JPS5539606A - Reference voltage generation device - Google Patents

Reference voltage generation device

Info

Publication number
JPS5539606A
JPS5539606A JP11171878A JP11171878A JPS5539606A JP S5539606 A JPS5539606 A JP S5539606A JP 11171878 A JP11171878 A JP 11171878A JP 11171878 A JP11171878 A JP 11171878A JP S5539606 A JPS5539606 A JP S5539606A
Authority
JP
Japan
Prior art keywords
difference
reference voltage
intrinsic
polycrystal
voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11171878A
Other languages
Japanese (ja)
Inventor
Satoshi Meguro
Koichi Nagasawa
Osamu Yamashiro
Kanji Yo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11171878A priority Critical patent/JPS5539606A/en
Priority to CH1621/79A priority patent/CH657712A5/en
Priority to NL7901335A priority patent/NL7901335A/en
Priority to DE19792906527 priority patent/DE2906527A1/en
Priority to CA000321955A priority patent/CA1149081A/en
Priority to FR7904226A priority patent/FR2447036B1/en
Priority to IT20368/79A priority patent/IT1111987B/en
Priority to DE2954543A priority patent/DE2954543C2/de
Priority to GB8119559A priority patent/GB2081014B/en
Priority to GB7907817A priority patent/GB2016801B/en
Priority to GB8119560A priority patent/GB2081015B/en
Priority to GB8119562A priority patent/GB2081458B/en
Priority to GB8119561A priority patent/GB2100540B/en
Publication of JPS5539606A publication Critical patent/JPS5539606A/en
Priority to CA000395812A priority patent/CA1146223A/en
Priority to CA000395810A priority patent/CA1154880A/en
Priority to CA000395813A priority patent/CA1143010A/en
Priority to CA000395811A priority patent/CA1145063A/en
Priority to HK80/84A priority patent/HK8084A/en
Priority to SG41584A priority patent/SG41584G/en
Priority to SG417/84A priority patent/SG41784G/en
Priority to SG41684A priority patent/SG41684G/en
Priority to MY1984375A priority patent/MY8400375A/en
Priority to CH1928/85A priority patent/CH672391B5/en
Priority to HK364/85A priority patent/HK36485A/en
Priority to HK363/85A priority patent/HK36385A/en
Priority to HK351/85A priority patent/HK35185A/en
Priority to MY672/85A priority patent/MY8500672A/en
Priority to MY671/85A priority patent/MY8500671A/en
Priority to MY658/85A priority patent/MY8500658A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0233—Bistable circuits
    • H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain reference voltage with few variations and no need of adjustment after manufacturing by taking out the voltage equal to the difference between Fermi levels of Al and P-type or intrinsic Si as the reference voltage. CONSTITUTION:Difference in Fermi levels of 1.15eV between P<+>Si and Al and of 0.60eV between intrinsic Si and Al are little dependent on temperature and suitable for a reference voltage generation device. Intrinsic polycrystal Si 4 is stacked on a gate oxidation film of N-type Si 1 and a SiO2 mask 6 is provided. After making openings selectively, a P-layer 8 and a P-type polycrystal Si film 7 are formed. With coating of PSG 9 and openings made selectively thereupon, heat treatment is effected with the provision of Al electrodes 11 and 12 to alloy Al with polycrystal Si in holes 10. At this stage, thershold voltages for IGFETA-C are given by -0.8V, -1.4V and -1.95V respectively and these values are almost equal to the difference in Ferimi levels of Al and Si at the central portion of the gate electrode. With this arrangement, after connecting drains and gates for FETT1, T2 in common, thus obtained device is operated with a constant-current supply I0 and then the difference in thershold voltages is taken out from the difference in drain voltages as the reference.
JP11171878A 1978-03-08 1978-09-13 Reference voltage generation device Pending JPS5539606A (en)

Priority Applications (29)

Application Number Priority Date Filing Date Title
JP11171878A JPS5539606A (en) 1978-09-13 1978-09-13 Reference voltage generation device
CH1621/79A CH657712A5 (en) 1978-03-08 1979-02-19 REFERENCE VOLTAGE GENERATOR.
NL7901335A NL7901335A (en) 1978-03-08 1979-02-20 GENERATOR FOR A REFERENCE VOLTAGE.
DE19792906527 DE2906527A1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR
CA000321955A CA1149081A (en) 1978-03-08 1979-02-20 Reference voltage generator device
FR7904226A FR2447036B1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR
IT20368/79A IT1111987B (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR DEVICE
DE2954543A DE2954543C2 (en) 1978-03-08 1979-02-20
GB8119559A GB2081014B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
GB7907817A GB2016801B (en) 1978-03-08 1979-03-06 Referenc voltage generating device
GB8119560A GB2081015B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
GB8119562A GB2081458B (en) 1978-03-08 1979-03-06 Voltage comparitors
GB8119561A GB2100540B (en) 1978-03-08 1979-03-06 Reference voltage generators
CA000395810A CA1154880A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395811A CA1145063A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395812A CA1146223A (en) 1978-03-08 1982-02-08 Battery checker
CA000395813A CA1143010A (en) 1978-03-08 1982-02-08 Reference voltage generator device
HK80/84A HK8084A (en) 1978-03-08 1984-01-24 A battery checker
SG41584A SG41584G (en) 1978-03-08 1984-06-04 Reference voltage generating device
SG417/84A SG41784G (en) 1978-03-08 1984-06-04 Reference voltage generating device
SG41684A SG41684G (en) 1978-03-08 1984-06-04 Improvements in the manufacture of a semiconductor device
MY1984375A MY8400375A (en) 1978-03-08 1984-12-31 A battery checker
CH1928/85A CH672391B5 (en) 1978-03-08 1985-02-19 REFERENCE VOLTAGE GENERATOR.
HK364/85A HK36485A (en) 1978-03-08 1985-05-09 Reference voltage generating device
HK351/85A HK35185A (en) 1978-03-08 1985-05-09 Reference voltage generating device
HK363/85A HK36385A (en) 1978-03-08 1985-05-09 Improvements in the manufacture of a semiconductor device
MY672/85A MY8500672A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY671/85A MY8500671A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY658/85A MY8500658A (en) 1978-03-08 1985-12-30 Reference voltage generating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11171878A JPS5539606A (en) 1978-09-13 1978-09-13 Reference voltage generation device

Publications (1)

Publication Number Publication Date
JPS5539606A true JPS5539606A (en) 1980-03-19

Family

ID=14568396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11171878A Pending JPS5539606A (en) 1978-03-08 1978-09-13 Reference voltage generation device

Country Status (1)

Country Link
JP (1) JPS5539606A (en)

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