GB201111302D0 - Solar cell and method for producing same - Google Patents
Solar cell and method for producing sameInfo
- Publication number
- GB201111302D0 GB201111302D0 GBGB1111302.4A GB201111302A GB201111302D0 GB 201111302 D0 GB201111302 D0 GB 201111302D0 GB 201111302 A GB201111302 A GB 201111302A GB 201111302 D0 GB201111302 D0 GB 201111302D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- solar cell
- producing same
- producing
- same
- solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1111302.4A GB2491209B (en) | 2011-05-27 | 2011-05-27 | Solar cell and method for producing same |
TW101118797A TWI555220B (en) | 2011-05-27 | 2012-05-25 | Solar cell and method for producing same |
CN201280027134.1A CN103765600B (en) | 2011-05-27 | 2012-05-25 | Solaode and its production method |
KR1020137033483A KR101914323B1 (en) | 2011-05-27 | 2012-05-25 | Solar cell and method for producing same |
US14/122,625 US9748418B2 (en) | 2011-05-27 | 2012-05-25 | Solar cell and method for producing same |
JP2014511779A JP6086905B2 (en) | 2011-05-27 | 2012-05-25 | Solar cell and manufacturing method thereof |
PCT/EP2012/002274 WO2012163517A2 (en) | 2011-05-27 | 2012-05-25 | Solar cell and method for producing same |
EP12724576.9A EP2715794B1 (en) | 2011-05-27 | 2012-05-25 | Solar cell and method for producing same |
US15/608,310 US10461208B2 (en) | 2011-05-27 | 2017-05-30 | Solar cell and method for producing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1111302.4A GB2491209B (en) | 2011-05-27 | 2011-05-27 | Solar cell and method for producing same |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201111302D0 true GB201111302D0 (en) | 2011-08-17 |
GB2491209A GB2491209A (en) | 2012-11-28 |
GB2491209B GB2491209B (en) | 2013-08-21 |
Family
ID=44511995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1111302.4A Active GB2491209B (en) | 2011-05-27 | 2011-05-27 | Solar cell and method for producing same |
Country Status (8)
Country | Link |
---|---|
US (2) | US9748418B2 (en) |
EP (1) | EP2715794B1 (en) |
JP (1) | JP6086905B2 (en) |
KR (1) | KR101914323B1 (en) |
CN (1) | CN103765600B (en) |
GB (1) | GB2491209B (en) |
TW (1) | TWI555220B (en) |
WO (1) | WO2012163517A2 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2491209B (en) * | 2011-05-27 | 2013-08-21 | Renewable Energy Corp Asa | Solar cell and method for producing same |
KR101613843B1 (en) * | 2013-04-23 | 2016-04-20 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
DE102013219565A1 (en) * | 2013-09-27 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaic solar cell and method for producing a photovoltaic solar cell |
US9196758B2 (en) * | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
KR102140068B1 (en) * | 2014-01-13 | 2020-07-31 | 엘지전자 주식회사 | Method for manufacturing solar cell |
DE112015000559T5 (en) * | 2014-01-29 | 2016-12-15 | Panasonic Intellectual Property Management Co., Ltd. | solar cell |
KR101867855B1 (en) * | 2014-03-17 | 2018-06-15 | 엘지전자 주식회사 | Solar cell |
WO2015175509A1 (en) * | 2014-05-12 | 2015-11-19 | Amprius, Inc. | Structurally controlled deposition of silicon onto nanowires |
KR101569417B1 (en) * | 2014-07-07 | 2015-11-16 | 엘지전자 주식회사 | Solar cell |
KR101622091B1 (en) * | 2014-08-20 | 2016-05-18 | 엘지전자 주식회사 | Solar cell and method for manufacuring the same |
NL2013722B1 (en) | 2014-10-31 | 2016-10-04 | Univ Delft Tech | Back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon and/or silicon oxide regions. |
KR20160084261A (en) * | 2015-01-05 | 2016-07-13 | 엘지전자 주식회사 | Solar cell and manufacturing method thereof |
JP6697824B2 (en) * | 2015-01-14 | 2020-05-27 | シャープ株式会社 | Photoelectric conversion element, solar cell module including the same, and photovoltaic power generation system |
WO2017047375A1 (en) * | 2015-09-14 | 2017-03-23 | シャープ株式会社 | Photoelectric conversion element, solar cell module provided with same, and photovoltaic power generation system |
US9502601B1 (en) * | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
DE102016106563A1 (en) * | 2016-04-11 | 2017-10-12 | Meyer Burger (Germany) Ag | Method for producing a solar cell, solar cell produced by the method and substrate carrier |
KR102600449B1 (en) * | 2016-12-22 | 2023-11-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | Solar cell and method for manufacturing the same |
TWI610455B (en) * | 2016-12-30 | 2018-01-01 | Method for manufacturing heterojunction thin intrinsic layer solar cell | |
US11012027B2 (en) | 2017-11-09 | 2021-05-18 | Nex-Gen Solar Technologies, LLC | Systems and methods for conversion of solar energy to electric power |
TWI667797B (en) * | 2017-12-12 | 2019-08-01 | 友達光電股份有限公司 | Solar cell |
JP7361045B2 (en) | 2018-11-21 | 2023-10-13 | 株式会社カネカ | How to manufacture solar cells |
CN113284961B (en) * | 2021-07-22 | 2021-09-28 | 浙江爱旭太阳能科技有限公司 | Solar cell and passivation contact structure thereof, cell module and photovoltaic system |
CN113921658A (en) * | 2021-10-20 | 2022-01-11 | 晶澳(扬州)太阳能科技有限公司 | Preparation method of solar cell and solar cell |
CN114823934A (en) * | 2022-04-15 | 2022-07-29 | 深圳市科纳能薄膜科技有限公司 | Back contact heterojunction solar cell and preparation method thereof |
CN115207134B (en) * | 2022-07-01 | 2024-01-26 | 中国华能集团清洁能源技术研究院有限公司 | Back contact heterojunction battery piece, photovoltaic module and manufacturing method of back contact heterojunction battery piece |
CN117577697A (en) * | 2024-01-16 | 2024-02-20 | 金阳(泉州)新能源科技有限公司 | Back contact battery with specific front passivation structure and preparation method and application thereof |
Family Cites Families (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4427839A (en) * | 1981-11-09 | 1984-01-24 | General Electric Company | Faceted low absorptance solar cell |
US4511600A (en) * | 1984-02-10 | 1985-04-16 | Solarex Corporation | Solar cell metal spray process |
JP2744847B2 (en) * | 1991-06-11 | 1998-04-28 | エイエスイー・アメリカス・インコーポレーテッド | Improved solar cell and method for manufacturing the same |
US5641362A (en) * | 1995-11-22 | 1997-06-24 | Ebara Solar, Inc. | Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell |
JP3722326B2 (en) * | 1996-12-20 | 2005-11-30 | 三菱電機株式会社 | Manufacturing method of solar cell |
US6838819B2 (en) | 2000-06-19 | 2005-01-04 | Lg Electronics Inc. | Full color organic EL display panel, manufacturing method thereof and driving circuit thereof |
JP2003298078A (en) | 2002-03-29 | 2003-10-17 | Ebara Corp | Photoelectromotive element |
CN100431177C (en) * | 2003-09-24 | 2008-11-05 | 三洋电机株式会社 | Photovoltaic cell and method of fabricating the same |
JP4155899B2 (en) * | 2003-09-24 | 2008-09-24 | 三洋電機株式会社 | Photovoltaic element manufacturing method |
JP4511146B2 (en) | 2003-09-26 | 2010-07-28 | 三洋電機株式会社 | Photovoltaic element and manufacturing method thereof |
KR101073016B1 (en) * | 2004-12-13 | 2011-10-12 | 삼성에스디아이 주식회사 | Solar cell and fabrication method thereof |
FR2880989B1 (en) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND INTERDIGITAL STRUCTURE |
US8916768B2 (en) * | 2005-04-14 | 2014-12-23 | Rec Solar Pte. Ltd. | Surface passivation of silicon based wafers |
US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
US20070169808A1 (en) * | 2006-01-26 | 2007-07-26 | Kherani Nazir P | Solar cell |
NO20061668L (en) * | 2006-04-12 | 2007-10-15 | Renewable Energy Corp | Solar cell and process for making the same |
TWI487124B (en) * | 2006-08-25 | 2015-06-01 | Sanyo Electric Co | Solar battery module and solar battery module manufacturing method |
DE102006042617B4 (en) * | 2006-09-05 | 2010-04-08 | Q-Cells Se | Method for generating local contacts |
FR2906406B1 (en) * | 2006-09-26 | 2008-12-19 | Commissariat Energie Atomique | PROCESS FOR PRODUCING A PHOTOVOLTAIC CELL WITH REAR-SIDE HETEROJUNCTION |
GB2442254A (en) * | 2006-09-29 | 2008-04-02 | Renewable Energy Corp Asa | Back contacted solar cell |
FR2914501B1 (en) | 2007-03-28 | 2009-12-04 | Commissariat Energie Atomique | PHOTOVOLTAIC DEVICE WITH DISCONTINUOUS INTERDIGITED HETEROJUNCTION STRUCTURE |
US20090050190A1 (en) * | 2007-08-24 | 2009-02-26 | Sanyo Electric Co., Ltd. | Solar cell and solar cell module |
DE102007059486A1 (en) * | 2007-12-11 | 2009-06-18 | Institut Für Solarenergieforschung Gmbh | Rear contact solar cell with elongated, interleaved emitter and base regions at the back and manufacturing method thereof |
US8481845B2 (en) * | 2008-02-05 | 2013-07-09 | Gtat Corporation | Method to form a photovoltaic cell comprising a thin lamina |
US8481357B2 (en) * | 2008-03-08 | 2013-07-09 | Crystal Solar Incorporated | Thin film solar cell with ceramic handling layer |
GB2458961A (en) * | 2008-04-04 | 2009-10-07 | Rec Solar As | Flexible interconnectors comprising conductive fabric between solar cells |
US20090293948A1 (en) | 2008-05-28 | 2009-12-03 | Stichting Energieonderzoek Centrum Nederland | Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell |
JP5207852B2 (en) * | 2008-06-30 | 2013-06-12 | 三洋電機株式会社 | Solar cell and manufacturing method thereof |
JP5496479B2 (en) * | 2008-07-25 | 2014-05-21 | 三洋電機株式会社 | Manufacturing method of solar cell |
US20100051085A1 (en) * | 2008-08-27 | 2010-03-04 | Weidman Timothy W | Back contact solar cell modules |
WO2010025262A2 (en) * | 2008-08-27 | 2010-03-04 | Applied Materials, Inc. | Back contact solar cells using printed dielectric barrier |
JP5347409B2 (en) | 2008-09-29 | 2013-11-20 | 三洋電機株式会社 | Solar cell and manufacturing method thereof |
JP5261110B2 (en) | 2008-09-29 | 2013-08-14 | 三洋電機株式会社 | Solar cell manufacturing method and solar cell |
US20100108134A1 (en) * | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin two sided single crystal solar cell and manufacturing process thereof |
CN201364905Y (en) * | 2008-11-06 | 2009-12-16 | 李涛勇 | Back-leading silicon solar cell with heterogeneous structure |
EP2200082A1 (en) * | 2008-12-19 | 2010-06-23 | STMicroelectronics Srl | Modular interdigitated back contact photovoltaic cell structure on opaque substrate and fabrication process |
KR101099480B1 (en) * | 2009-02-13 | 2011-12-27 | 엘지전자 주식회사 | Solar Cell, Method for Manufacturing thereof and Etching Method for Substrate |
JP5306112B2 (en) * | 2009-02-17 | 2013-10-02 | 三洋電機株式会社 | Solar cell and solar cell module |
US8288645B2 (en) * | 2009-03-17 | 2012-10-16 | Sharp Laboratories Of America, Inc. | Single heterojunction back contact solar cell |
US20120211063A1 (en) * | 2009-03-17 | 2012-08-23 | Jong-Jan Lee | Back Contact Solar Cell with Organic Semiconductor Heterojunctions |
AU2010229103A1 (en) * | 2009-03-26 | 2011-11-03 | Bp Corporation North America Inc. | Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions |
JP2010258043A (en) * | 2009-04-21 | 2010-11-11 | Sanyo Electric Co Ltd | Solar cell |
KR101159276B1 (en) * | 2009-05-29 | 2012-06-22 | 주식회사 효성 | Back junction solar cells and method for manufacturing thereof |
DE102009024807B3 (en) * | 2009-06-02 | 2010-10-07 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Solar cell has photo-active, semiconducting absorber layer, where alternating adjacent arrangement of electrically insulating passivation areas on back of absorber layer with thickness |
US7927910B2 (en) | 2009-06-28 | 2011-04-19 | Sino-American Silicon Products Inc. | Manufacturing method of solar cell |
JP5384224B2 (en) * | 2009-06-29 | 2014-01-08 | 三洋電機株式会社 | Solar cell |
JP5642370B2 (en) * | 2009-09-29 | 2014-12-17 | 三洋電機株式会社 | Solar cell module |
JP5535709B2 (en) * | 2010-03-19 | 2014-07-02 | 三洋電機株式会社 | SOLAR CELL, SOLAR CELL MODULE USING THE SOLAR CELL, AND SOLAR CELL MANUFACTURING METHOD |
KR20130038847A (en) * | 2010-03-23 | 2013-04-18 | 가부시키가이샤 아사히 러버 | Silicone resin reflective substrate, manufacturing method for same, and base material composition used in reflective substrate |
JP5879538B2 (en) * | 2011-03-25 | 2016-03-08 | パナソニックIpマネジメント株式会社 | Photoelectric conversion device and manufacturing method thereof |
US9435052B2 (en) * | 2011-04-19 | 2016-09-06 | Rec Solar Pte. Ltd. | Arrangement for manufacturing crystalline silicon ingots |
GB2491209B (en) * | 2011-05-27 | 2013-08-21 | Renewable Energy Corp Asa | Solar cell and method for producing same |
US9054256B2 (en) * | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
US20140360567A1 (en) * | 2011-08-05 | 2014-12-11 | Solexel, Inc. | Back contact solar cells using aluminum-based alloy metallization |
EP2791978A2 (en) * | 2011-12-13 | 2014-10-22 | Dow Corning Corporation | Photovoltaic cell and method of forming the same |
GB2499192A (en) * | 2012-02-02 | 2013-08-14 | Rec Cells Pte Ltd | Method for producing a solar cell with a selective emitter |
GB2503515A (en) | 2012-06-29 | 2014-01-01 | Rec Cells Pte Ltd | A rear contact heterojunction solar cell |
NL2009382C2 (en) * | 2012-08-29 | 2014-03-18 | M4Si B V | Method for manufacturing a solar cell and solar cell obtained therewith. |
GB2508792A (en) * | 2012-09-11 | 2014-06-18 | Rec Modules Pte Ltd | Back contact solar cell cell interconnection arrangements |
KR101627204B1 (en) * | 2013-11-28 | 2016-06-03 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
US20150236175A1 (en) * | 2013-12-02 | 2015-08-20 | Solexel, Inc. | Amorphous silicon passivated contacts for back contact back junction solar cells |
US9716192B2 (en) * | 2014-03-28 | 2017-07-25 | International Business Machines Corporation | Method for fabricating a photovoltaic device by uniform plating on emitter-lined through-wafer vias and interconnects |
EP3016148A1 (en) * | 2014-10-28 | 2016-05-04 | Sol Voltaics AB | Dual layer photovoltaic device |
US10217876B2 (en) * | 2015-09-25 | 2019-02-26 | Heraeus Precious Metals North America Conshohocken Llc | Poly-siloxane containing organic vehicle for electroconductive pastes |
-
2011
- 2011-05-27 GB GB1111302.4A patent/GB2491209B/en active Active
-
2012
- 2012-05-25 EP EP12724576.9A patent/EP2715794B1/en active Active
- 2012-05-25 WO PCT/EP2012/002274 patent/WO2012163517A2/en active Application Filing
- 2012-05-25 TW TW101118797A patent/TWI555220B/en active
- 2012-05-25 CN CN201280027134.1A patent/CN103765600B/en active Active
- 2012-05-25 JP JP2014511779A patent/JP6086905B2/en active Active
- 2012-05-25 KR KR1020137033483A patent/KR101914323B1/en active IP Right Grant
- 2012-05-25 US US14/122,625 patent/US9748418B2/en active Active
-
2017
- 2017-05-30 US US15/608,310 patent/US10461208B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2014515556A (en) | 2014-06-30 |
CN103765600B (en) | 2017-03-01 |
EP2715794B1 (en) | 2015-09-09 |
JP6086905B2 (en) | 2017-03-01 |
KR20140042815A (en) | 2014-04-07 |
GB2491209A (en) | 2012-11-28 |
GB2491209B (en) | 2013-08-21 |
TWI555220B (en) | 2016-10-21 |
US20170317224A1 (en) | 2017-11-02 |
US9748418B2 (en) | 2017-08-29 |
KR101914323B1 (en) | 2018-11-01 |
US10461208B2 (en) | 2019-10-29 |
TW201310687A (en) | 2013-03-01 |
CN103765600A (en) | 2014-04-30 |
EP2715794A2 (en) | 2014-04-09 |
WO2012163517A2 (en) | 2012-12-06 |
WO2012163517A3 (en) | 2013-03-14 |
US20140096819A1 (en) | 2014-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2491209B (en) | Solar cell and method for producing same | |
EP2530729A4 (en) | Solar cell and method for producing same | |
EP2717325A4 (en) | Solar cell and method for manufacturing same | |
MY156847A (en) | Solar cell and method of manufacture thereof, and solar cell module | |
EP2752888A4 (en) | Method for producing solar cell module and solar cell module | |
EP2937910A4 (en) | Solar cell and method for producing same | |
EP2827382A4 (en) | Solar cell and method for manufacturing same | |
HK1201375A1 (en) | Method for manufacturing dye-sensitized solar cells and solar cells so produced | |
EP2747152A4 (en) | Solar cell and method for manufacturing same | |
EP2851986A4 (en) | Fuel cell and method for producing same | |
EP2439788A4 (en) | Solar cell apparatus and method for manufacturing same | |
HK1197077A1 (en) | Solar module and method for producing same | |
EP2738816A4 (en) | Solar cell, solar cell module, and method for producing solar cell | |
EP2691989A4 (en) | Method for manufacturing solar cell | |
EP2784827A4 (en) | Thin-film solar cell module, and method for producing same | |
EP2715796A4 (en) | Solar cell apparatus and method of fabricating the same | |
EP2535946A4 (en) | Solar cell module and production method for solar cell module | |
EP2720277A4 (en) | Solar cell module and method for manufacturing same | |
IL237607A0 (en) | Photovoltaic solar cell and method for producing a photovoltaic solar cell | |
EP2763186A4 (en) | Solar cell and method for manufacturing same | |
EP2789017A4 (en) | Solar cell and method for preparing the same | |
EP2695200A4 (en) | Solar cell and manufacturing method thereof | |
EP2784828A4 (en) | Czts thin-film solar cell, and method for producing same | |
EP2691988A4 (en) | Solar cell and method for manufacturing the same | |
EP2752889A4 (en) | Method for producing solar cell module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20140109 AND 20140115 |
|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20140424 AND 20140430 |