HK1004031A1 - Fabrication of customized integrated circuits - Google Patents
Fabrication of customized integrated circuitsInfo
- Publication number
- HK1004031A1 HK1004031A1 HK98103047A HK98103047A HK1004031A1 HK 1004031 A1 HK1004031 A1 HK 1004031A1 HK 98103047 A HK98103047 A HK 98103047A HK 98103047 A HK98103047 A HK 98103047A HK 1004031 A1 HK1004031 A1 HK 1004031A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- integrated circuits
- fabrication
- integrated circuit
- customized integrated
- circuit blank
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12542—More than one such component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
- Y10T428/12618—Plural oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL82113A IL82113A (en) | 1987-04-05 | 1987-04-05 | Fabrication of customized integrated circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1004031A1 true HK1004031A1 (en) | 1998-11-13 |
Family
ID=11057692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK98103047A HK1004031A1 (en) | 1987-04-05 | 1998-04-14 | Fabrication of customized integrated circuits |
Country Status (12)
Country | Link |
---|---|
US (1) | US4875971A (de) |
EP (1) | EP0336026B1 (de) |
JP (1) | JP2664403B2 (de) |
KR (1) | KR920004654B1 (de) |
AT (1) | ATE101750T1 (de) |
AU (1) | AU607747B2 (de) |
CA (3) | CA1294377C (de) |
ES (1) | ES2051297T3 (de) |
HK (1) | HK1004031A1 (de) |
IL (1) | IL82113A (de) |
IN (1) | IN171991B (de) |
ZA (1) | ZA882018B (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5679967A (en) * | 1985-01-20 | 1997-10-21 | Chip Express (Israel) Ltd. | Customizable three metal layer gate array devices |
IL86162A (en) * | 1988-04-25 | 1991-11-21 | Zvi Orbach | Customizable semiconductor devices |
US5545904A (en) * | 1986-01-17 | 1996-08-13 | Quick Technologies Ltd. | Personalizable gate array devices |
US5329152A (en) * | 1986-11-26 | 1994-07-12 | Quick Technologies Ltd. | Ablative etch resistant coating for laser personalization of integrated circuits |
JP3104232B2 (ja) * | 1988-03-31 | 2000-10-30 | アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド | 第2の金属マスクのみでの選択を可能にするゲートアレイ構造および方法 |
EP0339534A3 (de) * | 1988-04-25 | 1990-11-07 | Quick Technologies Ltd. | Abänderungsfähige Halbleiteranordnungen |
US5185291A (en) * | 1989-06-30 | 1993-02-09 | At&T Bell Laboratories | Method of making severable conductive path in an integrated-circuit device |
US5111273A (en) * | 1990-03-28 | 1992-05-05 | Quick Technologies Ltd. | Fabrication of personalizable integrated circuits |
US5094900A (en) * | 1990-04-13 | 1992-03-10 | Micron Technology, Inc. | Self-aligned sloped contact |
US5404033A (en) * | 1992-08-20 | 1995-04-04 | Swift Microelectronics Corporation | Application specific integrated circuit and placement and routing software with non-customizable first metal layer and vias and customizable second metal grid pattern |
US5541814A (en) * | 1993-10-08 | 1996-07-30 | Quick Technologies Ltd. | Personalizable multi-chip carrier including removable fuses |
JPH07235537A (ja) * | 1994-02-23 | 1995-09-05 | Mitsubishi Electric Corp | 表面が平坦化された半導体装置およびその製造方法 |
US5712192A (en) * | 1994-04-26 | 1998-01-27 | International Business Machines Corporation | Process for connecting an electrical device to a circuit substrate |
US6429113B1 (en) | 1994-04-26 | 2002-08-06 | International Business Machines Corporation | Method for connecting an electrical device to a circuit substrate |
IL109491A (en) * | 1994-05-01 | 1999-11-30 | Quick Tech Ltd | Customizable logic array device |
IL111708A (en) * | 1994-11-21 | 1998-03-10 | Chip Express Israel Ltd | Array mapping goes |
US5844416A (en) * | 1995-11-02 | 1998-12-01 | Sandia Corporation | Ion-beam apparatus and method for analyzing and controlling integrated circuits |
US6060330A (en) * | 1997-03-24 | 2000-05-09 | Clear Logic, Inc. | Method of customizing integrated circuits by selective secondary deposition of interconnect material |
US5840627A (en) * | 1997-03-24 | 1998-11-24 | Clear Logic, Inc. | Method of customizing integrated circuits using standard masks and targeting energy beams for single resist development |
US5911850A (en) * | 1997-06-20 | 1999-06-15 | International Business Machines Corporation | Separation of diced wafers |
US5985518A (en) * | 1997-03-24 | 1999-11-16 | Clear Logic, Inc. | Method of customizing integrated circuits using standard masks and targeting energy beams |
US5885749A (en) * | 1997-06-20 | 1999-03-23 | Clear Logic, Inc. | Method of customizing integrated circuits by selective secondary deposition of layer interconnect material |
US6242767B1 (en) | 1997-11-10 | 2001-06-05 | Lightspeed Semiconductor Corp. | Asic routing architecture |
US5953577A (en) * | 1998-09-29 | 1999-09-14 | Clear Logic, Inc. | Customization of integrated circuits |
US6486527B1 (en) | 1999-06-25 | 2002-11-26 | Macpherson John | Vertical fuse structure for integrated circuits containing an exposure window in the layer over the fuse structure to facilitate programming thereafter |
US7316934B2 (en) * | 2000-12-18 | 2008-01-08 | Zavitan Semiconductors, Inc. | Personalized hardware |
US6613611B1 (en) | 2000-12-22 | 2003-09-02 | Lightspeed Semiconductor Corporation | ASIC routing architecture with variable number of custom masks |
US6885043B2 (en) * | 2002-01-18 | 2005-04-26 | Lightspeed Semiconductor Corporation | ASIC routing architecture |
JP4179834B2 (ja) * | 2002-09-19 | 2008-11-12 | 株式会社リコー | 半導体装置の製造装置及び製造方法 |
US10522472B2 (en) | 2016-09-08 | 2019-12-31 | Asml Netherlands B.V. | Secure chips with serial numbers |
US10418324B2 (en) | 2016-10-27 | 2019-09-17 | Asml Netherlands B.V. | Fabricating unique chips using a charged particle multi-beamlet lithography system |
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US3731375A (en) * | 1966-03-31 | 1973-05-08 | Ibm | Monolithic integrated structure including fabrication and packaging therefor |
US3769108A (en) * | 1971-12-03 | 1973-10-30 | Bell Telephone Labor Inc | Manufacture of beam-crossovers for integrated circuits |
US3740523A (en) * | 1971-12-30 | 1973-06-19 | Bell Telephone Labor Inc | Encoding of read only memory by laser vaporization |
US4197555A (en) * | 1975-12-29 | 1980-04-08 | Fujitsu Limited | Semiconductor device |
NL7608901A (nl) * | 1976-08-11 | 1978-02-14 | Philips Nv | Werkwijze ter vervaardiging van een halfge- leiderinrichting en halfgeleiderinrichting vervaardigd door middel van een dergelijke werkwijze. |
US4124899A (en) * | 1977-05-23 | 1978-11-07 | Monolithic Memories, Inc. | Programmable array logic circuit |
JPS5925381B2 (ja) * | 1977-12-30 | 1984-06-16 | 富士通株式会社 | 半導体集積回路装置 |
US4240094A (en) * | 1978-03-20 | 1980-12-16 | Harris Corporation | Laser-configured logic array |
US4217393A (en) * | 1978-07-24 | 1980-08-12 | Rca Corporation | Method of inducing differential etch rates in glow discharge produced amorphous silicon |
JPS5548926A (en) * | 1978-10-02 | 1980-04-08 | Hitachi Ltd | Preparation of semiconductor device |
