ATE464646T1 - Verbesserte feldemission von mit partikeln gemischten kohlenstoffnanoroehren - Google Patents

Verbesserte feldemission von mit partikeln gemischten kohlenstoffnanoroehren

Info

Publication number
ATE464646T1
ATE464646T1 AT03768525T AT03768525T ATE464646T1 AT E464646 T1 ATE464646 T1 AT E464646T1 AT 03768525 T AT03768525 T AT 03768525T AT 03768525 T AT03768525 T AT 03768525T AT E464646 T1 ATE464646 T1 AT E464646T1
Authority
AT
Austria
Prior art keywords
field emission
present
particles
cathode
carbon nanotube
Prior art date
Application number
AT03768525T
Other languages
English (en)
Inventor
Dongsheng Mao
Richard Fink
Zvi Yaniv
Original Assignee
Applied Nanotech Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Nanotech Holdings Inc filed Critical Applied Nanotech Holdings Inc
Application granted granted Critical
Publication of ATE464646T1 publication Critical patent/ATE464646T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
    • C23C18/127—Preformed particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2209/00—Apparatus and processes for manufacture of discharge tubes
    • H01J2209/02—Manufacture of cathodes
    • H01J2209/022—Cold cathodes
    • H01J2209/0223—Field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes
    • H01J2329/0407—Field emission cathodes
    • H01J2329/0439—Field emission cathodes characterised by the emitter material
    • H01J2329/0444—Carbon types
    • H01J2329/0455—Carbon nanotubes (CNTs)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/952—Display

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
AT03768525T 2002-10-09 2003-10-09 Verbesserte feldemission von mit partikeln gemischten kohlenstoffnanoroehren ATE464646T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41724602P 2002-10-09 2002-10-09
US10/680,941 US6798127B2 (en) 2002-10-09 2003-10-07 Enhanced field emission from carbon nanotubes mixed with particles
PCT/US2003/032104 WO2004034417A2 (en) 2002-10-09 2003-10-09 Enhanced field emission from carbon nanotubes mixed with particles

Publications (1)

Publication Number Publication Date
ATE464646T1 true ATE464646T1 (de) 2010-04-15

Family

ID=32073442

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03768525T ATE464646T1 (de) 2002-10-09 2003-10-09 Verbesserte feldemission von mit partikeln gemischten kohlenstoffnanoroehren

Country Status (9)

Country Link
US (2) US6798127B2 (de)
EP (1) EP1556878B1 (de)
JP (3) JP2006502554A (de)
KR (1) KR100982631B1 (de)
CN (1) CN1711620B (de)
AT (1) ATE464646T1 (de)
AU (1) AU2003291638A1 (de)
DE (1) DE60332142D1 (de)
WO (1) WO2004034417A2 (de)

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8958917B2 (en) 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US9056783B2 (en) 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US7449081B2 (en) 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
US6885022B2 (en) * 2000-12-08 2005-04-26 Si Diamond Technology, Inc. Low work function material
US6723299B1 (en) 2001-05-17 2004-04-20 Zyvex Corporation System and method for manipulating nanotubes
US7276844B2 (en) * 2001-06-15 2007-10-02 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
KR100796678B1 (ko) * 2001-09-28 2008-01-21 삼성에스디아이 주식회사 평면 표시 소자용 전자 방출원 조성물, 이를 이용한 평면 표시 소자용 전자 방출원의 제조방법 및 이를 포함하는 평면 표시 소자
US7462498B2 (en) * 2001-10-19 2008-12-09 Applied Nanotech Holdings, Inc. Activation of carbon nanotubes for field emission applications
US7195938B2 (en) * 2001-10-19 2007-03-27 Nano-Proprietary, Inc. Activation effect on carbon nanotubes
US8062697B2 (en) * 2001-10-19 2011-11-22 Applied Nanotech Holdings, Inc. Ink jet application for carbon nanotubes
US7854861B2 (en) * 2001-10-19 2010-12-21 Applied Nanotech Holdings, Inc. Well formation
US7317277B2 (en) * 2002-04-24 2008-01-08 E.I. Du Pont De Nemours And Company Electron field emitter and compositions related thereto
US20040034177A1 (en) 2002-05-02 2004-02-19 Jian Chen Polymer and method for using the polymer for solubilizing nanotubes
US6905667B1 (en) 2002-05-02 2005-06-14 Zyvex Corporation Polymer and method for using the polymer for noncovalently functionalizing nanotubes
JP2004071433A (ja) * 2002-08-08 2004-03-04 Hitachi Ltd 画像表示装置およびその製造方法
US20060025549A1 (en) * 2002-11-15 2006-02-02 Kim Young H Process for using protective layers in the fabrication of electronic devices
US20040170925A1 (en) * 2002-12-06 2004-09-02 Roach David Herbert Positive imageable thick film compositions
US9574290B2 (en) 2003-01-13 2017-02-21 Nantero Inc. Methods for arranging nanotube elements within nanotube fabrics and films
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
KR100827861B1 (ko) 2003-05-22 2008-05-07 지벡스 퍼포먼스 머티리얼즈, 엘엘씨 나노복합물 및 이의 제조 방법
JP2004362801A (ja) * 2003-06-02 2004-12-24 Aisan Ind Co Ltd 粉末組成物、粉末組成物の製造方法及び製造装置
US6987302B1 (en) * 2003-07-01 2006-01-17 Yingjian Chen Nanotube with at least a magnetic nanoparticle attached to the nanotube's exterior sidewall and electronic devices made thereof
KR20050014430A (ko) * 2003-07-31 2005-02-07 삼성에스디아이 주식회사 평판 표시소자의 전자 방출원 형성용 조성물 및 이로부터제조되는 전자 방출원
US20050064167A1 (en) * 2003-09-12 2005-03-24 Nano-Proprietary, Inc. Carbon nanotubes
US7452735B2 (en) * 2003-09-12 2008-11-18 Applied Nanotech Holdings, Inc. Carbon nanotube deposition with a stencil
KR20050060287A (ko) * 2003-12-16 2005-06-22 삼성에스디아이 주식회사 카본나노튜브 에미터의 형성방법
US7125308B2 (en) * 2003-12-18 2006-10-24 Nano-Proprietary, Inc. Bead blast activation of carbon nanotube cathode
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
CN1954028A (zh) * 2004-04-13 2007-04-25 塞威公司 模块式聚（亚苯基亚乙炔基）的合成方法以及微调它们的电子性能以实现纳米材料的官能化
CN1329936C (zh) * 2004-04-19 2007-08-01 东南大学 粉末冶金法制备碳纳米管场发射冷阴极的方法
KR20050106670A (ko) * 2004-05-06 2005-11-11 삼성에스디아이 주식회사 Ｃｎｔ 전계방출소자의 제조방법
US7296576B2 (en) 2004-08-18 2007-11-20 Zyvex Performance Materials, Llc Polymers for enhanced solubility of nanomaterials, compositions and methods therefor
US7736209B2 (en) * 2004-09-10 2010-06-15 Applied Nanotech Holdings, Inc. Enhanced electron field emission from carbon nanotubes without activation
KR20060032402A (ko) * 2004-10-12 2006-04-17 삼성에스디아이 주식회사 카본나노튜브 에미터 및 그 제조방법과 이를 응용한전계방출소자 및 그 제조방법
US20060255715A1 (en) * 2004-11-09 2006-11-16 Nano-Proprietary, Inc. Carbon nanotube containing phosphor
US20080012461A1 (en) * 2004-11-09 2008-01-17 Nano-Proprietary, Inc. Carbon nanotube cold cathode
US7704547B1 (en) * 2004-12-07 2010-04-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration (Nasa) Carbon nanotube growth density control
US7718223B1 (en) 2004-12-07 2010-05-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration (Nasa) Control of carbon nanotube density and tower height in an array
US7777928B2 (en) * 2005-02-28 2010-08-17 Chad Byron Moore Electrode enhancements for fiber-based displays
KR101082437B1 (ko) 2005-03-02 2011-11-11 삼성에스디아이 주식회사 전자 방출원, 그 제조방법 및 이를 채용한 전자 방출 소자
US7686994B2 (en) * 2005-03-02 2010-03-30 Cabot Microelectronics Corporation Method of preparing a conductive film
US20060205313A1 (en) * 2005-03-10 2006-09-14 Nano-Proprietary, Inc. Forming a grid structure for a field emission device
KR20060104652A (ko) * 2005-03-31 2006-10-09 삼성에스디아이 주식회사 전자 방출 소자
KR20060104657A (ko) 2005-03-31 2006-10-09 삼성에스디아이 주식회사 전자 방출 소자
KR100670330B1 (ko) * 2005-04-12 2007-01-16 삼성에스디아이 주식회사 전자 방출원 및 상기 전자 방출원을 포함하는 전자 방출소자
US8033501B2 (en) * 2005-06-10 2011-10-11 The Boeing Company Method and apparatus for attaching electrically powered seat track cover to through hole seat track design
KR100695111B1 (ko) * 2005-06-18 2007-03-14 삼성에스디아이 주식회사 강유전체 냉음극 및 이를 구비한 강유전체 전계방출소자
KR100679209B1 (ko) * 2005-06-29 2007-02-05 이영희 얇은 금속층을 이용한 탄소나노튜브 필드 에미터의 제조 방법
WO2007047949A2 (en) * 2005-10-20 2007-04-26 The Trustees Of Boston College Methods for growing carbon nanotubes on single crystal substrates
US8148276B2 (en) 2005-11-28 2012-04-03 University Of Hawaii Three-dimensionally reinforced multifunctional nanocomposites
US20080299298A1 (en) * 2005-12-06 2008-12-04 Electronics And Telecommunications Research Institute Methods of Manufacturing Carbon Nanotube (Cnt) Paste and Emitter with High Reliability
US7658870B2 (en) 2005-12-20 2010-02-09 University Of Hawaii Polymer matrix composites with nano-scale reinforcements
US20070154625A1 (en) * 2006-01-05 2007-07-05 Teco Electric & Machinery Co., Ltd. Method for activating electron emission surface of field emission display
FR2895987B1 (fr) * 2006-01-11 2008-04-18 Univ Littoral Cote D Opale Suspension aqueuse stable de nanotubes de carbone pour former des films minces transparents conducteurs
JP2007200564A (ja) * 2006-01-23 2007-08-09 Mitsubishi Electric Corp 電子放出源の製造方法
CN100561657C (zh) * 2006-03-31 2009-11-18 清华大学 场发射灯管及其制造方法
JP4895663B2 (ja) * 2006-04-17 2012-03-14 三菱電機株式会社 電界放出型電子源の製造方法
KR20070105491A (ko) * 2006-04-26 2007-10-31 삼성에스디아이 주식회사 전자 방출원 형성용 조성물, 이를 이용하여 제조된 전자방출원 및 상기 전자 방출원을 포함하는 백라이트 유닛
KR20070106231A (ko) * 2006-04-28 2007-11-01 삼성에스디아이 주식회사 전자 방출원 형성용 조성물, 이를 이용하는 전자 방출원의제조 방법, 이 방법에 의해 제조된 전자 방출원 및 전자방출 소자
US7393699B2 (en) 2006-06-12 2008-07-01 Tran Bao Q NANO-electronics
KR100758341B1 (ko) 2006-06-16 2007-09-14 주식회사 어플라이드카본나노 금속-나노파이버 혼합체가 분산된 단분자 및 고분자 기지전도성 복합재와 그 제조 방법
JP2009541198A (ja) * 2006-06-30 2009-11-26 ユニバーシティー オブ ウロンゴング ナノ構造複合材
US20100006442A1 (en) * 2006-08-03 2010-01-14 Basf Se Process for application of a metal layer on a substrate
CA2668198A1 (en) * 2006-11-01 2008-11-27 Wake Forest University Solid state lighting compositions and systems
KR100777113B1 (ko) * 2006-12-07 2007-11-19 한국전자통신연구원 미세패터닝이 가능한 고 신뢰성의 ｃｎｔ 에미터 제조 방법
