JPH01134426A - Thin film transistor for driving liquid crystal display - Google Patents
Thin film transistor for driving liquid crystal displayInfo
- Publication number
- JPH01134426A JPH01134426A JP62292098A JP29209887A JPH01134426A JP H01134426 A JPH01134426 A JP H01134426A JP 62292098 A JP62292098 A JP 62292098A JP 29209887 A JP29209887 A JP 29209887A JP H01134426 A JPH01134426 A JP H01134426A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- liquid crystal
- crystal display
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 18
- 239000010409 thin film Substances 0.000 title claims abstract description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 6
- 229910052742 iron Inorganic materials 0.000 claims abstract description 6
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 6
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 5
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 5
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 3
- 150000003624 transition metals Chemical class 0.000 claims abstract description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract 3
- 239000011777 magnesium Substances 0.000 claims abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910017052 cobalt Inorganic materials 0.000 claims abstract 2
- 239000010941 cobalt Substances 0.000 claims abstract 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000010949 copper Substances 0.000 claims abstract 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract 2
- 239000010408 film Substances 0.000 abstract description 32
- 229910045601 alloy Inorganic materials 0.000 abstract description 9
- 239000000956 alloy Substances 0.000 abstract description 9
- 238000000137 annealing Methods 0.000 abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052748 manganese Inorganic materials 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 239000011572 manganese Substances 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910001252 Pd alloy Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、液晶ディスプレイ駆動用薄膜トランジスタに
係り、特にその配線材料に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film transistor for driving a liquid crystal display, and particularly to a wiring material thereof.
従来の液晶ディスプレイ駆動用薄膜トランジスタは、配
線材料に純アルミニウムまたはアルミニウムーシリコン
合金が使われていた。この種の技術については１例えば
特開昭６１−９３４８８号に述べられている。Conventional thin film transistors for driving liquid crystal displays have used pure aluminum or aluminum-silicon alloy as the wiring material. This type of technique is described in, for example, Japanese Patent Laid-Open No. 61-93488.
従来、液晶ディスプレイ駆動用薄膜トランジスタにおけ
るゲート配線およびデータ配線は、純アルミニウムで形
成されていた。そのため素子を形成する際の熱応力によ
ってヒロックができたり。Conventionally, gate wiring and data wiring in a thin film transistor for driving a liquid crystal display have been formed of pure aluminum. As a result, hillocks can form due to thermal stress during device formation.
エツチングの際に余分が腐食が起こったりしていた。こ
の対策として配線幅を１０μｍ以上に太くし、層間絶縁
膜の厚さも０．５ μｍ以上と厚くする必要があり、各
トランジスタの小型化とディスプレイの大型化に対する
障害になっていた。また信頼性試験でアルミニウム配線
が電気的に腐食を起こす問題があった。Corrosion occurred due to the excess during etching. To counter this, it was necessary to increase the wiring width to 10 μm or more and the thickness of the interlayer insulating film to 0.5 μm or more, which became an obstacle to miniaturizing each transistor and increasing the size of the display. Additionally, there was a problem in which the aluminum wiring was electrically corroded during reliability tests.
本発明の目的は、ＡＱ配線膜の微細加工性を改善し、ヒ
ロックを形成しにくい配線材料を使ってトランジスタ素
子を小型化することによって、液晶部分の面積を広げ表
示画質を向上させるとともに、ディスプレイ面積を大型
化することにある。The purpose of the present invention is to improve the microfabricability of the AQ wiring film and miniaturize the transistor element by using a wiring material that does not easily form hillocks, thereby increasing the area of the liquid crystal part and improving the display quality. The goal is to increase the area.
同時にＡＱ配線膜の腐食性を高め、表示素子の信頼性を
向上させることにある。At the same time, the purpose is to increase the corrosion resistance of the AQ wiring film and improve the reliability of the display element.
上記目的は、配線をＡ Ｑ −Ｐ ｄ 、 Ｍ ｇ 、
Ｌ ｉ 。For the above purpose, the wiring is AQ-Pd, Mg,
Li.
