JPH0521163A - Organic thin film light emitting element - Google Patents

Organic thin film light emitting element

Info

Publication number
JPH0521163A
JPH0521163A JP3139316A JP13931691A JPH0521163A JP H0521163 A JPH0521163 A JP H0521163A JP 3139316 A JP3139316 A JP 3139316A JP 13931691 A JP13931691 A JP 13931691A JP H0521163 A JPH0521163 A JP H0521163A
Authority
JP
Japan
Prior art keywords
light emitting
injection layer
group
hole injection
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3139316A
Other languages
Japanese (ja)
Inventor
Noboru Kosho
昇 古庄
Osamu Nabeta
修 鍋田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP3139316A priority Critical patent/JPH0521163A/en
Publication of JPH0521163A publication Critical patent/JPH0521163A/en
Pending legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To eliminate electrical defects by pin holes to prevent short circuit and to improve brightness by composing a hole injection layer with a hole injection substance bound by a polystyrene resin in an organic thin film light emitting element having electrodes, a light emitting layer, and a charge injection layer comprising at least tire hole injection layer. CONSTITUTION:A positive electrode 2 comprising a translucent film such as Au, Ni, and a transparent conductive film such as ITO, SmO2 is deposited on a transparent substrate 1 comprising glass etc. A hole injection layer 3, a light emitting layer 4, and an electron injection layer 5 are successively laminated on the positive electrode. A negative electrode 6 is provided on the electron injection layer. In this constitution, (8-hydroxyquinoline) aluminium is used for the light emitting agent of the light emitting layer 4. The injection layer 3 is composed of a hole injection substance bound by a polystyrene resin. Where, for the injection substance, it is used a diamine-type compound such as 1,1-bis(4- N1N-ditriaminophenyl) cyclohexane etc., hydroxyquinoline etc. For the negative electrode 6, Mg, Mg/Ag etc., are used. The negative electrode 6 and the positive- electrode 2 are connected with a DC power supply 7.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は有機薄膜発光素子の正
孔注入層にかかり、特に正孔注入層の成膜性にすぐれる
発光素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hole injection layer of an organic thin film light emitting device, and more particularly to a light emitting device having excellent film forming properties of the hole injection layer.

【0002】[0002]

【従来の技術】従来のブラウン管に代わるフラットディ
スプレイの需要の急増に伴い、各種表示素子の開発及び
実用化が精力的に進められている。エレクトロルミネッ
センス素子(以下EL素子とする)もこうしたニ−ズに
即するものであり、特に全固体の自発発光素子として、
他のディスプレイにはない高解像度及び高視認性により
注目を集めている。現在、実用化されているものは、発
光層にZnS/Mn系を用いた無機材料からなるEL素
子である。しかるに、この種の無機EL素子は発光に必
要な駆動電圧が200V程度と高いため駆動方法が複雑
となり製造コストが高いといった問題点がある。また、
青色発光の効率が低いため、フルカラ−化が困難であ
る。
2. Description of the Related Art With the rapid increase in demand for flat displays replacing conventional cathode ray tubes, various display elements have been vigorously developed and put into practical use. An electroluminescence element (hereinafter referred to as an EL element) is also adapted to such a need, and in particular, as an all solid state spontaneous light emitting element,
It attracts attention due to its high resolution and high visibility that other displays do not have. At present, what has been put into practical use is an EL element made of an inorganic material using a ZnS / Mn system in the light emitting layer. However, this type of inorganic EL element has a problem that the driving method is complicated and the manufacturing cost is high because the driving voltage required for light emission is as high as about 200V. Also,
Since the efficiency of blue light emission is low, full colorization is difficult.

【0003】これに対して、有機材料を用いた薄膜発光
素子は、発光に必要な駆動電圧が大幅に低減でき、かつ
各種発光材料の添加によりフルカラ−化の可能性を充分
にもつことから、近年研究が活発化している。特に電極
/正孔注入層/発光層からなる積層型において、発光剤
にトリス(8−ヒドロキシキノリン)アルミニウム、正
孔注入剤に1,1’−ビス(4−N,N−ジトリアミノ
フェニル)シクロヘキサンを用いることにより、10V
以下の印加電圧で1000cd/m2 以上高輝度が得ら
れたという報告がなされて以来開発に拍車がかけられた
(Appl.Phys.Lett.51,913,(1987)) 。
On the other hand, a thin-film light emitting device using an organic material can drastically reduce the driving voltage required for light emission, and has the possibility of being fully colored by adding various light emitting materials. Research has become active in recent years. In particular, in the laminated type composed of electrode / hole injection layer / light emitting layer, tris (8-hydroxyquinoline) aluminum is used as the light emitting agent and 1,1′-bis (4-N, N-ditriaminophenyl) is used as the hole injection agent. 10V by using cyclohexane
The development was spurred since it was reported that a high brightness of 1000 cd / m 2 or more was obtained with the following applied voltage (Appl. Phys. Lett. 51, 913, (1987)).

