HK1258711A1 - 浸入式曝光裝置和方法 - Google Patents

浸入式曝光裝置和方法

Info

Publication number
HK1258711A1
HK1258711A1 HK19101112.0A HK19101112A HK1258711A1 HK 1258711 A1 HK1258711 A1 HK 1258711A1 HK 19101112 A HK19101112 A HK 19101112A HK 1258711 A1 HK1258711 A1 HK 1258711A1
Authority
HK
Hong Kong
Prior art keywords
exposure apparatus
immersion exposure
immersion
exposure
Prior art date
Application number
HK19101112.0A
Other languages
English (en)
Inventor
Kazuya Ono
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1258711A1 publication Critical patent/HK1258711A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
HK19101112.0A 2003-10-31 2019-01-22 浸入式曝光裝置和方法 HK1258711A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003371780 2003-10-31

Publications (1)

Publication Number Publication Date
HK1258711A1 true HK1258711A1 (zh) 2019-11-15

Family

ID=34543972

Family Applications (1)

Application Number Title Priority Date Filing Date
HK19101112.0A HK1258711A1 (zh) 2003-10-31 2019-01-22 浸入式曝光裝置和方法

Country Status (8)

Country Link
US (6) US20060285092A1 (zh)
EP (3) EP3064998B1 (zh)
JP (4) JP4513747B2 (zh)
KR (1) KR101117429B1 (zh)
CN (1) CN100461336C (zh)
HK (1) HK1258711A1 (zh)
TW (1) TWI373788B (zh)
WO (1) WO2005043607A1 (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101117429B1 (ko) * 2003-10-31 2012-04-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
US20070201010A1 (en) * 2004-03-25 2007-08-30 Nikon Corporation Exposure Apparatus, Exposure Method, And Device Manufacturing Method
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005117075A1 (ja) * 2004-05-26 2005-12-08 Nikon Corporation 較正方法、予測方法、露光方法、反射率較正方法及び反射率計測方法、露光装置、並びにデバイス製造方法
KR101257960B1 (ko) * 2004-06-04 2013-04-24 칼 짜이스 에스엠테 게엠베하 광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템
CN103558737A (zh) 2004-06-09 2014-02-05 尼康股份有限公司 基板保持装置、具备其之曝光装置、方法
JP5353005B2 (ja) * 2005-07-11 2013-11-27 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2008059916A1 (fr) * 2006-11-15 2008-05-22 Nikon Corporation Appareil et procédé d'exposition et procédé de fabrication de dispositif
US20080158531A1 (en) * 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2010243413A (ja) * 2009-04-08 2010-10-28 Canon Inc 測定装置、露光装置及びデバイスの製造方法
NL2005528A (en) 2009-12-02 2011-06-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US9504376B2 (en) * 2009-12-22 2016-11-29 Amo Wavefront Sciences, Llc Optical diagnosis using measurement sequence
CN102566293B (zh) * 2010-12-30 2015-04-15 上海微电子装备有限公司 二维长行程工作台运动系统
CN103926805A (zh) * 2014-04-28 2014-07-16 清华大学 一种平面电动机驱动的粗微动一体掩模台
CN104122759A (zh) * 2014-04-28 2014-10-29 清华大学 一种平面电动机驱动的磁悬浮粗微动一体掩模台
CN108983552B (zh) * 2017-05-31 2020-01-24 上海微电子装备（集团）股份有限公司 一种移入移出机构及光刻机工件台移入移出装置
DE102017216679A1 (de) * 2017-09-20 2019-03-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
CN109682951B (zh) * 2019-02-20 2023-09-19 中国水利水电科学研究院 一种磁悬浮离心机
CN110013919B (zh) * 2019-03-11 2023-10-17 中国水利水电科学研究院 一种真空管道磁悬浮岩土离心机

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
CA1165506A (en) * 1981-12-07 1984-04-17 Ervin I. Szabo Method of manufacturing a foundry mould mix containing binder components and mould binder components therefor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH0634335A (ja) * 1992-07-17 1994-02-08 Olympus Optical Co Ltd シェアリング干渉方法およびラジアルシェア素子
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH09219354A (ja) 1996-02-13 1997-08-19 Nikon Corp 位置検出装置及び該装置を備えた露光装置
KR970062816A (ko) * 1996-02-13 1997-09-12 박병재 헤드 램프를 이용한 엔진룸 조사 장치
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
CN1244018C (zh) 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands Bv In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1145842A (ja) * 1997-07-24 1999-02-16 Nikon Corp 投影露光装置と露光方法、該露光装置の調整方法、及び回路デバイス製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP4505989B2 (ja) * 1998-05-19 2010-07-21 株式会社ニコン 収差測定装置並びに測定方法及び該装置を備える投影露光装置並びに該方法を用いるデバイス製造方法、露光方法
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2001338868A (ja) 2000-03-24 2001-12-07 Nikon Corp 照度計測装置及び露光装置
JP2002093695A (ja) * 2000-05-02 2002-03-29 Canon Inc 投影露光装置
JP2002156280A (ja) * 2000-08-15 2002-05-31 Nikon Corp 照度計測装置、露光装置、及び露光方法
JP2002170754A (ja) * 2000-11-30 2002-06-14 Nikon Corp 露光装置、光学特性検出方法及び露光方法
AU2002222663A1 (en) * 2000-12-18 2002-07-01 Nikon Corporation Wavefront measuring apparatus and its usage, method and apparatus for determining focusing characteristics, method and apparatus for correcting focusing characteristics, method for managing focusing characteristics, and method and apparatusfor exposure
EP1347501A4 (en) * 2000-12-22 2006-06-21 Nikon Corp WAVE FRONT ABERRATION MEASURING INSTRUMENT, WAVE FRONT ABERRATION MEASUREMENT METHOD, EXPOSURE APPARATUS, AND METHOD FOR MANUFACTURING MICRODISPOSITIVE DEVICE
JP2002198279A (ja) * 2000-12-25 2002-07-12 Nikon Corp 位置検出方法、光学特性測定方法、光学特性測定装置、露光装置、及びデバイス製造方法
JP2002202221A (ja) 2000-12-28 2002-07-19 Nikon Corp 位置検出方法、位置検出装置、光学特性測定方法、光学特性測定装置、露光装置、及びデバイス製造方法
WO2002063664A1 (fr) * 2001-02-06 2002-08-15 Nikon Corporation Systeme et procede d'exposition et procede de production de dispositif
EP1231514A1 (en) * 2001-02-13 2002-08-14 Asm Lithography B.V. Measurement of wavefront aberrations in a lithographic projection apparatus
TW591694B (en) * 2001-02-13 2004-06-11 Nikon Corp Specification determining method, making method and adjusting method of projection optical system, exposure apparatus and making method thereof, and computer system
JP2002250677A (ja) * 2001-02-23 2002-09-06 Nikon Corp 波面収差測定方法、波面収差測定装置、露光装置、デバイス製造方法、及びデバイス
JP4147574B2 (ja) 2001-05-10 2008-09-10 株式会社ニコン 波面収差計測方法、投影光学系の調整方法及び露光方法、並びに露光装置の製造方法
JP2003168037A (ja) 2001-12-04 2003-06-13 Nec Corp 予約システムとその予約方法及びそのコンピュータプログラム、端末装置
JP2003173958A (ja) * 2001-12-06 2003-06-20 Nikon Corp 露光方法及び露光装置
KR100927560B1 (ko) 2002-01-29 2009-11-23 가부시키가이샤 니콘 이미지 형성 상태 조정 시스템, 노광 방법 및 노광 장치, 그리고 프로그램 및 정보 기록 매체
CN100462844C (zh) 2002-08-23 2009-02-18 株式会社尼康 投影光学系统、微影方法、曝光装置及使用此装置的方法
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101349876B (zh) * 2002-11-12 2010-12-01 Asml荷兰有限公司 光刻装置和器件制造方法
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN100568101C (zh) * 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
SG121818A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1429188B1 (en) * 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
JP4070631B2 (ja) * 2003-02-21 2008-04-02 富士通株式会社 バーコード読取装置およびバーコード読取方法
TWI474380B (zh) 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7213963B2 (en) * 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005005521A (ja) 2003-06-12 2005-01-06 Nikon Corp 露光装置、露光方法、および偏光状態測定装置
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
WO2005010611A2 (en) * 2003-07-08 2005-02-03 Nikon Corporation Wafer table for immersion lithography
EP1500982A1 (en) 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3346485A1 (en) * 2003-07-25 2018-07-11 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101323396B1 (ko) * 2003-09-29 2013-10-29 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
KR101117429B1 (ko) 2003-10-31 2012-04-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005191393A (ja) 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置

Also Published As

Publication number Publication date
JP2014017521A (ja) 2014-01-30
US8928856B2 (en) 2015-01-06
EP1679737A1 (en) 2006-07-12
US20170108779A1 (en) 2017-04-20
JPWO2005043607A1 (ja) 2007-05-10
US20180348642A1 (en) 2018-12-06
CN1875460A (zh) 2006-12-06
TW200518190A (en) 2005-06-01
WO2005043607A1 (ja) 2005-05-12
KR101117429B1 (ko) 2012-04-16
US20180059549A1 (en) 2018-03-01
US9829801B2 (en) 2017-11-28
US20060285092A1 (en) 2006-12-21
CN100461336C (zh) 2009-02-11
JP4513747B2 (ja) 2010-07-28
EP1679737A4 (en) 2008-01-30
KR20060128876A (ko) 2006-12-14
EP3064998B1 (en) 2018-03-14
JP2010135832A (ja) 2010-06-17
US10048597B2 (en) 2018-08-14
EP3064998A1 (en) 2016-09-07
US20150077730A1 (en) 2015-03-19
JP2010135833A (ja) 2010-06-17
US20100103396A1 (en) 2010-04-29
TWI373788B (en) 2012-10-01
US9563133B2 (en) 2017-02-07
EP3392713A1 (en) 2018-10-24

Similar Documents

Publication Publication Date Title
HK1258711A1 (zh) 浸入式曝光裝置和方法
HK1258606A1 (zh) 曝光設備以及裝置製造方法
HK1253949A1 (zh) 液體沉浸曝光方法和裝置，以及器件製造方法
IL215923A (en) Exposure device and method
HK1089292A1 (zh) 曝光裝置和曝光方法
HK1214367A1 (zh) 爲浸沒光刻提供流體的裝置和方法
HK1204091A1 (zh) 曝光裝置和設備製造方法
HK1200922A1 (zh) 曝光裝置、器件製造方法
GB2398312B (en) Apparatus and method
GB2397762B (en) Apparatus and method for hair-thickening
TWI368932B (en) Exposure apparatus and method
GB2407857B (en) Apparatus and method
GB0305023D0 (en) Apparatus and method
GB0327981D0 (en) De-blistering apparatus and method
GB0315475D0 (en) Apparatus and method
GB2402865B (en) De-Infestation method and apparatus
GB0311049D0 (en) Apparatus and method
GB0303973D0 (en) Method and apparatus
GB0328090D0 (en) Apparatus and method
GB2404238B (en) Apparatus and method
GB0407679D0 (en) Method and apparatus
GB0313439D0 (en) Apparatus and method
GB2409367B (en) Method and apparatus
GB0303397D0 (en) Electro-plating method and apparatus
GB0315932D0 (en) Apparatus and method