JPS5759374A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5759374A JPS5759374A JP55134423A JP13442380A JPS5759374A JP S5759374 A JPS5759374 A JP S5759374A JP 55134423 A JP55134423 A JP 55134423A JP 13442380 A JP13442380 A JP 13442380A JP S5759374 A JPS5759374 A JP S5759374A
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- facing
- injector
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003321 amplification Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To decrease a returning current without increasing an area of a collector region in a base region of a vertical transistor constituting I<2>L, by forming a part facing an injector shallower than the base region proper. CONSTITUTION:In the base region 5 of the vertical transistor Tr1, the depth of the part 5a facing an emitter region 4 of a lateral transistor Tr2 constituting the injector is made to be shallow. Such a constitution can be formed by forming the base region 5 by diffusing the base, then forming an N<+> type collector region, and implanting ions of P type impurities into the shallow region of the facing part 5a. Since the side 7 of the base facing the emitter region is formed in the shallow depth, the current returning to the injector from the base during the operation is reduced, and the amplification factor of the I<2>L is enhanced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55134423A JPS5759374A (en) | 1980-09-29 | 1980-09-29 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55134423A JPS5759374A (en) | 1980-09-29 | 1980-09-29 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5759374A true JPS5759374A (en) | 1982-04-09 |
Family
ID=15128030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55134423A Pending JPS5759374A (en) | 1980-09-29 | 1980-09-29 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5759374A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2466267A1 (en) * | 1979-10-03 | 1981-04-10 | Xerox Corp | DEVICE AND METHOD FOR EXTRACTING OZONE |
-
1980
- 1980-09-29 JP JP55134423A patent/JPS5759374A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2466267A1 (en) * | 1979-10-03 | 1981-04-10 | Xerox Corp | DEVICE AND METHOD FOR EXTRACTING OZONE |
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