【0004】現在広く研究されている該有機発光素子の
具体的な構造ならびに材料につき、図面を使って、以下
に説明する。図1は積層構造型の典型的な構造断面図で
ある(発光は図中の矢印に示す方向に進む)。ガラス等
の透明基板1上に金、ニッケル等の半透膜やインジウム
スズ酸化物(ITO)、酸化スズ(SnO2 )等の透明
導電膜からなる正極2を抵抗加熱蒸着、電子ビ−ム蒸
着、スパッタ法により形成する。該電極2は、透明性を
持たせるために、100〜3000Åの厚さにすること
が望ましい。次に正孔注入層3、発光層4と順次有機薄
膜を成膜する。
Specific structures and materials of the organic light-emitting device, which are currently widely studied, will be described below with reference to the drawings. FIG. 1 is a typical structural sectional view of a laminated structure type (light emission proceeds in a direction indicated by an arrow in the drawing). On a transparent substrate 1 made of glass or the like, a positive electrode 2 made of a semi-permeable film of gold, nickel or the like or a transparent conductive film of indium tin oxide (ITO), tin oxide (SnO 2 ) or the like is heated by resistance heating or electron beam evaporation. Formed by sputtering. It is desirable that the electrode 2 has a thickness of 100 to 3000 Å in order to have transparency. Next, an organic thin film is sequentially formed on the hole injection layer 3 and the light emitting layer 4.

【0005】正孔注入物質としては、上記1,1’−ビ
ス(4−N,N−ジトリアミノフェニル)シクロヘキサ
ン等のジアミン系化合物の他に、ヒドラゾン系化合物、
スチルベン系化合物等が用いられている。また、発光物
質には、上記トリス(8−ヒドロキシキノリン)アルミ
ニウム等の金属錯体化合物の他に、ジスチリルベンゼン
化合物、ペリレン系化合物等が用いられている。両層と
もにスピンコ−ト、キャスティング、LB法、抵抗加熱
蒸着、電子ビ−ム蒸着等により成膜できるが、現在のと
ころ発光特性面で優れていることから抵抗加熱蒸着法が
主流である。また、両層の膜厚は、抵抗加熱蒸着法にお
いては、それぞれ200〜3000Å、好適には300
〜1500Åである。最後に負極5を蒸着にて形成す
る。なお、該電極5用材料としては仕事関数の小さいM
g,Mg/Ag,In,Ca,Al等が用いられる。
As the hole injecting substance, in addition to diamine compounds such as 1,1'-bis (4-N, N-ditriaminophenyl) cyclohexane, hydrazone compounds,
Stilbene compounds and the like are used. In addition to the metal complex compound such as tris (8-hydroxyquinoline) aluminum, a distyrylbenzene compound, a perylene-based compound, or the like is used as the light emitting substance. Both layers can be formed by spin coating, casting, LB method, resistance heating vapor deposition, electron beam vapor deposition and the like, but at present the resistance heating vapor deposition method is the mainstream because of its excellent emission characteristics. Further, the film thickness of both layers is 200 to 3000 Å, preferably 300 in the resistance heating vapor deposition method.
It is ~ 1500Å. Finally, the negative electrode 5 is formed by vapor deposition. As a material for the electrode 5, M having a small work function is used.
g, Mg / Ag, In, Ca, Al or the like is used.

