HK1059499A1 - Process for increasing the field emission , emitter, triode, display device and light device - Google Patents

Process for increasing the field emission , emitter, triode, display device and light device

Info

Publication number
HK1059499A1
HK1059499A1 HK04102278A HK04102278A HK1059499A1 HK 1059499 A1 HK1059499 A1 HK 1059499A1 HK 04102278 A HK04102278 A HK 04102278A HK 04102278 A HK04102278 A HK 04102278A HK 1059499 A1 HK1059499 A1 HK 1059499A1
Authority
HK
Hong Kong
Prior art keywords
triode
emitter
increasing
field emission
display device
Prior art date
Application number
HK04102278A
Other languages
English (en)
Inventor
Robert Joseph Bouchard
Lap-Tak Andrew Cheng
John Gerard Lavin
David Herbert Roach
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27395802&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1059499(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Du Pont filed Critical Du Pont
Publication of HK1059499A1 publication Critical patent/HK1059499A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3048—Distributed particle emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Conductive Materials (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
HK04102278A 2000-06-21 2004-03-29 Process for increasing the field emission , emitter, triode, display device and light device HK1059499A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US21300200P 2000-06-21 2000-06-21
US21315900P 2000-06-22 2000-06-22
US28793001P 2001-05-01 2001-05-01
PCT/US2001/019580 WO2001099146A2 (fr) 2000-06-21 2001-06-19 Procede permettant d'ameliorer les emissions d'emetteurs de champs electroniques

Publications (1)

Publication Number Publication Date
HK1059499A1 true HK1059499A1 (en) 2004-07-02

Family

ID=27395802

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04102278A HK1059499A1 (en) 2000-06-21 2004-03-29 Process for increasing the field emission , emitter, triode, display device and light device

Country Status (9)