Ｂｅ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｌａ及びＣｅの
１つ以上の合金で形成し、膜形成後、酸素雰囲気中でア
ニールすることにより、達成される。This is achieved by forming the film from an alloy of one or more of Be, Mn, Fe, Co, Ni, Cu, La, and Ce, and annealing in an oxygen atmosphere after film formation.
腐食性を高める合金元素としてＰｄ等をＡＱ配線膜中に
均一に分散させるため、微細加工を容易に行う事ができ
るようになるとともに、腐食性が向上し、素子の信頼性
が改善できる。またＡＱにＰｄ等を添加することによっ
てＡＱ基地の結晶粒径を細かくすることができるため、
ヒロックの発生を抑制することができる。特にＡＱ−Ｐ
ｄ合金配線膜においては、パターニング後、酸素雰囲気
中でアニールする事により、ＡＱ膜表面にＰｄ○を形成
して表面保護絶縁膜あるいは層間絶縁膜との密着性を高
めることができる。その結果、水分の侵入によるＡＱ配
線膜の腐食を防止できる。Since Pd or the like is uniformly dispersed in the AQ wiring film as an alloying element that increases corrosivity, microfabrication can be easily performed, corrosivity is improved, and device reliability can be improved. Also, by adding Pd etc. to AQ, the crystal grain size of the AQ base can be made finer.
The occurrence of hillocks can be suppressed. Especially AQ-P
In the d alloy wiring film, by annealing in an oxygen atmosphere after patterning, Pd◯ can be formed on the surface of the AQ film to improve adhesion with the surface protection insulating film or the interlayer insulating film. As a result, corrosion of the AQ wiring film due to moisture intrusion can be prevented.
ＡＱ合合金におけるＰｄ、Ｍｇ、Ｌｉ、Ｂｅ。Pd, Mg, Li, Be in AQ alloy.
Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｌａ及びＣｅの少なく
とも１つの量は合計で０．００５〜１重量％とすること
が好ましく、特に０．０１〜０．５重量％の範囲が好ま
しい。The total amount of at least one of Mn, Fe, Co, Ni, Cu, La and Ce is preferably from 0.005 to 1% by weight, particularly preferably from 0.01 to 0.5% by weight.
アニール温度は、層間絶縁膜或は半導体膜の形成温度よ
りも高く、ガラスの結晶化温度よりも低い温度範囲とす
ることが好ましい。The annealing temperature is preferably in a temperature range higher than the formation temperature of the interlayer insulating film or semiconductor film and lower than the crystallization temperature of glass.
ＡＱ配線を加工するためのエツチングの際、レジスト剥
離液、あるいは後工程の水洗における腐食が問題になる
が、これを解決するため、ＡｆｉにＰｄ等を添加するこ
とによって腐食性を改善した。During etching to process AQ wiring, corrosion caused by the resist stripping solution or water washing in the post-process becomes a problem, but in order to solve this problem, the corrosivity was improved by adding Pd or the like to Afi.
またＡＱ裏表面発生するヒロックを抑制することができ
るため、配線幅を細くできるとともに、層間絶縁膜、保
護膜を薄くすることが可能となり、ガラス基板上の液晶
表示部分の面積を７０％以上に増すことができ表示画質
を向上させることができる。また、ＡＱ−Ｐｄ合金配線
の壜台、それと表面保護絶縁膜あるいは眉間絶縁膜との
密着性を高めることができ、水分の侵入によるへ〇配線
膜の腐食を防止し、表示素子の信頼性を高くすることが
できるため、画面を５インチ以上に大型化することがで
きる。In addition, since hillocks that occur on the back surface of the AQ can be suppressed, the wiring width can be made thinner, and the interlayer insulating film and protective film can be made thinner, reducing the area of the liquid crystal display portion on the glass substrate to more than 70%. The display image quality can be improved. In addition, it is possible to improve the adhesion between the AQ-Pd alloy wiring bottle base and the surface protection insulating film or the glabella insulating film, preventing corrosion of the wiring film due to moisture intrusion, and improving the reliability of the display element. Since the height can be increased, the screen can be increased to 5 inches or more.
以下、本発明の実施例によって説明する。第１図は液晶
ディスプレイ駆動用薄膜トランジスタの断面構造を示し
ている。第１図において、１はガラス基板、２はゲート
配線、３はデータ配線、４はＩ Ｔ Ｏ（Ｉｎｄｉｕｍ
Ｔｉｎ ０ｘｉｄｅ）透明１素電極、５はゲート絶縁
膜、６は半導体膜、７は素子表面を保護するパッシベー
ション膜、８は液晶、９は表面ＩＴＯ透明電極、１０は
ガラス板で構成されている。このうち２，３の配線はク
ロム又はタングステン等の遷移金属層の上にＡＱ−Ｐｄ
合金を重ねた構造になっており、ケミカル ベーパ デ
ポジション（ＣＶＤ） 、Ｉｔ子ビーム蒸着、スパッタ
法等により厚さ１０００〜５０００人堆積させる。The present invention will be explained below using examples. FIG. 1 shows a cross-sectional structure of a thin film transistor for driving a liquid crystal display. In FIG. 1, 1 is a glass substrate, 2 is a gate wiring, 3 is a data wiring, and 4 is an ITO (Indium
It consists of a transparent element electrode (5), a gate insulating film, 6 a semiconductor film, 7 a passivation film that protects the element surface, 8 a liquid crystal, 9 a surface ITO transparent electrode, and 10 a glass plate. A few of these wirings are made of AQ-Pd on a transition metal layer such as chromium or tungsten.
It has a structure in which alloys are layered, and is deposited to a thickness of 1,000 to 5,000 layers using chemical vapor deposition (CVD), Itron beam evaporation, sputtering, etc.
第２図は第１図の素子を形成する過程でＡＱ配線形成後
の熱処理の有無による素子の耐湿信頼性を温度４０℃、
湿度９５％の条件で評価したものである。ＡＱ−０，３
重量％Ｐｄ合金配線形成後、Ｏ２中でアニールを行った
素子の耐湿信頼性が最も高く、Ｎ２中でアニールを行っ
たものもそれと同等の耐湿信頼性を示す。一方、アニー
ルを行なわなかった素子では時間とともにＡＪ配線の腐
食が起こり不良率が増してゆく。この原因はアニール無
だと絶縁膜とＡＱとの間に隙間ができ、そこに水分が侵
入して電気化学的な腐食が加速され断線するためである
。Figure 2 shows the moisture resistance reliability of the element at a temperature of 40°C and with or without heat treatment after forming the AQ wiring in the process of forming the element shown in Figure 1.
The evaluation was performed under the condition of 95% humidity. AQ-0,3
The device annealed in O2 after forming the wt% Pd alloy wiring has the highest moisture resistance reliability, and the device annealed in N2 also exhibits the same moisture resistance reliability. On the other hand, in devices that have not been annealed, corrosion of the AJ wiring occurs over time and the defective rate increases. The reason for this is that without annealing, a gap is created between the insulating film and the AQ, and moisture enters the gap, accelerating electrochemical corrosion and causing disconnection.
第３図は絶縁膜形成時にＡＱ配線上に形成されるヒロッ
ク密度について、本発明によるＡＱ合金配線と従来の純
ＡＪ配線とを比較し、Ｐｄ添加量を横軸に整理した結果
を示す、ＡｌｌにＰｄを添加することによって配線膜中
の原子移動が抑制され、ヒロック密度が大幅に減少する
。Figure 3 shows the results of comparing the hillock density formed on the AQ wiring during the formation of the insulating film between the AQ alloy wiring according to the present invention and the conventional pure AJ wiring, and arranging the amount of Pd added on the horizontal axis. By adding Pd to the wiring film, the movement of atoms in the wiring film is suppressed, and the hillock density is significantly reduced.
第４図は本発明によりＡＱ配線の信頼性が高まり、配線
幅が細くなった結果、画素面積率が増す効果を示してい
る。第４図から明らかなように。FIG. 4 shows the effect of increasing the pixel area ratio as a result of the present invention increasing the reliability of the AQ wiring and reducing the wiring width. As is clear from Figure 4.
従来のＡＱ−８ｉ合金では１０μｍあった配線幅が、本
発明のＡＱ−Ｐｄ合金では１μｍ以下と細くできるため
、液晶駆動部分の画素面積を大きくとることができる。The wiring width, which was 10 μm in the conventional AQ-8i alloy, can be reduced to 1 μm or less in the AQ-Pd alloy of the present invention, so the pixel area of the liquid crystal driving portion can be increased.
またＰｄを０．０１重量％添加するだけで十分効果があ
り、酸素雰囲気中で２００℃−１０分間のアニールを施
すことによって、より一層の画素面積率向上の効果がみ
られる。Further, adding 0.01% by weight of Pd is sufficient, and by annealing at 200° C. for 10 minutes in an oxygen atmosphere, the effect of further improving the pixel area ratio can be seen.
なお、ゲート配線、およびデータ配線としてＡＱ配線の
ヒロック密度を低減させる添加元素はＰｄが最も効果が
あるが、Ｍｇ、Ｌｉ、Ｂｅ。Note that Pd is the most effective additive element for reducing the hillock density of AQ wiring as gate wiring and data wiring, but Mg, Li, and Be may also be used.
Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｌａ、Ｃｅの少なくと
も１つを添加した場合にも効果がある。第５図にこれら
の元素を添加したＡｆｉ′合金と純ＡＱの絶縁膜形成時
に発生するヒロック密度を示す。It is also effective to add at least one of Mn, Fe, Co, Ni, Cu, La, and Ce. FIG. 5 shows the hillock density that occurs when forming an insulating film of Afi' alloy to which these elements are added and pure AQ.
いずれの合金添加もヒロックの抑制に効果があることが
分かる。It can be seen that addition of any alloy is effective in suppressing hillocks.
本発明によれば、ヒロック密度が低く、耐湿信頼性に優
れ、１μｍ以下の配線に加工できる液晶ディスプレイ用
配線膜が得られる。その結果、液晶ディスプレイ駆動用
薄膜トランジスタ配線を細くでき、液晶ディスプレイの
画素面積率を７０％以上にすることができ、ディスプレ
イ装置の耐湿信頼性を向上させることができる。According to the present invention, a wiring film for a liquid crystal display can be obtained that has a low hillock density, excellent moisture resistance reliability, and can be processed into wiring of 1 μm or less. As a result, the thin film transistor wiring for driving the liquid crystal display can be made thinner, the pixel area ratio of the liquid crystal display can be increased to 70% or more, and the moisture resistance reliability of the display device can be improved.
第１図は本発明の実施例の構造を示した断面図、第２図
はアニールの有無による耐湿信頼性試験結果を示す特性
図、第３図はパラジウムによるヒロック密度の低減効果
を示す特性図、第４−はアニールの有無と画素面積率と
の関係を示す特性図、第５図は各種配線材料とヒロック
密度との関係を示す特性図である。
１・・・ガラス基板、２・・・ゲート配線、３・・・デ
ータ配線、４・・・ＩＴＯ透明画素電極、５・・・ゲー
ト絶縁膜。
６・・・半導体膜、７・・・パッシベーション膜、８・
・・液＄ １ 回
／ −６□２ス縁
２− ケートａｍ
３−−データ両巴脈
６−− 串１ト飼ト咲
７−−ｌザツンベーシタンー屹
１０−一 カ′クス４に
拭ｅ吟ＩｔＱ（幻
ｒａ １，４’−（ＨθFigure 1 is a cross-sectional view showing the structure of an example of the present invention, Figure 2 is a characteristic diagram showing the results of moisture resistance reliability tests with and without annealing, and Figure 3 is a characteristic diagram showing the effect of palladium on reducing hillock density. , 4- is a characteristic diagram showing the relationship between the presence or absence of annealing and the pixel area ratio, and FIG. 5 is a characteristic diagram showing the relationship between various wiring materials and hillock density. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Gate wiring, 3... Data wiring, 4... ITO transparent pixel electrode, 5... Gate insulating film. 6... Semiconductor film, 7... Passivation film, 8.
