GB2491209B - Solar cell and method for producing same - Google Patents

Solar cell and method for producing same

Info

Publication number
GB2491209B
GB2491209B GB1111302.4A GB201111302A GB2491209B GB 2491209 B GB2491209 B GB 2491209B GB 201111302 A GB201111302 A GB 201111302A GB 2491209 B GB2491209 B GB 2491209B
Authority
GB
United Kingdom
Prior art keywords
solar cell
producing same
producing
same
solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1111302.4A
Other languages
English (en)
Other versions
GB2491209A (en
GB201111302D0 (en
Inventor
Martin Kirkengen
Erik Sauar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renewable Energy Corp ASA
Original Assignee
Renewable Energy Corp ASA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renewable Energy Corp ASA filed Critical Renewable Energy Corp ASA
Priority to GB1111302.4A priority Critical patent/GB2491209B/en
Publication of GB201111302D0 publication Critical patent/GB201111302D0/en
Priority to PCT/EP2012/002274 priority patent/WO2012163517A2/en
Priority to US14/122,625 priority patent/US9748418B2/en
Priority to TW101118797A priority patent/TWI555220B/zh
Priority to KR1020137033483A priority patent/KR101914323B1/ko
Priority to JP2014511779A priority patent/JP6086905B2/ja
Priority to CN201280027134.1A priority patent/CN103765600B/zh
Priority to EP12724576.9A priority patent/EP2715794B1/de
Publication of GB2491209A publication Critical patent/GB2491209A/en
Application granted granted Critical
Publication of GB2491209B publication Critical patent/GB2491209B/en
Priority to US15/608,310 priority patent/US10461208B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/074Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells
GB1111302.4A 2011-05-27 2011-05-27 Solar cell and method for producing same Active GB2491209B (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GB1111302.4A GB2491209B (en) 2011-05-27 2011-05-27 Solar cell and method for producing same
CN201280027134.1A CN103765600B (zh) 2011-05-27 2012-05-25 太阳能电池及其生产方法
US14/122,625 US9748418B2 (en) 2011-05-27 2012-05-25 Solar cell and method for producing same
TW101118797A TWI555220B (zh) 2011-05-27 2012-05-25 太陽能電池及其製造方法
KR1020137033483A KR101914323B1 (ko) 2011-05-27 2012-05-25 태양전지 및 그의 제조방법
JP2014511779A JP6086905B2 (ja) 2011-05-27 2012-05-25 太陽電池およびその製作方法
PCT/EP2012/002274 WO2012163517A2 (en) 2011-05-27 2012-05-25 Solar cell and method for producing same
EP12724576.9A EP2715794B1 (de) 2011-05-27 2012-05-25 Solarzelle und herstellungsverfahren dafür
US15/608,310 US10461208B2 (en) 2011-05-27 2017-05-30 Solar cell and method for producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1111302.4A GB2491209B (en) 2011-05-27 2011-05-27 Solar cell and method for producing same

Publications (3)

Publication Number Publication Date
GB201111302D0 GB201111302D0 (en) 2011-08-17
GB2491209A GB2491209A (en) 2012-11-28
GB2491209B true GB2491209B (en) 2013-08-21

Family

ID=44511995

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1111302.4A Active GB2491209B (en) 2011-05-27 2011-05-27 Solar cell and method for producing same

Country Status (8)

Country Link
US (2) US9748418B2 (de)
EP (1) EP2715794B1 (de)
JP (1) JP6086905B2 (de)
KR (1) KR101914323B1 (de)
CN (1) CN103765600B (de)
GB (1) GB2491209B (de)
TW (1) TWI555220B (de)
WO (1) WO2012163517A2 (de)

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GB2491209B (en) * 2011-05-27 2013-08-21 Renewable Energy Corp Asa Solar cell and method for producing same
KR101613843B1 (ko) * 2013-04-23 2016-04-20 엘지전자 주식회사 태양 전지 및 이의 제조 방법
DE102013219565A1 (de) * 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Solarzelle und Verfahren zum Herstellen einer photovoltaischen Solarzelle
US9196758B2 (en) * 2013-12-20 2015-11-24 Sunpower Corporation Solar cell emitter region fabrication with differentiated p-type and n-type region architectures
KR102140068B1 (ko) * 2014-01-13 2020-07-31 엘지전자 주식회사 태양 전지의 제조 방법
WO2015115360A1 (ja) * 2014-01-29 2015-08-06 パナソニックIpマネジメント株式会社 太陽電池
KR101867855B1 (ko) * 2014-03-17 2018-06-15 엘지전자 주식회사 태양 전지
JP7182758B2 (ja) * 2014-05-12 2022-12-05 アンプリウス テクノロジーズ インコーポレイテッド リチウムバッテリのためのアノードおよびその製造方法
KR101569417B1 (ko) * 2014-07-07 2015-11-16 엘지전자 주식회사 태양 전지
KR101622091B1 (ko) 2014-08-20 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
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JP6697824B2 (ja) * 2015-01-14 2020-05-27 シャープ株式会社 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム
WO2017047375A1 (ja) * 2015-09-14 2017-03-23 シャープ株式会社 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム
US9502601B1 (en) * 2016-04-01 2016-11-22 Sunpower Corporation Metallization of solar cells with differentiated P-type and N-type region architectures
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KR102600449B1 (ko) * 2016-12-22 2023-11-10 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이의 제조 방법
TWI610455B (zh) * 2016-12-30 2018-01-01 異質接面薄本質層太陽能電池的製造方法
US11012027B2 (en) 2017-11-09 2021-05-18 Nex-Gen Solar Technologies, LLC Systems and methods for conversion of solar energy to electric power
TWI667797B (zh) * 2017-12-12 2019-08-01 友達光電股份有限公司 太陽能電池
JP7361045B2 (ja) 2018-11-21 2023-10-13 株式会社カネカ 太陽電池の製造方法
CN113284961B (zh) * 2021-07-22 2021-09-28 浙江爱旭太阳能科技有限公司 一种太阳能电池及其钝化接触结构、电池组件及光伏系统
CN113921658A (zh) * 2021-10-20 2022-01-11 晶澳(扬州)太阳能科技有限公司 一种太阳能电池的制备方法及太阳能电池
CN114823934A (zh) * 2022-04-15 2022-07-29 深圳市科纳能薄膜科技有限公司 背接触异质结太阳能电池及其制备方法
CN115207134B (zh) * 2022-07-01 2024-01-26 中国华能集团清洁能源技术研究院有限公司 背接触异质结电池片、光伏组件及其制作方法
CN117577697B (zh) * 2024-01-16 2024-05-03 金阳(泉州)新能源科技有限公司 具有特定正面钝化结构的背接触电池及其制备方法和应用

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