ID26547A - Bahan logam untuk onderdil elektronik, onderdil elektronik, aparatus elektronik dan metode pemrosesan bahan logam - Google Patents
Bahan logam untuk onderdil elektronik, onderdil elektronik, aparatus elektronik dan metode pemrosesan bahan logamInfo
- Publication number
- ID26547A ID26547A IDP20000581A ID20000581A ID26547A ID 26547 A ID26547 A ID 26547A ID P20000581 A IDP20000581 A ID P20000581A ID 20000581 A ID20000581 A ID 20000581A ID 26547 A ID26547 A ID 26547A
- Authority
- ID
- Indonesia
- Prior art keywords
- electronic
- onderdil
- methods
- aparatus
- metal materials
- Prior art date
Links
- 239000007769 metal material Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53247—Noble-metal alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Conductive Materials (AREA)
- Physical Vapour Deposition (AREA)
- Weting (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19687899 | 1999-07-12 | ||
JP2000092980A JP4247863B2 (ja) | 1999-07-12 | 2000-03-28 | 電子部品用金属材料、電子部品用配線材料、電子部品用電極材料、電子部品、電子機器、金属材料の加工方法及び電子光学部品 |
Publications (1)
Publication Number | Publication Date |
---|---|
ID26547A true ID26547A (id) | 2001-01-18 |
Family
ID=26510042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IDP20000581A ID26547A (id) | 1999-07-12 | 2000-07-11 | Bahan logam untuk onderdil elektronik, onderdil elektronik, aparatus elektronik dan metode pemrosesan bahan logam |
Country Status (11)
Country | Link |
---|---|
US (1) | US6723281B1 (ja) |
EP (1) | EP1069194B1 (ja) |
JP (1) | JP4247863B2 (ja) |
KR (1) | KR100715405B1 (ja) |
CN (1) | CN1165990C (ja) |
CA (1) | CA2313767C (ja) |
DE (1) | DE60022951T2 (ja) |
ID (1) | ID26547A (ja) |
MX (1) | MXPA00006720A (ja) |
MY (1) | MY127011A (ja) |
TW (1) | TW457650B (ja) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6852384B2 (en) | 1998-06-22 | 2005-02-08 | Han H. Nee | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
US7384677B2 (en) | 1998-06-22 | 2008-06-10 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
US7314657B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
US7374805B2 (en) | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
US7316837B2 (en) | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
US7314659B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
JP4571741B2 (ja) * | 2000-10-31 | 2010-10-27 | 株式会社フルヤ金属 | 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法及び電子光学部品 |
US7465424B2 (en) | 2001-03-16 | 2008-12-16 | Ishifuku Metal Industry Co., Ltd. | Sputtering target material |
KR100750922B1 (ko) * | 2001-04-13 | 2007-08-22 | 삼성전자주식회사 | 배선 및 그 제조 방법과 그 배선을 포함하는 박막트랜지스터 기판 및 그 제조 방법 |
JP3804858B2 (ja) * | 2001-08-31 | 2006-08-02 | ソニー株式会社 | 有機電界発光素子およびその製造方法 |
US6860949B1 (en) * | 2001-12-10 | 2005-03-01 | Commemorative Brands, Inc. | High strength, tarnish resistant composition of matter |
KR100825102B1 (ko) | 2002-01-08 | 2008-04-25 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
EP1507267B1 (en) * | 2002-05-17 | 2008-11-05 | Idemitsu Kosan Company Limited | Wiring material and wiring board using the same |
KR100878236B1 (ko) * | 2002-06-12 | 2009-01-13 | 삼성전자주식회사 | 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법 |
TW574383B (en) * | 2002-07-31 | 2004-02-01 | Ritdisplay Corp | Alloy target for conductive film |
US20070131276A1 (en) * | 2003-01-16 | 2007-06-14 | Han Nee | Photo-voltaic cells including solar cells incorporating silver-alloy reflective and/or transparent conductive surfaces |