US4233671A (en) * | 1979-01-05 | 1980-11-11 | Stanford University | Read only memory and integrated circuit and method of programming by laser means |
US4238839A (en) * | 1979-04-19 | 1980-12-09 | National Semiconductor Corporation | Laser programmable read only memory |
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DE3036869C2 (de) * | 1979-10-01 | 1985-09-05 | Hitachi, Ltd., Tokio/Tokyo | Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren |
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US4356504A (en) * | 1980-03-28 | 1982-10-26 | International Microcircuits, Inc. | MOS Integrated circuit structure for discretionary interconnection |
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US4325181A (en) * | 1980-12-17 | 1982-04-20 | The United States Of America As Represented By The Secretary Of The Navy | Simplified fabrication method for high-performance FET |
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JPS5856355A (ja) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | 半導体集積回路装置 |
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JPS5867042A (ja) * | 1981-10-19 | 1983-04-21 | Toshiba Corp | 半導体装置の製造方法 |
JPS5885550A (ja) * | 1981-11-17 | 1983-05-21 | Sharp Corp | 積層集積回路素子の製造方法 |
US4585490A (en) * | 1981-12-07 | 1986-04-29 | Massachusetts Institute Of Technology | Method of making a conductive path in multi-layer metal structures by low power laser beam |
US4691434A (en) * | 1982-02-19 | 1987-09-08 | Lasarray Holding Ag | Method of making electrically conductive regions in monolithic semiconductor devices as applied to a semiconductor device |
JPS6044829B2 (ja) * | 1982-03-18 | 1985-10-05 | 富士通株式会社 | 半導体装置の製造方法 |
US4636404A (en) * | 1982-06-17 | 1987-01-13 | Mass. Institute Of Technology | Method and apparatus for forming low resistance lateral links in a semiconductor device |
US4450041A (en) * | 1982-06-21 | 1984-05-22 | The United States Of America As Represented By The Secretary Of The Navy | Chemical etching of transformed structures |
US4414059A (en) * | 1982-12-09 | 1983-11-08 | International Business Machines Corporation | Far UV patterning of resist materials |
US4590589A (en) * | 1982-12-21 | 1986-05-20 | Zoran Corporation | Electrically programmable read only memory |
US4520554A (en) * | 1983-02-10 | 1985-06-04 | Rca Corporation | Method of making a multi-level metallization structure for semiconductor device |
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JPS59201441A (ja) * | 1983-04-30 | 1984-11-15 | Toshiba Corp | 集束イオンビ−ムを用いたヒユ−ズ切断方法 |
JPS59214239A (ja) * | 1983-05-16 | 1984-12-04 | Fujitsu Ltd | 半導体装置の製造方法 |
CA1186070A (en) * | 1983-06-17 | 1985-04-23 | Iain D. Calder | Laser activated polysilicon connections for redundancy |
GB2143372B (en) * | 1983-07-12 | 1987-07-01 | Control Data Corp | Applying barrier metal to a semiconductor |
JPS6065545A (ja) * | 1983-09-21 | 1985-04-15 | Hitachi Micro Comput Eng Ltd | 半導体装置の製造方法 |
US4720470A (en) * | 1983-12-15 | 1988-01-19 | Laserpath Corporation | Method of making electrical circuitry |
US4700214A (en) * | 1983-12-15 | 1987-10-13 | Laserpath Corporation | Electrical circuitry |
JPS60176250A (ja) * | 1984-02-23 | 1985-09-10 | Toshiba Corp | 半導体装置の製造方法 |
FR2561443B1 (fr) * | 1984-03-19 | 1986-08-22 | Commissariat Energie Atomique | Procede pour interconnecter les zones actives et/ou les grilles d'un circuit integre cmos |
US4720908A (en) * | 1984-07-11 | 1988-01-26 | Texas Instruments Incorporated | Process for making contacts and interconnects for holes having vertical sidewalls |
US4751197A (en) * | 1984-07-18 | 1988-06-14 | Texas Instruments Incorporated | Make-link programming of semiconductor devices using laser enhanced thermal breakdown of insulator |
US4665295A (en) * | 1984-08-02 | 1987-05-12 | Texas Instruments Incorporated | Laser make-link programming of semiconductor devices |
EP0175604B1 (de) * | 1984-08-23 | 1989-07-19 | Fairchild Semiconductor Corporation | Verfahren zum Herstellen von Kontaktlöchern auf integrierten Schaltungen |
NL8402859A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van submicrongroeven in bijvoorbeeld halfgeleidermateriaal en met deze werkwijze verkregen inrichtingen. |
JPS61100947A (ja) * | 1984-10-22 | 1986-05-19 | Toshiba Corp | 半導体集積回路装置 |
IT1213261B (it) * | 1984-12-20 | 1989-12-14 | Sgs Thomson Microelectronics | Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione. |
GB2170649A (en) * | 1985-01-18 | 1986-08-06 | Intel Corp | Sputtered silicon as an anti-reflective coating for metal layer lithography |
US4692786A (en) * | 1985-02-07 | 1987-09-08 | Lindenfelser Timothy M | Semi-conductor device with sandwich passivation coating |
US4601778A (en) * | 1985-02-25 | 1986-07-22 | Motorola, Inc. | Maskless etching of polysilicon |
JPH0789567B2 (ja) * | 1985-02-25 | 1995-09-27 | 株式会社日立製作所 | 半導体装置 |
JPS6218732A (ja) * | 1985-07-15 | 1987-01-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 集積回路とその個性化方法 |
JPS62293740A (ja) * | 1986-06-13 | 1987-12-21 | Fujitsu Ltd | 半導体装置の製造方法 |
US4740485A (en) * | 1986-07-22 | 1988-04-26 | Monolithic Memories, Inc. | Method for forming a fuse |
US4758745B1 (en) * | 1986-09-19 | 1994-11-15 | Actel Corp | User programmable integrated circuit interconnect architecture and test method |
-
1987
- 1987-04-05 IL IL82113A patent/IL82113A/xx not_active IP Right Cessation
-
1988
- 1988-03-22 ZA ZA882018A patent/ZA882018B/xx unknown
- 1988-03-23 AU AU13508/88A patent/AU607747B2/en not_active Ceased
- 1988-03-23 US US07/172,235 patent/US4875971A/en not_active Expired - Lifetime
- 1988-03-24 CA CA000562405A patent/CA1294377C/en not_active Expired - Lifetime
- 1988-03-30 IN IN207/MAS/88A patent/IN171991B/en unknown
- 1988-04-02 KR KR1019880003730A patent/KR920004654B1/ko not_active IP Right Cessation
- 1988-04-05 JP JP63083969A patent/JP2664403B2/ja not_active Expired - Fee Related
- 1988-04-05 ES ES88303020T patent/ES2051297T3/es not_active Expired - Lifetime
- 1988-04-05 AT AT88303020T patent/ATE101750T1/de not_active IP Right Cessation
- 1988-04-05 EP EP88303020A patent/EP0336026B1/de not_active Expired - Lifetime
-
1990
- 1990-11-08 CA CA000615931A patent/CA1298669C/en not_active Expired - Lifetime
- 1990-11-08 CA CA000615932A patent/CA1300762C/en not_active Expired - Lifetime
-
1998
- 1998-04-14 HK HK98103047A patent/HK1004031A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA1300762C (en) | 1992-05-12 |
EP0336026A1 (de) | 1989-10-11 |
KR880013249A (ko) | 1988-11-30 |
CA1294377C (en) | 1992-01-14 |
KR920004654B1 (ko) | 1992-06-12 |
US4875971A (en) | 1989-10-24 |
CA1298669C (en) | 1992-04-07 |
IN171991B (de) | 1993-03-06 |
ZA882018B (en) | 1988-09-29 |
AU1350888A (en) | 1988-10-06 |
IL82113A0 (en) | 1987-10-30 |
AU607747B2 (en) | 1991-03-14 |
EP0336026B1 (de) | 1994-02-16 |
IL82113A (en) | 1992-08-18 |
ATE101750T1 (de) | 1994-03-15 |
JP2664403B2 (ja) | 1997-10-15 |
JPS6413739A (en) | 1989-01-18 |
ES2051297T3 (es) | 1994-06-16 |
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