JP2003163281A - 垂直置換ゲートトランジスタと集積可能な容量の構造及び作製法 - Google Patents

垂直置換ゲートトランジスタと集積可能な容量の構造及び作製法

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Publication number
JP2003163281A
JP2003163281A JP2002269987A JP2002269987A JP2003163281A JP 2003163281 A JP2003163281 A JP 2003163281A JP 2002269987 A JP2002269987 A JP 2002269987A JP 2002269987 A JP2002269987 A JP 2002269987A JP 2003163281 A JP2003163281 A JP 2003163281A
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JP
Japan
Prior art keywords
layer
doped
region
silicon
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002269987A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003163281A5 (enExample
Inventor
Samir Chaudhry
チャウドハリー サミア
Paul Arthur Layman
アーサー レイマン ポール
John Russel Mcmacken
ルッセル マックマッケン ジョン
Ross Thomson
トムソン ロス
Jack Qingsheng Zhao
クイングスヘング ザオ ジャック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems LLC filed Critical Agere Systems LLC
Publication of JP2003163281A publication Critical patent/JP2003163281A/ja
Publication of JP2003163281A5 publication Critical patent/JP2003163281A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2002269987A 2001-09-18 2002-09-17 垂直置換ゲートトランジスタと集積可能な容量の構造及び作製法 Pending JP2003163281A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/956381 2001-09-18
US09/956,381 US20030052365A1 (en) 2001-09-18 2001-09-18 Structure and fabrication method for capacitors integratible with vertical replacement gate transistors

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010004696A Division JP5274490B2 (ja) 2001-09-18 2010-01-13 垂直置換ゲートトランジスタと集積可能な容量の構造及び作製法

Publications (2)

Publication Number Publication Date
JP2003163281A true JP2003163281A (ja) 2003-06-06
JP2003163281A5 JP2003163281A5 (enExample) 2005-11-04

Family

ID=25498164

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002269987A Pending JP2003163281A (ja) 2001-09-18 2002-09-17 垂直置換ゲートトランジスタと集積可能な容量の構造及び作製法
JP2010004696A Expired - Fee Related JP5274490B2 (ja) 2001-09-18 2010-01-13 垂直置換ゲートトランジスタと集積可能な容量の構造及び作製法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010004696A Expired - Fee Related JP5274490B2 (ja) 2001-09-18 2010-01-13 垂直置換ゲートトランジスタと集積可能な容量の構造及び作製法

Country Status (5)

Country Link
US (6) US20030052365A1 (enExample)
JP (2) JP2003163281A (enExample)
KR (1) KR100898265B1 (enExample)
GB (1) GB2381124B (enExample)
TW (1) TW560065B (enExample)

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JP2010129686A (ja) * 2008-11-26 2010-06-10 Renesas Electronics Corp 半導体装置とその製造方法
JP2015015491A (ja) * 2008-02-15 2015-01-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法

