JPS5539605A - Reference voltage generation device - Google Patents

Reference voltage generation device

Info

Publication number
JPS5539605A
JPS5539605A JP11171778A JP11171778A JPS5539605A JP S5539605 A JPS5539605 A JP S5539605A JP 11171778 A JP11171778 A JP 11171778A JP 11171778 A JP11171778 A JP 11171778A JP S5539605 A JPS5539605 A JP S5539605A
Authority
JP
Japan
Prior art keywords
type
difference
reference voltage
gate
fett1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11171778A
Other languages
Japanese (ja)
Other versions
JPS6341223B2 (en
Inventor
Satoshi Meguro
Osamu Yamashiro
Kanji Yo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11171778A priority Critical patent/JPS5539605A/en
Priority to IN118/CAL/79A priority patent/IN151981B/en
Priority to CH1621/79A priority patent/CH657712A5/en
Priority to FR7904226A priority patent/FR2447036B1/en
Priority to DE2954543A priority patent/DE2954543C2/de
Priority to DE19792906527 priority patent/DE2906527A1/en
Priority to CA000321955A priority patent/CA1149081A/en
Priority to NL7901335A priority patent/NL7901335A/en
Priority to IT20368/79A priority patent/IT1111987B/en
Priority to GB8119560A priority patent/GB2081015B/en
Priority to GB8119562A priority patent/GB2081458B/en
Priority to GB8119559A priority patent/GB2081014B/en
Priority to GB7907817A priority patent/GB2016801B/en
Priority to GB8119561A priority patent/GB2100540B/en
Publication of JPS5539605A publication Critical patent/JPS5539605A/en
Priority to CA000395813A priority patent/CA1143010A/en
Priority to CA000395812A priority patent/CA1146223A/en
Priority to CA000395810A priority patent/CA1154880A/en
Priority to CA000395811A priority patent/CA1145063A/en
Priority to US06/484,351 priority patent/US4559694A/en
Priority to HK80/84A priority patent/HK8084A/en
Priority to SG417/84A priority patent/SG41784G/en
Priority to SG41584A priority patent/SG41584G/en
Priority to SG41684A priority patent/SG41684G/en
Priority to MY1984375A priority patent/MY8400375A/en
Priority to CH1928/85A priority patent/CH672391B5/en
Priority to HK351/85A priority patent/HK35185A/en
Priority to HK363/85A priority patent/HK36385A/en
Priority to HK364/85A priority patent/HK36485A/en
Priority to MY671/85A priority patent/MY8500671A/en
Priority to MY672/85A priority patent/MY8500672A/en
Priority to MY658/85A priority patent/MY8500658A/en
Publication of JPS6341223B2 publication Critical patent/JPS6341223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0233—Bistable circuits
    • H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a reference voltage generation device with few variations and no need of adjustment by taking out the voltage based on the difference between the Fermi levels of N-type and P-type Si as the reference voltage. CONSTITUTION:After coating polycrystal Si 6 on a gate oxidation film 3 of N-type Si 1, an N-type polycrystal Si film 5 is made with the aid of a SiO2 mask 7. Removing the mask 7 and making openings selectively, a P-type diffusion layer 4 is formed with the adjustment of ion concentration. Then, with an insulation coating electrodes are provided to form an N<+> gate MOSA and P<+> gate MOSB. In this stage, the impurity atom concentration ratio of N-type to P-type at the time of diffusion should be over 1.5/1 in order to permit the variations in manufacturing. After connecting drains and sources of FETT1, T2 for N<+> and P+ gates in common, thus obtained device is operated with a constant-current supply I0. Since FETT1, T2 are different in their threshold values Vth and equal in mutual conductances, the difference in thereshold values therebetween can be obtained from the difference in drain voltage and this value equals to the difference between the Fermi levels of N-type and P-type semiconductors.
JP11171778A 1978-03-08 1978-09-13 Reference voltage generation device Granted JPS5539605A (en)

Priority Applications (31)