KR20040073142A (ko) * | 2003-02-13 | 2004-08-19 | 키스타 주식회사 | 박막 트랜지스터 액정표시장치의 반사판에 사용되는박막용 Ag 합금 |
WO2004094135A1 (en) | 2003-04-18 | 2004-11-04 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
KR100960687B1 (ko) | 2003-06-24 | 2010-06-01 | 엘지디스플레이 주식회사 | 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액 |
DE102004040778B4 (de) * | 2004-08-23 | 2011-11-24 | Umicore Ag & Co. Kg | Silberhartlotlegierungen |
EP1793013B1 (en) * | 2005-12-05 | 2017-07-19 | Rohm and Haas Electronic Materials LLC | Metallization of dielectrics |
DE102006003279B4 (de) * | 2006-01-23 | 2010-03-25 | W.C. Heraeus Gmbh | Sputtertarget mit hochschmelzender Phase |
JP2008130799A (ja) * | 2006-11-21 | 2008-06-05 | Sharp Corp | 半導体発光素子および半導体発光素子の製造方法 |
KR101001700B1 (ko) * | 2007-03-30 | 2010-12-15 | 엠케이전자 주식회사 | 반도체 패키지용 은합금 와이어 |
JP5228595B2 (ja) * | 2008-04-21 | 2013-07-03 | ソニー株式会社 | 半導体発光素子及びその製造方法、並びに、積層構造体及びその形成方法 |
CN102130069A (zh) * | 2008-07-14 | 2011-07-20 | Mk电子株式会社 | 用于半导体封装的Ag基合金引线 |
US20100239455A1 (en) * | 2009-03-23 | 2010-09-23 | Lee Jun-Der | Composite alloy bonding wire and manufacturing method thereof |
CN102154574A (zh) * | 2010-10-18 | 2011-08-17 | 东莞市正奇电子有限公司 | 半导体组件连接用合金线 |
TW201216300A (en) * | 2011-07-11 | 2012-04-16 | Profound Material Technology Co Ltd | Composite silver thread |
JP5472353B2 (ja) * | 2012-03-27 | 2014-04-16 | 三菱マテリアル株式会社 | 銀系円筒ターゲット及びその製造方法 |
CN103985699A (zh) * | 2013-02-08 | 2014-08-13 | 大瑞科技股份有限公司 | 银合金线 |
CN103194636A (zh) * | 2013-03-29 | 2013-07-10 | 上海中希合金有限公司 | 含钯的银合金自润滑电接触材料及复合带材 |
CN103146945A (zh) * | 2013-03-29 | 2013-06-12 | 上海中希合金有限公司 | 用于微电机整流子的自润滑电接触材料 |
EP2941105B1 (en) * | 2013-05-13 | 2022-02-16 | ULVAC, Inc. | Mounting device and method of manufacturing the same |
KR101535412B1 (ko) * | 2013-09-04 | 2015-07-24 | 엠케이전자 주식회사 | 은 합금 본딩 와이어 및 그의 제조 방법 |
JP2015109633A (ja) | 2013-10-22 | 2015-06-11 | 株式会社大真空 | 圧電振動素子と当該圧電振動素子を用いた圧電デバイスおよび、前記圧電振動素子の製造方法と当該圧電振動素子を用いた圧電デバイスの製造方法 |
DE102014214683A1 (de) * | 2014-07-25 | 2016-01-28 | Heraeus Deutschland GmbH & Co. KG | Sputtertarget auf der Basis einer Silberlegierung |
JP6574714B2 (ja) * | 2016-01-25 | 2019-09-11 | 株式会社コベルコ科研 | 配線構造およびスパッタリングターゲット |
CN108062991B (zh) * | 2016-11-08 | 2021-01-26 | 光洋应用材料科技股份有限公司 | 银合金线材 |
US11261533B2 (en) * | 2017-02-10 | 2022-03-01 | Applied Materials, Inc. | Aluminum plating at low temperature with high efficiency |
JP2020090706A (ja) * | 2018-12-05 | 2020-06-11 | 三菱マテリアル株式会社 | 金属膜、及び、スパッタリングターゲット |
CN111235425B (zh) * | 2020-02-19 | 2021-04-06 | 基迈克材料科技(苏州)有限公司 | AgPdCu合金及其制备方法、AgPdCu合金溅射靶材及其制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU386021A1 (ru) | 1968-05-05 | 1973-06-14 | BMEi/;i' ЭЛЕКТРОПРОВОДНЫЙ СПЛАВ НА ОСНОВЕ СЕРЕ^ТГ"^' | |
JPS56119747A (en) * | 1980-02-25 | 1981-09-19 | Nippon Telegr & Teleph Corp <Ntt> | Electrical contact material and its manufacture |
JP2834550B2 (ja) * | 1989-08-02 | 1998-12-09 | 古河電気工業株式会社 | 小電流領域用摺動電気接点材料とその製造方法 |
JPH0649269A (ja) * | 1992-03-27 | 1994-02-22 | Mitsubishi Materials Corp | 鱗片状Ag−Pd合金導電性フィラー材及びそれを含む製品 |
JP2996016B2 (ja) * | 1992-07-14 | 1999-12-27 | 三菱マテリアル株式会社 | チップ型電子部品の外部電極 |
JP3369633B2 (ja) * | 1993-05-01 | 2003-01-20 | 太平洋セメント株式会社 | 導体ペースト及びそれを用いたセラミック多層配線基板 |
JP2895793B2 (ja) * | 1995-02-24 | 1999-05-24 | マブチモーター株式会社 | 摺動接点材料及びクラッド複合材ならびにそれらからなるコンミテータ及びそのコンミテータを使用した直流小型モータ |
EP0785572A2 (en) * | 1996-01-22 | 1997-07-23 | Matsushita Electric Industrial Co., Ltd. | Dry etching method for aluminium alloy and etching gas therefor |
