GB1536618A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1536618A
GB1536618A GB47695/77A GB4769577A GB1536618A GB 1536618 A GB1536618 A GB 1536618A GB 47695/77 A GB47695/77 A GB 47695/77A GB 4769577 A GB4769577 A GB 4769577A GB 1536618 A GB1536618 A GB 1536618A
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
implantation
ion implanting
region
atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB47695/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1536618A publication Critical patent/GB1536618A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
GB47695/77A 1976-12-06 1977-11-16 Semiconductor devices Expired GB1536618A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/748,035 US4111719A (en) 1976-12-06 1976-12-06 Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium

Publications (1)

Publication Number Publication Date
GB1536618A true GB1536618A (en) 1978-12-20

Family

ID=25007704

Family Applications (1)

Application Number Title Priority Date Filing Date
GB47695/77A Expired GB1536618A (en) 1976-12-06 1977-11-16 Semiconductor devices

Country Status (14)

Country Link
US (2) US4111719A (enExample)
JP (1) JPS5370668A (enExample)
AU (1) AU507591B2 (enExample)
BE (1) BE860359A (enExample)
BR (1) BR7707919A (enExample)
CA (1) CA1075831A (enExample)
CH (1) CH623685A5 (enExample)
DE (1) DE2752439C3 (enExample)
ES (1) ES464680A1 (enExample)
FR (1) FR2379162A1 (enExample)
GB (1) GB1536618A (enExample)
IT (1) IT1113672B (enExample)
NL (1) NL7713449A (enExample)
SE (1) SE425529B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133618A (en) * 1983-01-05 1984-07-25 Gen Electric Co Plc Fabricating semiconductor circuits
GB2215516A (en) * 1988-02-29 1989-09-20 Mitsubishi Electric Corp A method of producing a compound semiconductor device

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
JPS5935425A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
US4603471A (en) * 1984-09-06 1986-08-05 Fairchild Semiconductor Corporation Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions
US4728998A (en) * 1984-09-06 1988-03-01 Fairchild Semiconductor Corporation CMOS circuit having a reduced tendency to latch
US4837173A (en) * 1987-07-13 1989-06-06 Motorola, Inc. N-channel MOS transistors having source/drain regions with germanium
US4928156A (en) * 1987-07-13 1990-05-22 Motorola, Inc. N-channel MOS transistors having source/drain regions with germanium
US4835112A (en) * 1988-03-08 1989-05-30 Motorola, Inc. CMOS salicide process using germanium implantation
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5095358A (en) * 1990-04-18 1992-03-10 National Semiconductor Corporation Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon
US5298435A (en) * 1990-04-18 1994-03-29 National Semiconductor Corporation Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon
US5316958A (en) * 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5266510A (en) * 1990-08-09 1993-11-30 Micron Technology, Inc. High performance sub-micron p-channel transistor with germanium implant
US5108935A (en) * 1990-11-16 1992-04-28 Texas Instruments Incorporated Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities
US5108954A (en) * 1991-09-23 1992-04-28 Micron Technology, Inc. Method of reducing contact resistance at silicide/active area interfaces and semiconductor devices produced according to the method
US5420055A (en) * 1992-01-22 1995-05-30 Kopin Corporation Reduction of parasitic effects in floating body MOSFETs
US5426069A (en) * 1992-04-09 1995-06-20 Dalsa Inc. Method for making silicon-germanium devices using germanium implantation
KR0123434B1 (ko) * 1994-02-07 1997-11-26 천성순 실리콘 웨이퍼에서의 부정합전위의 발생을 억제화하기 위한 링패턴 형성방법 및 그 구조
JP3243146B2 (ja) 1994-12-08 2002-01-07 株式会社東芝 半導体装置
WO1999053553A2 (en) * 1998-04-09 1999-10-21 Koninklijke Philips Electronics N.V. Semiconductor device having a rectifying junction and method of manufacturing same
US6030863A (en) * 1998-09-11 2000-02-29 Taiwan Semiconductor Manufacturing Company Germanium and arsenic double implanted pre-amorphization process for salicide technology
US6262456B1 (en) 1998-11-06 2001-07-17 Advanced Micro Devices, Inc. Integrated circuit having transistors with different threshold voltages
US6114206A (en) * 1998-11-06 2000-09-05 Advanced Micro Devices, Inc. Multiple threshold voltage transistor implemented by a damascene process
GB9826519D0 (en) * 1998-12-02 1999-01-27 Arima Optoelectronics Corp Semiconductor devices
US20040121524A1 (en) * 2002-12-20 2004-06-24 Micron Technology, Inc. Apparatus and method for controlling diffusion
US7297617B2 (en) * 2003-04-22 2007-11-20 Micron Technology, Inc. Method for controlling diffusion in semiconductor regions
US7253071B2 (en) * 2004-06-02 2007-08-07 Taiwan Semiconductor Manufacturing Company Methods for enhancing the formation of nickel mono-silicide by reducing the formation of nickel di-silicide
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
WO2021163175A1 (en) * 2020-02-11 2021-08-19 QROMIS, Inc. Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL107344C (enExample) * 1955-03-23
US3485684A (en) * 1967-03-30 1969-12-23 Trw Semiconductors Inc Dislocation enhancement control of silicon by introduction of large diameter atomic metals
US3836999A (en) * 1970-09-21 1974-09-17 Semiconductor Res Found Semiconductor with grown layer relieved in lattice strain
US3943016A (en) * 1970-12-07 1976-03-09 General Electric Company Gallium-phosphorus simultaneous diffusion process
NL161920C (nl) * 1971-03-12 1980-03-17 Hitachi Ltd Werkwijze voor het vervaardigen van een half- geleiderinrichting, waarbij de roostervervorming t.g.v. doteerstoffen wordt gecompenseerd.
JPS50116274A (enExample) * 1974-02-27 1975-09-11

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133618A (en) * 1983-01-05 1984-07-25 Gen Electric Co Plc Fabricating semiconductor circuits
GB2215516A (en) * 1988-02-29 1989-09-20 Mitsubishi Electric Corp A method of producing a compound semiconductor device
GB2215516B (en) * 1988-02-29 1990-11-28 Mitsubishi Electric Corp A method of producing a compound semiconductor device

Also Published As

Publication number Publication date
BR7707919A (pt) 1978-09-05
FR2379162A1 (fr) 1978-08-25
DE2752439A1 (de) 1978-06-08
IT1113672B (it) 1986-01-20
US4137103A (en) 1979-01-30
ES464680A1 (es) 1979-01-01
NL7713449A (nl) 1978-06-08
SE7713736L (sv) 1978-06-07
JPS5370668A (en) 1978-06-23
US4111719A (en) 1978-09-05
BE860359A (fr) 1978-02-15
CH623685A5 (enExample) 1981-06-15
AU507591B2 (en) 1980-02-21
CA1075831A (en) 1980-04-15
FR2379162B1 (enExample) 1980-12-19
SE425529B (sv) 1982-10-04
DE2752439B2 (de) 1980-05-22
DE2752439C3 (de) 1981-01-29
AU3034977A (en) 1979-05-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee