BR0112191A - Processo para aumentar a emissão de um emissor de campos de elétrons, emissor de campos de elétrons, triodo de emissão de campos, dispositivo de iluminação, pasta imprimìvel em tela, processo para reduzir postos quentes de emissão em um emissor de campos de elétrons e processo para produzir um conjunto de cátodos - Google Patents

Processo para aumentar a emissão de um emissor de campos de elétrons, emissor de campos de elétrons, triodo de emissão de campos, dispositivo de iluminação, pasta imprimìvel em tela, processo para reduzir postos quentes de emissão em um emissor de campos de elétrons e processo para produzir um conjunto de cátodos

Info

Publication number
BR0112191A
BR0112191A BR0112191-0A BR0112191A BR0112191A BR 0112191 A BR0112191 A BR 0112191A BR 0112191 A BR0112191 A BR 0112191A BR 0112191 A BR0112191 A BR 0112191A
Authority
BR
Brazil
Prior art keywords
emission
field emitter
electron field
electron
emitter
Prior art date
Application number
BR0112191-0A
Other languages
English (en)
Inventor
Robert Joseph Bouchard
Andrew Lap-Tak Cheng
John Gerard Lavin
David Herbert Roach
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27395802&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BR0112191(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Du Pont filed Critical Du Pont
Publication of BR0112191A publication Critical patent/BR0112191A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3048—Distributed particle emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Conductive Materials (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

"PROCESSO PARA AUMENTAR A EMISSãO DE UM EMISSOR DE CAMPOS DE ELéTRONS, EMISSOR DE CAMPOS DE ELéTRONS, TRIODO DE EMISSãO DE CAMPOS, DISPOSITIVO DE ILUMINAçãO, PASTA IMPRIMìVEL EM TELA, PROCESSO PARA REDUZIR PONTOS QUENTES DE EMISSãO EM UM EMISSOR DE CAMPOS DE ELéTRONS E PROCESSO PARA PRODUZIR UM CONJUNTO DE CáTODOS". A presente invenção se refere a um processo para melhorar a emissão de campo de um emissor de campos de elétrons que compreende uma substância emissora acicular, tal como, carbono acicular, um semicondutor acicular, um metal acicular ou uma mistura destes, o qual compreende a aplicação de uma força à superfície do emissor de campos de elétrons em que a força resulta na remoção de uma parte do emissor de campos de elétrons, formando, desse modo, uma nova superfície do emissor de campos de elétrons.
BR0112191-0A 2000-06-21 2001-06-19 Processo para aumentar a emissão de um emissor de campos de elétrons, emissor de campos de elétrons, triodo de emissão de campos, dispositivo de iluminação, pasta imprimìvel em tela, processo para reduzir postos quentes de emissão em um emissor de campos de elétrons e processo para produzir um conjunto de cátodos BR0112191A (pt)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US21300200P 2000-06-21 2000-06-21
US21315900P 2000-06-22 2000-06-22
US28793001P 2001-05-01 2001-05-01
PCT/US2001/019580 WO2001099146A2 (en) 2000-06-21 2001-06-19 Process for manufacturing electron field emitters

Publications (1)

Publication Number Publication Date
BR0112191A true BR0112191A (pt) 2003-05-20

Family

ID=27395802

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0112191-0A BR0112191A (pt) 2000-06-21 2001-06-19 Processo para aumentar a emissão de um emissor de campos de elétrons, emissor de campos de elétrons, triodo de emissão de campos, dispositivo de iluminação, pasta imprimìvel em tela, processo para reduzir postos quentes de emissão em um emissor de campos de elétrons e processo para produzir um conjunto de cátodos

Country Status (9)

Country Link
US (5) US7449081B2 (pt)
EP (1) EP1356489A2 (pt)
JP (6) JP4262976B2 (pt)
KR (1) KR100714325B1 (pt)
CN (2) CN101093766B (pt)
AU (1) AU2001271339A1 (pt)
BR (1) BR0112191A (pt)
HK (1) HK1059499A1 (pt)
WO (1) WO2001099146A2 (pt)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7449081B2 (en) * 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
GB0015928D0 (en) * 2000-06-30 2000-08-23 Printable Field Emitters Limit Field emitters
US7276844B2 (en) * 2001-06-15 2007-10-02 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
US6897603B2 (en) * 2001-08-24 2005-05-24 Si Diamond Technology, Inc. Catalyst for carbon nanotube growth
JP3710436B2 (ja) * 2001-09-10 2005-10-26 キヤノン株式会社 電子放出素子、電子源及び画像表示装置の製造方法
US7462498B2 (en) * 2001-10-19 2008-12-09 Applied Nanotech Holdings, Inc. Activation of carbon nanotubes for field emission applications
US7842522B2 (en) * 2001-10-19 2010-11-30 Applied Nanotech Holdings, Inc. Well formation
US7854861B2 (en) * 2001-10-19 2010-12-21 Applied Nanotech Holdings, Inc. Well formation
DE60221951T2 (de) * 2001-11-23 2008-05-15 Samsung SDI Co., Ltd., Suwon Zusammensetzung für Paste mit Kohlenstoffnanoröhren, diese Zusammensetzung verwendende Elektronen-emittierende Vorrichtung und deren Herstellungsverfahren
JP2003168355A (ja) * 2001-11-30 2003-06-13 Sony Corp 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法
KR100413815B1 (ko) * 2002-01-22 2004-01-03 삼성에스디아이 주식회사 삼극구조를 가지는 탄소나노튜브 전계방출소자 및 그제조방법
JP3857156B2 (ja) * 2002-02-22 2006-12-13 株式会社日立製作所 電子源用ペースト、電子源およびこの電子源を用いた自発光パネル型表示装置
US8552632B2 (en) * 2002-03-20 2013-10-08 Copytele, Inc. Active matrix phosphor cold cathode display
US7317277B2 (en) * 2002-04-24 2008-01-08 E.I. Du Pont De Nemours And Company Electron field emitter and compositions related thereto
US6798127B2 (en) * 2002-10-09 2004-09-28 Nano-Proprietary, Inc. Enhanced field emission from carbon nanotubes mixed with particles
BR0315486B1 (pt) * 2002-11-15 2012-05-02 processo para a fabricação de um dispositivo eletrÈnico e dispositivo eletrÈnico.
US20040170925A1 (en) * 2002-12-06 2004-09-02 Roach David Herbert Positive imageable thick film compositions
EP1586112B1 (en) 2003-01-22 2006-12-27 E.I. du Pont de Nemours and Company Binder diffusion patterning of a thick film paste layer
US7303854B2 (en) 2003-02-14 2007-12-04 E.I. Du Pont De Nemours And Company Electrode-forming composition for field emission type of display device, and method using such a composition
US20100098877A1 (en) * 2003-03-07 2010-04-22 Cooper Christopher H Large scale manufacturing of nanostructured material
TWI223308B (en) * 2003-05-08 2004-11-01 Ind Tech Res Inst Manufacturing process of carbon nanotube field emission transistor
WO2004102604A1 (en) * 2003-05-16 2004-11-25 Koninklijke Philips Electronics N.V. Field emission display and method of manufacturing the same
KR100551229B1 (ko) * 2003-06-26 2006-02-10 주식회사 디피아이 솔루션스 디스플레이용 유기 투명 전극의 제조방법
CN100585772C (zh) * 2003-07-08 2010-01-27 纳幕尔杜邦公司 采用接触印刷用厚膜膏填塞孔或槽的方法
KR20050014430A (ko) * 2003-07-31 2005-02-07 삼성에스디아이 주식회사 평판 표시소자의 전자 방출원 형성용 조성물 및 이로부터제조되는 전자 방출원
US7452735B2 (en) * 2003-09-12 2008-11-18 Applied Nanotech Holdings, Inc. Carbon nanotube deposition with a stencil
US20050064167A1 (en) * 2003-09-12 2005-03-24 Nano-Proprietary, Inc. Carbon nanotubes