Country Link
US (5) US7449081B2 (fr)
EP (1) EP1356489A2 (fr)
JP (6) JP4262976B2 (fr)
KR (1) KR100714325B1 (fr)
CN (2) CN100341094C (fr)
AU (1) AU2001271339A1 (fr)
BR (1) BR0112191A (fr)
HK (1) HK1059499A1 (fr)
WO (1) WO2001099146A2 (fr)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7449081B2 (en) 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
GB0015928D0 (en) * 2000-06-30 2000-08-23 Printable Field Emitters Limit Field emitters
US7276844B2 (en) * 2001-06-15 2007-10-02 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
US6897603B2 (en) * 2001-08-24 2005-05-24 Si Diamond Technology, Inc. Catalyst for carbon nanotube growth
JP3710436B2 (ja) * 2001-09-10 2005-10-26 キヤノン株式会社 電子放出素子、電子源及び画像表示装置の製造方法
US7842522B2 (en) * 2001-10-19 2010-11-30 Applied Nanotech Holdings, Inc. Well formation
US7462498B2 (en) * 2001-10-19 2008-12-09 Applied Nanotech Holdings, Inc. Activation of carbon nanotubes for field emission applications
US7854861B2 (en) * 2001-10-19 2010-12-21 Applied Nanotech Holdings, Inc. Well formation
EP1315191B1 (fr) * 2001-11-23 2007-08-22 Samsung SDI Co. Ltd. Composite pour pate contenant de nanotubes de carbone, dispositif émetteur d'électrons utilisant ce composite et procédé de fabrication
JP2003168355A (ja) * 2001-11-30 2003-06-13 Sony Corp 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法
KR100413815B1 (ko) * 2002-01-22 2004-01-03 삼성에스디아이 주식회사 삼극구조를 가지는 탄소나노튜브 전계방출소자 및 그제조방법
JP3857156B2 (ja) * 2002-02-22 2006-12-13 株式会社日立製作所 電子源用ペースト、電子源およびこの電子源を用いた自発光パネル型表示装置
US8552632B2 (en) * 2002-03-20 2013-10-08 Copytele, Inc. Active matrix phosphor cold cathode display
US7317277B2 (en) 2002-04-24 2008-01-08 E.I. Du Pont De Nemours And Company Electron field emitter and compositions related thereto
US6798127B2 (en) * 2002-10-09 2004-09-28 Nano-Proprietary, Inc. Enhanced field emission from carbon nanotubes mixed with particles
WO2004047166A2 (fr) * 2002-11-15 2004-06-03 E.I. Du Pont De Nemours And Company Couches protectrices compatibles avec des pates en couche epaisse
US20040170925A1 (en) * 2002-12-06 2004-09-02 Roach David Herbert Positive imageable thick film compositions
EP1586112B1 (fr) 2003-01-22 2006-12-27 E.I. du Pont de Nemours and Company Creation de motifs par transfert par diffusion de liant dans une couche de pate pour couche epaisse
US7303854B2 (en) 2003-02-14 2007-12-04 E.I. Du Pont De Nemours And Company Electrode-forming composition for field emission type of display device, and method using such a composition
US20100098877A1 (en) * 2003-03-07 2010-04-22 Cooper Christopher H Large scale manufacturing of nanostructured material
TWI223308B (en) * 2003-05-08 2004-11-01 Ind Tech Res Inst Manufacturing process of carbon nanotube field emission transistor
WO2004102604A1 (fr) * 2003-05-16 2004-11-25 Koninklijke Philips Electronics N.V. Ecran d'affichage a emission de champ et son procede de fabrication
KR100551229B1 (ko) * 2003-06-26 2006-02-10 주식회사 디피아이 솔루션스 디스플레이용 유기 투명 전극의 제조방법
CN100585772C (zh) * 2003-07-08 2010-01-27 纳幕尔杜邦公司 采用接触印刷用厚膜膏填塞孔或槽的方法
KR20050014430A (ko) * 2003-07-31 2005-02-07 삼성에스디아이 주식회사 평판 표시소자의 전자 방출원 형성용 조성물 및 이로부터제조되는 전자 방출원
US20050064167A1 (en) * 2003-09-12 2005-03-24 Nano-Proprietary, Inc. Carbon nanotubes
JP2007505474A (ja) * 2003-09-12 2007-03-08 ナノ−プロプライエタリー， インコーポレイテッド ウェル形成
US7452735B2 (en) * 2003-09-12 2008-11-18 Applied Nanotech Holdings, Inc. Carbon nanotube deposition with a stencil
KR100960496B1 (ko) * 2003-10-31 2010-06-01 엘지디스플레이 주식회사 액정표시소자의 러빙방법
KR20050060287A (ko) * 2003-12-16 2005-06-22 삼성에스디아이 주식회사 카본나노튜브 에미터의 형성방법
US7402373B2 (en) 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
KR20050087376A (ko) * 2004-02-26 2005-08-31 삼성에스디아이 주식회사 평판표시소자의 전자방출원 형성용 조성물 및 이를 이용한전자방출원
KR100586659B1 (ko) * 2004-04-01 2006-06-07 주식회사 디피아이 솔루션스 유기 전극 코팅용 조성물 및 이를 이용한 고투명성 유기전극의 제조방법
KR20050114032A (ko) * 2004-05-31 2005-12-05 삼성에스디아이 주식회사 고분자 재료를 이용한 플렉서블 이미터 및 그 제조 방법
US20060292297A1 (en) * 2004-07-06 2006-12-28 Nano-Proprietary, Inc. Patterning CNT emitters
JP2006059752A (ja) * 2004-08-23 2006-03-02 Hitachi Displays Ltd 自発光平面表示装置
US20060073893A1 (en) * 2004-10-01 2006-04-06 Dahl John M Touchscreen audio feedback in a wagering game system
KR100856671B1 (ko) * 2004-11-10 2008-09-04 히다치 훈마츠 야킨 가부시키가이샤 전자 방출원 형성용 조성물 및 전자 방출원용 피막의형성방법
JP2006167710A (ja) * 2004-11-22 2006-06-29 Nissin Kogyo Co Ltd 薄膜の製造方法及び薄膜が形成された基材、電子放出材料及びその製造方法並びに電子放出装置
KR100670330B1 (ko) * 2005-04-12 2007-01-16 삼성에스디아이 주식회사 전자 방출원 및 상기 전자 방출원을 포함하는 전자 방출소자
JP2006310124A (ja) * 2005-04-28 2006-11-09 Sony Corp 微小電子源装置の製造方法
KR100738055B1 (ko) * 2005-05-18 2007-07-12 삼성에스디아이 주식회사 전자소자의 적층 형성 방법 및 이를 이용한 ｆｅｄ의제조방법
JP2007080563A (ja) * 2005-09-12 2007-03-29 Mitsubishi Electric Corp 冷陰極表示装置の製造装置および製造方法
JP2007115675A (ja) * 2005-09-21 2007-05-10 Toray Ind Inc 電子放出源用ペースト
KR20070046598A (ko) * 2005-10-31 2007-05-03 삼성에스디아이 주식회사 카본계 물질 및 광전소자를 포함한 전자 방출원, 상기 전자방출원의 제조 방법, 상기 전자 방출원을 구비한 전자방출 소자 및 상기 전자 방출원을 구비한 전자 방출디스플레이 장치
KR20070047521A (ko) * 2005-11-02 2007-05-07 삼성에스디아이 주식회사 전계방출형 백라이트 유닛 및 구동방법
KR100911370B1 (ko) * 2005-12-06 2009-08-10 한국전자통신연구원 고 신뢰성 ｃｎｔ 페이스트의 제조 방법 및 ｃｎｔ 에미터제조 방법
CN1992099B (zh) * 2005-12-30 2010-11-10 鸿富锦精密工业（深圳）有限公司 导电复合材料及含有该导电复合材料的电缆
US20070154625A1 (en) * 2006-01-05 2007-07-05 Teco Electric & Machinery Co., Ltd. Method for activating electron emission surface of field emission display
CN100573808C (zh) * 2006-03-22 2009-12-23 清华大学 场发射照明光源及其制造方法
CN100573809C (zh) * 2006-03-24 2009-12-23 清华大学 场发射平面显示光源及其制造方法
CN100561657C (zh) * 2006-03-31 2009-11-18 清华大学 场发射灯管及其制造方法
CN100573777C (zh) * 2006-03-31 2009-12-23 清华大学 场发射电子源及其制造方法
CN101086939B (zh) * 2006-06-09 2010-05-12 清华大学 场发射元件及其制备方法
TW200802506A (en) * 2006-06-13 2008-01-01 Nat Univ Tsing Hua Method of making field emission cathode component with vertical carbon nano tube array and product thereof
CN101093765B (zh) * 2006-06-23 2011-06-08 清华大学 场发射元件及其制备方法
CN101093764B (zh) * 2006-06-23 2012-03-28 清华大学 场发射元件及其制备方法
KR20090034988A (ko) * 2006-07-18 2009-04-08 더 유니버시티 오브 써던 캘리포니아 나노튜브를 갖는 유기 광전자 소자 전극
CN101188179B (zh) * 2006-11-15 2010-05-26 清华大学 场发射电子源的制造方法
CN101192493B (zh) * 2006-11-22 2011-02-02 鸿富锦精密工业（深圳）有限公司 阳极装置及其制造方法
CN101192492B (zh) * 2006-11-22 2010-09-29 清华大学 透明导电膜的制备方法
KR100777113B1 (ko) * 2006-12-07 2007-11-19 한국전자통신연구원 미세패터닝이 가능한 고 신뢰성의 ｃｎｔ 에미터 제조 방법
US7868333B2 (en) * 2006-12-21 2011-01-11 E.I. Du Pont De Nemours And Company Process for demetallization of carbon nanotubes
WO2008118536A2 (fr) * 2007-02-02 2008-10-02 The Regents Of The University Of California Procédé pour produire des nanoparticules actives en verre par ablation laser
US20090314647A1 (en) * 2007-02-24 2009-12-24 E.I. Du Pont De Nemours And Company Method for the electrochemical deposition of carbon nanotubes
JP5272349B2 (ja) 2007-02-26 2013-08-28 東レ株式会社 電子放出源用ペースト及び電子放出素子
EP2179434A1 (fr) * 2007-08-23 2010-04-28 E. I. du Pont de Nemours and Company Dispositif à émission de champ avec vapeur protectrice
US20090061161A1 (en) * 2007-08-27 2009-03-05 Lynn Sheehan Laser patterning of a cross-linked polymer
US8540922B2 (en) * 2007-08-27 2013-09-24 Hewlett-Packard Development Company, L.P. Laser patterning of a carbon nanotube layer
US7556788B2 (en) * 2007-10-05 2009-07-07 E.I. Du Pont De Nemours And Company Process for preparing boron carbon nanorods
TW200939280A (en) * 2007-10-05 2009-09-16 Du Pont Under-gate field emission triode with charge dissipation layer
KR20100097146A (ko) * 2007-11-15 2010-09-02 이 아이 듀폰 디 네모아 앤드 캄파니 탄소 나노튜브의 보호
KR100889527B1 (ko) * 2007-11-21 2009-03-19 삼성에스디아이 주식회사 발광 장치 및 이 발광 장치를 광원으로 사용하는 표시 장치
CN101874281B (zh) 2007-11-26 2012-05-23 纳幕尔杜邦公司 包含抗紫外光介电层的阴极组件
JP2011508386A (ja) 2007-12-21 2011-03-10 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 表面フィーチャーにおける厚膜ペーストのパターニング
EP2283507A2 (fr) 2008-05-19 2011-02-16 E. I. du Pont de Nemours and Company Compositions d'argent et de nanotubes de carbone photo-imageables, co-traitables, et procédé pour former des dispositifs d'émission de champ
CN101604727B (zh) * 2008-06-13 2011-01-26 鸿富锦精密工业（深圳）有限公司 电致伸缩复合材料及其制备方法
US20100000441A1 (en) 2008-07-01 2010-01-07 Jang Bor Z Nano graphene platelet-based conductive inks
US8252165B2 (en) * 2008-08-22 2012-08-28 E I Du Pont De Nemours And Company Method for the electrochemical deposition of carbon nanotubes
KR20100036920A (ko) 2008-09-30 2010-04-08 삼성전자주식회사 전자방출원 형성용 조성물, 이로부터 형성된 전자방출원, 그 제조방법 및 이를 채용한 전계 방출 소자
KR101065280B1 (ko) 2008-11-24 2011-09-19 한국표준과학연구원 탄소나노튜브를 이용한 유연소자 및 그 제조방법
KR101078079B1 (ko) * 2008-12-10 2011-10-28 엘에스전선 주식회사 은 수식 탄소 나노튜브 함유 전도성 페이스트 조성물
JP2010180263A (ja) * 2009-02-03 2010-08-19 Nec Corp カーボンナノチューブインク組成物及びカーボンナノチューブ膜の製造方法
US8414757B2 (en) * 2009-02-27 2013-04-09 E I Du Pont De Nemours And Company Process for improving the oxidation resistance of carbon nanotubes
EP2414286A4 (fr) * 2009-04-03 2014-10-29 Vorbeck Materials Corp Compositions de polymères contenant des feuillets de graphène, ainsi que du graphite
US20100285715A1 (en) * 2009-05-08 2010-11-11 Yuan-Yao Li Method of manufacturing carbon nanotube (cnt) field emission source
EP2478545A4 (fr) * 2009-09-18 2013-03-13 Univ Akron Dispositifs et procédés d'émission de champ à nanotubes de carbone
US8853540B2 (en) 2011-04-19 2014-10-07 Commscope, Inc. Of North Carolina Carbon nanotube enhanced conductors for communications cables and related communications cables and methods
JP5854503B2 (ja) * 2011-11-24 2016-02-09 国立大学法人東北大学 ナノ複合材料およびナノ複合材料の製造方法
WO2014176474A1 (fr) * 2013-04-25 2014-10-30 GM Global Technology Operations LLC Affichage ambiant
DE102016013279A1 (de) * 2016-11-08 2018-05-09 H&P Advanced Technology GmbH Verfahren zur Herstellung eines Elektronenemitters mit einer Kohlenstoffnanoröhren enthaltenden Beschichtung
EP3933881A1 (fr) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG Source de rayons x à plusieurs réseaux

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2204081A (en) * 1938-10-22 1940-06-11 Metropolis Bending Company Folding table
US4857799A (en) * 1986-07-30 1989-08-15 Sri International Matrix-addressed flat panel display
US5015912A (en) * 1986-07-30 1991-05-14 Sri International Matrix-addressed flat panel display
JPS6426682A (en) * 1987-07-22 1989-01-27 Murata Manufacturing Co Resistance coating
US5413866A (en) * 1990-10-23 1995-05-09 Baker; R. Terry K. High performance carbon filament structures
US5618875A (en) * 1990-10-23 1997-04-08 Catalytic Materials Limited High performance carbon filament structures
US5149584A (en) * 1990-10-23 1992-09-22 Baker R Terry K Carbon fiber structures having improved interlaminar properties
US5458784A (en) * 1990-10-23 1995-10-17 Catalytic Materials Limited Removal of contaminants from aqueous and gaseous streams using graphic filaments
JPH04198271A (ja) 1990-11-27 1992-07-17 Mitsui Mining Co Ltd 導電性ペースト組成物
US5449970A (en) 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
JPH0653106B2 (ja) 1992-06-22 1994-07-20 株式会社エイ・ティ・アール通信システム研究所 視線情報解析装置
JPH0748346B2 (ja) 1992-11-19 1995-05-24 日本電気株式会社 電界放出冷陰極素子
EP0971386B1 (fr) 1992-12-23 2004-06-16 Nano-Proprietary, Inc. Affichage à écran plat à structure triode utilisant des cathodes plates à émission de champ
EP0730780A1 (fr) 1993-06-02 1996-09-11 Microelectronics and Computer Technology Corporation Cathode plate a emission de champ pourvue d'une pellicule de diamant amorphe
US5378408A (en) * 1993-07-29 1995-01-03 E. I. Du Pont De Nemours And Company Lead-free thick film paste composition
JP3309231B2 (ja) * 1993-08-25 2002-07-29 タツタ電線株式会社 金属酸化物成形体との密着性の良い導電塗料
US6074893A (en) * 1993-09-27 2000-06-13 Sumitomo Metal Industries, Ltd. Process for forming fine thick-film conductor patterns
US5486126A (en) * 1994-11-18 1996-01-23 Micron Display Technology, Inc. Spacers for large area displays
US5709577A (en) * 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
JPH08264109A (ja) 1995-03-20 1996-10-11 Sony Corp 粒子放出装置、電界放出型装置及びこれらの製造方法
JP3302278B2 (ja) * 1995-12-12 2002-07-15 キヤノン株式会社 電子放出素子の製造方法並びに該製造方法を用いた電子源及び画像形成装置の製造方法
US6156433A (en) * 1996-01-26 2000-12-05 Dai Nippon Printing Co., Ltd. Electrode for plasma display panel and process for producing the same
JPH09326231A (ja) * 1996-04-05 1997-12-16 Canon Inc 電子放出素子及び電子源及び画像形成装置の製造方法
WO1998005920A1 (fr) * 1996-08-08 1998-02-12 William Marsh Rice University Dispositifs a nano-echelle, maniables de façon macroscopique et realises a partir d'ensembles nanotubes
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
JP3421549B2 (ja) 1996-09-18 2003-06-30 株式会社東芝 真空マイクロ装置
KR100365444B1 (ko) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 진공마이크로장치와이를이용한화상표시장치
US6379745B1 (en) * 1997-02-20 2002-04-30 Parelec, Inc. Low temperature method and compositions for producing electrical conductors
JP3790047B2 (ja) 1998-07-17 2006-06-28 株式会社ノリタケカンパニーリミテド 電子放出源の製造方法
EP0905737B1 (fr) * 1997-09-30 2004-04-28 Noritake Co., Ltd. Source émettrice d'électrons
KR100550485B1 (ko) * 1997-12-15 2006-02-09 이 아이 듀폰 디 네모아 앤드 캄파니 이온-충격된 흑연 전자 방출체
JP2002509340A (ja) 1997-12-15 2002-03-26 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー イオン衝撃された黒鉛電子エミッタ
US6409567B1 (en) * 1997-12-15 2002-06-25 E.I. Du Pont De Nemours And Company Past-deposited carbon electron emitters
US7517606B2 (en) * 1998-02-24 2009-04-14 Cabot Corporation Fuel cells and batteries including metal-carbon composite powders
JP3730391B2 (ja) * 1998-03-09 2006-01-05 株式会社ノリタケカンパニーリミテド 蛍光表示装置の製造方法
US6174449B1 (en) * 1998-05-14 2001-01-16 Micron Technology, Inc. Magnetically patterned etch mask
JP3497740B2 (ja) 1998-09-09 2004-02-16 株式会社東芝 カーボンナノチューブの製造方法及び電界放出型冷陰極装置の製造方法
JP3569135B2 (ja) 1998-09-09 2004-09-22 株式会社東芝 電界放出陰極の製造方法
US6630772B1 (en) * 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
JP4409003B2 (ja) * 1998-09-24 2010-02-03 三星エスディアイ株式会社 フィールドエミッションディスプレイ用エレクトロンエミッタ組成物及びこれを利用したエレクトロンエミッタの製造方法
JP4069532B2 (ja) 1999-01-11 2008-04-02 松下電器産業株式会社 カーボンインキ、電子放出素子、電子放出素子の製造方法、および画像表示装置
US6250984B1 (en) * 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
US6564722B1 (en) * 1999-04-21 2003-05-20 Nippon Shooter Ltd. Transfer system
JP4043141B2 (ja) 1999-04-27 2008-02-06 双葉電子工業株式会社 電子放出源の製造方法及び電子放出源
JP3553414B2 (ja) 1999-04-28 2004-08-11 シャープ株式会社 電子源アレイと、その製造方法、及び前記電子源アレイまたはその製造方法を用いて形成される画像形成装置
JP2000348647A (ja) * 1999-06-02 2000-12-15 Sharp Corp 画像形成装置
US6504292B1 (en) * 1999-07-15 2003-01-07 Agere Systems Inc. Field emitting device comprising metallized nanostructures and method for making the same
JP3468723B2 (ja) 1999-07-16 2003-11-17 双葉電子工業株式会社 電子放出源の製造方法、電子放出源及び蛍光発光型表示器
US6312303B1 (en) * 1999-07-19 2001-11-06 Si Diamond Technology, Inc. Alignment of carbon nanotubes
JP3611503B2 (ja) * 1999-07-21 2005-01-19 シャープ株式会社 電子源及びその製造方法
JP4063451B2 (ja) 1999-07-26 2008-03-19 双葉電子工業株式会社 カーボンナノチューブのパターン形成方法
US6277318B1 (en) * 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
US6359383B1 (en) * 1999-08-19 2002-03-19 Industrial Technology Research Institute Field emission display device equipped with nanotube emitters and method for fabricating
US6664722B1 (en) * 1999-12-02 2003-12-16 Si Diamond Technology, Inc. Field emission material
US6652883B2 (en) * 2000-03-13 2003-11-25 Biocure, Inc. Tissue bulking and coating compositions
AU2001245786A1 (en) * 2000-03-17 2001-10-03 Hyperion Catalysis International Inc. Carbon nanotubes in fuels and lubricants
JP3730476B2 (ja) * 2000-03-31 2006-01-05 株式会社東芝 電界放出型冷陰極及びその製造方法
KR20030047888A (ko) 2000-05-26 2003-06-18 이 아이 듀폰 디 네모아 앤드 캄파니 촉매적 성장 탄소 섬유 전장 이미터 및 그로부터 제조된전장 이미터 캐쏘드
US7449081B2 (en) * 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
WO2002041348A1 (fr) 2000-11-20 2002-05-23 Nec Corporation Film cnt et cathode froide a emission de champ comportant ce film
US20040018371A1 (en) * 2002-04-12 2004-01-29 Si Diamond Technology, Inc. Metallization of carbon nanotubes for field emission applications
US6436221B1 (en) * 2001-02-07 2002-08-20 Industrial Technology Research Institute Method of improving field emission efficiency for fabricating carbon nanotube field emitters
US6739932B2 (en) * 2001-06-07 2004-05-25 Si Diamond Technology, Inc. Field emission display using carbon nanotubes and methods of making the same
AU2002367711A1 (en) 2001-06-14 2003-10-20 Hyperion Catalysis International, Inc. Field emission devices using modified carbon nanotubes
US7276844B2 (en) * 2001-06-15 2007-10-02 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
KR100416141B1 (ko) * 2001-06-22 2004-01-31 삼성에스디아이 주식회사 카본계 물질로 형성된 에미터를 갖는 전계 방출표시소자의 제조방법
JP4894987B2 (ja) * 2001-06-29 2012-03-14 三洋電機株式会社 表示用パネルの製造方法
US7195938B2 (en) * 2001-10-19 2007-03-27 Nano-Proprietary, Inc. Activation effect on carbon nanotubes
US7462498B2 (en) * 2001-10-19 2008-12-09 Applied Nanotech Holdings, Inc. Activation of carbon nanotubes for field emission applications
US20060252163A1 (en) * 2001-10-19 2006-11-09 Nano-Proprietary, Inc. Peelable photoresist for carbon nanotube cathode
JP2003168355A (ja) * 2001-11-30 2003-06-13 Sony Corp 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法
US6975063B2 (en) * 2002-04-12 2005-12-13 Si Diamond Technology, Inc. Metallization of carbon nanotubes for field emission applications
US6798127B2 (en) * 2002-10-09 2004-09-28 Nano-Proprietary, Inc. Enhanced field emission from carbon nanotubes mixed with particles
JP2004178972A (ja) 2002-11-27 2004-06-24 Sony Corp 電子放出素子の製造方法及び表示装置の製造方法
TWI223308B (en) * 2003-05-08 2004-11-01 Ind Tech Res Inst Manufacturing process of carbon nanotube field emission transistor
WO2004102604A1 (fr) 2003-05-16 2004-11-25 Koninklijke Philips Electronics N.V. Ecran d'affichage a emission de champ et son procede de fabrication
KR20050060287A (ko) * 2003-12-16 2005-06-22 삼성에스디아이 주식회사 카본나노튜브 에미터의 형성방법
US7125308B2 (en) * 2003-12-18 2006-10-24 Nano-Proprietary, Inc. Bead blast activation of carbon nanotube cathode
US7137660B2 (en) * 2004-07-20 2006-11-21 Rain Riders, Llc Convertible top for an all-terrain vehicle
KR100590579B1 (ko) 2005-02-01 2006-06-19 삼성에스디아이 주식회사 탄소나노튜브 에미터를 구비한 전계방출소자의 제조방법
US7413613B2 (en) * 2005-03-28 2008-08-19 Teco Nanotech Co., Ltd Method for activating electron source surface of field emission display

Also Published As

Publication number Publication date
US8011990B2 (en) 2011-09-06
CN100341094C (zh) 2007-10-03
AU2001271339A1 (en) 2002-01-02
KR20030036236A (ko) 2003-05-09
US20060049741A1 (en) 2006-03-09
JP2011100737A (ja) 2011-05-19
US8529798B2 (en) 2013-09-10
KR100714325B1 (ko) 2007-05-04
JP2011187452A (ja) 2011-09-22
JP2011175979A (ja) 2011-09-08
CN101093766A (zh) 2007-12-26
JP5209911B2 (ja) 2013-06-12
EP1356489A2 (fr) 2003-10-29
US20090104834A1 (en) 2009-04-23
JP2008027919A (ja) 2008-02-07
CN101093766B (zh) 2012-02-22
US7449081B2 (en) 2008-11-11
US20070160758A1 (en) 2007-07-12
JP2004504690A (ja) 2004-02-12
CN1447978A (zh) 2003-10-08
WO2001099146A3 (fr) 2003-08-21
US7449082B2 (en) 2008-11-11
JP2011071124A (ja) 2011-04-07
US8070906B2 (en) 2011-12-06
JP4262976B2 (ja) 2009-05-13
US20080299864A1 (en) 2008-12-04
WO2001099146A2 (fr) 2001-12-27
US20020074932A1 (en) 2002-06-20
BR0112191A (pt) 2003-05-20

Similar Documents

Publication Publication Date Title
HK1059499A1 (en) Process for increasing the field emission , emitter, triode, display device and light device
DE60134699D1 (de) Elektronen emittierende Vorrichtung, Elektronenquelle und Bilderzeugungsgerät
DE69818633D1 (de) Elektronen emittierende vorrichtung, feldemissionsanzeigevorrichtung und herstellungsverfahren derselben
IL161018A0 (en) Multiple emitter boresight reference source
HK1045909A1 (en) Light emitting device.
HK1054467A1 (en) Light emitting device.
DE60013237D1 (de) Feldemissionsvorrichtung mit Triodenstruktur
EP1329664A4 (fr) Dispositif d'eclairage
DE60229468D1 (de) Elektronenemittierende Vorrichtung, Elektronenquelle und Bilderzeugungsgerät
EP1324366A3 (fr) Dispositif émetteur d'électrons, source d'électrons et dispositif d'affichage d'images et procédé de fabrication
MXPA01012677A (es) Ensamblaje emisor.
DE69911521D1 (de) Elektronenemissionsvorrichtung und eine Anzeigevorrichtung, welche diese Vorrichtung verwendet.
GB0015928D0 (en) Field emitters
HK1049707A1 (en) Light source apparatus and projection television.
MXPA03000713A (es) Procedimiento y dispositivo para desodorizar un medio ambiente.
HK1059336A1 (en) Tunneling emitter.
DE69703962T2 (de) Elektronenemittierende Vorrichtung
DE69723153T2 (de) Elektronen-emittierende Vorrichtung.
DE69911895D1 (de) Elektronen emittierende Vorrichtung, Elektronenquelle und Bilderzeugungsgerät
EP1300825A4 (fr) Dispositif d'affichage et procede de commande de ce dispositif et dispositif d'affichage a projection
DE69821173D1 (de) Elektronenemittierende Vorrichtung, Elektronenquelle und Bilderzeugungsgerät
HK1043433A1 (zh) 自對準電子源裝置
AU2001261314A1 (en) Field emission device having metal hydride source
GB2359660B (en) Triode field emission display using carbon nanobtubes
DE602004008812D1 (de) Elektronen-emittierende Vorrichtung, Elektronenquelle und Bildanzeigegerät

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20120619