen peroxide solution at a concentration of 4.8 wt %. As described above, it has been confirmed that the present invention can effectively remove metals such as i, which were conventionally difficult to clean.
［発明の効果コ
以上に述べてきたように、本発明によれば、標準生成自
由エネルギーが低く、シリコン酸化膜表面近傍付近に取
り込まれた金属を、効率よくイオン化し、洗浄すること
か可能となる。[Effects of the Invention] As described above, according to the present invention, it is possible to efficiently ionize and clean the metal that has a low standard free energy of formation and has been taken in near the surface of the silicon oxide film. Become.
【図面の簡単な説明】
第１図は、重量比０．０２５％と０，０５％のフッ酸溶
液を用いた場合のシリコン酸化膜のエッチング速度を示
した図、第２図は、０．８ｐｐｍと１．５ｐｐｍのオゾ
ン水によるシリコンの酸化速度を示した図、第３図は、
本発明と従来技術との洗浄効果の比較図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing the etching rate of a silicon oxide film when hydrofluoric acid solutions with a weight ratio of 0.025% and 0.05% are used, and FIG. Figure 3 shows the oxidation rate of silicon with 8ppm and 1.5ppm ozonated water.
It is a comparison diagram of the cleaning effect of the present invention and the conventional technology.
Claims (2)
エッチング液と、 このエッチング液の前記シリコン酸化膜に対するエッチ
ング速度より酸化反応速度の早い非金属性の酸化剤と、 金属をイオン化する強酸と を有することを特徴とする半導体基板の洗浄液。(1) An etching solution that etches a silicon oxide film on a semiconductor substrate, a nonmetallic oxidizing agent that has a faster oxidation reaction rate than the etching rate of this etching solution for the silicon oxide film, and a strong acid that ionizes metal. A cleaning liquid for semiconductor substrates characterized by the following.
エッチング液と、このエッチング液の前記シリコン酸化
膜に対するエッチング速度より酸化反応速度の早い非金
属性の酸化剤と、金属をイオン化する強酸とを有する洗
浄液を用いて半導体基板を洗浄することを特徴とする半
導体装置の製造方法。(2) It includes an etching solution that etches the silicon oxide film on the semiconductor substrate, a nonmetallic oxidizing agent whose oxidation reaction rate is faster than the etching rate of the silicon oxide film of this etching solution, and a strong acid that ionizes the metal. A method for manufacturing a semiconductor device, comprising cleaning a semiconductor substrate using a cleaning liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1246690A JP2839615B2 (en) | 1990-01-24 | 1990-01-24 | Cleaning solution for semiconductor substrate and method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1246690A JP2839615B2 (en) | 1990-01-24 | 1990-01-24 | Cleaning solution for semiconductor substrate and method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03218015A true JPH03218015A (en) | 1991-09-25 |
| JP2839615B2 JP2839615B2 (en) | 1998-12-16 |
Family
ID=11806142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1246690A Expired - Lifetime JP2839615B2 (en) | 1990-01-24 | 1990-01-24 | Cleaning solution for semiconductor substrate and method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2839615B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0649168A2 (en) * | 1993-10-19 | 1995-04-19 | Nippon Steel Corporation | A cleaning solution and its use for cleaning silicon semiconductors and silicon oxides |
| EP0701275A2 (en) * | 1994-08-26 | 1996-03-13 | MEMC Electronic Materials, Inc. | Pre-thermal treatment cleaning process |
| EP0731498A2 (en) * | 1995-03-10 | 1996-09-11 | Kabushiki Kaisha Toshiba | Surface processing method and surface processing device for silicone substrates |
| FR2790768A1 (en) * | 1999-03-08 | 2000-09-15 | Commissariat Energie Atomique | COPPER CHEMICAL ATTACK PROCESS FOR MICROELECTRONIC COMPONENTS |
| EP1655769A2 (en) * | 1997-06-06 | 2006-05-10 | Koninklijke Philips Electronics N.V. | Method of cleaning a semiconductor device and cleaning agent for this purpose |
| CN110447088A (en) * | 2017-03-29 | 2019-11-12 | 信越半导体株式会社 | The cleaning method of semiconductor crystal wafer |
-
1990
- 1990-01-24 JP JP1246690A patent/JP2839615B2/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0649168A3 (en) * | 1993-10-19 | 1995-08-16 | Nippon Steel Corp | A cleaning solution and its use for cleaning silicon semiconductors and silicon oxides. |
| EP0649168A2 (en) * | 1993-10-19 | 1995-04-19 | Nippon Steel Corporation | A cleaning solution and its use for cleaning silicon semiconductors and silicon oxides |
| EP0701275A3 (en) * | 1994-08-26 | 1997-05-21 | Memc Electronic Materials | Pre-thermal treatment cleaning process |
| EP0701275A2 (en) * | 1994-08-26 | 1996-03-13 | MEMC Electronic Materials, Inc. | Pre-thermal treatment cleaning process |
| US5868855A (en) * | 1995-03-10 | 1999-02-09 | Kabushki Kaisha Toshiba | Surface processing method and surface processing device for silicon substrates |
| EP0731498A3 (en) * | 1995-03-10 | 1996-11-13 | Toshiba Kk | Surface processing method and surface processing device for silicone substrates |
| EP0731498A2 (en) * | 1995-03-10 | 1996-09-11 | Kabushiki Kaisha Toshiba | Surface processing method and surface processing device for silicone substrates |
| CN1076121C (en) * | 1995-03-10 | 2001-12-12 | 株式会社东芝 | Semiconductor chip surface treatment liquor and treatment method and device using the same |
| EP1655769A2 (en) * | 1997-06-06 | 2006-05-10 | Koninklijke Philips Electronics N.V. | Method of cleaning a semiconductor device and cleaning agent for this purpose |
| EP1655769A3 (en) * | 1997-06-06 | 2006-05-31 | Koninklijke Philips Electronics N.V. | Method of cleaning a semiconductor device and cleaning agent for this purpose |
| FR2790768A1 (en) * | 1999-03-08 | 2000-09-15 | Commissariat Energie Atomique | COPPER CHEMICAL ATTACK PROCESS FOR MICROELECTRONIC COMPONENTS |
| CN110447088A (en) * | 2017-03-29 | 2019-11-12 | 信越半导体株式会社 | The cleaning method of semiconductor crystal wafer |
| CN110447088B (en) * | 2017-03-29 | 2023-03-28 | 信越半导体株式会社 | Method for cleaning semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2839615B2 (en) | 1998-12-16 |
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