EP2530729A4 - Solarzelle und herstellungsverfahren dafür - Google Patents
Solarzelle und herstellungsverfahren dafürInfo
- Publication number
- EP2530729A4 EP2530729A4 EP11737042.9A EP11737042A EP2530729A4 EP 2530729 A4 EP2530729 A4 EP 2530729A4 EP 11737042 A EP11737042 A EP 11737042A EP 2530729 A4 EP2530729 A4 EP 2530729A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- solar cell
- producing same
- producing
- same
- solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010014597 | 2010-01-26 | ||
PCT/JP2011/051479 WO2011093329A1 (ja) | 2010-01-26 | 2011-01-26 | 太陽電池及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2530729A1 EP2530729A1 (de) | 2012-12-05 |
EP2530729A4 true EP2530729A4 (de) | 2014-10-29 |
EP2530729B1 EP2530729B1 (de) | 2019-10-16 |
Family
ID=44319315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11737042.9A Active EP2530729B1 (de) | 2010-01-26 | 2011-01-26 | Solarzelle und herstellungsverfahren dafür |
Country Status (5)
Country | Link |
---|---|
US (1) | US10181540B2 (de) |
EP (1) | EP2530729B1 (de) |
JP (1) | JP5845445B2 (de) |
CN (1) | CN102725858B (de) |
WO (1) | WO2011093329A1 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5485060B2 (ja) | 2010-07-28 | 2014-05-07 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5334926B2 (ja) * | 2010-08-02 | 2013-11-06 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5705968B2 (ja) * | 2011-03-25 | 2015-04-22 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
WO2012132835A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 太陽電池 |
KR101826912B1 (ko) * | 2011-11-07 | 2018-02-08 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 광전변환소자 및 그 제조 방법 |
KR101878397B1 (ko) * | 2011-11-18 | 2018-07-16 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 태양전지 및 그 제조 방법 |
US20130146136A1 (en) * | 2011-12-13 | 2013-06-13 | Kyoung-Jin Seo | Photovoltaic device and method of manufacturing the same |
FR2985608B1 (fr) * | 2012-01-05 | 2016-11-18 | Commissariat Energie Atomique | Cellule photovoltaique et procede de realisation |
JP5777795B2 (ja) * | 2012-02-24 | 2015-09-09 | 三菱電機株式会社 | 光起電力素子 |
KR101948206B1 (ko) * | 2012-03-02 | 2019-02-14 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 태양 전지와, 이의 제조 방법 |
JP6032911B2 (ja) * | 2012-03-23 | 2016-11-30 | シャープ株式会社 | 光電変換素子およびその製造方法 |
KR101918738B1 (ko) | 2012-04-17 | 2018-11-15 | 엘지전자 주식회사 | 태양 전지 |
JP6071293B2 (ja) * | 2012-07-18 | 2017-02-01 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
JP2014056875A (ja) * | 2012-09-11 | 2014-03-27 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
KR101777881B1 (ko) | 2012-09-18 | 2017-09-12 | 현대중공업그린에너지 주식회사 | 후면전극형 태양전지 제조 방법 |
JP2014067804A (ja) * | 2012-09-25 | 2014-04-17 | Sharp Corp | 光電変換素子 |
CN102856328B (zh) * | 2012-10-10 | 2015-06-10 | 友达光电股份有限公司 | 太阳能电池及其制作方法 |
JP2014078618A (ja) * | 2012-10-11 | 2014-05-01 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
DE112013005224B4 (de) * | 2012-10-31 | 2019-05-23 | Panasonic Intellectual Property Management Co., Ltd. | Solarzelle |
US9806210B2 (en) | 2013-03-04 | 2017-10-31 | Sharp Kabushiki Kaisha | Photoelectric conversion element |
NL2010496C2 (en) * | 2013-03-21 | 2014-09-24 | Stichting Energie | Solar cell and method for manufacturing such a solar cell. |
JP6284522B2 (ja) * | 2013-03-28 | 2018-02-28 | シャープ株式会社 | 光電変換素子、光電変換モジュールおよび太陽光発電システム |
EP3048648B1 (de) * | 2013-09-19 | 2019-04-17 | Panasonic Intellectual Property Management Co., Ltd. | Solarzelle und solarzellenmodul |
TWI462320B (zh) * | 2013-11-11 | 2014-11-21 | Neo Solar Power Corp | 背接觸式太陽能電池 |
WO2015079779A1 (ja) * | 2013-11-29 | 2015-06-04 | パナソニックIpマネジメント株式会社 | 太陽電池の製造方法 |
US9196758B2 (en) * | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
WO2015114903A1 (ja) * | 2014-01-28 | 2015-08-06 | パナソニックIpマネジメント株式会社 | 太陽電池及びその製造方法 |
WO2015118740A1 (ja) * | 2014-02-06 | 2015-08-13 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP2015191962A (ja) * | 2014-03-27 | 2015-11-02 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
US20160284917A1 (en) * | 2015-03-27 | 2016-09-29 | Seung Bum Rim | Passivation Layer for Solar Cells |
US11355657B2 (en) * | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
US9525083B2 (en) * | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
WO2016158226A1 (ja) * | 2015-03-31 | 2016-10-06 | 株式会社カネカ | 太陽電池及びその製造方法 |
WO2017038733A1 (ja) * | 2015-08-31 | 2017-03-09 | シャープ株式会社 | 光電変換素子 |
US9502601B1 (en) * | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
EP3664153A4 (de) * | 2017-09-13 | 2020-09-23 | Kaneka Corporation | Solarzelle, herstellungsverfahren für die solarzelle und solarzellenmodul |
EP3664156A4 (de) * | 2017-12-04 | 2020-12-09 | Kaneka Corporation | Solarzelle und mit besagter solarzelle ausgestattete elektronische vorrichtung |
JP7278831B2 (ja) * | 2019-03-27 | 2023-05-22 | パナソニックホールディングス株式会社 | 太陽電池セルの製造方法および割断用太陽電池セル |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
US20050016585A1 (en) * | 2001-11-26 | 2005-01-27 | Adolf Munzer | Manufacturing a solar cell with backside contacts |
US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124483A (ja) * | 2001-10-17 | 2003-04-25 | Toyota Motor Corp | 光起電力素子 |
CN100431177C (zh) * | 2003-09-24 | 2008-11-05 | 三洋电机株式会社 | 光生伏打元件及其制造方法 |
JP3998619B2 (ja) * | 2003-09-24 | 2007-10-31 | 三洋電機株式会社 | 光起電力素子およびその製造方法 |
JP4155899B2 (ja) * | 2003-09-24 | 2008-09-24 | 三洋電機株式会社 | 光起電力素子の製造方法 |
DE102004050269A1 (de) | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
FR2880989B1 (fr) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
JP2007059644A (ja) * | 2005-08-25 | 2007-03-08 | Toyota Motor Corp | 光起電力素子 |
US20070169808A1 (en) * | 2006-01-26 | 2007-07-26 | Kherani Nazir P | Solar cell |
JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
US9070804B2 (en) * | 2009-02-24 | 2015-06-30 | Sunpower Corporation | Back contact sliver cells |
KR101146737B1 (ko) * | 2009-06-29 | 2012-05-18 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
US20110073175A1 (en) * | 2009-09-29 | 2011-03-31 | Twin Creeks Technologies, Inc. | Photovoltaic cell comprising a thin lamina having emitter formed at light-facing and back surfaces |
US8822809B2 (en) * | 2009-10-15 | 2014-09-02 | Lg Innotek Co., Ltd. | Solar cell apparatus and method for manufacturing the same |
-
2011
- 2011-01-26 WO PCT/JP2011/051479 patent/WO2011093329A1/ja active Application Filing
- 2011-01-26 JP JP2011551872A patent/JP5845445B2/ja not_active Expired - Fee Related
- 2011-01-26 EP EP11737042.9A patent/EP2530729B1/de active Active
- 2011-01-26 CN CN201180007219.9A patent/CN102725858B/zh not_active Expired - Fee Related
-
2012
- 2012-07-25 US US13/557,255 patent/US10181540B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
US20050016585A1 (en) * | 2001-11-26 | 2005-01-27 | Adolf Munzer | Manufacturing a solar cell with backside contacts |
US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
EP2239788A1 (de) * | 2008-01-30 | 2010-10-13 | Kyocera Corporation | Solarbatterieelement und verfahren zur herstellung eines solarbatterieelements |
Non-Patent Citations (3)
Title |
---|
ARAUJO G L ET AL: "BACK-CONTACTED EMITTER GAAS SOLAR CELLS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 56, no. 26, 25 June 1990 (1990-06-25), pages 2633 - 2635, XP000150029, ISSN: 0003-6951, DOI: 10.1063/1.102859 * |
See also references of WO2011093329A1 * |
SINTON R A ET AL: "SIMPLIFIED BACKSIDE-CONTACT SOLAR CELLS", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 37, no. 2, 1 February 1990 (1990-02-01), pages 348 - 352, XP000087949, ISSN: 0018-9383, DOI: 10.1109/16.46364 * |
Also Published As
Publication number | Publication date |
---|---|
EP2530729A1 (de) | 2012-12-05 |
CN102725858B (zh) | 2015-12-09 |
JPWO2011093329A1 (ja) | 2013-06-06 |
CN102725858A (zh) | 2012-10-10 |
EP2530729B1 (de) | 2019-10-16 |
US20130186456A1 (en) | 2013-07-25 |
US10181540B2 (en) | 2019-01-15 |
WO2011093329A1 (ja) | 2011-08-04 |
JP5845445B2 (ja) | 2016-01-20 |
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