【0006】図2は他の素子構造をしめす断面図であ
る。(発光は図の矢印に示す方向に進む)。ガラス等の
透明基板1上に金、ニッケル等の半透膜やインジウムス
ズ酸化物(ITO)、酸化スズ(SnO2 )等の透明導
電膜からなる正極2を、図1と同様に形成し、正孔注入
層3,発光層4さらに電子注入層5の3層を成膜する。
該電子注入剤については、ジフェノキノン系化合物、ペ
リレン系化合物、オキサジアゾ−ル系化合物等が用いら
れている。該正孔注入層3,発光層4および電子注入層
5の膜厚はすべて上記図1の場合と同様にそれぞれ20
0〜3000Å,好適には300〜1500Åである。
最後に負極6をMg,Mg/Ag,In,Ca,Al等
を用いて蒸着する。
FIG. 2 is a sectional view showing another element structure. (Light emission proceeds in the direction indicated by the arrow in the figure). On a transparent substrate 1 such as glass, a positive electrode 2 made of a semi-permeable film such as gold or nickel or a transparent conductive film such as indium tin oxide (ITO) or tin oxide (SnO 2 ) is formed in the same manner as in FIG. Three layers of the hole injection layer 3, the light emitting layer 4, and the electron injection layer 5 are formed.
As the electron injecting agent, diphenoquinone compounds, perylene compounds, oxadiazol compounds and the like are used. The hole injecting layer 3, the light emitting layer 4, and the electron injecting layer 5 all have a thickness of 20 as in the case of FIG.
It is 0 to 3000Å, preferably 300 to 1500Å.
Finally, the negative electrode 6 is vapor-deposited using Mg, Mg / Ag, In, Ca, Al or the like.

【0007】[0007]

【発明が解決しようとする課題】この様に、有機材料を
用いた薄膜発光素子は低電圧駆動やフルカラ−化の可能
性等を強く示唆しているものの、性能面で解決しなけれ
ばならない課題が多く残されている。特に1万時間程度
の長時間駆動に伴う特性劣化の問題は乗り越えなければ
ならないハ−ドルである。また、該有機薄膜の膜厚は1
μm以下であるため、成膜性が良好で、成膜中にピンホ
−ル等の電気的欠陥を生じないこと、さらには、薄膜で
あるがために、発光時に素子に加わる電界及び/または
電流により短絡しない様な材料開発および成膜法の検討
が必要である。特に、抵抗加熱蒸着膜においては電気的
欠陥が発生しやすく、かつ発光時に短絡しやすいといっ
た問題がある。さらには、量産性の観点から、大量製造
が容易で安価な有機材料の開発や素子形成方法の改良等
も重要な技術課題である。
As described above, although the thin film light emitting device using an organic material strongly suggests the possibility of low voltage driving and full colorization, the problem to be solved in terms of performance. There are many left. In particular, the problem of characteristic deterioration due to long-time driving of about 10,000 hours is a hardware that must be overcome. The thickness of the organic thin film is 1
Since the thickness is less than or equal to μm, the film forming property is good, and electrical defects such as pinholes do not occur during the film formation. Furthermore, since it is a thin film, the electric field and / or current applied to the element during light emission. Therefore, it is necessary to develop materials and study film formation methods so that short circuits do not occur. In particular, the resistance heating vapor deposition film has problems that electrical defects are likely to occur and that a short circuit is likely to occur during light emission. Further, from the viewpoint of mass productivity, development of an inexpensive organic material that can be easily mass-produced and improvement of an element forming method are important technical subjects.

【0008】この発明は上述の点に鑑みてなされその目
的は樹脂分散膜におけるバインダを開発することにより
成膜性に優れる有機薄膜発光素子を提供することにあ
る。
The present invention has been made in view of the above points, and an object thereof is to provide an organic thin film light emitting device having excellent film forming properties by developing a binder in a resin dispersion film.

【0009】[0009]

【課題を解決するための手段】上述の目的はこの発明に
よれば、正極と負極とからなる一対の電極と、その間に
はさまれた発光層と電荷注入層とを有し、電荷注入層は
電子注入層と正孔注入層のうちの少なくとも正孔注入層
からなり、この際正孔注入層は正孔注入物質とポリスチ
レン樹脂からなるとする事により達成される。
According to the present invention, there is provided a charge injection layer having a pair of electrodes consisting of a positive electrode and a negative electrode, a light emitting layer and a charge injection layer sandwiched therebetween. Is formed of at least a hole injection layer of an electron injection layer and a hole injection layer, and the hole injection layer is formed of a hole injection material and polystyrene resin.

【0010】ジアミン系化合物の具体例が化学式I−1
ないし化学式I−14にヒドラゾン系化合物が化学式II
−1ないし化学式II−21にスチルベン系化合物が化学
式III-1ないし化学式III-4に示される。
Specific examples of the diamine compounds are represented by the chemical formula I-1.
Or a hydrazone compound represented by the chemical formula II-14.
-1 to Chemical Formula II-21 and stilbene compounds are shown in Chemical Formulas III-1 to III-4.

【0011】[0011]

【化5】 [Chemical 5]

【0012】[0012]

【化6】 [Chemical 6]

【0013】[0013]

【化7】 [Chemical 7]

【0014】[0014]

【化8】 [Chemical 8]

【0015】[0015]

【化9】 [Chemical 9]

【0016】[0016]

【作用】発光層と正孔注入層を積層してなる有機薄膜発
光素子において、該正孔注入層に正孔注入物質とポリス
チレン樹脂バインダ−の分散膜を用いることにより、良
好な膜形成可能で、膜中に発生するピンホ−ル等の電気
的欠陥が少なく、発光時に素子にかかる電界または電流
により発生する短絡現象を防げるといった作用があると
ともに、発光特性においても良好な結果をもたらす。ま
た、該正孔注入物質として、ジアミン系化合物、ヒドラ
ゾン系化合物及びスチルベン系化合物が良好な結果をも
たらす。
In an organic thin film light emitting device in which a light emitting layer and a hole injection layer are laminated, a favorable film can be formed by using a dispersion film of a hole injection substance and a polystyrene resin binder in the hole injection layer. In addition, there are few electrical defects such as pinholes generated in the film, the function of preventing a short circuit phenomenon caused by an electric field or a current applied to the element at the time of light emission, and good results are also obtained in light emission characteristics. In addition, diamine compounds, hydrazone compounds and stilbene compounds give good results as the hole injecting substance.

【0017】[0017]

【実施例】次にこの発明の実施例を図面に基づいて説明
する。この発明において、正孔注入層として導入した正
孔注入物質とポリスチレンバインダ−からなる分散膜
は、両者を適当な有機溶媒中に溶解せしめてなる塗液を
用いて、スピンコ−ト、キャスティング等により形成さ
れる。該塗液の配合時における正孔注入物質の、正孔注
入物質とポリスチレンバインダ−全量に占める重量比は
30〜80%、好適には40〜70%である。また、該
正孔注入層分散膜の膜厚は、500〜3000Å、好適
には800〜2000Åである。
Embodiments of the present invention will now be described with reference to the drawings. In the present invention, the dispersion film composed of the hole injecting substance introduced as the hole injecting layer and the polystyrene binder is formed by spin coating, casting or the like using a coating solution prepared by dissolving both in an appropriate organic solvent. It is formed. The weight ratio of the hole injecting substance to the total amount of the hole injecting substance and the polystyrene binder at the time of blending the coating liquid is 30 to 80%, preferably 40 to 70%. The thickness of the hole injection layer dispersion film is 500 to 3000Å, preferably 800 to 2000Å.

【0018】実施例1 膜厚〜1000ÅのITOを設けた50mm角のガラス
を基板とし該基板をスピンコ−タにセットした後、前記
ジアミン系化合物のうちI−1で示した化合物1重量
部、ポリスチレン樹脂1重量部をジクロロメタン500
重量部にて溶解させた塗液を用いて、回転数5000r
pmにて該基板上に〜1000Åスピンコ−トし、正孔
注入層とした。次に、該正孔注入層をコ−トした基板を
抵抗加熱蒸着装置内にセットし、発光層を形成した。成
膜に際して、真空槽内は6×10-6Torrまで減圧し
た。発光剤には、(8−ヒドロキシキノリン)アルミニ
ウムを用い、ボ−ト温度100〜3000 Cの範囲で加
熱し、成膜速度を2Å/秒の条件下で600Å形成し
た。最後に、試料を真空槽から取り出し、直径5mmの
ドットパタ−ン16個からなるステンレス製マスクを取
りつけ、新たに抵抗加熱蒸着装置内にセットし負極とし
てMg/Ag(10:1の比率)を形成した。
Example 1 A glass substrate of 50 mm square provided with ITO having a film thickness of about 1000 Å was used as a substrate, and the substrate was set on a spin coater. 1 part by weight of polystyrene resin is added to dichloromethane 500
Rotation speed: 5000r using coating solution dissolved in parts by weight
The hole injection layer was spin-coated on the substrate by pm at ˜1000Å. Next, the substrate coated with the hole injection layer was set in a resistance heating vapor deposition device to form a light emitting layer. During film formation, the pressure inside the vacuum chamber was reduced to 6 × 10 −6 Torr. The luminescent agent, (8-hydroxyquinoline) with aluminum, ball - heated in the range of bets temperature 100 to 300 0 C, was 600Å formed the deposition rate under the conditions of 2 Å / sec. Finally, the sample was taken out of the vacuum chamber, a stainless mask consisting of 16 dot patterns with a diameter of 5 mm was attached, and it was newly set in the resistance heating vapor deposition device to form Mg / Ag (10: 1 ratio) as the negative electrode. did.

【0019】実施例2 実施例1と同様に膜厚〜1000ÅのITOを設けた5
0mm角のガラスを基板に用い実施例1と同一材料、同
一製法、同一条件下で正孔注入層と発光層を形成する。
次に、発光層形成後、真空槽の真空を破らず、続けて電
子注入層として下記(IV)に構造式を示したペリレンテ
トラカルボン酸誘導体を、ボ−ト加熱温度150〜30
0℃、成膜速度3Å/秒の条件下で700Å形成した。
最後に、上記実施例1と同様に、試料を真空槽から取り
出し、直径5mmのドットパタ−ン16個からなるステ
ンレス製マスクを取りつけ、新たに抵抗加熱蒸着装置内
にセットし負極としてMg/Ag(10:1の比率)を
形成した。
Example 2 As in the case of Example 1, ITO having a film thickness of up to 1000 Å was provided.
A hole injecting layer and a light emitting layer are formed using the same material, the same manufacturing method, and the same conditions as in Example 1, using 0 mm square glass as the substrate.
Next, after forming the light emitting layer, a perylene tetracarboxylic acid derivative having a structural formula (IV) shown below was used as an electron injection layer without breaking the vacuum of the vacuum chamber, and a heating temperature of 150 to 30
700 Å was formed under conditions of 0 ° C. and a film forming rate of 3 Å / sec.
Finally, as in Example 1, the sample was taken out of the vacuum chamber, a stainless mask consisting of 16 dot patterns with a diameter of 5 mm was attached, and the sample was newly set in the resistance heating vapor deposition device and Mg / Ag ( 10: 1 ratio) was formed.

【0020】[0020]

【化10】 [Chemical 10]

【0021】以上に示した2つの実施例における有機薄
膜発光素子に、直流電圧を印加したところ、ともに緑色
(発光中心波長:550nm)の均一な発光が得られ
た。また、ともに該50mm 角のガラス基板上の直径
5mmのドットパタ−ン16個のパタ−ンすべてが、短
絡現象をおこさず、発光特性ばらつき5%の範囲内にお
さまった。さらに、実施例1の素子においては、印加電
圧15V下で、2400cd/m2 (電流密度100m
A/cm2 )、実施例2の素子においては、印加電圧1
5V下で、2520cd/m2 (電流密度95mA/c
2 )の高輝度発光が得られた。
When a DC voltage was applied to the organic thin film light emitting devices in the above two examples, uniform light emission of green (emission center wavelength: 550 nm) was obtained. In addition, all of the 16 dot patterns of 5 mm in diameter on the 50 mm square glass substrate did not cause a short circuit phenomenon and stayed within the range of 5% variation in light emission characteristics. Furthermore, in the device of Example 1, under an applied voltage of 15 V, 2400 cd / m 2 (current density 100 m
A / cm 2 ), in the device of Example 2, an applied voltage of 1
2520 cd / m 2 under 5 V (current density 95 mA / c
A high-luminance luminescence of m 2 ) was obtained.

