HK1203902A1 - High quality large scale single and multilayer graphene production by chemical vapor deposition - Google Patents

High quality large scale single and multilayer graphene production by chemical vapor deposition

Info

Publication number
HK1203902A1
HK1203902A1 HK15104557.0A HK15104557A HK1203902A1 HK 1203902 A1 HK1203902 A1 HK 1203902A1 HK 15104557 A HK15104557 A HK 15104557A HK 1203902 A1 HK1203902 A1 HK 1203902A1
Authority
HK
Hong Kong
Prior art keywords
vapor deposition
chemical vapor
high quality
large scale
multilayer graphene
Prior art date
Application number
HK15104557.0A
Other languages
English (en)
Chinese (zh)
Inventor
Ivan V Vlassiouk
Sergei N Smirnov
William H Peter
Adrian S Sabau
Sheng Dai
Pasquale F Fulvio
Ilia N Ivanov
Nickolay V Lavrik
Panagiotis G Datskos
Original Assignee
Ut Battelle Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ut Battelle Llc filed Critical Ut Battelle Llc
Publication of HK1203902A1 publication Critical patent/HK1203902A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/02—Single layer graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/32—Size or surface area
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
HK15104557.0A 2012-01-06 2015-05-14 High quality large scale single and multilayer graphene production by chemical vapor deposition HK1203902A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261583638P 2012-01-06 2012-01-06
PCT/US2013/020378 WO2013103886A1 (en) 2012-01-06 2013-01-04 High quality large scale single and multilayer graphene production by chemical vapor deposition

Publications (1)

Publication Number Publication Date
HK1203902A1 true HK1203902A1 (en) 2015-11-06

Family

ID=48743087

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15104557.0A HK1203902A1 (en) 2012-01-06 2015-05-14 High quality large scale single and multilayer graphene production by chemical vapor deposition

Country Status (8)

Country Link
US (1) US10023468B2 (ko)
JP (1) JP6355561B2 (ko)
KR (1) KR102088540B1 (ko)
CN (1) CN104159736B (ko)
DE (1) DE112013000502T5 (ko)
GB (1) GB2516372B (ko)
HK (1) HK1203902A1 (ko)
WO (1) WO2013103886A1 (ko)

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TWI434949B (zh) * 2012-03-14 2014-04-21 Nat Univ Tsing Hua 化學氣相沈積生成石墨烯之方法
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US10370774B2 (en) * 2013-01-09 2019-08-06 The Regents Of The University Of California Chemical vapor deposition growth of graphene
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TW201504140A (zh) 2013-03-12 2015-02-01 Lockheed Corp 形成具有均勻孔尺寸之多孔石墨烯之方法
TWI503276B (zh) * 2013-03-13 2015-10-11 Academia Sinica 石墨烯薄膜及電晶體的石墨烯通道之製備方法
US9458020B2 (en) * 2013-05-06 2016-10-04 Centre National De La Recherche Scientifique Process and device for forming a graphene layer
US9572918B2 (en) 2013-06-21 2017-02-21 Lockheed Martin Corporation Graphene-based filter for isolating a substance from blood
US20150050482A1 (en) * 2013-08-14 2015-02-19 Rodney S. Ruoff Graphene synthesis by suppressing evaporative substrate loss during low pressure chemical vapor deposition
WO2015116857A2 (en) 2014-01-31 2015-08-06 Lockheed Martin Corporation Processes for forming composite structures with a two-dimensional material using a porous, non-sacrificial supporting layer
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WO2017180133A1 (en) 2016-04-14 2017-10-19 Lockheed Martin Corporation Methods for in situ monitoring and control of defect formation or healing
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WO2017180134A1 (en) * 2016-04-14 2017-10-19 Lockheed Martin Corporation Methods for in vivo and in vitro use of graphene and other two-dimensional materials
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CL2016001858A1 (es) * 2016-07-21 2017-02-17 Univ Técnica Federico Santa Mar+Ia Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado
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CN108034930A (zh) * 2017-11-22 2018-05-15 华中科技大学 一种石墨烯/金属复合材料及三维石墨烯的制备方法
KR102271430B1 (ko) * 2018-04-27 2021-07-01 한국과학기술연구원 나노홀 그래핀 시트가 코팅된 연료전지용 복합 고분자 전해질막 및 그 제조 방법
KR102547500B1 (ko) * 2018-05-18 2023-06-26 성균관대학교산학협력단 그래핀 코팅 금속 나노와이어의 제조방법, 이에 의해 제조된 그래핀 코팅 금속 나노와이어를 포함하는 투명전극 및 반도체 소자
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CN109336096B (zh) * 2018-10-19 2023-09-26 深圳市纳设智能装备有限公司 一种开放式连续生长碳纳米材料的设备及制备方法
CN109437169B (zh) * 2018-12-04 2020-06-23 中国电子科技集团公司第十三研究所 制备超低褶皱密度石墨烯材料的方法
CN109650383A (zh) * 2018-12-25 2019-04-19 中国科学院上海微系统与信息技术研究所 一种石墨烯的制备方法
CN109537043B (zh) * 2018-12-28 2021-03-12 北京大学 控制晶面暴露取向的单晶铜箔的制备方法
CN110668432B (zh) * 2019-09-27 2021-05-14 北京碳垣新材料科技有限公司 以金属粉末液相为基底生长石墨烯的装置
CN110803696A (zh) * 2019-10-10 2020-02-18 广东墨睿科技有限公司 一种利用化学气相沉积法一步制成石墨烯粉末的方法
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Also Published As

Publication number Publication date
CN104159736A (zh) 2014-11-19
US20130174968A1 (en) 2013-07-11
KR20140128952A (ko) 2014-11-06
CN104159736B (zh) 2016-11-09
KR102088540B1 (ko) 2020-03-12
GB2516372B (en) 2021-01-13
JP6355561B2 (ja) 2018-07-11
DE112013000502T5 (de) 2015-01-08
GB2516372A (en) 2015-01-21
US10023468B2 (en) 2018-07-17
GB201411990D0 (en) 2014-08-20
JP2015507599A (ja) 2015-03-12
WO2013103886A1 (en) 2013-07-11

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20220104