GB2016801A - Reference voltage generating device - Google Patents

Reference voltage generating device

Info

Publication number
GB2016801A
GB2016801A GB7907817A GB7907817A GB2016801A GB 2016801 A GB2016801 A GB 2016801A GB 7907817 A GB7907817 A GB 7907817A GB 7907817 A GB7907817 A GB 7907817A GB 2016801 A GB2016801 A GB 2016801A
Authority
GB
United Kingdom
Prior art keywords
reference voltage
igfets
difference
energy levels
voltage generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7907817A
Other versions
GB2016801B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2544478A external-priority patent/JPS54119653A/en
Priority claimed from JP3554578A external-priority patent/JPS54129348A/en
Priority claimed from JP3924278A external-priority patent/JPS54132753A/en
Priority claimed from JP11171878A external-priority patent/JPS5539606A/en
Priority claimed from JP11171778A external-priority patent/JPS5539605A/en
Priority claimed from JP11172578A external-priority patent/JPS5539413A/en
Priority claimed from JP11172078A external-priority patent/JPS5539608A/en
Priority claimed from JP11172378A external-priority patent/JPS5538677A/en
Priority claimed from JP11171978A external-priority patent/JPS5539607A/en
Priority claimed from JP11172278A external-priority patent/JPS5539411A/en
Priority claimed from JP11172478A external-priority patent/JPS5539412A/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB2016801A publication Critical patent/GB2016801A/en
Application granted granted Critical
Publication of GB2016801B publication Critical patent/GB2016801B/en
Priority to SG41684A priority Critical patent/SG41684G/en
Priority to SG41584A priority patent/SG41584G/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H03F3/45748—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using a feedback circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018514—Interface arrangements with at least one differential stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0231—Astable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0233—Bistable circuits
    • H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Control Of Electrical Variables (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

A reference voltage generating device comprises two insulated gate field effect transistors (IGFETs) T1, T2, whose gates are doped differently so that their Fermi energy levels are different. This causes the IGFETs to have different threshold voltages, the difference of which is proportional to the difference in Fermi energy levels. By subtracting the drain voltages V1, V2 of the two IGFETs the difference of the threshold voltages can be obtained. This creates a stable reference voltage since the Fermi energy levels do not vary greatly with temperature. A variety of methods of manufacturing the semiconductor are disclosed, depending on the nature of the IGFET to be formed. The reference voltage generating circuit is applicable to many electronic devices, such as operational amplifiers. voltage comparators. Schmitt trigger circuits battery checkers and other devices are also described. <IMAGE>
GB7907817A 1978-03-08 1979-03-06 Referenc voltage generating device Expired GB2016801B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SG41684A SG41684G (en) 1978-03-08 1984-06-04 Improvements in the manufacture of a semiconductor device
SG41584A SG41584G (en) 1978-03-08 1984-06-04 Reference voltage generating device

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2544478A JPS54119653A (en) 1978-03-08 1978-03-08 Constant voltage generating circuit
JP3554578A JPS54129348A (en) 1978-03-29 1978-03-29 Constant voltage output circuit
JP3924278A JPS54132753A (en) 1978-04-05 1978-04-05 Referential voltage generator and its application
JP11172278A JPS5539411A (en) 1978-09-13 1978-09-13 Reference voltage generator
JP11172478A JPS5539412A (en) 1978-09-13 1978-09-13 Insulating gate field effect transistor integrated circuit and its manufacture
JP11171978A JPS5539607A (en) 1978-09-13 1978-09-13 Reference voltage generation device
JP11171878A JPS5539606A (en) 1978-09-13 1978-09-13 Reference voltage generation device
JP11171778A JPS5539605A (en) 1978-09-13 1978-09-13 Reference voltage generation device
JP11172378A JPS5538677A (en) 1978-09-13 1978-09-13 Semiconductor memory with function of detecting power failure
JP11172078A JPS5539608A (en) 1978-09-13 1978-09-13 Reference voltage generation device
JP11172578A JPS5539413A (en) 1978-09-13 1978-09-13 Schmitt trigger circuit

Publications (2)

Publication Number Publication Date
GB2016801A true GB2016801A (en) 1979-09-26
GB2016801B GB2016801B (en) 1983-02-02

Family

ID=27581900

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7907817A Expired GB2016801B (en) 1978-03-08 1979-03-06 Referenc voltage generating device

Country Status (10)

Country Link
CA (1) CA1149081A (en)
CH (2) CH657712A5 (en)
DE (2) DE2906527A1 (en)
FR (1) FR2447036B1 (en)
GB (1) GB2016801B (en)
HK (4) HK8084A (en)
IT (1) IT1111987B (en)
MY (4) MY8400375A (en)
NL (1) NL7901335A (en)
SG (1) SG41784G (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2494519A1 (en) * 1980-11-14 1982-05-21 Efcis INTEGRATED CURRENT GENERATOR IN CMOS TECHNOLOGY
EP0053653A1 (en) * 1980-12-04 1982-06-16 Rockwell International Corporation A voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques
EP0097338A2 (en) * 1982-06-18 1984-01-04 Hitachi, Ltd. Reference voltage generating device
EP0102618A2 (en) * 1982-08-31 1984-03-14 Nec Corporation Memory circuit with power supply voltage detection means
EP0183185A2 (en) * 1984-11-22 1986-06-04 CSELT Centro Studi e Laboratori Telecomunicazioni S.p.A. Differential reference voltage generator for NMOS single-supply integrated circuits
EP0332548A1 (en) * 1988-03-09 1989-09-13 STMicroelectronics S.A. Stabilized generator for the delivery of a threshold voltage for a MOS transistor
EP0565806A1 (en) * 1992-04-16 1993-10-20 STMicroelectronics S.r.l. Accurate MOS threshold voltage generator
EP0661751A1 (en) * 1993-04-29 1995-07-05 Texas Instruments Incorporated CMOS device with high and low voltage transistors
GB2298724A (en) * 1991-11-15 1996-09-11 Nec Corp Constant voltage circuit
EP1102319A1 (en) * 1999-11-19 2001-05-23 STMicroelectronics S.r.l. Process for manufacturing electronic devices comprising high voltage mos transistors, and electronic device thus obtained
EP2553684A1 (en) * 2010-03-30 2013-02-06 Silicon Storage Technology Inc. Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
CN110707151A (en) * 2019-11-13 2020-01-17 江苏丽隽功率半导体有限公司 Electrostatic induction thyristor and manufacturing method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2103427A1 (en) * 1970-08-21 1972-04-14 Motorola Inc
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
DE2050320A1 (en) * 1970-10-13 1972-04-20 Siemens Ag Semiconductor device
JPS4952980A (en) * 1972-09-22 1974-05-23
US3995177A (en) * 1973-01-02 1976-11-30 Fairchild Camera And Instrument Corporation Electronic watch
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2494519A1 (en) * 1980-11-14 1982-05-21 Efcis INTEGRATED CURRENT GENERATOR IN CMOS TECHNOLOGY
EP0052553A1 (en) * 1980-11-14 1982-05-26 Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux - E.F.C.I.S. Integrated current-source generator in CMOS technology
US4442398A (en) * 1980-11-14 1984-04-10 Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux-E.F.C.I.S. Integrated circuit generator in CMOS technology
EP0053653A1 (en) * 1980-12-04 1982-06-16 Rockwell International Corporation A voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques
EP0097338A2 (en) * 1982-06-18 1984-01-04 Hitachi, Ltd. Reference voltage generating device
EP0097338A3 (en) * 1982-06-18 1984-10-24 Hitachi, Ltd. Reference voltage generating device
EP0102618A2 (en) * 1982-08-31 1984-03-14 Nec Corporation Memory circuit with power supply voltage detection means
EP0102618A3 (en) * 1982-08-31 1987-07-29 Nec Corporation Memory circuit with power supply voltage detection means
EP0183185A2 (en) * 1984-11-22 1986-06-04 CSELT Centro Studi e Laboratori Telecomunicazioni S.p.A. Differential reference voltage generator for NMOS single-supply integrated circuits
EP0183185A3 (en) * 1984-11-22 1986-12-30 Cselt Centro Studi E Laboratori Telecomunicazioni S.P.A. Differential reference voltage generator for nmos single-supply integrated circuits
US4954728A (en) * 1988-03-09 1990-09-04 Sgs-Thomson Microelectronics S.A. Stabilized generator for supplying a threshold voltage to a MOS transistor
EP0332548A1 (en) * 1988-03-09 1989-09-13 STMicroelectronics S.A. Stabilized generator for the delivery of a threshold voltage for a MOS transistor
FR2628547A1 (en) * 1988-03-09 1989-09-15 Sgs Thomson Microelectronics STABILIZED GENERATOR FOR PROVIDING MOS TRANSISTOR THRESHOLD
GB2298724B (en) * 1991-11-15 1996-12-11 Nec Corp Constant voltage circuit
GB2298724A (en) * 1991-11-15 1996-09-11 Nec Corp Constant voltage circuit
EP0565806A1 (en) * 1992-04-16 1993-10-20 STMicroelectronics S.r.l. Accurate MOS threshold voltage generator
US5495166A (en) * 1992-04-16 1996-02-27 Sgs-Thomson Microelectronics S.R.L. MOS transistor threshold voltage generator
EP0661751A1 (en) * 1993-04-29 1995-07-05 Texas Instruments Incorporated CMOS device with high and low voltage transistors
EP1102319A1 (en) * 1999-11-19 2001-05-23 STMicroelectronics S.r.l. Process for manufacturing electronic devices comprising high voltage mos transistors, and electronic device thus obtained
US6501147B1 (en) 1999-11-19 2002-12-31 Stmicroelectronics S.R.L. Process for manufacturing electronic devices comprising high voltage MOS transistors, and electronic device thus obtained
EP2553684A1 (en) * 2010-03-30 2013-02-06 Silicon Storage Technology Inc. Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
EP2553684A4 (en) * 2010-03-30 2013-11-20 Silicon Storage Tech Inc Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
US8693274B2 (en) 2010-03-30 2014-04-08 Silicon Storage Technology, Inc. Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
EP2966648A1 (en) * 2010-03-30 2016-01-13 Silicon Storage Technology Inc. Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
US9548087B2 (en) 2010-03-30 2017-01-17 Silicon Storage Technology, Inc. Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
CN110707151A (en) * 2019-11-13 2020-01-17 江苏丽隽功率半导体有限公司 Electrostatic induction thyristor and manufacturing method thereof

Also Published As

Publication number Publication date
CH672391B5 (en) 1990-05-31
HK36385A (en) 1985-05-17
FR2447036A1 (en) 1980-08-14
GB2016801B (en) 1983-02-02
DE2906527A1 (en) 1979-10-18
FR2447036B1 (en) 1986-10-17
MY8500672A (en) 1985-12-31
CH657712A5 (en) 1986-09-15
MY8500671A (en) 1985-12-31
MY8400375A (en) 1984-12-31
DE2954543C2 (en) 1990-04-12
IT7920368A0 (en) 1979-02-20
IT1111987B (en) 1986-01-13
MY8500658A (en) 1985-12-31
SG41784G (en) 1985-03-08
CA1149081A (en) 1983-06-28
HK36485A (en) 1985-05-17
HK35185A (en) 1985-05-17
HK8084A (en) 1984-02-01
NL7901335A (en) 1979-09-11
CH672391GA3 (en) 1989-11-30

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940306