GB2215516B - A method of producing a compound semiconductor device - Google Patents

A method of producing a compound semiconductor device

Info

Publication number
GB2215516B
GB2215516B GB8818768A GB8818768A GB2215516B GB 2215516 B GB2215516 B GB 2215516B GB 8818768 A GB8818768 A GB 8818768A GB 8818768 A GB8818768 A GB 8818768A GB 2215516 B GB2215516 B GB 2215516B
Authority
GB
United Kingdom
Prior art keywords
producing
semiconductor device
compound semiconductor
compound
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8818768A
Other versions
GB8818768D0 (en
GB2215516A (en
Inventor
Teruyuki Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB8818768D0 publication Critical patent/GB8818768D0/en
Publication of GB2215516A publication Critical patent/GB2215516A/en
Application granted granted Critical
Publication of GB2215516B publication Critical patent/GB2215516B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/2656—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
GB8818768A 1988-02-29 1988-08-08 A method of producing a compound semiconductor device Expired - Fee Related GB2215516B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63047335A JPH01220822A (en) 1988-02-29 1988-02-29 Manufacture of compound semiconductor device

Publications (3)

Publication Number Publication Date
GB8818768D0 GB8818768D0 (en) 1988-09-07
GB2215516A GB2215516A (en) 1989-09-20
GB2215516B true GB2215516B (en) 1990-11-28

Family

ID=12772339

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8818768A Expired - Fee Related GB2215516B (en) 1988-02-29 1988-08-08 A method of producing a compound semiconductor device

Country Status (3)

Country Link
JP (1) JPH01220822A (en)
FR (1) FR2627901B1 (en)
GB (1) GB2215516B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5141879A (en) * 1989-08-28 1992-08-25 Herbert Goronkin Method of fabricating a FET having a high trap concentration interface layer
DE4114162A1 (en) * 1990-05-02 1991-11-07 Nippon Sheet Glass Co Ltd METHOD FOR PRODUCING A POLYCRYSTALLINE SEMICONDUCTOR FILM
US8629013B2 (en) * 2011-10-14 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Junction leakage reduction through implantation

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1238729A (en) * 1967-09-11 1971-07-07
GB1239044A (en) * 1967-12-26 1971-07-14
GB1269359A (en) * 1968-08-22 1972-04-06 Atomic Energy Authority Uk Improvements in or relating to semiconductors and methods of doping semiconductors
GB1280199A (en) * 1968-12-27 1972-07-05 Hitachi Ltd Method for producing semiconductor device utilizing ion implantation
US3914784A (en) * 1973-12-10 1975-10-21 Hughes Aircraft Co Ion Implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
GB1456437A (en) * 1973-01-31 1976-11-24 Nippon Electric Co Compound semiconductor layers
GB1484399A (en) * 1976-05-04 1977-09-01 Standard Telephones Cables Ltd Method of annealing a body of iron-implanted semiconducto
GB1504017A (en) * 1974-12-06 1978-03-15 Hughes Aircraft Co Field effect device
GB1536618A (en) * 1976-12-06 1978-12-20 Ibm Semiconductor devices
US4383869A (en) * 1981-06-15 1983-05-17 Rca Corporation Method for enhancing electron mobility in GaAs
EP0111085A2 (en) * 1982-11-10 1984-06-20 International Business Machines Corporation Ion implantation process for compound semiconductor
US4545824A (en) * 1981-11-26 1985-10-08 Michel Salvi Process for producing a GaAs or InP semiconductor by pre-implantation followed by transition metal diffusion

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525028A1 (en) * 1982-04-09 1983-10-14 Chauffage Nouvelles Tech PROCESS FOR PRODUCING FIELD EFFECT TRANSISTORS IN GAAS BY IONIC IMPLANTATIONS AND TRANSISTORS THUS OBTAINED
JPS6047428A (en) * 1983-08-26 1985-03-14 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1238729A (en) * 1967-09-11 1971-07-07
GB1239044A (en) * 1967-12-26 1971-07-14
GB1269359A (en) * 1968-08-22 1972-04-06 Atomic Energy Authority Uk Improvements in or relating to semiconductors and methods of doping semiconductors
GB1280199A (en) * 1968-12-27 1972-07-05 Hitachi Ltd Method for producing semiconductor device utilizing ion implantation
GB1456437A (en) * 1973-01-31 1976-11-24 Nippon Electric Co Compound semiconductor layers
US3914784A (en) * 1973-12-10 1975-10-21 Hughes Aircraft Co Ion Implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
GB1504017A (en) * 1974-12-06 1978-03-15 Hughes Aircraft Co Field effect device
GB1484399A (en) * 1976-05-04 1977-09-01 Standard Telephones Cables Ltd Method of annealing a body of iron-implanted semiconducto
GB1536618A (en) * 1976-12-06 1978-12-20 Ibm Semiconductor devices
US4137103A (en) * 1976-12-06 1979-01-30 International Business Machines Corporation Silicon integrated circuit region containing implanted arsenic and germanium
US4383869A (en) * 1981-06-15 1983-05-17 Rca Corporation Method for enhancing electron mobility in GaAs
US4545824A (en) * 1981-11-26 1985-10-08 Michel Salvi Process for producing a GaAs or InP semiconductor by pre-implantation followed by transition metal diffusion
EP0111085A2 (en) * 1982-11-10 1984-06-20 International Business Machines Corporation Ion implantation process for compound semiconductor

Also Published As

Publication number Publication date
GB8818768D0 (en) 1988-09-07
GB2215516A (en) 1989-09-20
JPH01220822A (en) 1989-09-04
FR2627901B1 (en) 1994-04-29
FR2627901A1 (en) 1989-09-01

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19950809

PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990808