KR20060121910A (ko) * 2003-09-12 2006-11-29 나노-프로프리어터리, 인크. 웰 형성
KR100960496B1 (ko) * 2003-10-31 2010-06-01 엘지디스플레이 주식회사 액정표시소자의 러빙방법
KR20050060287A (ko) * 2003-12-16 2005-06-22 삼성에스디아이 주식회사 카본나노튜브 에미터의 형성방법
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
KR20050087376A (ko) * 2004-02-26 2005-08-31 삼성에스디아이 주식회사 평판표시소자의 전자방출원 형성용 조성물 및 이를 이용한전자방출원
KR100586659B1 (ko) * 2004-04-01 2006-06-07 주식회사 디피아이 솔루션스 유기 전극 코팅용 조성물 및 이를 이용한 고투명성 유기전극의 제조방법
KR20050114032A (ko) * 2004-05-31 2005-12-05 삼성에스디아이 주식회사 고분자 재료를 이용한 플렉서블 이미터 및 그 제조 방법
US20060292297A1 (en) * 2004-07-06 2006-12-28 Nano-Proprietary, Inc. Patterning CNT emitters
JP2006059752A (ja) * 2004-08-23 2006-03-02 Hitachi Displays Ltd 自発光平面表示装置
US20060073893A1 (en) * 2004-10-01 2006-04-06 Dahl John M Touchscreen audio feedback in a wagering game system
KR100856671B1 (ko) * 2004-11-10 2008-09-04 히다치 훈마츠 야킨 가부시키가이샤 전자 방출원 형성용 조성물 및 전자 방출원용 피막의형성방법
JP2006167710A (ja) * 2004-11-22 2006-06-29 Nissin Kogyo Co Ltd 薄膜の製造方法及び薄膜が形成された基材、電子放出材料及びその製造方法並びに電子放出装置
KR100670330B1 (ko) * 2005-04-12 2007-01-16 삼성에스디아이 주식회사 전자 방출원 및 상기 전자 방출원을 포함하는 전자 방출소자
JP2006310124A (ja) * 2005-04-28 2006-11-09 Sony Corp 微小電子源装置の製造方法
KR100738055B1 (ko) * 2005-05-18 2007-07-12 삼성에스디아이 주식회사 전자소자의 적층 형성 방법 및 이를 이용한 ｆｅｄ의제조방법
JP2007080563A (ja) * 2005-09-12 2007-03-29 Mitsubishi Electric Corp 冷陰極表示装置の製造装置および製造方法
JP2007115675A (ja) * 2005-09-21 2007-05-10 Toray Ind Inc 電子放出源用ペースト
KR20070046598A (ko) * 2005-10-31 2007-05-03 삼성에스디아이 주식회사 카본계 물질 및 광전소자를 포함한 전자 방출원, 상기 전자방출원의 제조 방법, 상기 전자 방출원을 구비한 전자방출 소자 및 상기 전자 방출원을 구비한 전자 방출디스플레이 장치
KR20070047521A (ko) * 2005-11-02 2007-05-07 삼성에스디아이 주식회사 전계방출형 백라이트 유닛 및 구동방법
KR100911370B1 (ko) * 2005-12-06 2009-08-10 한국전자통신연구원 고 신뢰성 ｃｎｔ 페이스트의 제조 방법 및 ｃｎｔ 에미터제조 방법
CN1992099B (zh) * 2005-12-30 2010-11-10 鸿富锦精密工业（深圳）有限公司 导电复合材料及含有该导电复合材料的电缆
US20070154625A1 (en) * 2006-01-05 2007-07-05 Teco Electric & Machinery Co., Ltd. Method for activating electron emission surface of field emission display
CN100573808C (zh) * 2006-03-22 2009-12-23 清华大学 场发射照明光源及其制造方法
CN100573809C (zh) * 2006-03-24 2009-12-23 清华大学 场发射平面显示光源及其制造方法
CN100573777C (zh) * 2006-03-31 2009-12-23 清华大学 场发射电子源及其制造方法
CN100561657C (zh) * 2006-03-31 2009-11-18 清华大学 场发射灯管及其制造方法
CN101086939B (zh) * 2006-06-09 2010-05-12 清华大学 场发射元件及其制备方法
TW200802506A (en) * 2006-06-13 2008-01-01 Nat Univ Tsing Hua Method of making field emission cathode component with vertical carbon nano tube array and product thereof
CN101093764B (zh) * 2006-06-23 2012-03-28 清华大学 场发射元件及其制备方法
CN101093765B (zh) * 2006-06-23 2011-06-08 清华大学 场发射元件及其制备方法
CA2658578A1 (en) * 2006-07-18 2008-09-04 The University Of Southern California Organic optoelectronic device electrodes with nanotubes
CN101188179B (zh) * 2006-11-15 2010-05-26 清华大学 场发射电子源的制造方法
CN101192492B (zh) * 2006-11-22 2010-09-29 清华大学 透明导电膜的制备方法
CN101192493B (zh) * 2006-11-22 2011-02-02 鸿富锦精密工业（深圳）有限公司 阳极装置及其制造方法
KR100777113B1 (ko) 2006-12-07 2007-11-19 한국전자통신연구원 미세패터닝이 가능한 고 신뢰성의 ｃｎｔ 에미터 제조 방법
US7868333B2 (en) * 2006-12-21 2011-01-11 E.I. Du Pont De Nemours And Company Process for demetallization of carbon nanotubes
WO2008118536A2 (en) * 2007-02-02 2008-10-02 The Regents Of The University Of California Method for producing active glass nanoparticles by laser ablation