Application Number Priority Date Filing Date Title
JP11171778A JPS5539605A (en) 1978-09-13 1978-09-13 Reference voltage generation device
IN118/CAL/79A IN151981B (en) 1978-09-13 1979-02-08
CH1621/79A CH657712A5 (en) 1978-03-08 1979-02-19 REFERENCE VOLTAGE GENERATOR.
FR7904226A FR2447036B1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR
DE2954543A DE2954543C2 (en) 1978-03-08 1979-02-20
DE19792906527 DE2906527A1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR
CA000321955A CA1149081A (en) 1978-03-08 1979-02-20 Reference voltage generator device
NL7901335A NL7901335A (en) 1978-03-08 1979-02-20 GENERATOR FOR A REFERENCE VOLTAGE.
IT20368/79A IT1111987B (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR DEVICE
GB8119560A GB2081015B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
GB8119562A GB2081458B (en) 1978-03-08 1979-03-06 Voltage comparitors
GB8119559A GB2081014B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
GB7907817A GB2016801B (en) 1978-03-08 1979-03-06 Referenc voltage generating device
GB8119561A GB2100540B (en) 1978-03-08 1979-03-06 Reference voltage generators
CA000395812A CA1146223A (en) 1978-03-08 1982-02-08 Battery checker
CA000395813A CA1143010A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395811A CA1145063A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395810A CA1154880A (en) 1978-03-08 1982-02-08 Reference voltage generator device
US06/484,351 US4559694A (en) 1978-09-13 1983-04-12 Method of manufacturing a reference voltage generator device
HK80/84A HK8084A (en) 1978-03-08 1984-01-24 A battery checker
SG417/84A SG41784G (en) 1978-03-08 1984-06-04 Reference voltage generating device
SG41584A SG41584G (en) 1978-03-08 1984-06-04 Reference voltage generating device
SG41684A SG41684G (en) 1978-03-08 1984-06-04 Improvements in the manufacture of a semiconductor device
MY1984375A MY8400375A (en) 1978-03-08 1984-12-31 A battery checker
CH1928/85A CH672391B5 (en) 1978-03-08 1985-02-19 REFERENCE VOLTAGE GENERATOR.
HK364/85A HK36485A (en) 1978-03-08 1985-05-09 Reference voltage generating device
HK351/85A HK35185A (en) 1978-03-08 1985-05-09 Reference voltage generating device
HK363/85A HK36385A (en) 1978-03-08 1985-05-09 Improvements in the manufacture of a semiconductor device
MY671/85A MY8500671A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY672/85A MY8500672A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY658/85A MY8500658A (en) 1978-03-08 1985-12-30 Reference voltage generating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11171778A JPS5539605A (en) 1978-09-13 1978-09-13 Reference voltage generation device

Publications (2)

Publication Number Publication Date
JPS5539605A true JPS5539605A (en) 1980-03-19
JPS6341223B2 JPS6341223B2 (en) 1988-08-16

Family

ID=14568369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11171778A Granted JPS5539605A (en) 1978-03-08 1978-09-13 Reference voltage generation device

Country Status (1)

Country Link
JP (1) JPS5539605A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0443128U (en) * 1990-08-10 1992-04-13
JPH0714922U (en) * 1993-08-25 1995-03-14 日本針布株式会社 Hair straightening brush for animals

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50777A (en) * 1973-05-02 1975-01-07
JPS511397A (en) * 1974-05-24 1976-01-08 Deepsea Ventures Inc
JPS51149780A (en) * 1975-06-16 1976-12-22 Hewlett Packard Yokogawa Standard voltage generator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50777A (en) * 1973-05-02 1975-01-07
JPS511397A (en) * 1974-05-24 1976-01-08 Deepsea Ventures Inc
JPS51149780A (en) * 1975-06-16 1976-12-22 Hewlett Packard Yokogawa Standard voltage generator

Also Published As

Publication number Publication date
JPS6341223B2 (en) 1988-08-16

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