GB2491209B - Solar cell and method for producing same - Google Patents
Solar cell and method for producing sameInfo
- Publication number
- GB2491209B GB2491209B GB1111302.4A GB201111302A GB2491209B GB 2491209 B GB2491209 B GB 2491209B GB 201111302 A GB201111302 A GB 201111302A GB 2491209 B GB2491209 B GB 2491209B
- Authority
- GB
- United Kingdom
- Prior art keywords
- solar cell
- producing same
- producing
- same
- solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1111302.4A GB2491209B (en) | 2011-05-27 | 2011-05-27 | Solar cell and method for producing same |
CN201280027134.1A CN103765600B (zh) | 2011-05-27 | 2012-05-25 | 太阳能电池及其生产方法 |
US14/122,625 US9748418B2 (en) | 2011-05-27 | 2012-05-25 | Solar cell and method for producing same |
TW101118797A TWI555220B (zh) | 2011-05-27 | 2012-05-25 | 太陽能電池及其製造方法 |
KR1020137033483A KR101914323B1 (ko) | 2011-05-27 | 2012-05-25 | 태양전지 및 그의 제조방법 |
JP2014511779A JP6086905B2 (ja) | 2011-05-27 | 2012-05-25 | 太陽電池およびその製作方法 |
PCT/EP2012/002274 WO2012163517A2 (en) | 2011-05-27 | 2012-05-25 | Solar cell and method for producing same |
EP12724576.9A EP2715794B1 (de) | 2011-05-27 | 2012-05-25 | Solarzelle und herstellungsverfahren dafür |
US15/608,310 US10461208B2 (en) | 2011-05-27 | 2017-05-30 | Solar cell and method for producing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1111302.4A GB2491209B (en) | 2011-05-27 | 2011-05-27 | Solar cell and method for producing same |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201111302D0 GB201111302D0 (en) | 2011-08-17 |
GB2491209A GB2491209A (en) | 2012-11-28 |
GB2491209B true GB2491209B (en) | 2013-08-21 |
Family
ID=44511995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1111302.4A Active GB2491209B (en) | 2011-05-27 | 2011-05-27 | Solar cell and method for producing same |
Country Status (8)
Country | Link |
---|---|
US (2) | US9748418B2 (de) |
EP (1) | EP2715794B1 (de) |
JP (1) | JP6086905B2 (de) |
KR (1) | KR101914323B1 (de) |
CN (1) | CN103765600B (de) |
GB (1) | GB2491209B (de) |
TW (1) | TWI555220B (de) |
WO (1) | WO2012163517A2 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2491209B (en) * | 2011-05-27 | 2013-08-21 | Renewable Energy Corp Asa | Solar cell and method for producing same |
KR101613843B1 (ko) * | 2013-04-23 | 2016-04-20 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
DE102013219565A1 (de) * | 2013-09-27 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische Solarzelle und Verfahren zum Herstellen einer photovoltaischen Solarzelle |
US9196758B2 (en) * | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
KR102140068B1 (ko) * | 2014-01-13 | 2020-07-31 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
WO2015115360A1 (ja) * | 2014-01-29 | 2015-08-06 | パナソニックIpマネジメント株式会社 | 太陽電池 |
KR101867855B1 (ko) * | 2014-03-17 | 2018-06-15 | 엘지전자 주식회사 | 태양 전지 |
JP7182758B2 (ja) * | 2014-05-12 | 2022-12-05 | アンプリウス テクノロジーズ インコーポレイテッド | リチウムバッテリのためのアノードおよびその製造方法 |
KR101569417B1 (ko) * | 2014-07-07 | 2015-11-16 | 엘지전자 주식회사 | 태양 전지 |
KR101622091B1 (ko) | 2014-08-20 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
NL2013722B1 (en) | 2014-10-31 | 2016-10-04 | Univ Delft Tech | Back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon and/or silicon oxide regions. |
KR20160084261A (ko) * | 2015-01-05 | 2016-07-13 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
JP6697824B2 (ja) * | 2015-01-14 | 2020-05-27 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
WO2017047375A1 (ja) * | 2015-09-14 | 2017-03-23 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
US9502601B1 (en) * | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
DE102016106563A1 (de) * | 2016-04-11 | 2017-10-12 | Meyer Burger (Germany) Ag | Verfahren zum Herstellen einer Solarzelle, mit dem Verfahren hergestellte Solarzelle und Substratträger |
KR102600449B1 (ko) * | 2016-12-22 | 2023-11-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이의 제조 방법 |
TWI610455B (zh) * | 2016-12-30 | 2018-01-01 | 異質接面薄本質層太陽能電池的製造方法 | |
US11012027B2 (en) | 2017-11-09 | 2021-05-18 | Nex-Gen Solar Technologies, LLC | Systems and methods for conversion of solar energy to electric power |
TWI667797B (zh) * | 2017-12-12 | 2019-08-01 | 友達光電股份有限公司 | 太陽能電池 |
JP7361045B2 (ja) | 2018-11-21 | 2023-10-13 | 株式会社カネカ | 太陽電池の製造方法 |
CN113284961B (zh) * | 2021-07-22 | 2021-09-28 | 浙江爱旭太阳能科技有限公司 | 一种太阳能电池及其钝化接触结构、电池组件及光伏系统 |
CN113921658A (zh) * | 2021-10-20 | 2022-01-11 | 晶澳(扬州)太阳能科技有限公司 | 一种太阳能电池的制备方法及太阳能电池 |
CN114823934A (zh) * | 2022-04-15 | 2022-07-29 | 深圳市科纳能薄膜科技有限公司 | 背接触异质结太阳能电池及其制备方法 |
CN115207134B (zh) * | 2022-07-01 | 2024-01-26 | 中国华能集团清洁能源技术研究院有限公司 | 背接触异质结电池片、光伏组件及其制作方法 |
CN117577697B (zh) * | 2024-01-16 | 2024-05-03 | 金阳(泉州)新能源科技有限公司 | 具有特定正面钝化结构的背接触电池及其制备方法和应用 |
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US20170317224A1 (en) | 2017-11-02 |
GB2491209A (en) | 2012-11-28 |
CN103765600A (zh) | 2014-04-30 |
EP2715794B1 (de) | 2015-09-09 |
WO2012163517A3 (en) | 2013-03-14 |
KR20140042815A (ko) | 2014-04-07 |
US10461208B2 (en) | 2019-10-29 |
TW201310687A (zh) | 2013-03-01 |
TWI555220B (zh) | 2016-10-21 |
JP6086905B2 (ja) | 2017-03-01 |
KR101914323B1 (ko) | 2018-11-01 |
WO2012163517A2 (en) | 2012-12-06 |
GB201111302D0 (en) | 2011-08-17 |
JP2014515556A (ja) | 2014-06-30 |
US9748418B2 (en) | 2017-08-29 |
CN103765600B (zh) | 2017-03-01 |
EP2715794A2 (de) | 2014-04-09 |
US20140096819A1 (en) | 2014-04-10 |
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