FR2549289B1 - METHOD FOR APPLYING A DAM METAL TO THE SURFACE OF AN NPN TYPE SEMICONDUCTOR PELLET, AND NPN TYPE SEMICONDUCTOR DEVICE COMPRISING THIS METAL DAM - Google Patents

METHOD FOR APPLYING A DAM METAL TO THE SURFACE OF AN NPN TYPE SEMICONDUCTOR PELLET, AND NPN TYPE SEMICONDUCTOR DEVICE COMPRISING THIS METAL DAM

Info

Publication number
FR2549289B1
FR2549289B1 FR8410694A FR8410694A FR2549289B1 FR 2549289 B1 FR2549289 B1 FR 2549289B1 FR 8410694 A FR8410694 A FR 8410694A FR 8410694 A FR8410694 A FR 8410694A FR 2549289 B1 FR2549289 B1 FR 2549289B1
Authority
FR
France
Prior art keywords
type semiconductor
dam
metal
npn type
applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8410694A
Other languages
French (fr)
Other versions
FR2549289A1 (en
Inventor
Walter Harry Jopke Jr
John Shouse Shier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Control Data Corp
Original Assignee
Control Data Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/513,208 external-priority patent/US4486946A/en
Application filed by Control Data Corp filed Critical Control Data Corp
Publication of FR2549289A1 publication Critical patent/FR2549289A1/en
Application granted granted Critical
Publication of FR2549289B1 publication Critical patent/FR2549289B1/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR8410694A 1983-07-12 1984-07-05 METHOD FOR APPLYING A DAM METAL TO THE SURFACE OF AN NPN TYPE SEMICONDUCTOR PELLET, AND NPN TYPE SEMICONDUCTOR DEVICE COMPRISING THIS METAL DAM Expired FR2549289B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51320683A 1983-07-12 1983-07-12
US06/513,208 US4486946A (en) 1983-07-12 1983-07-12 Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing

Publications (2)

Publication Number Publication Date
FR2549289A1 FR2549289A1 (en) 1985-01-18
FR2549289B1 true FR2549289B1 (en) 1987-04-30

Family

ID=27057779

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8410694A Expired FR2549289B1 (en) 1983-07-12 1984-07-05 METHOD FOR APPLYING A DAM METAL TO THE SURFACE OF AN NPN TYPE SEMICONDUCTOR PELLET, AND NPN TYPE SEMICONDUCTOR DEVICE COMPRISING THIS METAL DAM

Country Status (4)

Country Link
AU (1) AU563246B2 (en)
DE (1) DE3425599A1 (en)
FR (1) FR2549289B1 (en)
GB (1) GB2143372B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL82113A (en) * 1987-04-05 1992-08-18 Zvi Orbach Fabrication of customized integrated circuits
US5055423A (en) * 1987-12-28 1991-10-08 Texas Instruments Incorporated Planarized selective tungsten metallization system
JPH0748502B2 (en) * 1988-05-13 1995-05-24 三菱電機株式会社 Method for manufacturing semiconductor device
GB9105943D0 (en) * 1991-03-20 1991-05-08 Philips Nv A method of manufacturing a semiconductor device
JP3118785B2 (en) * 1991-05-23 2000-12-18 ソニー株式会社 Method of forming barrier metal structure
US5364817A (en) * 1994-05-05 1994-11-15 United Microelectronics Corporation Tungsten-plug process

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946426A (en) * 1973-03-14 1976-03-23 Harris Corporation Interconnect system for integrated circuits
FR2372511A1 (en) * 1976-11-25 1978-06-23 Comp Generale Electricite Emitters and base contacts formed on planar semiconductors - with only a short distance between emitter and base

Also Published As

Publication number Publication date
GB8415370D0 (en) 1984-07-18
GB2143372B (en) 1987-07-01
GB2143372A (en) 1985-02-06
DE3425599A1 (en) 1985-04-25
AU563246B2 (en) 1987-07-02
AU2979484A (en) 1985-01-17
FR2549289A1 (en) 1985-01-18

Similar Documents

Publication Publication Date Title
FR2432766B1 (en) HIGH RELIABILITY SEMICONDUCTOR DEVICE INCLUDING IN PARTICULAR A HIGH PERFORMANCE PASSIVATION LAYER
BE895435A (en) DEVICE FOR EXPANDING PELLET MATERIAL
FR2483127B1 (en) METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
FR2524709B1 (en) SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION THEREOF
DE3272410D1 (en) Method of producing mosfet type semiconductor device
FR2332615A1 (en) METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
FR2351501A1 (en) METHOD FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURED FROM THE KIND
FR2537341B1 (en) METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCED ACCORDING TO THIS METHOD
FR2555858B1 (en) DEVICE FOR FORMING PLANT BALLS
IT8321460A0 (en) HIGH REPETITION SPEED TRANSIENT RECORDER WITH AUTOMATIC INTEGRATION.
FR2512241B1 (en) HIGH RELIABILITY ELECTRO-OPTICAL DEVICE AND MANUFACTURING METHOD THEREOF
FR2517122B1 (en) SEMICONDUCTOR DEVICE, ESPECIALLY MICROWAVE DIODE AND MANUFACTURING METHOD THEREOF
DE3280280D1 (en) DATA PROCESSING DEVICE FOR PROCESSING AT HIGH SPEEDS.
BE821565A (en) METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
FR2549289B1 (en) METHOD FOR APPLYING A DAM METAL TO THE SURFACE OF AN NPN TYPE SEMICONDUCTOR PELLET, AND NPN TYPE SEMICONDUCTOR DEVICE COMPRISING THIS METAL DAM
FR2575601B1 (en) METHOD AND DEVICE FOR DETERMINING ELECTRICAL PARAMETERS OF A SEMICONDUCTOR LAYER AS A FUNCTION OF THE DEPTH
RO68523A (en) METHOD AND DEVICE FOR COOLING A SEMICONDUCTOR
FR2493603B1 (en) SEMICONDUCTOR DEVICE
FR2530866B1 (en) NOVEL SEMICONDUCTOR DEVICE AND METHOD FOR ITS PREPARATION
FR2484703B1 (en) PROCESS FOR MAKING A PN JUNCTION ON A GROUP II-VI SEMICONDUCTOR
JPS57145326A (en) Method and device for forming pattern on wafer by photosensing semiconductor wafer
BE895420A (en) TEMPERATURE DETECTION DEVICE FOR TURBINES
KR860004468A (en) High speed semiconductor device
BE817319A (en) METHOD AND DEVICE FOR DECALAMINATION OF A METAL WIRE
MA20423A1 (en) SEMICONDUCTOR DEVICE.

Legal Events

Date Code Title Description
ST Notification of lapse