HK44186A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
HK44186A
HK44186A HK441/86A HK44186A HK44186A HK 44186 A HK44186 A HK 44186A HK 441/86 A HK441/86 A HK 441/86A HK 44186 A HK44186 A HK 44186A HK 44186 A HK44186 A HK 44186A
Authority
HK
Hong Kong
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
HK441/86A
Other languages
English (en)
Inventor
Nobuyoshi Tanimura
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK44186A publication Critical patent/HK44186A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
HK441/86A 1980-06-04 1986-06-19 Semiconductor memory device HK44186A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7424780A JPS573289A (en) 1980-06-04 1980-06-04 Semiconductor storing circuit device

Publications (1)

Publication Number Publication Date
HK44186A true HK44186A (en) 1986-06-27

Family

ID=13541634

Family Applications (1)

Application Number Title Priority Date Filing Date
HK441/86A HK44186A (en) 1980-06-04 1986-06-19 Semiconductor memory device

Country Status (6)

Country Link
US (1) US4429374A (xx)
JP (1) JPS573289A (xx)
DE (1) DE3122077A1 (xx)
GB (1) GB2078405B (xx)
HK (1) HK44186A (xx)
MY (1) MY8600543A (xx)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972699A (ja) * 1982-10-18 1984-04-24 Mitsubishi Electric Corp 半導体メモリ装置
JPS5972698A (ja) * 1982-10-18 1984-04-24 Mitsubishi Electric Corp 半導体メモリ装置
JPS5990291A (ja) * 1982-11-16 1984-05-24 Nec Corp メモリ
JPS6059588A (ja) * 1983-09-12 1985-04-05 Hitachi Ltd 半導体記憶装置
JPH0795395B2 (ja) 1984-02-13 1995-10-11 株式会社日立製作所 半導体集積回路
DE3546847C2 (de) * 1984-02-13 1995-04-27 Hitachi Ltd Integrierte Halbleiterschaltung
JPH06105554B2 (ja) * 1984-02-15 1994-12-21 株式会社日立製作所 半導体記憶装置
US4695978A (en) * 1984-11-15 1987-09-22 Fujitsu Limited Semiconductor memory device
US4618784A (en) * 1985-01-28 1986-10-21 International Business Machines Corporation High-performance, high-density CMOS decoder/driver circuit
JPS61199297A (ja) * 1985-02-28 1986-09-03 Toshiba Corp 半導体記憶装置
JPS61227289A (ja) * 1985-03-30 1986-10-09 Fujitsu Ltd 半導体記憶装置
US4678941A (en) * 1985-04-25 1987-07-07 International Business Machines Corporation Boost word-line clock and decoder-driver circuits in semiconductor memories
JPS61294562A (ja) * 1985-06-21 1986-12-25 Mitsubishi Electric Corp 半導体記憶装置
JPS6238592A (ja) * 1985-08-14 1987-02-19 Fujitsu Ltd 相補型メモリの行選択線駆動回路
US5051959A (en) * 1985-08-14 1991-09-24 Fujitsu Limited Complementary semiconductor memory device including cell access transistor and word line driving transistor having channels of different conductivity type
JPS62202399A (ja) * 1985-10-04 1987-09-07 Mitsubishi Electric Corp 半導体メモリ
KR890003488B1 (ko) * 1986-06-30 1989-09-22 삼성전자 주식회사 데이터 전송회로
JPH0719473B2 (ja) * 1987-05-21 1995-03-06 株式会社東芝 半導体記憶装置
JP2575449B2 (ja) * 1988-02-18 1997-01-22 株式会社東芝 半導体メモリ装置
JP2525455B2 (ja) * 1988-05-30 1996-08-21 富士通株式会社 半導体メモリ装置
JPH0233799A (ja) * 1988-07-22 1990-02-02 Toshiba Corp 半導体記録装置のデコード方法およびその装置
JPH02185797A (ja) * 1989-01-10 1990-07-20 Nippon Telegr & Teleph Corp <Ntt> アドレスデコーダ
DE69023456T2 (de) * 1989-10-30 1996-06-20 Ibm Bitdekodierungsschema für Speichermatrizen.
US5022010A (en) * 1989-10-30 1991-06-04 International Business Machines Corporation Word decoder for a memory array
US4999815A (en) * 1990-02-13 1991-03-12 International Business Machines Corporation Low power addressing systems
US5015881A (en) * 1990-03-02 1991-05-14 International Business Machines Corp. High speed decoding circuit with improved AND gate
JP3024687B2 (ja) * 1990-06-05 2000-03-21 三菱電機株式会社 半導体記憶装置
JP2717738B2 (ja) * 1991-06-20 1998-02-25 三菱電機株式会社 半導体記憶装置
US5182727A (en) * 1991-10-09 1993-01-26 Mitsubishi Semiconductor America, Inc. Array layout structure for implementing large high-density address decoders for gate array memories
KR930013999A (ko) * 1991-12-31 1993-07-22 정몽헌 그래픽 콘트롤러의 블록별 레지스터 제어회로
JP3093432B2 (ja) * 1992-04-08 2000-10-03 日本電気株式会社 行デコーダ
JPH0689585A (ja) * 1993-01-13 1994-03-29 Hitachi Ltd 半導体記憶装置
US6675361B1 (en) * 1993-12-27 2004-01-06 Hyundai Electronics America Method of constructing an integrated circuit comprising an embedded macro
US5808500A (en) * 1996-06-28 1998-09-15 Cypress Semiconductor Corporation Block architecture semiconductor memory array utilizing non-inverting pass gate local wordline driver
US6141286A (en) * 1998-08-21 2000-10-31 Micron Technology, Inc. Embedded DRAM architecture with local data drivers and programmable number of data read and data write lines
US6442645B1 (en) * 1998-12-04 2002-08-27 Intel Corporation Pre-decode conditional command generation for reduced SDRAM cycle latency
JP4724984B2 (ja) * 2001-08-27 2011-07-13 ミツミ電機株式会社 パワーコントロール回路および電子装置
US9384823B2 (en) * 2014-09-19 2016-07-05 International Business Machines Corporation SRAM array comprising multiple cell cores
CN106238767B (zh) * 2016-08-26 2018-09-21 宁夏共享精密加工有限公司 一种多角度深长孔的加工方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104735A (en) * 1976-09-15 1978-08-01 Siemens Aktiengesellschaft Arrangement for addressing a MOS store
DE2935121A1 (de) * 1978-09-07 1980-03-27 Texas Instruments Inc Schreib/lese-halbleiterspeicher
JPS5570993A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Memory circuit
JPS5951075B2 (ja) * 1980-03-31 1984-12-12 富士通株式会社 半導体記憶装置

Also Published As

Publication number Publication date
DE3122077A1 (de) 1982-04-01
GB2078405A (en) 1982-01-06
JPS573289A (en) 1982-01-08
GB2078405B (en) 1984-10-24
JPH0146947B2 (xx) 1989-10-11
MY8600543A (en) 1986-12-31
US4429374A (en) 1984-01-31

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Legal Events

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PE Patent expired