GB2143372B - Applying barrier metal to a semiconductor - Google Patents

Applying barrier metal to a semiconductor

Info

Publication number
GB2143372B
GB2143372B GB8415370A GB8415370A GB2143372B GB 2143372 B GB2143372 B GB 2143372B GB 8415370 A GB8415370 A GB 8415370A GB 8415370 A GB8415370 A GB 8415370A GB 2143372 B GB2143372 B GB 2143372B
Authority
GB
United Kingdom
Prior art keywords
semiconductor
barrier metal
applying barrier
applying
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8415370A
Other versions
GB2143372A (en
GB8415370D0 (en
Inventor
John Shouse Shier
Walter Harry Jopke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Control Data Corp
Original Assignee
Control Data Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/513,208 external-priority patent/US4486946A/en
Application filed by Control Data Corp filed Critical Control Data Corp
Publication of GB8415370D0 publication Critical patent/GB8415370D0/en
Publication of GB2143372A publication Critical patent/GB2143372A/en
Application granted granted Critical
Publication of GB2143372B publication Critical patent/GB2143372B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
GB8415370A 1983-07-12 1984-06-15 Applying barrier metal to a semiconductor Expired GB2143372B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51320683A 1983-07-12 1983-07-12
US06/513,208 US4486946A (en) 1983-07-12 1983-07-12 Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing

Publications (3)

Publication Number Publication Date
GB8415370D0 GB8415370D0 (en) 1984-07-18
GB2143372A GB2143372A (en) 1985-02-06
GB2143372B true GB2143372B (en) 1987-07-01

Family

ID=27057779

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8415370A Expired GB2143372B (en) 1983-07-12 1984-06-15 Applying barrier metal to a semiconductor

Country Status (4)

Country Link
AU (1) AU563246B2 (en)
DE (1) DE3425599A1 (en)
FR (1) FR2549289B1 (en)
GB (1) GB2143372B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL82113A (en) * 1987-04-05 1992-08-18 Zvi Orbach Fabrication of customized integrated circuits
US5055423A (en) * 1987-12-28 1991-10-08 Texas Instruments Incorporated Planarized selective tungsten metallization system
JPH0748502B2 (en) * 1988-05-13 1995-05-24 三菱電機株式会社 Method for manufacturing semiconductor device
GB9105943D0 (en) * 1991-03-20 1991-05-08 Philips Nv A method of manufacturing a semiconductor device
JP3118785B2 (en) * 1991-05-23 2000-12-18 ソニー株式会社 Method of forming barrier metal structure
US5364817A (en) * 1994-05-05 1994-11-15 United Microelectronics Corporation Tungsten-plug process

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946426A (en) * 1973-03-14 1976-03-23 Harris Corporation Interconnect system for integrated circuits
FR2372511A1 (en) * 1976-11-25 1978-06-23 Comp Generale Electricite Emitters and base contacts formed on planar semiconductors - with only a short distance between emitter and base

Also Published As

Publication number Publication date
AU2979484A (en) 1985-01-17
FR2549289A1 (en) 1985-01-18
AU563246B2 (en) 1987-07-02
GB2143372A (en) 1985-02-06
DE3425599A1 (en) 1985-04-25
GB8415370D0 (en) 1984-07-18
FR2549289B1 (en) 1987-04-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee