HK1045754B - 一次寫入薄膜存儲器 - Google Patents

一次寫入薄膜存儲器

Info

Publication number
HK1045754B
HK1045754B HK02107005.6A HK02107005A HK1045754B HK 1045754 B HK1045754 B HK 1045754B HK 02107005 A HK02107005 A HK 02107005A HK 1045754 B HK1045754 B HK 1045754B
Authority
HK
Hong Kong
Prior art keywords
write
film memory
once thin
thin
once
Prior art date
Application number
HK02107005.6A
Other languages
English (en)
Other versions
HK1045754A1 (en
Inventor
A Perner Frederick
C Anthony Thomas
Original Assignee
三星電子株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三星電子株式會社 filed Critical 三星電子株式會社
Publication of HK1045754A1 publication Critical patent/HK1045754A1/xx
Publication of HK1045754B publication Critical patent/HK1045754B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/146—Write once memory, i.e. allowing changing of memory content by writing additional bits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
HK02107005.6A 2000-09-15 2002-09-25 一次寫入薄膜存儲器 HK1045754B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/663,016 US6324093B1 (en) 2000-09-15 2000-09-15 Write-once thin-film memory

Publications (2)

Publication Number Publication Date
HK1045754A1 HK1045754A1 (en) 2002-12-06
HK1045754B true HK1045754B (zh) 2009-01-09

Family

ID=24660165

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02107005.6A HK1045754B (zh) 2000-09-15 2002-09-25 一次寫入薄膜存儲器

Country Status (8)

Country Link
US (1) US6324093B1 (zh)
EP (1) EP1189239B1 (zh)
JP (1) JP2002117684A (zh)
KR (1) KR20020021614A (zh)
CN (1) CN100380527C (zh)
DE (1) DE60112860T2 (zh)
HK (1) HK1045754B (zh)
TW (1) TW511089B (zh)

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US6940744B2 (en) * 2002-10-31 2005-09-06 Unity Semiconductor Corporation Adaptive programming technique for a re-writable conductive memory device
JP3766380B2 (ja) * 2002-12-25 2006-04-12 株式会社東芝 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法
JP4294307B2 (ja) * 2002-12-26 2009-07-08 株式会社ルネサステクノロジ 不揮発性記憶装置
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US8400860B2 (en) * 2010-07-20 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse memory
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Also Published As

Publication number Publication date
EP1189239A2 (en) 2002-03-20
KR20020021614A (ko) 2002-03-21
EP1189239B1 (en) 2005-08-24
EP1189239A3 (en) 2004-05-19
HK1045754A1 (en) 2002-12-06
CN1345071A (zh) 2002-04-17
JP2002117684A (ja) 2002-04-19
US6324093B1 (en) 2001-11-27
DE60112860T2 (de) 2006-07-13
TW511089B (en) 2002-11-21
CN100380527C (zh) 2008-04-09
DE60112860D1 (de) 2005-09-29

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Legal Events

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PE Patent expired

Effective date: 20210814