HK1147781A1 - Optical thin film deposition device and optical thin film fabrication method - Google Patents

Optical thin film deposition device and optical thin film fabrication method

Info

Publication number
HK1147781A1
HK1147781A1 HK11101970.9A HK11101970A HK1147781A1 HK 1147781 A1 HK1147781 A1 HK 1147781A1 HK 11101970 A HK11101970 A HK 11101970A HK 1147781 A1 HK1147781 A1 HK 1147781A1
Authority
HK
Hong Kong
Prior art keywords
thin film
optical thin
fabrication method
deposition device
film deposition
Prior art date
Application number
HK11101970.9A
Other languages
English (en)
Inventor
Ekishu Nagae
Yousong Jiang
Ichiro Shiono
Tadayuki Shimizu
Tatsuya Hayashi
Makoto Furukawa
Takanori Murata
Original Assignee
Shincron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shincron Co Ltd filed Critical Shincron Co Ltd
Publication of HK1147781A1 publication Critical patent/HK1147781A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating
HK11101970.9A 2008-08-15 2011-02-28 Optical thin film deposition device and optical thin film fabrication method HK1147781A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2008/064647 WO2010018639A1 (ja) 2008-08-15 2008-08-15 蒸着装置及び薄膜デバイスの製造方法
PCT/JP2009/064403 WO2010018876A1 (ja) 2008-08-15 2009-08-17 光学薄膜蒸着装置及び光学薄膜の製造方法

Publications (1)

Publication Number Publication Date
HK1147781A1 true HK1147781A1 (en) 2011-08-19

Family

ID=41668793

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11101970.9A HK1147781A1 (en) 2008-08-15 2011-02-28 Optical thin film deposition device and optical thin film fabrication method

Country Status (8)

Country Link
US (2) US8826856B2 (xx)
EP (1) EP2319951B1 (xx)
JP (2) JPWO2010018639A1 (xx)
KR (1) KR100984221B1 (xx)
CN (1) CN101861408B (xx)
HK (1) HK1147781A1 (xx)
TW (1) TW201006943A (xx)
WO (2) WO2010018639A1 (xx)

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JPWO2010018639A1 (ja) * 2008-08-15 2012-01-26 株式会社シンクロン 蒸着装置及び薄膜デバイスの製造方法
CN102084025B (zh) * 2008-09-05 2013-12-04 新柯隆株式会社 成膜方法以及防油性基材
KR102407182B1 (ko) * 2011-05-31 2022-06-10 클라렌슈 피티와이 리미티드 광선 요법 장치
JPWO2013042247A1 (ja) * 2011-09-22 2015-03-26 株式会社シンクロン 薄膜形成装置
WO2013042247A1 (ja) * 2011-09-22 2013-03-28 株式会社シンクロン 薄膜形成装置
CN103014617B (zh) 2011-09-22 2014-05-14 株式会社新柯隆 薄膜形成装置
JP5769857B2 (ja) * 2011-09-30 2015-08-26 株式会社シンクロン 成膜方法及び成膜装置
WO2013046440A1 (ja) * 2011-09-30 2013-04-04 株式会社シンクロン 成膜方法及び成膜装置
JP5638147B2 (ja) * 2011-09-30 2014-12-10 株式会社シンクロン 成膜方法及び成膜装置
WO2013047605A1 (ja) * 2011-09-30 2013-04-04 株式会社シンクロン 成膜方法及び成膜装置
CN103668075B (zh) * 2012-09-05 2015-11-11 财团法人工业技术研究院 具有弧形载盘的旋转定位装置、自动取放系统及其操作方法
US9373534B2 (en) 2012-09-05 2016-06-21 Industrial Technology Research Institute Rotary positioning apparatus with dome carrier, automatic pick-and-place system, and operating method thereof
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WO2016003400A1 (en) * 2014-06-30 2016-01-07 Halliburton Energy Services, Inc. System and method for deposition of integrated computational elements (ice) using a translation stage
MX2016015360A (es) 2014-06-30 2017-03-03 Halliburton Energy Services Inc Deposicion de elementos informaticos integrados (ice) mediante una etapa de traslacion.
DE102016201564A1 (de) 2016-02-02 2017-08-03 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines reflektiven optischen Elements und reflektives optisches Element
EP3366804B1 (en) * 2017-02-22 2022-05-11 Satisloh AG Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
EP3715499A1 (en) * 2019-03-29 2020-09-30 Picosun Oy Substrate coating
CN110172669A (zh) * 2019-06-28 2019-08-27 信利光电股份有限公司 一种氧化物膜层的制备方法
CN113621929B (zh) * 2020-05-08 2023-04-11 武汉光谷创元电子有限公司 微波器件的制造设备和制造方法
KR102430708B1 (ko) * 2021-07-19 2022-08-10 (주)코미코 대면적 코팅을 위한 박막 스트레스 제어 기반 코팅 방법 및 이를 이용한 코팅 구조물

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Also Published As

Publication number Publication date
EP2319951A4 (en) 2011-08-03
EP2319951A1 (en) 2011-05-11
US20110151135A1 (en) 2011-06-23
US8826856B2 (en) 2014-09-09
JP4540746B2 (ja) 2010-09-08
TWI332994B (xx) 2010-11-11
US20110262656A1 (en) 2011-10-27
JPWO2010018639A1 (ja) 2012-01-26
KR100984221B1 (ko) 2010-09-28
JPWO2010018876A1 (ja) 2012-01-26
KR20100084655A (ko) 2010-07-27
EP2319951B1 (en) 2013-03-13
WO2010018639A1 (ja) 2010-02-18
TW201006943A (en) 2010-02-16
CN101861408A (zh) 2010-10-13
WO2010018876A1 (ja) 2010-02-18
CN101861408B (zh) 2011-09-28

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20180817