KR101281168B1 (ko) * 2007-01-05 2013-07-02 삼성전자주식회사 전계 방출 전극, 이의 제조 방법 및 이를 구비한 전계 방출소자
US8628746B2 (en) * 2007-04-12 2014-01-14 Raytheon Company System and method for dispersing nanostructures in a composite material
CN101285960B (zh) * 2007-04-13 2012-03-14 清华大学 场发射背光源
CN101303264B (zh) * 2007-05-09 2010-05-26 清华大学 电离规
US8636972B1 (en) * 2007-07-31 2014-01-28 Raytheon Company Making a nanomaterial composite
JP4896840B2 (ja) * 2007-09-03 2012-03-14 Ｓｍｋ株式会社 微細コネクタコンタクトの製造方法
CN101576423B (zh) * 2008-05-07 2010-12-29 清华大学 电离规
ES2332079B1 (es) * 2008-07-22 2010-10-27 Consejo Superior De Investigaciones Cientificas (Csic) Procedimiento para la dispersion de nanoparticulas en seco y la obtencion de estructuras jerarquicas y recubrimientos.
KR100977410B1 (ko) * 2008-09-08 2010-08-24 한국전기연구원 일액형 탄소나노튜브 바인더 혼합액을 이용한 전자 방출원 제조방법 및 이에 의해 제조된 전계 방출 소자용 탄소나노튜브 전자 방출원
US8300855B2 (en) * 2008-12-30 2012-10-30 Beijing Funate Innovation Technology Co., Ltd. Thermoacoustic module, thermoacoustic device, and method for making the same
CN101922755A (zh) * 2009-06-09 2010-12-22 清华大学 取暖墙
CN101990152B (zh) * 2009-08-07 2013-08-28 清华大学 热致发声装置及其制备方法
CN102006542B (zh) * 2009-08-28 2014-03-26 清华大学 发声装置
CN102023297B (zh) * 2009-09-11 2015-01-21 清华大学 声纳系统
KR101356260B1 (ko) * 2009-10-06 2014-01-28 코오롱인더스트리 주식회사 전극기판의 제조방법
CN102056064B (zh) * 2009-11-06 2013-11-06 清华大学 扬声器
CN102056065B (zh) * 2009-11-10 2014-11-12 北京富纳特创新科技有限公司 发声装置
CN102065363B (zh) * 2009-11-16 2013-11-13 北京富纳特创新科技有限公司 发声装置
JP5166461B2 (ja) * 2010-02-15 2013-03-21 国立大学法人 奈良先端科学技術大学院大学 電子放出部材、電子放出装置及び電子放出部材の製造方法
KR101724064B1 (ko) * 2010-02-18 2017-04-10 삼성전자주식회사 전도성 탄소나노튜브-금속 복합체 잉크
CN102917977A (zh) * 2010-03-30 2013-02-06 南泰若股份有限公司 用于在网络、织物和膜中对纳米元件进行排列的方法
US10661304B2 (en) 2010-03-30 2020-05-26 Nantero, Inc. Microfluidic control surfaces using ordered nanotube fabrics
CN102347180B (zh) * 2010-07-29 2015-06-10 海洋王照明科技股份有限公司 碳纳米管阴极材料及其制备方法
CN102208555B (zh) * 2011-04-18 2013-07-31 电子科技大学 一种柔性发光器件用基板及其制备方法
US20130243943A1 (en) * 2012-03-01 2013-09-19 Samir BOULFRAD Porous solid backbone impregnation for electrochemical energy conversion systems
CN102568977B (zh) * 2012-03-16 2015-02-04 福州大学 一种磁场辅助电泳沉积金属化碳纳米管阴极的制备方法
JP6089612B2 (ja) * 2012-11-14 2017-03-08 株式会社リコー インクジェット記録用インク、装置、記録方法
WO2014173793A1 (en) 2013-04-21 2014-10-30 Sht Smart High Tech Ab Method for coating of carbon nanomaterials
CN105097428B (zh) * 2014-04-24 2017-12-01 清华大学 碳纳米管复合膜
CN105097429B (zh) * 2014-04-24 2018-03-02 清华大学 碳纳米管复合膜的制备方法
CN105097939B (zh) * 2014-04-24 2018-08-17 清华大学 薄膜晶体管
DE102016013279A1 (de) 2016-11-08 2018-05-09 H&P Advanced Technology GmbH Verfahren zur Herstellung eines Elektronenemitters mit einer Kohlenstoffnanoröhren enthaltenden Beschichtung
JP6853749B2 (ja) * 2017-07-31 2021-03-31 シャープ株式会社 電子放出素子
CN109427518B (zh) * 2017-09-02 2020-10-20 南京理工大学 一种提高GaAs光电阴极量子效率和寿命的激活方法
EP3933881A1 (de) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG Röntgenquelle mit mehreren gittern
TW202232544A (zh) * 2020-09-30 2022-08-16 美商Ｎｃｘ公司 形成碳奈米管／金屬複合膜及含此之場發射陰極之方法
TW202229165A (zh) * 2020-09-30 2022-08-01 美商Ｎｃｘ公司 共電沉積形成場發射陰極方法
TW202231577A (zh) * 2020-10-30 2022-08-16 美商Ｎｃｘ公司 形成場發射陰極方法
TW202226350A (zh) 2020-11-17 2022-07-01 美商Ｎｃｘ公司 形成場發射陰極方法
JP7517277B2 (ja) * 2021-07-14 2024-07-17 トヨタ自動車株式会社 電極製造装置
US12230468B2 (en) 2022-06-30 2025-02-18 Varex Imaging Corporation X-ray system with field emitters and arc protection