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US6773994B2 (en) * 2001-12-26 2004-08-10 Agere Systems Inc. CMOS vertical replacement gate (VRG) transistors
US7439595B2 (en) * 2004-11-30 2008-10-21 Matsushita Electric Industrial Co., Ltd. Field effect transistor having vertical channel structure
US7326611B2 (en) * 2005-02-03 2008-02-05 Micron Technology, Inc. DRAM arrays, vertical transistor structures and methods of forming transistor structures and DRAM arrays
JP2006310651A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 半導体装置の製造方法
JP5568305B2 (ja) 2006-09-29 2014-08-06 ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド 赤外線検出および表示のための方法および装置
JP2010016089A (ja) * 2008-07-02 2010-01-21 Nec Electronics Corp 電界効果トランジスタ、その製造方法、及び半導体装置
US8368136B2 (en) * 2008-07-03 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Integrating a capacitor in a metal gate last process
US8125051B2 (en) * 2008-07-03 2012-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Device layout for gate last process
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US8237227B2 (en) 2008-08-29 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy gate structure for gate last process
TWI428844B (zh) 2009-07-10 2014-03-01 Univ Chung Hua 神經刺激及反應監控之裝置及其系統以及該裝置之製備方法
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US8258031B2 (en) 2010-06-15 2012-09-04 International Business Machines Corporation Fabrication of a vertical heterojunction tunnel-FET
JP6219172B2 (ja) 2011-02-28 2017-10-25 ユニバーシティ オブ フロリダ リサーチ ファウンデーション, インク.University Of Florida Reseatch Foundation, Inc. ゲインを有する光検出器及びアップコンバージョン装置（ｅｃ）
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US9490252B1 (en) 2015-08-05 2016-11-08 International Business Machines Corporation MIM capacitor formation in RMG module
JP6538598B2 (ja) * 2016-03-16 2019-07-03 株式会社東芝 トランジスタ及び半導体記憶装置
US9530866B1 (en) 2016-04-13 2016-12-27 Globalfoundries Inc. Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts
US9799751B1 (en) 2016-04-19 2017-10-24 Globalfoundries Inc. Methods of forming a gate structure on a vertical transistor device
US9954109B2 (en) * 2016-05-05 2018-04-24 International Business Machines Corporation Vertical transistor including controlled gate length and a self-aligned junction
US9640636B1 (en) 2016-06-02 2017-05-02 Globalfoundries Inc. Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor device
US10347745B2 (en) 2016-09-19 2019-07-09 Globalfoundries Inc. Methods of forming bottom and top source/drain regions on a vertical transistor device
US10170616B2 (en) 2016-09-19 2019-01-01 Globalfoundries Inc. Methods of forming a vertical transistor device
US9882025B1 (en) 2016-09-30 2018-01-30 Globalfoundries Inc. Methods of simultaneously forming bottom and top spacers on a vertical transistor device
US10535652B2 (en) * 2016-10-27 2020-01-14 International Business Machines Corporation Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction
US9966456B1 (en) 2016-11-08 2018-05-08 Globalfoundries Inc. Methods of forming gate electrodes on a vertical transistor device
US9935018B1 (en) 2017-02-17 2018-04-03 Globalfoundries Inc. Methods of forming vertical transistor devices with different effective gate lengths
US10229999B2 (en) 2017-02-28 2019-03-12 Globalfoundries Inc. Methods of forming upper source/drain regions on a vertical transistor device
US10014370B1 (en) 2017-04-19 2018-07-03 Globalfoundries Inc. Air gap adjacent a bottom source/drain region of vertical transistor device
US10177215B1 (en) 2017-10-25 2019-01-08 Texas Instruments Incorporated Analog capacitor on submicron pitch metal level
US10157915B1 (en) 2017-10-25 2018-12-18 Texas Instruments Incorporated Capacitor with improved voltage coefficients
US10600778B2 (en) 2017-11-16 2020-03-24 International Business Machines Corporation Method and apparatus of forming high voltage varactor and vertical transistor on a substrate
US11239342B2 (en) 2018-06-28 2022-02-01 International Business Machines Corporation Vertical transistors having improved control of top source or drain junctions
CN111326509B (zh) * 2020-03-03 2023-06-30 中国科学院微电子研究所 包括电容器的半导体装置及其制造方法及电子设备
KR20250160964A (ko) * 2023-03-17 2025-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치의 제작 방법
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JP2015015491A (ja) * 2008-02-15 2015-01-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法
JP2010129686A (ja) * 2008-11-26 2010-06-10 Renesas Electronics Corp 半導体装置とその製造方法

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US7911006B2 (en) 2011-03-22
US7242056B2 (en) 2007-07-10
KR100898265B1 (ko) 2009-05-19
US20090130810A1 (en) 2009-05-21
US7491610B2 (en) 2009-02-17
JP5274490B2 (ja) 2013-08-28
US7633118B2 (en) 2009-12-15
US20070238243A1 (en) 2007-10-11
JP2010157742A (ja) 2010-07-15
TW560065B (en) 2003-11-01
GB2381124A (en) 2003-04-23
US20070228440A1 (en) 2007-10-04
US20030052365A1 (en) 2003-03-20
US7700432B2 (en) 2010-04-20
US20100044767A1 (en) 2010-02-25
KR20030024566A (ko) 2003-03-26
GB2381124B (en) 2005-04-20
GB0214017D0 (en) 2002-07-31
US20040188737A1 (en) 2004-09-30

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