...liquid $ 1 time / -6 □ 2 s rim 2 - kate am 3 - - data both sides 6 - - skewer 1 to feed tosaki 7 - l zatsumbashitan - 屹 10 - 1 c'ax 4 NiwieginItQ(phantom ra 1,4'-(Hθ
Claims (1)
レイ駆動用薄膜トランジスタにおいて、前記ゲート配線
及びデータ配線の少なくとも一方が遷移金属層上に、パ
ラジウムとマグネシウムとリチウムとベリリウムとマン
ガンと鉄とコバルトとニッケルと銅とランタン及びセリ
ウムの少なくとも１つを合計で０．００５〜１重量％含
み、残部アルミニウムの合金よりなるアルミニウム合金
層を有することを特徴とする液晶ディスプレイ駆動用薄
膜トランジスタ。 ２、特許請求の範囲第１項において、前記アルミニウム
合金層が膜形成後、アニールされていることを特徴とす
る液晶ディスプレイ駆動用薄膜トランジスタ。[Claims] 1. In a thin film transistor for driving a liquid crystal display, which includes a gate wiring and a data wiring, at least one of the gate wiring and the data wiring includes palladium, magnesium, lithium, beryllium, manganese, and iron on a transition metal layer. 1. A thin film transistor for driving a liquid crystal display, comprising an aluminum alloy layer containing a total of 0.005 to 1% by weight of at least one of cobalt, nickel, copper, lanthanum, and cerium, and the balance being aluminum. 2. The thin film transistor for driving a liquid crystal display according to claim 1, wherein the aluminum alloy layer is annealed after being formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62292098A JPH01134426A (en) | 1987-11-20 | 1987-11-20 | Thin film transistor for driving liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62292098A JPH01134426A (en) | 1987-11-20 | 1987-11-20 | Thin film transistor for driving liquid crystal display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01134426A true JPH01134426A (en) | 1989-05-26 |
Family
ID=17777519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62292098A Pending JPH01134426A (en) | 1987-11-20 | 1987-11-20 | Thin film transistor for driving liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01134426A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0425162A2 (en) * | 1989-10-25 | 1991-05-02 | AT&T Corp. | Improved aluminum metallization for semiconductor devices |
| JPH04323872A (en) * | 1991-04-23 | 1992-11-13 | Kobe Steel Ltd | Material for semiconductor device |
| US5296653A (en) * | 1991-12-09 | 1994-03-22 | Kabushiki Kaisha Toshiba | Device having a multi-layered conductor structure |
| JPH0745555A (en) * | 1993-07-27 | 1995-02-14 | Kobe Steel Ltd | Semiconductor electrode and manufacturing method thereof as well as semiconductor film forming sputtering target |
| JPH088256A (en) * | 1994-06-22 | 1996-01-12 | Sony Corp | Wiring structure for semiconductor device and transistor array for display element |
| US5726720A (en) * | 1995-03-06 | 1998-03-10 | Canon Kabushiki Kaisha | Liquid crystal display apparatus in which an insulating layer between the source and substrate is thicker than the insulating layer between the drain and substrate |
| US5830786A (en) * | 1993-02-22 | 1998-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring |
| US5976641A (en) * | 1991-03-07 | 1999-11-02 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| KR100670060B1 (en) * | 2000-04-20 | 2007-01-16 | 삼성전자주식회사 | Manufacturing method of a thin film transistor array panel for a liquid crystal display |
| KR100845705B1 (en) * | 2006-05-31 | 2008-07-10 | 가부시키가이샤 고베 세이코쇼 | Thin film transistor substrate and display device |
| USRE41975E1 (en) | 1995-10-12 | 2010-11-30 | Kabushiki Kaisha Toshiba | Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same |
| USRE45481E1 (en) | 1995-10-12 | 2015-04-21 | Kabushiki Kaisha Toshiba | Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same |
| JP2015165563A (en) * | 2014-02-07 | 2015-09-17 | 株式会社神戸製鋼所 | Wiring film for flat panel displays, and aluminium alloy sputtering target |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5612751A (en) * | 1979-07-11 | 1981-02-07 | Toshiba Corp | Production of semiconductor device |
| JPS571241A (en) * | 1980-06-03 | 1982-01-06 | Toshiba Corp | Integrated circuit device |
| JPS5928553A (en) * | 1982-08-11 | 1984-02-15 | Hitachi Ltd | Corrosion resistant aluminum electronic material |
| JPS5974650A (en) * | 1982-09-20 | 1984-04-27 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Method of forming mutial connection metal system |
-
1987
- 1987-11-20 JP JP62292098A patent/JPH01134426A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5612751A (en) * | 1979-07-11 | 1981-02-07 | Toshiba Corp | Production of semiconductor device |
| JPS571241A (en) * | 1980-06-03 | 1982-01-06 | Toshiba Corp | Integrated circuit device |
| JPS5928553A (en) * | 1982-08-11 | 1984-02-15 | Hitachi Ltd | Corrosion resistant aluminum electronic material |
| JPS5974650A (en) * | 1982-09-20 | 1984-04-27 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Method of forming mutial connection metal system |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0425162A2 (en) * | 1989-10-25 | 1991-05-02 | AT&T Corp. | Improved aluminum metallization for semiconductor devices |
| US5976641A (en) * | 1991-03-07 | 1999-11-02 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| US6206985B1 (en) | 1991-03-07 | 2001-03-27 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| JPH04323872A (en) * | 1991-04-23 | 1992-11-13 | Kobe Steel Ltd | Material for semiconductor device |
| US5296653A (en) * | 1991-12-09 | 1994-03-22 | Kabushiki Kaisha Toshiba | Device having a multi-layered conductor structure |
| US5830786A (en) * | 1993-02-22 | 1998-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring |
| USRE43590E1 (en) | 1993-07-27 | 2012-08-21 | Kobelco Research Institute, Inc. | Aluminum alloy electrode for semiconductor devices |
| JPH0745555A (en) * | 1993-07-27 | 1995-02-14 | Kobe Steel Ltd | Semiconductor electrode and manufacturing method thereof as well as semiconductor film forming sputtering target |
| USRE44239E1 (en) | 1993-07-27 | 2013-05-28 | Kobelco Research Institute, Inc. | Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices |
| US6033542A (en) * | 1993-07-27 | 2000-03-07 | Kabushiki Kaisha Kobe Seiko Sho | Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices |
| JPH088256A (en) * | 1994-06-22 | 1996-01-12 | Sony Corp | Wiring structure for semiconductor device and transistor array for display element |
| US5726720A (en) * | 1995-03-06 | 1998-03-10 | Canon Kabushiki Kaisha | Liquid crystal display apparatus in which an insulating layer between the source and substrate is thicker than the insulating layer between the drain and substrate |
| USRE41975E1 (en) | 1995-10-12 | 2010-11-30 | Kabushiki Kaisha Toshiba | Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same |
| USRE45481E1 (en) | 1995-10-12 | 2015-04-21 | Kabushiki Kaisha Toshiba | Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same |
| KR100670060B1 (en) * | 2000-04-20 | 2007-01-16 | 삼성전자주식회사 | Manufacturing method of a thin film transistor array panel for a liquid crystal display |
| KR100845705B1 (en) * | 2006-05-31 | 2008-07-10 | 가부시키가이샤 고베 세이코쇼 | Thin film transistor substrate and display device |
| US7781767B2 (en) | 2006-05-31 | 2010-08-24 | Kobe Steel, Ltd. | Thin film transistor substrate and display device |
| JP2015165563A (en) * | 2014-02-07 | 2015-09-17 | 株式会社神戸製鋼所 | Wiring film for flat panel displays, and aluminium alloy sputtering target |
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