【0022】実施例3 正孔注入物質に前記ヒドラゾン系化合物のうちII−6を
用いて、その他の材料製法、条件は実施例1と同一にし
て素子を形成した。上記実施例における有機発光素子
に、直流電圧を印加したところ、緑色(発光中心波長:
550nm)の均一な発光が得られた。また、該50m
m角のガラス基板上の直径5mmのドットパタ−ン16
個のパタ−ンすべてが、短絡現象をおこさず、発光特性
ばらつき7%の範囲内におさまった。さらに、印加電圧
15V下で、2050cd/m2 (電流密度120mA
/cm2 )の高輝度発光が得られた。
Example 3 A device was formed by using II-6 of the hydrazone compounds as the hole injecting material and using the same method and conditions as in Example 1 except for the other materials. When a DC voltage was applied to the organic light emitting device in the above example, green (light emission center wavelength:
A uniform emission of 550 nm) was obtained. Also, the 50m
Dot pattern 16 with a diameter of 5 mm on an m-square glass substrate
All the individual patterns did not cause a short circuit phenomenon, and the variation in emission characteristics was within the range of 7%. Furthermore, under an applied voltage of 15 V, 2050 cd / m 2 (current density 120 mA
A high-luminance luminescence of / cm 2 ) was obtained.

【0023】実施例4 正孔注入物質に前記スチルベン系化合物のうちIII-2を
用いて、その他の材料製法、条件は実施例1と同一にし
て素子を形成した。上記実施例における有機発光素子
に、直流電圧を印加したところ、緑色(発光中心波長
:550nm)の均一な発光が得られた。また、該5
0mm角のガラス基板上の直径5mmのドットパタ−ン
16個のパタ−ンすべてが、短絡現象をおこさず、発光
特性ばらつき7%の範囲内におさまった。さらに、印加
電圧15V下で、2240cd/m2 (電流密度110
mA/cm2 )の高輝度発光が得られた。
Example 4 A device was formed by using III-2 of the stilbene compounds as the hole injecting material, and using the same method and conditions as in Example 1 for the other materials. When a DC voltage was applied to the organic light-emitting device in the above-mentioned example, uniform light emission of green color (emission center wavelength: 550 nm) was obtained. Also, the 5
All 16 dot patterns with a diameter of 5 mm on a 0 mm square glass substrate did not cause a short circuit phenomenon, and the variation in light emission characteristics was within the range of 7%. Furthermore, under an applied voltage of 15 V, 2240 cd / m 2 (current density 110
A high-luminance light emission of mA / cm 2 ) was obtained.

【0024】[0024]

【発明の効果】この発明によれば、正極と負極とからな
る一対の電極と、その間にはさまれた発光層と電荷注入
層とを有し、電荷注入層は電子注入層と正孔注入層のう
ちの少なくとも正孔注入層からなり、この際正孔注入層
は正孔注入物質とポリスチレン樹脂からなるとするの
で、良好な膜形成可能で、膜中に発生するピンホ−ル等
の電気的欠陥が少なく、発光時に素子にかかる電界また
は電流により発生する短絡現象を防ぐことができ高輝度
発光性に優れる有機薄膜発光素子が得られる。
According to the present invention, a pair of electrodes composed of a positive electrode and a negative electrode, a light emitting layer and a charge injection layer sandwiched between the electrodes are provided, and the charge injection layer is an electron injection layer and a hole injection layer. Of the layers, at least the hole injection layer is formed. In this case, since the hole injection layer is formed of the hole injection material and the polystyrene resin, a good film can be formed and electrical properties such as pinholes generated in the film can be formed. It is possible to obtain an organic thin film light emitting device which has few defects and can prevent a short circuit phenomenon which is caused by an electric field or a current applied to the device during light emission and which is excellent in high-luminance light emission.

【図面の簡単な説明】[Brief description of drawings]

【図1】積層構造型の素子の構造を示す断面図FIG. 1 is a cross-sectional view showing the structure of a laminated structure type element.

【図2】積層構造型の素子の他の構造をしめす断面図FIG. 2 is a cross-sectional view showing another structure of a laminated structure type element.

【符号の説明】[Explanation of symbols]

1 絶縁性透明基板 2 正極 3 正孔注入層 4 発光層 5 電子注入層 6 負極 7 直流電源 1 Insulating transparent substrate 2 positive electrode 3 Hole injection layer 4 Light emitting layer 5 Electron injection layer 6 Negative electrode 7 DC power supply

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】正極と負極とからなる一対の電極と、その
間にはさまれた発光層と電荷注入層とを有し、 電荷注入層は電子注入層と正孔注入層のうちの少なくと
も正孔注入層からなり、この際正孔注入層は正孔注入物
質とポリスチレン樹脂からなることを特徴とする有機薄
膜発光素子。
1. A pair of electrodes consisting of a positive electrode and a negative electrode, and a light emitting layer and a charge injection layer sandwiched therebetween, wherein the charge injection layer is at least a positive electrode of an electron injection layer and a hole injection layer. An organic thin film light emitting device comprising a hole injection layer, wherein the hole injection layer comprises a hole injection material and polystyrene resin.
【請求項2】請求項1記載の素子において、正孔注入物
質は一般式(I)で示されるジアミン系化合物であるこ
とを特徴とする有機薄膜発光素子。 【化1】 (一般式(I)においてAは下記一般式(IA),(IB)
又は(IC) で示される。 【化2】 1 、R2 、R3 、R4 は、置換されてもよいアルキル
基,アリル基,アリ−ル基,アラルキル基である。また
一般式(IA),(IB) 又は(IC) においてR5 、R6
7 、R8 は水素原子,ハロゲン,置換されてもよいア
ルキル基,アルコキシ基、Xは−C(R19)(R20)−
(R19、R20は水素原子,アルキル基),─O─,─S
─,>C6 10である。)
2. The organic thin film light emitting device according to claim 1, wherein the hole injecting substance is a diamine compound represented by the general formula (I). [Chemical 1] (In the general formula (I), A is the following general formula (IA), (IB)
Or (IC). [Chemical 2] R 1 , R 2 , R 3 and R 4 are an optionally substituted alkyl group, an allyl group, an aryl group and an aralkyl group. In the general formula (IA), (IB) or (IC), R 5 , R 6 and
R 7 and R 8 are hydrogen atoms, halogens, optionally substituted alkyl groups and alkoxy groups, and X is —C (R 19 ) (R 20 ) —.
(R 19 and R 20 are hydrogen atoms and alkyl groups), --O--, --S
─,> C 6 H 10 . )
【請求項3】請求項1記載の素子において、正孔注入物
質は一般式(II)で示されるヒドラゾン系化合物である
ことを特徴とする有機薄膜発光素子。 【化3】 ( R9 は、水素原子,アルキル基,ハロゲン原子,ア
ルコキシ基をあらわし、R10、R11は、置換されてもよ
いアルキル基,アリ−ル基,アラルキル基、R12、R13
は置換されてもよいアルキル基,アリ−ル基,アラルキ
ル基,テニル基である。)
3. The organic thin film light emitting device according to claim 1, wherein the hole injecting substance is a hydrazone compound represented by the general formula (II). [Chemical 3] (R 9 represents a hydrogen atom, an alkyl group, a halogen atom or an alkoxy group, and R 10 and R 11 represent an optionally substituted alkyl group, an aryl group, an aralkyl group, R 12 and R 13
Is an optionally substituted alkyl group, aryl group, aralkyl group or tenyl group. )
【請求項4】請求項1記載の素子において、正孔注入物
質は一般式(III )で示されるスチルベン系化合物であ
ることを特徴とする有機薄膜発光素子。 【化4】 (R14は、水素原子,アルキル基,ハロゲン基,アルコ
キシ基を表しR15、R16は、置換されてもよいアリ−ル
基,アラルキル基を表しR17、R18は、置換されてもよ
いアリ−ル基である。)
4. The organic thin film light emitting device according to claim 1, wherein the hole injecting substance is a stilbene compound represented by the general formula (III). [Chemical 4] (R 14 represents a hydrogen atom, an alkyl group, a halogen group or an alkoxy group, R 15 and R 16 represent an aryl group or an aralkyl group which may be substituted, and R 17 and R 18 may be substituted. It is a good aryl group.)
JP3139316A 1991-05-08 1991-06-12 Organic thin film light emitting element Pending JPH0521163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3139316A JPH0521163A (en) 1991-05-08 1991-06-12 Organic thin film light emitting element

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3-101683 1991-05-08
JP10168391 1991-05-08
JP3139316A JPH0521163A (en) 1991-05-08 1991-06-12 Organic thin film light emitting element

Publications (1)

Publication Number Publication Date
JPH0521163A true JPH0521163A (en) 1993-01-29

Family

ID=26442518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3139316A Pending JPH0521163A (en) 1991-05-08 1991-06-12 Organic thin film light emitting element

Country Status (1)

Country Link
JP (1) JPH0521163A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033542A (en) * 1993-07-27 2000-03-07 Kabushiki Kaisha Kobe Seiko Sho Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033542A (en) * 1993-07-27 2000-03-07 Kabushiki Kaisha Kobe Seiko Sho Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices

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