HK1159305A1 - 8-bit or more a/d conversion for the determination of a nand memory cell value - Google Patents
8-bit or more a/d conversion for the determination of a nand memory cell valueInfo
- Publication number
- HK1159305A1 HK1159305A1 HK11113234.6A HK11113234A HK1159305A1 HK 1159305 A1 HK1159305 A1 HK 1159305A1 HK 11113234 A HK11113234 A HK 11113234A HK 1159305 A1 HK1159305 A1 HK 1159305A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- data values
- memory cells
- memory cell
- bit
- determination
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 238000001514 detection method Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80035706P | 2006-05-15 | 2006-05-15 | |
US11/694,739 US7639542B2 (en) | 2006-05-15 | 2007-03-30 | Maintenance operations for multi-level data storage cells |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1159305A1 true HK1159305A1 (en) | 2012-07-27 |
Family
ID=38684942
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09106767.9A HK1127155A1 (en) | 2006-05-15 | 2009-07-23 | Maintenance operations for multi-level data storage cells |
HK11113234.6A HK1159305A1 (en) | 2006-05-15 | 2011-12-07 | 8-bit or more a/d conversion for the determination of a nand memory cell value |
HK11113285.4A HK1159307A1 (en) | 2006-05-15 | 2011-12-08 | Maintenance operations for multi-level data storage cells |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09106767.9A HK1127155A1 (en) | 2006-05-15 | 2009-07-23 | Maintenance operations for multi-level data storage cells |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK11113285.4A HK1159307A1 (en) | 2006-05-15 | 2011-12-08 | Maintenance operations for multi-level data storage cells |
Country Status (10)
Country | Link |
---|---|
US (3) | US7639542B2 (xx) |
EP (10) | EP2022058B1 (xx) |
JP (1) | JP5358431B2 (xx) |
KR (16) | KR101206714B1 (xx) |
CN (3) | CN102768853B (xx) |
AT (2) | ATE475183T1 (xx) |
DE (1) | DE602007007938D1 (xx) |
ES (2) | ES2383588T3 (xx) |
HK (3) | HK1127155A1 (xx) |
WO (1) | WO2007134277A2 (xx) |
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