CN102154574A - 半导体组件连接用合金线 - Google Patents

半导体组件连接用合金线 Download PDF

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CN102154574A
CN102154574A CN201010509902XA CN201010509902A CN102154574A CN 102154574 A CN102154574 A CN 102154574A CN 201010509902X A CN201010509902X A CN 201010509902XA CN 201010509902 A CN201010509902 A CN 201010509902A CN 102154574 A CN102154574 A CN 102154574A
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lead wire
alloy
content
alloy lead
gold
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何守仁
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DONGGUAN ZHENGQI ELECTRONICS CO LTD
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DONGGUAN ZHENGQI ELECTRONICS CO LTD
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Abstract

本发明公开了一种半导体组件连接用合金线，其特征在于合金中按重量百分比计，含有0.4-15％的金、0.2-5％的钯和铂中的至少一种、0.0001-0.05％的Y、La、Ru、Ir、Eu、Yb、Gd、Be中的至少一种，其余部分为白银以及不可避免之不纯物。本发明的合金线可以提高第二侧边接合性、剥离强度及振动断裂性。

Description

半导体组件连接用合金线
技术领域
本发明涉及一种半导体组件连接用合金线。
背景技术
现有技术中，晶体管、IC、LSI、LED等半导体组件连结电极与外部导线的技术是以含有99.99％比重以上的高纯度黄金与其它微量金属元素做成的金线来作为连接线。主要是采超音波并用热压着连接法。以超音波并用热压着连接法来接线，形成的回路如图1所示。1为IC、LED芯片、2为IC、LED芯片上的Al、Au电极、3为合金线、4为导线架、5为第一侧边接合点、6为第二侧边接合点。
近来，半导体的安装是以外部导线材料的散热性、成本来考量，所以多半采铜合金制成的导线架。使用铜合金制的导线架时，由于封装用树脂与导线架的热膨胀系数差异过大，半导体启动后温度上升，对形成回路的合金线造成外部应力，特别是对暴露于严酷的热循环环境下的半导体，特别容易产生断线的问题。此外，随着半导体装置小型化及高密度化的要求越来越高，也产生IC芯片多接脚化及间隔狭窄化的需求。为达成多接脚化和间隔狭窄化的目的，回路的形状必须稳定。一方面在进行前述的超音波并用热压着连接法时，于导线架下方设置可加热至150～250℃的热源。虽然此时加热的高温有助于提高接着性，但也使导线架容易弯曲，而易产生回路参差不齐的形状。
但若加热温度过低，虽然回路的形状较稳定，但由于低温接合的缘故，会产生合金线与导线架的接合点(以下称为第二侧边接合点)的接合性问题。因此，为控制回路形状的稳定度则必须要有能于100℃低温作业时兼顾第二侧边接点可有较佳接合度的合金线。
发明内容
为解决上述问题，本发明的目的在于提供一种半导体组件连接用合金线，提高第二侧边接合性、剥离强度及振动断裂性。
为实现上述目的，本发明的半导体组件连接用合金导线，其特征在于合金中按重量百分比计，含有0.4-15％的金、0.2-5％的钯和铂中的至少一种、0.0001-0.05％的Y、La、Ru、Ir、Eu、Yb、Gd、Be中的至少一种，其余部分为白银以及不可避免之不纯物。
优选的，所述合金导线中，金的含量为0.4-10％；更优选的，金的含量为0.4-5％；更优选的，金的含量为0.4-1.0％。
优选的，所述合金导线中，所述钯和铂中的至少一种的含量为0.5-2％。
优选的，所述合金中，不纯物的含量不高于0.01％；进一步优选的，不高于0.005％；更优选的，不高于0.001％。
在所述合金中，还可以添加一定量的Cu，从而降低成本；优选的，所述合金中，Cu的含量不高于10％。
本发明的合金导线中，Au含量在0.4％以上时，可显著提高第二侧边接合性，换句话说，防止剥离及振动断裂的性能也可提升。但是，Au含量若超过15％，热循换后的断线机率增加，第二侧边接合性也将变差。因此Au含量应介于0.4％～15％之间，并以0.4％～10％为最理想的比重。
本发明的合金导线中，钯(Pd)或白金(Pt)中至少一种的含量若在0.2％以上，可提高第二侧边接合性、剥离强度及振动断裂性。但若钯(Pd)或白金(Pt)中至少一种的含量超过5％，热循换后的断线机率增加，第二侧边接合性变差、此外IC，LED芯片也易产生断裂。因此钯(Pd)或白金(Pt)至少一种的含量应介于0.2％～5.0％之间，以0.5％～2.0％的比重为最理想。
特别是Au含量若介于以0.4％～10％，且钯(Pd)或白金(Pt)至少一种的含量介于0.5％～2％时，热循换后的断线性能及第二侧边接合性皆能提升，故为最合适的比例。
另外，至少一种比重占0.0001％以下的Y、La、Ru、Ir、Eu、Yb、Gd、Be，比占0.0001％以上的热循环后更易断线，第二侧边接合性也将变差。而上述成分之含量若超过0.05％，同样会产生容易断线、及第二侧边接合性变差的结果，因此以介于0.0001～0.05％为最理想的比重。
本发明的合金线中，铜(Cu)含量在10％以下时，已确定会有相同的效果。但若铜含量超过10％，热循换后容易断线，第二侧边接合性也将变差。
本发明的合金线的制造方法可以如下：以前述高纯度白银中加入一定量其它金属元素之后，以真空熔炼炉熔解后铸造成锭。再经滚轧、拉线机的冷加工(cold work)塑型加工及中间退火处理后，最后冷加工塑型加工成直径10～100μm的细线并进行最后的退火处理。
本发明的半导体组件连接用合金线应用于安装半导体装置时，以采用超音波合并热压着法将IC，LED芯片等半导体组件连接至导线架为最理想的方法。尤其特别适用于半导体装置的铜制导线架。
附图说明
图1为半导体组件与导线相连的示意图；
具体实施方式
下列实施例中，制备方法如下：于纯度为99.999％(重量百分比)的高纯度白银中，添加一定量的其它元素，以真空熔炼后，铸造出所示成分的合金棒，经滚轧、拉线机的冷加工塑型加工以及中间退火处理，最后冷加工塑型加工成直径18μm的细线并进行最后的退火处理以达到10～15％的伸长率。以K&S公司型号1488的全自动引线接合机，将此合金线在100℃的加热温度下，利用超音波合并热压着法，进行IC，LED芯片Al，Au电极与铜合金导线架间的的接合作业，做成100个接脚的接合样品。接着将样品以环氧树脂密封后，进行一百次-20℃x30分与180℃x30分的热循环测试。
(1)以重量百分比为0.4～15％的黄金(Au)、重量百分比为0.2％～5％的钯(Pd)或白金(Pt)中至少一种、重量百分比为0.0001～0.05％的Y、La、Ru、Ir、Eu、Yb、Gd、Be中的至少一种、余量为高纯度的白银，根据上述制备方法制备，并根据上述测试方法进行例1～45的测试，得出热循环后的断裂率在1.2％以下、剥离强度为10.3～13.4g、以及振动断裂率在1.4％以下的优异结果。
(2)其中重量百分比为0.4～10％的黄金(Au)、重量百分比占0.5～2％的钯(Pd)或白金(Pt)中至少一种、重量百分比为0.0001～0.05％的Y、La、Ru、Ir、Eu、Yb、Gd、Be中的至少一种、余量为高纯度的白银的成分组合，在热循环后的断裂率为0％、剥离强度为12.3～14.2g、以及振动断裂率为0％为最佳。
(3)此外，在上述(1)和(2)中加入重量百分比为0.01～10％的铜，亦可达到前述的效果。铜的重量百分比在0.0005～0.05％之间也同样可维持前述的效果。
在比较例(1)中若只使用未添加本发明中的任何其它成分的高纯度白银时，测出之热循环后断裂率为5.9％、剥离强度为1.6g、振动断裂率为4.9％等不良结果。
此外高纯度白银中虽然含有本发明的其它成份，但若如同在比较例(2)中，黄金(Au)的含有量为0.4％以下，或是如比较例(3)中，黄金(Au)的含有量在10％以上时，热循环后的断裂率为2.2～3.8％、剥离强度为3.2～4.8g、振动断裂率为2.1～3.6％，所得出的结果虽优于高纯度黄金的案例，但仍以本发明之成分比例的效果较佳。

Claims (9)

1.一种半导体组件连接用合金导线，其特征在于，所述合金导线中按重量百分比计，含有0.4-15％的金、0.2-5％的钯和铂中的至少一种、0.0001-0.05％的Y、La、Ru、Ir、Eu、Yb、Gd、Be中的至少一种，其余部分为白银以及不可避免的不纯物。
2.根据权利要求1所述的合金导线，其特征在于，所述合金导线中，所述金的含量为0.4-10％。
3.根据权利要求1所述的合金导线，其特征在于，所述合金导线中，金的含量为0.4-5％。
4.根据权利要求1所述的合金导线，其特征在于，所述合金导线中，金的含量为0.4-1.0％。
5.根据权利要求1所述的合金导线，其特征在于，所述钯和铂中的至少一种的含量为0.5-2％。
6.根据权利要求1所述的合金导线，其特征在于，在所述合金导线中，还含有重量百分比不高于10％的Cu。
7.根据权利要求1所述的合金导线，其特征在于，在所述合金导线中，不纯物的含量不高于0.01％。
8.根据权利要求1所述的合金导线，其特征在于，所述不纯物的含量不高于0.005％。
9.根据权利要求1所述的合金导线，其特征在于，所述不纯物的含量不高于0.001％。
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CN104022094A (zh) * 2014-05-30 2014-09-03 江西蓝微电子科技有限公司 银铕合金键合丝及其制造方法
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