FR2447036A1 - REFERENCE VOLTAGE GENERATOR - Google Patents

REFERENCE VOLTAGE GENERATOR

Info

Publication number
FR2447036A1
FR2447036A1 FR7904226A FR7904226A FR2447036A1 FR 2447036 A1 FR2447036 A1 FR 2447036A1 FR 7904226 A FR7904226 A FR 7904226A FR 7904226 A FR7904226 A FR 7904226A FR 2447036 A1 FR2447036 A1 FR 2447036A1
Authority
FR
France
Prior art keywords
semiconductor
voltage
reference voltage
type
igfets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7904226A
Other languages
French (fr)
Other versions
FR2447036B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2544478A external-priority patent/JPS54119653A/en
Priority claimed from JP3554578A external-priority patent/JPS54129348A/en
Priority claimed from JP3924278A external-priority patent/JPS54132753A/en
Priority claimed from JP11172578A external-priority patent/JPS5539413A/en
Priority claimed from JP11172278A external-priority patent/JPS5539411A/en
Priority claimed from JP11172478A external-priority patent/JPS5539412A/en
Priority claimed from JP11171878A external-priority patent/JPS5539606A/en
Priority claimed from JP11171978A external-priority patent/JPS5539607A/en
Priority claimed from JP11172078A external-priority patent/JPS5539608A/en
Priority claimed from JP11171778A external-priority patent/JPS5539605A/en
Priority claimed from JP11172378A external-priority patent/JPS5538677A/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2447036A1 publication Critical patent/FR2447036A1/en
Publication of FR2447036B1 publication Critical patent/FR2447036B1/en
Application granted granted Critical
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H03F3/45748—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using a feedback circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018514—Interface arrangements with at least one differential stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0231—Astable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0233—Bistable circuits
    • H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier

Abstract

Dispositif générateur de tension de référence qui détecte une tension correspondant à un intervalle d'énergie d'un semi-conducteur, ou une tension d'une valeur proche, ou une tension basée sur un niveau d'énergie d'un semi-conducteur, et produit la tension détectée comme tension de référence. Cette tension de référence est produite en détectant une différence des tensions seuils de premier et second transistors à effet de champ du type à grille isolée (IGFET). Les grilles des premier et second IGFET sont formées sur des pellicules d'isolation de grille formées, quant à elles, sur des aires différentes de la surface d'un substrat semi-conducteur identique dans des conditions substantiellement pareilles. Les grilles des premier et second IGFET sont respectivement faites de leur semi-conducteurs choisis entre un semi-conducteur à conductibilité d'un premier type, un semi-conducteur à conductibilité d'un second type et un semi-conducteur intrinsèque fait d'une matière semiconductrice identique; et dont les niveaux Fermi d'énergie sont différents l'un de l'autre. Les canaux des premier et second IGFET ont une conductibilité de même type.Reference voltage generator device which detects a voltage corresponding to an energy interval of a semiconductor, or a voltage of a close value, or a voltage based on an energy level of a semiconductor, and produces the detected voltage as a reference voltage. This reference voltage is produced by detecting a difference in the threshold voltages of the first and second field effect transistors of the insulated gate type (IGFET). The gates of the first and second IGFETs are formed on gate insulation films formed, in turn, on different areas of the surface of an identical semiconductor substrate under substantially the same conditions. The gates of the first and second IGFETs are respectively made of their semiconductors chosen between a semiconductor with conductivity of a first type, a semiconductor with conductivity of a second type and an intrinsic semiconductor made of a identical semiconductor material; and whose Fermi energy levels are different from each other. The channels of the first and second IGFETs have a conductivity of the same type.

FR7904226A 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR Expired FR2447036B1 (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2544478A JPS54119653A (en) 1978-03-08 1978-03-08 Constant voltage generating circuit
JP3554578A JPS54129348A (en) 1978-03-29 1978-03-29 Constant voltage output circuit
JP3924278A JPS54132753A (en) 1978-04-05 1978-04-05 Referential voltage generator and its application
JP11172278A JPS5539411A (en) 1978-09-13 1978-09-13 Reference voltage generator
JP11172578A JPS5539413A (en) 1978-09-13 1978-09-13 Schmitt trigger circuit
JP11172478A JPS5539412A (en) 1978-09-13 1978-09-13 Insulating gate field effect transistor integrated circuit and its manufacture
JP11171878A JPS5539606A (en) 1978-09-13 1978-09-13 Reference voltage generation device
JP11171978A JPS5539607A (en) 1978-09-13 1978-09-13 Reference voltage generation device
JP11172078A JPS5539608A (en) 1978-09-13 1978-09-13 Reference voltage generation device
JP11171778A JPS5539605A (en) 1978-09-13 1978-09-13 Reference voltage generation device
JP11172378A JPS5538677A (en) 1978-09-13 1978-09-13 Semiconductor memory with function of detecting power failure