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4405768A1 (de) * 1994-02-23 1995-08-24 Till Keesmann Feldemissionskathodeneinrichtung und Verfahren zu ihrer Herstellung
KR100365444B1 (ko) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 진공마이크로장치와이를이용한화상표시장치
DE69823441T2 (de) 1997-09-30 2004-09-23 Noritake Co., Ltd., Nagoya Elektronen emittierende Quelle
JP2000041056A (ja) * 1998-07-22 2000-02-08 Nec Corp 回線救済方法及びこれを用いるリングネットワーク
US6181055B1 (en) * 1998-10-12 2001-01-30 Extreme Devices, Inc. Multilayer carbon-based field emission electron device for high current density applications
EP1061554A1 (de) * 1999-06-15 2000-12-20 Iljin Nanotech Co., Ltd. Weisslichtquelle mit Kohlenstoffnanoröhren und Verfahren zur Herstellung
US6448709B1 (en) * 1999-09-15 2002-09-10 Industrial Technology Research Institute Field emission display panel having diode structure and method for fabricating
JP3481578B2 (ja) * 1999-10-12 2003-12-22 松下電器産業株式会社 電子放出素子およびそれを利用した電子源、電界放出型画像表示装置、蛍光灯、並びにそれらの製造方法
CN1287404C (zh) 1999-10-12 2006-11-29 松下电器产业株式会社 电子发射器件和利用它的电子源、图象显示装置、荧光灯及其制造方法
US6664722B1 (en) * 1999-12-02 2003-12-16 Si Diamond Technology, Inc. Field emission material
JP3730476B2 (ja) * 2000-03-31 2006-01-05 株式会社東芝 電界放出型冷陰極及びその製造方法
US7449081B2 (en) * 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
US6448701B1 (en) * 2001-03-09 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Self-aligned integrally gated nanofilament field emitter cell and array
US7195938B2 (en) * 2001-10-19 2007-03-27 Nano-Proprietary, Inc. Activation effect on carbon nanotubes

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