HK1129950A1 - Surface mountable lightemitting element - Google Patents

Surface mountable lightemitting element

Info

Publication number
HK1129950A1
HK1129950A1 HK09109742.3A HK09109742A HK1129950A1 HK 1129950 A1 HK1129950 A1 HK 1129950A1 HK 09109742 A HK09109742 A HK 09109742A HK 1129950 A1 HK1129950 A1 HK 1129950A1
Authority
HK
Hong Kong
Prior art keywords
contact
electrode
circuit device
bonded
base surface
Prior art date
Application number
HK09109742.3A
Other languages
English (en)
Inventor
Frank T Shum
Original Assignee
Bridgelux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bridgelux Inc filed Critical Bridgelux Inc
Publication of HK1129950A1 publication Critical patent/HK1129950A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK09109742.3A 2006-08-11 2009-10-21 Surface mountable lightemitting element HK1129950A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/502,940 US7439548B2 (en) 2006-08-11 2006-08-11 Surface mountable chip
PCT/US2007/075625 WO2008021982A2 (fr) 2006-08-11 2007-08-09 Puce montable en surface

Publications (1)

Publication Number Publication Date
HK1129950A1 true HK1129950A1 (en) 2009-12-11

Family

ID=39049817

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09109742.3A HK1129950A1 (en) 2006-08-11 2009-10-21 Surface mountable lightemitting element

Country Status (9)

Country Link
US (3) US7439548B2 (fr)
EP (1) EP2052420A4 (fr)
JP (1) JP5431936B2 (fr)
KR (1) KR101214297B1 (fr)
CN (1) CN101517758B (fr)
HK (1) HK1129950A1 (fr)
MY (1) MY147999A (fr)
TW (1) TWI344711B (fr)
WO (1) WO2008021982A2 (fr)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080239685A1 (en) * 2007-03-27 2008-10-02 Tadahiko Kawabe Capacitor built-in wiring board
DE102008021402B4 (de) 2008-04-29 2023-08-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares Leuchtdioden-Modul und Verfahren zur Herstellung eines oberflächenmontierbaren Leuchtdioden-Moduls
DE102008028886B4 (de) * 2008-06-18 2024-02-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements
TWI480962B (zh) * 2009-04-09 2015-04-11 Lextar Electronics Corp 發光二極體封裝以及發光二極體晶圓級封裝製程
DE102009039890A1 (de) * 2009-09-03 2011-03-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einem Halbleiterkörper, einer Isolationsschicht und einer planaren Leitstruktur und Verfahren zu dessen Herstellung
JP2011119519A (ja) 2009-12-04 2011-06-16 Showa Denko Kk 半導体発光素子及び半導体発光装置
JP5882910B2 (ja) * 2010-01-19 2016-03-09 エルジー イノテック カンパニー リミテッド パッケージおよびその製造方法
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP5101645B2 (ja) * 2010-02-24 2012-12-19 株式会社東芝 半導体発光装置
WO2011125311A1 (fr) * 2010-04-01 2011-10-13 パナソニック株式会社 Élément de diode électroluminescente et dispositif de diode électroluminescente
TWI483419B (zh) * 2010-05-10 2015-05-01 Advanced Optoelectronic Tech 發光二極體及其製造方法
DE102010024862A1 (de) * 2010-06-24 2011-12-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US8901586B2 (en) * 2010-07-12 2014-12-02 Samsung Electronics Co., Ltd. Light emitting device and method of manufacturing the same
US20120061700A1 (en) 2010-09-09 2012-03-15 Andreas Eder Method and system for providing a reliable light emitting diode semiconductor device
US8610161B2 (en) 2010-10-28 2013-12-17 Tsmc Solid State Lighting Ltd. Light emitting diode optical emitter with transparent electrical connectors
DE102010054898A1 (de) * 2010-12-17 2012-06-21 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen Halbleiterchip und Halbleiterchip
US8653542B2 (en) * 2011-01-13 2014-02-18 Tsmc Solid State Lighting Ltd. Micro-interconnects for light-emitting diodes
DE102011012924A1 (de) 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Träger für eine optoelektronische Struktur und optoelektronischer Halbleiterchip mit solch einem Träger
CN103814447B (zh) * 2011-05-12 2016-04-20 Bbsa有限公司 垂直型第iii族氮化物半导体led芯片及其制造方法
US9269878B2 (en) 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
JP5887638B2 (ja) 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
KR101932951B1 (ko) * 2011-06-01 2018-12-27 루미리즈 홀딩 비.브이. 지지 기판에 발광 디바이스를 부착하는 방법
TWI495041B (zh) * 2011-07-05 2015-08-01 Sony Corp 半導體裝置、用於半導體裝置之製造方法及電子設備
US8896125B2 (en) 2011-07-05 2014-11-25 Sony Corporation Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
CN103650171B (zh) * 2011-07-15 2018-09-18 亮锐控股有限公司 将半导体装置结合到支持衬底的方法
WO2013021305A1 (fr) * 2011-08-10 2013-02-14 Koninklijke Philips Electronics N.V. Traitement d'un niveau tranche de del divisant une tranche de support
CN102569599A (zh) * 2011-11-08 2012-07-11 无锡瑞威光电科技有限公司 晶圆级led透镜封装结构及方法
US9863616B2 (en) 2012-01-30 2018-01-09 Bridgelux Inc. Circuit board for LED applications
TWI546979B (zh) * 2012-03-05 2016-08-21 晶元光電股份有限公司 對位接合之發光二極體裝置與其製造方法
DE102012105176B4 (de) * 2012-06-14 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102012215265B4 (de) * 2012-08-28 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer laserdiode, halterung und laserdiode
TWI493760B (zh) * 2013-02-04 2015-07-21 發光二極體及其晶片板上封裝結構
KR102065390B1 (ko) 2013-02-15 2020-01-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
CN103151447B (zh) * 2013-03-11 2016-03-02 厦门市三安光电科技有限公司 一种双面发光二极管结构及其制作方法
US10262951B2 (en) * 2013-05-16 2019-04-16 National Institute Of Aerospace Associates Radiation hardened microelectronic chip packaging technology
TWI609151B (zh) * 2014-02-25 2017-12-21 綠點高新科技股份有限公司 Lighting device and its manufacturing method
KR102227085B1 (ko) 2014-03-05 2021-03-12 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
DE102016205308A1 (de) * 2016-03-31 2017-10-05 Osram Opto Semiconductors Gmbh Verfahren zur herstellung einer vielzahl von halbleiterchips, halbleiterchip und modul mit einem halbleiterchip
TWI615999B (zh) * 2016-12-30 2018-02-21 光寶光電（常州）有限公司 發光二極體封裝結構
CN108269898B (zh) * 2016-12-30 2019-10-18 光宝光电(常州)有限公司 发光二极管封装结构
CN108336190B (zh) 2017-01-20 2020-05-05 展晶科技(深圳)有限公司 覆晶发光二极管及其制造方法
US10374386B1 (en) * 2018-06-07 2019-08-06 Finisar Corporation Chip on carrier
US11264527B2 (en) * 2018-10-01 2022-03-01 Medtronic, Inc. Integrated circuit package and system using same
TWI840048B (zh) * 2022-12-25 2024-04-21 台亞半導體股份有限公司 發光二極體電流導流裝置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254732A (ja) 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
JP2000077713A (ja) * 1998-08-27 2000-03-14 Sanyo Electric Co Ltd 半導体発光素子
JP2000244010A (ja) * 1999-02-19 2000-09-08 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子の製造方法
JP3891115B2 (ja) 2001-04-17 2007-03-14 日亜化学工業株式会社 発光装置
CN1189950C (zh) * 2001-07-23 2005-02-16 连勇科技股份有限公司 可表面粘着并具有覆晶封装结构的发光半导体装置
JP4239508B2 (ja) * 2002-08-01 2009-03-18 日亜化学工業株式会社 発光素子
US6599768B1 (en) * 2002-08-20 2003-07-29 United Epitaxy Co., Ltd. Surface mounting method for high power light emitting diode
CN101789482B (zh) * 2003-03-10 2013-04-17 丰田合成株式会社 固体元件装置及其制造方法
JP2004356230A (ja) * 2003-05-27 2004-12-16 Matsushita Electric Works Ltd 発光装置およびその製造方法
KR101228428B1 (ko) * 2004-02-20 2013-01-31 오스람 옵토 세미컨덕터스 게엠베하 광전 소자, 다수의 광전 소자를 구비한 장치 및 광전 소자를 제조하기 위한 방법
JP2005277372A (ja) * 2004-02-25 2005-10-06 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
JP2006100787A (ja) * 2004-08-31 2006-04-13 Toyoda Gosei Co Ltd 発光装置および発光素子
JP4457826B2 (ja) * 2004-09-22 2010-04-28 三菱化学株式会社 窒化物半導体を用いた発光ダイオード
CN100487931C (zh) * 2004-09-27 2009-05-13 松下电器产业株式会社 半导体发光元件及其制造方法和安装方法、发光器件
CN100561758C (zh) * 2004-10-22 2009-11-18 首尔Opto仪器股份有限公司 氮化镓化合物半导体发光元件及其制造方法
JP2006173196A (ja) * 2004-12-13 2006-06-29 Citizen Electronics Co Ltd 発光素子及びこれを用いた発光ダイオード
JP4995722B2 (ja) * 2004-12-22 2012-08-08 パナソニック株式会社 半導体発光装置、照明モジュール、および照明装置

Also Published As

Publication number Publication date
EP2052420A4 (fr) 2014-08-20
US7439548B2 (en) 2008-10-21
US7632691B2 (en) 2009-12-15
KR101214297B1 (ko) 2012-12-20
KR20090057382A (ko) 2009-06-05
US7863626B2 (en) 2011-01-04
TWI344711B (en) 2011-07-01
CN101517758A (zh) 2009-08-26
US20080315241A1 (en) 2008-12-25
CN101517758B (zh) 2012-03-14
WO2008021982A3 (fr) 2008-07-03
EP2052420A2 (fr) 2009-04-29
JP2010500780A (ja) 2010-01-07
US20100052003A1 (en) 2010-03-04
JP5431936B2 (ja) 2014-03-05
TW200812124A (en) 2008-03-01
US20080035935A1 (en) 2008-02-14
WO2008021982A2 (fr) 2008-02-21
MY147999A (en) 2013-02-28

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20230809