US6291137B1 (en) * | 1999-01-20 | 2001-09-18 | Advanced Micro Devices, Inc. | Sidewall formation for sidewall patterning of sub 100 nm structures |
-
2000
- 2000-03-28 JP JP2000092980A patent/JP4247863B2/ja not_active Expired - Lifetime
- 2000-07-07 EP EP00114628A patent/EP1069194B1/en not_active Expired - Lifetime
- 2000-07-07 DE DE60022951T patent/DE60022951T2/de not_active Expired - Lifetime
- 2000-07-07 MX MXPA00006720A patent/MXPA00006720A/es active IP Right Grant
- 2000-07-10 MY MYPI20003147 patent/MY127011A/en unknown
- 2000-07-11 ID IDP20000581A patent/ID26547A/id unknown
- 2000-07-11 US US09/613,892 patent/US6723281B1/en not_active Expired - Lifetime
- 2000-07-11 TW TW089113780A patent/TW457650B/zh not_active IP Right Cessation
- 2000-07-12 CN CNB001204939A patent/CN1165990C/zh not_active Expired - Lifetime
- 2000-07-12 KR KR1020000039875A patent/KR100715405B1/ko active IP Right Grant
- 2000-07-12 CA CA2313767A patent/CA2313767C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA2313767C (en) | 2010-09-28 |
JP4247863B2 (ja) | 2009-04-02 |
DE60022951T2 (de) | 2006-07-20 |
CN1165990C (zh) | 2004-09-08 |
EP1069194B1 (en) | 2005-10-05 |
TW457650B (en) | 2001-10-01 |
MXPA00006720A (es) | 2007-05-08 |
CN1280387A (zh) | 2001-01-17 |
CA2313767A1 (en) | 2001-01-12 |
MY127011A (en) | 2006-11-30 |
EP1069194A1 (en) | 2001-01-17 |
KR100715405B1 (ko) | 2007-05-08 |
KR20010029930A (ko) | 2001-04-16 |
US6723281B1 (en) | 2004-04-20 |
DE60022951D1 (de) | 2005-11-10 |
JP2001192752A (ja) | 2001-07-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ID26547A (id) | Bahan logam untuk onderdil elektronik, onderdil elektronik, aparatus elektronik dan metode pemrosesan bahan logam | |
DE60037088D1 (de) | Datenverarbeitungssystem, datenverarbeitungsverfahren, und datenprozessor | |
DE60039086D1 (de) | Informationsverarbeitungsgerät | |
DE60040754D1 (de) | Postverarbeitungssysteme und -verfahren | |
DE60226403D1 (de) | Informationverarbeitungssystem und -verfahren | |
DE69822528D1 (de) | Vorrichtung zum Transportieren und Bearbeiten von Substraten | |
DE60025136D1 (de) | Empfangsvorrichtung und Empfangsverarbeitungsverfahren | |
SG123604A1 (en) | Substrate processing apparatus and substrate processing method | |
HK1046961A1 (en) | Data processing system and data processing method. | |
DE60132817D1 (de) | Datenverarbeitungssystem und datenprozessor | |
IL159712A0 (en) | Data processing system and method | |
DE60221728D1 (de) | Informationsverarbeitungsgerät und -vorrichtung | |
DE69923659T8 (de) | Datenverarbeitungsvorrichtung und verfahren | |
DE60035605T8 (de) | Bauteilbestuckungsverfahren und -einrichtung | |
DE60129897D1 (de) | Datenverarbeitungsverfahren und Gerät | |
DE10080124T1 (de) | Plasmaverarbeitungssystem und Verfahren | |
DE60043938D1 (de) | Halbleiterscheibepolierverfahren und vorrichtung | |
SG105472A1 (en) | Information processing apparatus having reply priority and method thereof | |
DE69938991D1 (de) | Datenverarbeitung | |
ID24776A (id) | Metoda dan aparatus pemproses data | |
HK1048178A1 (en) | Device for processing data and corresponding method. | |
DE60231025D1 (de) | Datenverarbeitungsgerät und -verfahren | |
DE60031928D1 (de) | Eingabeeinrichtung und Informationsverarbeitungsvorrichtung | |
DE69927571D1 (de) | Datenprozessor und Datenverarbeitungsverfahren | |
ID22760A (id) | Sistem pemrosesan informasi, aparatus pemrosesan informasi dan metode pemrosesan informasi |