Publications (2)

Publication Number Publication Date
FR2447036A1 true FR2447036A1 (en) 1980-08-14
FR2447036B1 FR2447036B1 (en) 1986-10-17

Family

ID=27581900

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7904226A Expired FR2447036B1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR

Country Status (10)

Country Link
CA (1) CA1149081A (en)
CH (2) CH657712A5 (en)
DE (2) DE2906527A1 (en)
FR (1) FR2447036B1 (en)
GB (1) GB2016801B (en)
HK (4) HK8084A (en)
IT (1) IT1111987B (en)
MY (4) MY8400375A (en)
NL (1) NL7901335A (en)
SG (1) SG41784G (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2494519A1 (en) * 1980-11-14 1982-05-21 Efcis INTEGRATED CURRENT GENERATOR IN CMOS TECHNOLOGY
US4347476A (en) * 1980-12-04 1982-08-31 Rockwell International Corporation Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques
JPS58221418A (en) * 1982-06-18 1983-12-23 Hitachi Ltd Device for generating reference voltage
JPS5940393A (en) * 1982-08-31 1984-03-06 Nec Corp Memory circuit
IT1179823B (en) * 1984-11-22 1987-09-16 Cselt Centro Studi Lab Telecom DIFFERENTIAL REFERENCE VOLTAGE GENERATOR FOR SINGLE POWER INTEGRATED CIRCUITS IN NMOS TECHNOLOGY
FR2628547B1 (en) * 1988-03-09 1990-12-28 Sgs Thomson Microelectronics STABILIZED GENERATOR FOR PROVIDING MOS TRANSISTOR THRESHOLD
GB2298724B (en) * 1991-11-15 1996-12-11 Nec Corp Constant voltage circuit
EP0565806B1 (en) * 1992-04-16 1996-08-28 STMicroelectronics S.r.l. Accurate MOS threshold voltage generator
US5468666A (en) * 1993-04-29 1995-11-21 Texas Instruments Incorporated Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chip
EP1102319B1 (en) * 1999-11-19 2010-05-26 STMicroelectronics Srl Process for manufacturing electronic devices comprising high-voltage MOS and EEPROM transistors
US8385147B2 (en) * 2010-03-30 2013-02-26 Silicon Storage Technology, Inc. Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
CN110707151B (en) * 2019-11-13 2023-04-07 江苏丽隽功率半导体有限公司 Electrostatic induction thyristor and manufacturing method thereof

Citations (5)

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Publication number Priority date Publication date Assignee Title
FR2103427A1 (en) * 1970-08-21 1972-04-14 Motorola Inc
FR2110392A1 (en) * 1970-10-13 1972-06-02 Siemens Ag
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US3995177A (en) * 1973-01-02 1976-11-30 Fairchild Camera And Instrument Corporation Electronic watch
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit

Family Cites Families (2)

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Publication number Priority date Publication date Assignee Title
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
JPS4952980A (en) * 1972-09-22 1974-05-23

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
FR2103427A1 (en) * 1970-08-21 1972-04-14 Motorola Inc
FR2110392A1 (en) * 1970-10-13 1972-06-02 Siemens Ag
US3995177A (en) * 1973-01-02 1976-11-30 Fairchild Camera And Instrument Corporation Electronic watch
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4068134A (en) * 1975-06-16 1978-01-10 Hewlett-Packard Company Barrier height voltage reference
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit

Non-Patent Citations (1)

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Title
EXBK/76 *

Also Published As

Publication number Publication date
DE2954543C2 (en) 1990-04-12
CH672391GA3 (en) 1989-11-30
MY8400375A (en) 1984-12-31
MY8500671A (en) 1985-12-31
NL7901335A (en) 1979-09-11
SG41784G (en) 1985-03-08
GB2016801A (en) 1979-09-26
HK35185A (en) 1985-05-17
HK8084A (en) 1984-02-01
IT1111987B (en) 1986-01-13
FR2447036B1 (en) 1986-10-17
HK36385A (en) 1985-05-17
GB2016801B (en) 1983-02-02
HK36485A (en) 1985-05-17
DE2906527A1 (en) 1979-10-18
MY8500672A (en) 1985-12-31
CH672391B5 (en) 1990-05-31
IT7920368A0 (en) 1979-02-20
CH657712A5 (en) 1986-09-15
CA1149081A (en) 1983-06-28
MY8500658A (en) 1985-12-31

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