FR2549289B1 - METHOD FOR APPLYING A DAM METAL TO THE SURFACE OF AN NPN TYPE SEMICONDUCTOR PELLET, AND NPN TYPE SEMICONDUCTOR DEVICE COMPRISING THIS METAL DAM - Google Patents
METHOD FOR APPLYING A DAM METAL TO THE SURFACE OF AN NPN TYPE SEMICONDUCTOR PELLET, AND NPN TYPE SEMICONDUCTOR DEVICE COMPRISING THIS METAL DAMInfo
- Publication number
- FR2549289B1 FR2549289B1 FR8410694A FR8410694A FR2549289B1 FR 2549289 B1 FR2549289 B1 FR 2549289B1 FR 8410694 A FR8410694 A FR 8410694A FR 8410694 A FR8410694 A FR 8410694A FR 2549289 B1 FR2549289 B1 FR 2549289B1
- Authority
- FR
- France
- Prior art keywords
- type semiconductor
- dam
- metal
- npn type
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51320683A | 1983-07-12 | 1983-07-12 | |
US06/513,208 US4486946A (en) | 1983-07-12 | 1983-07-12 | Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2549289A1 FR2549289A1 (en) | 1985-01-18 |
FR2549289B1 true FR2549289B1 (en) | 1987-04-30 |
Family
ID=27057779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8410694A Expired FR2549289B1 (en) | 1983-07-12 | 1984-07-05 | METHOD FOR APPLYING A DAM METAL TO THE SURFACE OF AN NPN TYPE SEMICONDUCTOR PELLET, AND NPN TYPE SEMICONDUCTOR DEVICE COMPRISING THIS METAL DAM |
Country Status (4)
Country | Link |
---|---|
AU (1) | AU563246B2 (en) |
DE (1) | DE3425599A1 (en) |
FR (1) | FR2549289B1 (en) |
GB (1) | GB2143372B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL82113A (en) * | 1987-04-05 | 1992-08-18 | Zvi Orbach | Fabrication of customized integrated circuits |
US5055423A (en) * | 1987-12-28 | 1991-10-08 | Texas Instruments Incorporated | Planarized selective tungsten metallization system |
JPH0748502B2 (en) * | 1988-05-13 | 1995-05-24 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
GB9105943D0 (en) * | 1991-03-20 | 1991-05-08 | Philips Nv | A method of manufacturing a semiconductor device |
JP3118785B2 (en) * | 1991-05-23 | 2000-12-18 | ソニー株式会社 | Method of forming barrier metal structure |
US5364817A (en) * | 1994-05-05 | 1994-11-15 | United Microelectronics Corporation | Tungsten-plug process |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3946426A (en) * | 1973-03-14 | 1976-03-23 | Harris Corporation | Interconnect system for integrated circuits |
FR2372511A1 (en) * | 1976-11-25 | 1978-06-23 | Comp Generale Electricite | Emitters and base contacts formed on planar semiconductors - with only a short distance between emitter and base |
-
1984
- 1984-06-15 GB GB8415370A patent/GB2143372B/en not_active Expired
- 1984-06-22 AU AU29794/84A patent/AU563246B2/en not_active Ceased
- 1984-07-05 FR FR8410694A patent/FR2549289B1/en not_active Expired
- 1984-07-11 DE DE19843425599 patent/DE3425599A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB8415370D0 (en) | 1984-07-18 |
GB2143372B (en) | 1987-07-01 |
GB2143372A (en) | 1985-02-06 |
DE3425599A1 (en) | 1985-04-25 |
AU563246B2 (en) | 1987-07-02 |
AU2979484A (en) | 1985-01-17 |
FR2549289A1 (en) | 1985-01-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2432766B1 (en) | HIGH RELIABILITY SEMICONDUCTOR DEVICE INCLUDING IN PARTICULAR A HIGH PERFORMANCE PASSIVATION LAYER | |
BE895435A (en) | DEVICE FOR EXPANDING PELLET MATERIAL | |
FR2483127B1 (en) | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE | |
FR2524709B1 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION THEREOF | |
DE3272410D1 (en) | Method of producing mosfet type semiconductor device | |
FR2332615A1 (en) | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | |
FR2351501A1 (en) | METHOD FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURED FROM THE KIND | |
FR2537341B1 (en) | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCED ACCORDING TO THIS METHOD | |
FR2555858B1 (en) | DEVICE FOR FORMING PLANT BALLS | |
IT8321460A0 (en) | HIGH REPETITION SPEED TRANSIENT RECORDER WITH AUTOMATIC INTEGRATION. | |
FR2512241B1 (en) | HIGH RELIABILITY ELECTRO-OPTICAL DEVICE AND MANUFACTURING METHOD THEREOF | |
FR2517122B1 (en) | SEMICONDUCTOR DEVICE, ESPECIALLY MICROWAVE DIODE AND MANUFACTURING METHOD THEREOF | |
DE3280280D1 (en) | DATA PROCESSING DEVICE FOR PROCESSING AT HIGH SPEEDS. | |
BE821565A (en) | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | |
FR2549289B1 (en) | METHOD FOR APPLYING A DAM METAL TO THE SURFACE OF AN NPN TYPE SEMICONDUCTOR PELLET, AND NPN TYPE SEMICONDUCTOR DEVICE COMPRISING THIS METAL DAM | |
FR2575601B1 (en) | METHOD AND DEVICE FOR DETERMINING ELECTRICAL PARAMETERS OF A SEMICONDUCTOR LAYER AS A FUNCTION OF THE DEPTH | |
RO68523A (en) | METHOD AND DEVICE FOR COOLING A SEMICONDUCTOR | |
FR2493603B1 (en) | SEMICONDUCTOR DEVICE | |
FR2530866B1 (en) | NOVEL SEMICONDUCTOR DEVICE AND METHOD FOR ITS PREPARATION | |
FR2484703B1 (en) | PROCESS FOR MAKING A PN JUNCTION ON A GROUP II-VI SEMICONDUCTOR | |
JPS57145326A (en) | Method and device for forming pattern on wafer by photosensing semiconductor wafer | |
BE895420A (en) | TEMPERATURE DETECTION DEVICE FOR TURBINES | |
KR860004468A (en) | High speed semiconductor device | |
BE817319A (en) | METHOD AND DEVICE FOR DECALAMINATION OF A METAL WIRE | |
MA20423A1 (en) | SEMICONDUCTOR DEVICE. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |