FR3087580B1 - Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions - Google Patents

Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions Download PDF

Info

Publication number
FR3087580B1
FR3087580B1 FR1859791A FR1859791A FR3087580B1 FR 3087580 B1 FR3087580 B1 FR 3087580B1 FR 1859791 A FR1859791 A FR 1859791A FR 1859791 A FR1859791 A FR 1859791A FR 3087580 B1 FR3087580 B1 FR 3087580B1
Authority
FR
France
Prior art keywords
zones
optoelectronic device
formation
forming
homogenous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1859791A
Other languages
English (en)
Other versions
FR3087580A1 (fr
Inventor
Pierre Tchoulfian
Benoit Amstatt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aledia filed Critical Aledia
Priority to FR1859791A priority Critical patent/FR3087580B1/fr
Priority to PCT/FR2019/052464 priority patent/WO2020084226A1/fr
Priority to US17/288,388 priority patent/US11894413B2/en
Priority to EP19808634.0A priority patent/EP3871273A1/fr
Publication of FR3087580A1 publication Critical patent/FR3087580A1/fr
Application granted granted Critical
Publication of FR3087580B1 publication Critical patent/FR3087580B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)

Abstract

Procédé de fabrication d'un dispositif optoélectronique (10) comportant les étapes de formation d'un substrat (11) présentant une face support (111); formation d'une première série de premières zones (131, 131a) adaptées à la formation de tout ou partie de diodes électroluminescentes (13), formation d'une deuxième série de secondes zones (151, 151a) sur la face support (111), adaptées à la formation d'élément de parois de confinement lumineux (152) apte à former une paroi de confinement lumineux (15), les deuxièmes zones (151, 151a) étant distinctes des premières zones (131, 131a), les deuxièmes zones (151, 151a) définissant entre elles des zones de sous-pixel (14); formation, à partir des premières zones (131, 131a), de diodes électroluminescentes (13); formation, par la même technique qu'à l'étape précédente, à partir des secondes zones (151, 151a), d'éléments de parois de confinement lumineux (152), concomitamment à tout ou partie des diodes électroluminescentes (13) formées à l'étape précédente.
FR1859791A 2018-10-23 2018-10-23 Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions Active FR3087580B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1859791A FR3087580B1 (fr) 2018-10-23 2018-10-23 Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions
PCT/FR2019/052464 WO2020084226A1 (fr) 2018-10-23 2019-10-17 Procédé de réalisation d'un dispositif optoélectronique comprenant des diodes électroluminescentes homogènes en dimensions
US17/288,388 US11894413B2 (en) 2018-10-23 2019-10-17 Method for producing an optoelectronic device comprising light-emitting diodes which are homogeneous in dimensions
EP19808634.0A EP3871273A1 (fr) 2018-10-23 2019-10-17 Procédé de réalisation d'un dispositif optoélectronique comprenant des diodes électroluminescentes homogènes en dimensions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1859791 2018-10-23
FR1859791A FR3087580B1 (fr) 2018-10-23 2018-10-23 Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions

Publications (2)

Publication Number Publication Date
FR3087580A1 FR3087580A1 (fr) 2020-04-24
FR3087580B1 true FR3087580B1 (fr) 2020-12-18

Family

ID=67956809

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1859791A Active FR3087580B1 (fr) 2018-10-23 2018-10-23 Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions

Country Status (4)

Country Link
US (1) US11894413B2 (fr)
EP (1) EP3871273A1 (fr)
FR (1) FR3087580B1 (fr)
WO (1) WO2020084226A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3111235A1 (fr) * 2020-06-04 2021-12-10 Aledia Dispositif optoélectronique pour affichage lumineux à parois de confinement lumineux conductrices et procédé de fabrication

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224469A (ja) * 1993-01-26 1994-08-12 Kyocera Corp 半導体発光装置
WO2003012884A1 (fr) * 2001-08-01 2003-02-13 Nam-Young Kim Systeme d'affichage
TWI492422B (zh) * 2010-03-18 2015-07-11 Everlight Electronics Co Ltd 具有螢光粉層之發光二極體晶片的製作方法
JP5337106B2 (ja) * 2010-06-04 2013-11-06 株式会社東芝 半導体発光装置
FR2992465B1 (fr) * 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
FR3031238B1 (fr) 2014-12-30 2016-12-30 Aledia Dispositif optoelectronique a diodes electroluminescentes
US10700120B2 (en) * 2015-01-23 2020-06-30 Vuereal Inc. Micro device integration into system substrate
US9368549B1 (en) * 2015-09-02 2016-06-14 Nthdegree Technologies Worldwide Inc. Printed mesh defining pixel areas for printed inorganic LED dies
DE102015119353B4 (de) * 2015-11-10 2024-01-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
FR3053530B1 (fr) 2016-06-30 2018-07-27 Aledia Dispositif optoelectronique a pixels a contraste et luminance ameliores
US10468472B2 (en) * 2016-11-25 2019-11-05 Vuereal Inc. Integration of micro-devices into system substrate
US20180287027A1 (en) * 2017-03-30 2018-10-04 Vuereal Inc. Vertical solid-state devices
US10615305B1 (en) * 2018-04-20 2020-04-07 Facebook Technologies, Llc Self-alignment of micro light emitting diode using planarization

Also Published As

Publication number Publication date
US11894413B2 (en) 2024-02-06
WO2020084226A1 (fr) 2020-04-30
EP3871273A1 (fr) 2021-09-01
US20210384253A1 (en) 2021-12-09
FR3087580A1 (fr) 2020-04-24

Similar Documents

Publication Publication Date Title
AU2021290251A8 (en) Metasurfaces with asymmetric gratings for redirecting light and methods for fabricating
EP3875850A3 (fr) Dispositif électroluminescent
CN101688645B (zh) 导光板的制造方法、导光板以及使用该导光板的发光牌
WO2018114974A3 (fr) Dispositif et procédé de fabrication de plaques bipolaires
TW200707795A (en) Systems and methods for removing operating heat from a light emitting diode
WO2006076152A3 (fr) Diode electroluminescente a substrat metallique conducteur
WO2007016363A3 (fr) Éléments optiques lenticulaires à forme libre et leur application à des condensateurs et projecteurs
TW200707564A (en) Light-emitting diode, integrated light-emitting diode and production method thereof, nitride-based III-v compound semiconductor deposition method, light source cell unit, light emitting diode backlight, light emitting diode display, and electronic device
FR3061358B1 (fr) Procede de fabrication d’un dispositif optoelectronique comportant des plots photoluminescents de photoresine
ATE461805T1 (de) Mehrschichtkörper mit mikrolinsen
TW200710455A (en) Optical substrate, manufacturing method thereof, planar lighting device and electrooptical device
TW200622965A (en) Sealing glass substrate for organic el and a method of manufacturing an organic el display
FR3081155B1 (fr) Procede de fabrication d'un composant electronique a multiples ilots quantiques
FR3054292B1 (fr) Module lumineux de vehicule terrestre
TW200604672A (en) Light-guide plate, surface light emitting device using light-guide plate and method of manufacturing light-guide plate
CN102287714A (zh) 具有光栅的背光系统
FR3087580B1 (fr) Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions
FR3031519B1 (fr) Composition a base de terpolymere electroactif
FR3064712B1 (fr) Procede de fabrication d’un agencement fluidique et agencement fluidique associe
TW200722682A (en) Light guide plate and method for manufactureing the light guide plate
FR3098128B1 (fr) Dispositif microfluidique comportant une microgoutte présentant une matrice sol-gel.
TW200629565A (en) Optical mask and manufacturing method of thin film transistor array panel using the optical mask
TW200744133A (en) Method of manufacturing semiconductor device
CN102717195A (zh) 一种双波长激光切割钢化玻璃的方法及其装置
FR3091022B1 (fr) Procede de fabrication de structures optoelectroniques pourvues de diodes electroluminescentes coplanaires

Legal Events

Date Code Title Description
PLFP Fee payment
PLSC Publication of the preliminary search report

Effective date: 20200424

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6