JP2010519416A (ja) * 2007-02-24 2010-06-03 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー カーボンナノチューブの電気化学的堆積方法
JP5272349B2 (ja) 2007-02-26 2013-08-28 東レ株式会社 電子放出源用ペースト及び電子放出素子
CN101802956A (zh) * 2007-08-23 2010-08-11 纳幕尔杜邦公司 具有保护蒸气的场发射装置
US8540922B2 (en) * 2007-08-27 2013-09-24 Hewlett-Packard Development Company, L.P. Laser patterning of a carbon nanotube layer
US20090061161A1 (en) * 2007-08-27 2009-03-05 Lynn Sheehan Laser patterning of a cross-linked polymer
US7556788B2 (en) * 2007-10-05 2009-07-07 E.I. Du Pont De Nemours And Company Process for preparing boron carbon nanorods
US20100264805A1 (en) * 2007-10-05 2010-10-21 E.I. Du Pont De Nemours And Company Under-gate field emission triode with charge dissipation layer
CN101861282A (zh) * 2007-11-15 2010-10-13 纳幕尔杜邦公司 碳纳米管的保护
KR100889527B1 (ko) * 2007-11-21 2009-03-19 삼성에스디아이 주식회사 발광 장치 및 이 발광 장치를 광원으로 사용하는 표시 장치
WO2009070632A1 (en) 2007-11-26 2009-06-04 E. I. Du Pont De Nemours And Company Cathode assembly containing an ultraviolet light-blocking dielectric layer
US8298034B2 (en) 2007-12-21 2012-10-30 E I Du Pont De Nemours And Company Patterning a thick film paste in surface features
WO2009143094A2 (en) 2008-05-19 2009-11-26 E. I. Du Pont De Nemours And Company Co-processable photoimageable silver and carbon nanotube compositions and method for field emission devices
CN101604727B (zh) * 2008-06-13 2011-01-26 鸿富锦精密工业（深圳）有限公司 电致伸缩复合材料及其制备方法
US20100000441A1 (en) 2008-07-01 2010-01-07 Jang Bor Z Nano graphene platelet-based conductive inks
US8252165B2 (en) * 2008-08-22 2012-08-28 E I Du Pont De Nemours And Company Method for the electrochemical deposition of carbon nanotubes
US8318049B2 (en) 2008-09-30 2012-11-27 Samsung Electronics Co., Ltd. Composition for forming electron emission source, electron emission source including the composition, method of preparing the electron emission source, and field emission device including the electron emission source
KR101065280B1 (ko) 2008-11-24 2011-09-19 한국표준과학연구원 탄소나노튜브를 이용한 유연소자 및 그 제조방법
KR101078079B1 (ko) * 2008-12-10 2011-10-28 엘에스전선 주식회사 은 수식 탄소 나노튜브 함유 전도성 페이스트 조성물
JP2010180263A (ja) * 2009-02-03 2010-08-19 Nec Corp カーボンナノチューブインク組成物及びカーボンナノチューブ膜の製造方法
US8414757B2 (en) * 2009-02-27 2013-04-09 E I Du Pont De Nemours And Company Process for improving the oxidation resistance of carbon nanotubes
KR101759180B1 (ko) * 2009-04-03 2017-07-18 보르벡크 머터리얼스 코포레이션 그라핀 시트 및 흑연을 함유하는 중합체 조성물
US20100285715A1 (en) * 2009-05-08 2010-11-11 Yuan-Yao Li Method of manufacturing carbon nanotube (cnt) field emission source
EP2478545A4 (en) * 2009-09-18 2013-03-13 Univ Akron DEVICES AND METHODS FOR FIELD EMISSION OF CARBON NANOTUBES
US8853540B2 (en) 2011-04-19 2014-10-07 Commscope, Inc. Of North Carolina Carbon nanotube enhanced conductors for communications cables and related communications cables and methods
JP5854503B2 (ja) * 2011-11-24 2016-02-09 国立大学法人東北大学 ナノ複合材料およびナノ複合材料の製造方法
WO2014176474A1 (en) * 2013-04-25 2014-10-30 GM Global Technology Operations LLC Ambient display
DE102016013279A1 (de) * 2016-11-08 2018-05-09 H&P Advanced Technology GmbH Verfahren zur Herstellung eines Elektronenemitters mit einer Kohlenstoffnanoröhren enthaltenden Beschichtung
EP3933881A1 (en) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG X-ray source with multiple grids

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2204081A (en) * 1938-10-22 1940-06-11 Metropolis Bending Company Folding table
US4857799A (en) * 1986-07-30 1989-08-15 Sri International Matrix-addressed flat panel display
US5015912A (en) * 1986-07-30 1991-05-14 Sri International Matrix-addressed flat panel display
JPS6426682A (en) * 1987-07-22 1989-01-27 Murata Manufacturing Co Resistance coating
US5618875A (en) * 1990-10-23 1997-04-08 Catalytic Materials Limited High performance carbon filament structures
US5413866A (en) * 1990-10-23 1995-05-09 Baker; R. Terry K. High performance carbon filament structures
US5149584A (en) * 1990-10-23 1992-09-22 Baker R Terry K Carbon fiber structures having improved interlaminar properties
US5458784A (en) * 1990-10-23 1995-10-17 Catalytic Materials Limited Removal of contaminants from aqueous and gaseous streams using graphic filaments
JPH04198271A (ja) 1990-11-27 1992-07-17 Mitsui Mining Co Ltd 導電性ペースト組成物
US5449970A (en) 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
JPH0653106B2 (ja) 1992-06-22 1994-07-20 株式会社エイ・ティ・アール通信システム研究所 視線情報解析装置
JPH0748346B2 (ja) 1992-11-19 1995-05-24 日本電気株式会社 電界放出冷陰極素子
KR100284830B1 (ko) 1992-12-23 2001-04-02 씨.알. 클라인 쥬니어 평면의 필드 방사 음극을 사용하는 3극 진공관 구조 평판 디스플레이
AU5897594A (en) 1993-06-02 1994-12-20 Microelectronics And Computer Technology Corporation Amorphic diamond film flat field emission cathode
US5378408A (en) * 1993-07-29 1995-01-03 E. I. Du Pont De Nemours And Company Lead-free thick film paste composition
JP3309231B2 (ja) * 1993-08-25 2002-07-29 タツタ電線株式会社 金属酸化物成形体との密着性の良い導電塗料
US6074893A (en) * 1993-09-27 2000-06-13 Sumitomo Metal Industries, Ltd. Process for forming fine thick-film conductor patterns
US5486126A (en) * 1994-11-18 1996-01-23 Micron Display Technology, Inc. Spacers for large area displays
US5709577A (en) * 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
JPH08264109A (ja) 1995-03-20 1996-10-11 Sony Corp 粒子放出装置、電界放出型装置及びこれらの製造方法
JP3302278B2 (ja) * 1995-12-12 2002-07-15 キヤノン株式会社 電子放出素子の製造方法並びに該製造方法を用いた電子源及び画像形成装置の製造方法
US6156433A (en) * 1996-01-26 2000-12-05 Dai Nippon Printing Co., Ltd. Electrode for plasma display panel and process for producing the same
JPH09326231A (ja) * 1996-04-05 1997-12-16 Canon Inc 電子放出素子及び電子源及び画像形成装置の製造方法
DE69728410T2 (de) * 1996-08-08 2005-05-04 William Marsh Rice University, Houston Makroskopisch manipulierbare, aus nanoröhrenanordnungen hergestellte vorrichtungen
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
JP3421549B2 (ja) 1996-09-18 2003-06-30 株式会社東芝 真空マイクロ装置
KR100365444B1 (ko) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 진공마이크로장치와이를이용한화상표시장치
US6379745B1 (en) * 1997-02-20 2002-04-30 Parelec, Inc. Low temperature method and compositions for producing electrical conductors
JP3790047B2 (ja) 1998-07-17 2006-06-28 株式会社ノリタケカンパニーリミテド 電子放出源の製造方法
EP1361592B1 (en) * 1997-09-30 2006-05-24 Noritake Co., Ltd. Method of manufacturing an electron-emitting source
CN1281586A (zh) 1997-12-15 2001-01-24 纳幕尔杜邦公司 离子轰击式石墨电子发射体
US6409567B1 (en) * 1997-12-15 2002-06-25 E.I. Du Pont De Nemours And Company Past-deposited carbon electron emitters
CN1281585A (zh) * 1997-12-15 2001-01-24 纳幕尔杜邦公司 离子轰击式石墨电子发射体
US7094370B2 (en) * 1998-02-24 2006-08-22 Cabot Corporation Method for the production of metal-carbon composite powders
JP3730391B2 (ja) * 1998-03-09 2006-01-05 株式会社ノリタケカンパニーリミテド 蛍光表示装置の製造方法
US6174449B1 (en) * 1998-05-14 2001-01-16 Micron Technology, Inc. Magnetically patterned etch mask
JP3569135B2 (ja) 1998-09-09 2004-09-22 株式会社東芝 電界放出陰極の製造方法
JP3497740B2 (ja) 1998-09-09 2004-02-16 株式会社東芝 カーボンナノチューブの製造方法及び電界放出型冷陰極装置の製造方法
US6630772B1 (en) * 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
JP4409003B2 (ja) * 1998-09-24 2010-02-03 三星エスディアイ株式会社 フィールドエミッションディスプレイ用エレクトロンエミッタ組成物及びこれを利用したエレクトロンエミッタの製造方法
JP4069532B2 (ja) 1999-01-11 2008-04-02 松下電器産業株式会社 カーボンインキ、電子放出素子、電子放出素子の製造方法、および画像表示装置
US6250984B1 (en) * 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
KR100691301B1 (ko) * 1999-04-21 2007-03-12 가부시키가이샤 닛뽄 슈터 반송 시스템
JP4043141B2 (ja) 1999-04-27 2008-02-06 双葉電子工業株式会社 電子放出源の製造方法及び電子放出源
JP3553414B2 (ja) 1999-04-28 2004-08-11 シャープ株式会社 電子源アレイと、その製造方法、及び前記電子源アレイまたはその製造方法を用いて形成される画像形成装置
JP2000348647A (ja) * 1999-06-02 2000-12-15 Sharp Corp 画像形成装置
US6504292B1 (en) * 1999-07-15 2003-01-07 Agere Systems Inc. Field emitting device comprising metallized nanostructures and method for making the same
JP3468723B2 (ja) 1999-07-16 2003-11-17 双葉電子工業株式会社 電子放出源の製造方法、電子放出源及び蛍光発光型表示器
US6312303B1 (en) * 1999-07-19 2001-11-06 Si Diamond Technology, Inc. Alignment of carbon nanotubes
JP3611503B2 (ja) * 1999-07-21 2005-01-19 シャープ株式会社 電子源及びその製造方法
JP4063451B2 (ja) 1999-07-26 2008-03-19 双葉電子工業株式会社 カーボンナノチューブのパターン形成方法
US6277318B1 (en) * 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
US6359383B1 (en) * 1999-08-19 2002-03-19 Industrial Technology Research Institute Field emission display device equipped with nanotube emitters and method for fabricating
US6664722B1 (en) * 1999-12-02 2003-12-16 Si Diamond Technology, Inc. Field emission material
US6652883B2 (en) * 2000-03-13 2003-11-25 Biocure, Inc. Tissue bulking and coating compositions
US6419717B2 (en) * 2000-03-17 2002-07-16 Hyperion Catalysis International, Inc. Carbon nanotubes in fuels
JP3730476B2 (ja) * 2000-03-31 2006-01-05 株式会社東芝 電界放出型冷陰極及びその製造方法
WO2001093292A1 (en) 2000-05-26 2001-12-06 E.I. Dupont De Nemours And Company Catalytically grown carbon fiber field emitters and field emitter cathodes made therefrom
US7449081B2 (en) * 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
US7161285B2 (en) 2000-11-20 2007-01-09 Nec Corporation CNT film and field-emission cold cathode comprising the same
US20040018371A1 (en) * 2002-04-12 2004-01-29 Si Diamond Technology, Inc. Metallization of carbon nanotubes for field emission applications
US6436221B1 (en) * 2001-02-07 2002-08-20 Industrial Technology Research Institute Method of improving field emission efficiency for fabricating carbon nanotube field emitters
US6739932B2 (en) * 2001-06-07 2004-05-25 Si Diamond Technology, Inc. Field emission display using carbon nanotubes and methods of making the same
EP1451844A4 (en) 2001-06-14 2008-03-12 Hyperion Catalysis Int FIELD EMISSION DEVICES USING MODIFIED CARBON NANOTUBES
US7276844B2 (en) * 2001-06-15 2007-10-02 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
KR100416141B1 (ko) * 2001-06-22 2004-01-31 삼성에스디아이 주식회사 카본계 물질로 형성된 에미터를 갖는 전계 방출표시소자의 제조방법
JP4894987B2 (ja) * 2001-06-29 2012-03-14 三洋電機株式会社 表示用パネルの製造方法
US20060252163A1 (en) * 2001-10-19 2006-11-09 Nano-Proprietary, Inc. Peelable photoresist for carbon nanotube cathode
US7462498B2 (en) * 2001-10-19 2008-12-09 Applied Nanotech Holdings, Inc. Activation of carbon nanotubes for field emission applications
US7195938B2 (en) * 2001-10-19 2007-03-27 Nano-Proprietary, Inc. Activation effect on carbon nanotubes
JP2003168355A (ja) * 2001-11-30 2003-06-13 Sony Corp 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法
US6975063B2 (en) * 2002-04-12 2005-12-13 Si Diamond Technology, Inc. Metallization of carbon nanotubes for field emission applications
US6798127B2 (en) * 2002-10-09 2004-09-28 Nano-Proprietary, Inc. Enhanced field emission from carbon nanotubes mixed with particles
JP2004178972A (ja) 2002-11-27 2004-06-24 Sony Corp 電子放出素子の製造方法及び表示装置の製造方法
TWI223308B (en) * 2003-05-08 2004-11-01 Ind Tech Res Inst Manufacturing process of carbon nanotube field emission transistor
WO2004102604A1 (en) 2003-05-16 2004-11-25 Koninklijke Philips Electronics N.V. Field emission display and method of manufacturing the same
KR20050060287A (ko) * 2003-12-16 2005-06-22 삼성에스디아이 주식회사 카본나노튜브 에미터의 형성방법
US7125308B2 (en) * 2003-12-18 2006-10-24 Nano-Proprietary, Inc. Bead blast activation of carbon nanotube cathode
US7137660B2 (en) * 2004-07-20 2006-11-21 Rain Riders, Llc Convertible top for an all-terrain vehicle
KR100590579B1 (ko) 2005-02-01 2006-06-19 삼성에스디아이 주식회사 탄소나노튜브 에미터를 구비한 전계방출소자의 제조방법
US7413613B2 (en) * 2005-03-28 2008-08-19 Teco Nanotech Co., Ltd Method for activating electron source surface of field emission display

Also Published As

Publication number Publication date
US7449081B2 (en) 2008-11-11
US8011990B2 (en) 2011-09-06
CN101093766A (zh) 2007-12-26
KR100714325B1 (ko) 2007-05-04
US20080299864A1 (en) 2008-12-04
WO2001099146A3 (en) 2003-08-21
JP2011187452A (ja) 2011-09-22
US8070906B2 (en) 2011-12-06
CN1447978A (zh) 2003-10-08
CN101093766B (zh) 2012-02-22
US20060049741A1 (en) 2006-03-09
KR20030036236A (ko) 2003-05-09
WO2001099146A2 (en) 2001-12-27
JP2008027919A (ja) 2008-02-07
JP2004504690A (ja) 2004-02-12
US20070160758A1 (en) 2007-07-12
JP2011100737A (ja) 2011-05-19
AU2001271339A1 (en) 2002-01-02
EP1356489A2 (en) 2003-10-29
HK1059499A1 (en) 2004-07-02
US20090104834A1 (en) 2009-04-23
JP2011071124A (ja) 2011-04-07
US8529798B2 (en) 2013-09-10
US7449082B2 (en) 2008-11-11
JP4262976B2 (ja) 2009-05-13
JP2011175979A (ja) 2011-09-08
JP5209911B2 (ja) 2013-06-12
US20020074932A1 (en) 2002-06-20
CN100341094C (zh) 2007-10-03

Similar Documents

Publication Publication Date Title
BR0112191A (pt) Processo para aumentar a emissão de um emissor de campos de elétrons, emissor de campos de elétrons, triodo de emissão de campos, dispositivo de iluminação, pasta imprimìvel em tela, processo para reduzir postos quentes de emissão em um emissor de campos de elétrons e processo para produzir um conjunto de cátodos
ATE464646T1 (de) Verbesserte feldemission von mit partikeln gemischten kohlenstoffnanoroehren
ATE321355T1 (de) Nanorohrbasierter elektronenemitter und verfahren zur dessen verwendung
BRPI0714357A8 (pt) Método para produzir uma portadora de dados e portadora de dados produzida a partir do mesmo
CA2351037A1 (en) Microwave vacuum tube device employing grid-modulated cold cathode source having nanotube emitters
EP0913508A3 (en) Carbon nanotube device, manufacturing method of carbon nanotube device, and electron emitting device
ATE501519T1 (de) Herstellungsverfahren einer elektronen emittierenden einrichtung
ATE252768T1 (de) Verfahren zur herstellung einer elektronen emittierenden vorrichtung,
WO2003062139A3 (en) Activation effect on carbon nanotubes
BR0215271A (pt) Material em folha e aparelhos e métodos para produzir e processar esse material em folha
WO2002073646A3 (en) Field electron emission materials and devices
TW200633175A (en) Integrated circuit nanotube-based substrate
EP1047097A4 (en) ELECTRONIC EMITTING DEVICE, ELECTRON EMITTING SOURCE, IMAGE INDICATOR AND MANUFACTURING METHOD THEREFOR
BR0214203A (pt) Composições de revestimento, pasta, métodos para produzir uma composição de revestimento, método para produzir uma pasta, método para produzir um revestimento em um substrato
EP1315191A3 (en) Composite for paste including carbon nanotubes, electron emitting device using the same, and manufacturing method thereof
WO2005055274A3 (de) Glühlampe mit kohlenstoff-kreisprozess
KR920018798A (ko) 평면형 전자방출 소자의 제조방법
EP1003197A3 (en) Substrate for electron source, electron source and image forming apparatus, and manufacturing method thereof
ATE275530T1 (de) Verfahren zur bildung einer kohlenstoffnanoröhren enthaltenden beschichtung auf einem substrat
ES2186402T3 (es) Plancha de vapor.
BR0309424A (pt) Composição de matéria, pelìcula emissora de elétrons, triodo de emissão de campo e processo para a fabricação de uma pelìcula emissora de elétrons
PL369239A1 (en) A method for the determination of multiple analytes
BR0109100A (pt) Correção de distorções no processamento de formulários
BR9914849A (pt) Dispositivo eletroluminescente e processo para produzir o mesmo
WO2005020295A3 (en) Filling vias with thick film paste using contact printing

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 12A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2258 DE 15/04/2014.