GB2381124B - Structure and fabrication method for capacitors integratible with vertical replacement gate transistors - Google Patents

Structure and fabrication method for capacitors integratible with vertical replacement gate transistors

Info

Publication number
GB2381124B
GB2381124B GB0214017A GB0214017A GB2381124B GB 2381124 B GB2381124 B GB 2381124B GB 0214017 A GB0214017 A GB 0214017A GB 0214017 A GB0214017 A GB 0214017A GB 2381124 B GB2381124 B GB 2381124B
Authority
GB
United Kingdom
Prior art keywords
integratible
capacitors
fabrication method
gate transistors
replacement gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0214017A
Other languages
English (en)
Other versions
GB2381124A (en
GB0214017D0 (en
Inventor
Samir Chaudhry
Paul Arthur Layman
John Russell Mcmacken
Ross Thomson
Jack Qingsheng Zhao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Guardian Corp filed Critical Agere Systems Guardian Corp
Publication of GB0214017D0 publication Critical patent/GB0214017D0/en
Publication of GB2381124A publication Critical patent/GB2381124A/en
Application granted granted Critical
Publication of GB2381124B publication Critical patent/GB2381124B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB0214017A 2001-09-18 2002-06-18 Structure and fabrication method for capacitors integratible with vertical replacement gate transistors Expired - Fee Related GB2381124B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/956,381 US20030052365A1 (en) 2001-09-18 2001-09-18 Structure and fabrication method for capacitors integratible with vertical replacement gate transistors

Publications (3)

Publication Number Publication Date
GB0214017D0 GB0214017D0 (en) 2002-07-31
GB2381124A GB2381124A (en) 2003-04-23
GB2381124B true GB2381124B (en) 2005-04-20

Family

ID=25498164

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0214017A Expired - Fee Related GB2381124B (en) 2001-09-18 2002-06-18 Structure and fabrication method for capacitors integratible with vertical replacement gate transistors

Country Status (5)

Country Link
US (6) US20030052365A1 (enExample)
JP (2) JP2003163281A (enExample)
KR (1) KR100898265B1 (enExample)
GB (1) GB2381124B (enExample)
TW (1) TW560065B (enExample)

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WO2009110050A1 (ja) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 半導体装置の製造方法
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US8368136B2 (en) * 2008-07-03 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Integrating a capacitor in a metal gate last process
US8125051B2 (en) * 2008-07-03 2012-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Device layout for gate last process
US7936009B2 (en) * 2008-07-09 2011-05-03 Fairchild Semiconductor Corporation Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
US8237227B2 (en) 2008-08-29 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy gate structure for gate last process
JP5376916B2 (ja) * 2008-11-26 2013-12-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
TWI428844B (zh) 2009-07-10 2014-03-01 Univ Chung Hua 神經刺激及反應監控之裝置及其系統以及該裝置之製備方法
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US9882025B1 (en) 2016-09-30 2018-01-30 Globalfoundries Inc. Methods of simultaneously forming bottom and top spacers on a vertical transistor device
US10535652B2 (en) * 2016-10-27 2020-01-14 International Business Machines Corporation Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction
US9966456B1 (en) 2016-11-08 2018-05-08 Globalfoundries Inc. Methods of forming gate electrodes on a vertical transistor device
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US10229999B2 (en) 2017-02-28 2019-03-12 Globalfoundries Inc. Methods of forming upper source/drain regions on a vertical transistor device
US10014370B1 (en) 2017-04-19 2018-07-03 Globalfoundries Inc. Air gap adjacent a bottom source/drain region of vertical transistor device
US10177215B1 (en) 2017-10-25 2019-01-08 Texas Instruments Incorporated Analog capacitor on submicron pitch metal level
US10157915B1 (en) 2017-10-25 2018-12-18 Texas Instruments Incorporated Capacitor with improved voltage coefficients
US10600778B2 (en) 2017-11-16 2020-03-24 International Business Machines Corporation Method and apparatus of forming high voltage varactor and vertical transistor on a substrate
US11239342B2 (en) 2018-06-28 2022-02-01 International Business Machines Corporation Vertical transistors having improved control of top source or drain junctions
CN111326509B (zh) * 2020-03-03 2023-06-30 中国科学院微电子研究所 包括电容器的半导体装置及其制造方法及电子设备
KR20250160964A (ko) * 2023-03-17 2025-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치의 제작 방법
CN116646381A (zh) * 2023-07-27 2023-08-25 深圳市冠禹半导体有限公司 一种高效能的sgtmosfet器件及其制备方法

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Also Published As

Publication number Publication date
US7911006B2 (en) 2011-03-22
US7242056B2 (en) 2007-07-10
KR100898265B1 (ko) 2009-05-19
US20090130810A1 (en) 2009-05-21
US7491610B2 (en) 2009-02-17
JP5274490B2 (ja) 2013-08-28
US7633118B2 (en) 2009-12-15
US20070238243A1 (en) 2007-10-11
JP2010157742A (ja) 2010-07-15
JP2003163281A (ja) 2003-06-06
TW560065B (en) 2003-11-01
GB2381124A (en) 2003-04-23
US20070228440A1 (en) 2007-10-04
US20030052365A1 (en) 2003-03-20
US7700432B2 (en) 2010-04-20
US20100044767A1 (en) 2010-02-25
KR20030024566A (ko) 2003-03-26
GB0214017D0 (en) 2002-07-31
US20040188737A1 (en) 2004-09-30

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20150618