HK1167743A1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
HK1167743A1
HK1167743A1 HK12108411.0A HK12108411A HK1167743A1 HK 1167743 A1 HK1167743 A1 HK 1167743A1 HK 12108411 A HK12108411 A HK 12108411A HK 1167743 A1 HK1167743 A1 HK 1167743A1
Authority
HK
Hong Kong
Prior art keywords
light emitting
emitting device
semiconductor light
semiconductor
light
Prior art date
Application number
HK12108411.0A
Other languages
English (en)
Inventor
Akihiro Kojima
Hiroshi Koizumi
Yoshiaki Sugizaki
Tomomichi Naka
Yasuhide Okada
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of HK1167743A1 publication Critical patent/HK1167743A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
HK12108411.0A 2010-06-04 2012-08-28 Semiconductor light emitting device HK1167743A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010128481A JP5337106B2 (ja) 2010-06-04 2010-06-04 半導体発光装置

Publications (1)

Publication Number Publication Date
HK1167743A1 true HK1167743A1 (en) 2012-12-07

Family

ID=44148643

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12108411.0A HK1167743A1 (en) 2010-06-04 2012-08-28 Semiconductor light emitting device

Country Status (5)

Country Link
US (1) US8368089B2 (zh)
EP (2) EP2393133A1 (zh)
JP (1) JP5337106B2 (zh)
HK (1) HK1167743A1 (zh)
TW (1) TWI429112B (zh)

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US8563963B2 (en) * 2009-02-06 2013-10-22 Evergrand Holdings Limited Light-emitting diode die packages and methods for producing same
CN103354955B (zh) * 2010-12-28 2016-08-10 日亚化学工业株式会社 半导体发光装置
JP5537446B2 (ja) 2011-01-14 2014-07-02 株式会社東芝 発光装置、発光モジュール、発光装置の製造方法
JP5603793B2 (ja) 2011-02-09 2014-10-08 株式会社東芝 半導体発光装置
JP5603813B2 (ja) 2011-03-15 2014-10-08 株式会社東芝 半導体発光装置及び発光装置
JP5535114B2 (ja) 2011-03-25 2014-07-02 株式会社東芝 発光装置、発光モジュール、発光装置の製造方法
JP5642623B2 (ja) 2011-05-17 2014-12-17 株式会社東芝 半導体発光装置
JP5662277B2 (ja) 2011-08-08 2015-01-28 株式会社東芝 半導体発光装置及び発光モジュール
JP2013065726A (ja) 2011-09-16 2013-04-11 Toshiba Corp 半導体発光装置及びその製造方法
DE102012101409A1 (de) 2011-12-23 2013-06-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP2013197309A (ja) * 2012-03-19 2013-09-30 Toshiba Corp 発光装置
JP5684751B2 (ja) 2012-03-23 2015-03-18 株式会社東芝 半導体発光素子及びその製造方法
CN109994586B (zh) * 2012-03-30 2022-06-03 亮锐控股有限公司 密封的半导体发光器件
JP2013232479A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体発光装置
JP5989420B2 (ja) * 2012-06-28 2016-09-07 株式会社東芝 半導体発光装置
JP2014139998A (ja) * 2013-01-21 2014-07-31 Toshiba Corp 半導体発光装置
JP2014157991A (ja) * 2013-02-18 2014-08-28 Toshiba Corp 半導体発光装置及びその製造方法
JP6394052B2 (ja) * 2013-05-13 2018-09-26 日亜化学工業株式会社 発光装置及びその製造方法
TWI540766B (zh) * 2013-07-10 2016-07-01 隆達電子股份有限公司 發光二極體封裝結構
WO2015008243A1 (en) * 2013-07-19 2015-01-22 Koninklijke Philips N.V. Pc led with optical element and without substrate carrier
JP6045999B2 (ja) * 2013-07-31 2016-12-14 株式会社東芝 半導体発光装置及びその製造方法
JP6306308B2 (ja) * 2013-09-19 2018-04-04 株式会社東芝 半導体発光装置
JP2015173142A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光装置
JP6387656B2 (ja) * 2014-04-02 2018-09-12 日亜化学工業株式会社 発光素子の製造方法
DE102015107660A1 (de) * 2015-05-15 2016-11-17 Osram Opto Semiconductors Gmbh Elektronisches Bauteil sowie Verfahren zur Herstellung eines elektronischen Bauteils
JP2015216401A (ja) * 2015-07-31 2015-12-03 株式会社東芝 半導体発光装置
DE102015120642A1 (de) * 2015-11-27 2017-06-01 Osram Opto Semiconductors Gmbh Vorrichtung mit zumindest einem optoelektronischen Halbleiterbauelement
JP6711021B2 (ja) 2016-03-02 2020-06-17 日亜化学工業株式会社 発光装置及びその製造方法
TWI736692B (zh) * 2016-10-19 2021-08-21 新世紀光電股份有限公司 發光裝置及其製作方法
TWI664747B (zh) * 2017-03-27 2019-07-01 英屬開曼群島商錼創科技股份有限公司 圖案化基板與發光二極體晶圓
TWI689092B (zh) * 2017-06-09 2020-03-21 美商晶典有限公司 具有透光基材之微發光二極體顯示模組及其製造方法
JP6485503B2 (ja) * 2017-08-01 2019-03-20 日亜化学工業株式会社 発光装置の製造方法
US10615305B1 (en) * 2018-04-20 2020-04-07 Facebook Technologies, Llc Self-alignment of micro light emitting diode using planarization
FR3087580B1 (fr) * 2018-10-23 2020-12-18 Aledia Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions
WO2021102660A1 (zh) * 2019-11-26 2021-06-03 重庆康佳光电技术研究院有限公司 一种发光二极体组件及其制备方法、显示器的制备方法
CN113921679B (zh) * 2020-07-08 2024-09-17 隆达电子股份有限公司 发光装置
US11804416B2 (en) * 2020-09-08 2023-10-31 UTAC Headquarters Pte. Ltd. Semiconductor device and method of forming protective layer around cavity of semiconductor die

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JP3241976B2 (ja) 1995-10-16 2001-12-25 株式会社東芝 半導体発光素子
US6331450B1 (en) 1998-12-22 2001-12-18 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device using group III nitride compound
US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP2002170989A (ja) 2000-12-04 2002-06-14 Sharp Corp 窒化物系化合物半導体発光素子
MY131962A (en) 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
JP4115197B2 (ja) * 2002-08-02 2008-07-09 株式会社沖デジタルイメージング 発光素子アレイ
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP4976849B2 (ja) 2004-07-12 2012-07-18 ローム株式会社 半導体発光素子
US7710016B2 (en) * 2005-02-18 2010-05-04 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
JP4908041B2 (ja) * 2006-03-31 2012-04-04 株式会社沖データ 発光ダイオードアレイ、ｌｅｄヘッド及び画像記録装置
JP4874005B2 (ja) 2006-06-09 2012-02-08 富士通セミコンダクター株式会社 半導体装置、その製造方法及びその実装方法
JP5212777B2 (ja) 2007-11-28 2013-06-19 スタンレー電気株式会社 半導体発光装置及び照明装置
JP4724222B2 (ja) 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
JP5349260B2 (ja) 2009-11-19 2013-11-20 株式会社東芝 半導体発光装置及びその製造方法
JP5101650B2 (ja) 2010-03-25 2012-12-19 株式会社東芝 半導体発光装置及びその製造方法

Also Published As

Publication number Publication date
EP2423988B1 (en) 2012-12-12
JP2011254033A (ja) 2011-12-15
EP2423988A1 (en) 2012-02-29
TWI429112B (zh) 2014-03-01
EP2393133A1 (en) 2011-12-07
US8368089B2 (en) 2013-02-05
TW201145602A (en) 2011-12-16
JP5337106B2 (ja) 2013-11-06
US20110297969A1 (en) 2011-12-08

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20161005