GB1442930A - Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals - Google Patents
Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystalsInfo
- Publication number
- GB1442930A GB1442930A GB3955974A GB3955974A GB1442930A GB 1442930 A GB1442930 A GB 1442930A GB 3955974 A GB3955974 A GB 3955974A GB 3955974 A GB3955974 A GB 3955974A GB 1442930 A GB1442930 A GB 1442930A
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacture
- shaped
- conductive silicon
- gallium
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2407697A DE2407697C3 (de) | 1974-02-18 | 1974-02-18 | Verfahren zum Herstellen eines homogen Ga-dotierten Siliciumeinkristalls |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1442930A true GB1442930A (en) | 1976-07-14 |
Family
ID=5907718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3955974A Expired GB1442930A (en) | 1974-02-18 | 1974-09-11 | Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5329572B2 (es) |
| AT (1) | AT339379B (es) |
| BE (1) | BE816719A (es) |
| DE (1) | DE2407697C3 (es) |
| DK (1) | DK658274A (es) |
| FR (1) | FR2261055B1 (es) |
| GB (1) | GB1442930A (es) |
| IT (1) | IT1031627B (es) |
| NL (1) | NL7410745A (es) |
| PL (1) | PL91842B1 (es) |
| SU (1) | SU717999A3 (es) |
| ZA (1) | ZA746269B (es) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9799736B1 (en) | 2016-07-20 | 2017-10-24 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
-
1974
- 1974-02-18 DE DE2407697A patent/DE2407697C3/de not_active Expired
- 1974-06-21 BE BE145761A patent/BE816719A/xx unknown
- 1974-08-09 NL NL7410745A patent/NL7410745A/xx not_active Application Discontinuation
- 1974-08-14 AT AT667874A patent/AT339379B/de active
- 1974-09-11 GB GB3955974A patent/GB1442930A/en not_active Expired
- 1974-09-25 PL PL1974174329A patent/PL91842B1/pl unknown
- 1974-10-02 ZA ZA00746269A patent/ZA746269B/xx unknown
- 1974-12-17 DK DK658274A patent/DK658274A/da unknown
-
1975
- 1975-02-11 IT IT20138/75A patent/IT1031627B/it active
- 1975-02-12 JP JP1777675A patent/JPS5329572B2/ja not_active Expired
- 1975-02-17 FR FR7504804A patent/FR2261055B1/fr not_active Expired
- 1975-02-17 SU SU752106377A patent/SU717999A3/ru active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9799736B1 (en) | 2016-07-20 | 2017-10-24 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
| US10361306B2 (en) | 2016-07-20 | 2019-07-23 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
Also Published As
| Publication number | Publication date |
|---|---|
| SU717999A3 (ru) | 1980-02-25 |
| ZA746269B (en) | 1975-10-29 |
| JPS50120253A (es) | 1975-09-20 |
| JPS5329572B2 (es) | 1978-08-22 |
| DE2407697A1 (de) | 1975-09-18 |
| IT1031627B (it) | 1979-05-10 |
| BE816719A (fr) | 1974-10-16 |
| FR2261055A1 (es) | 1975-09-12 |
| DK658274A (es) | 1975-10-27 |
| NL7410745A (nl) | 1975-08-20 |
| AT339379B (de) | 1977-10-10 |
| FR2261055B1 (es) | 1979-01-05 |
| PL91842B1 (es) | 1977-03-31 |
| DE2407697B2 (de) | 1978-04-06 |
| DE2407697C3 (de) | 1978-11-30 |
| ATA667874A (de) | 1977-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4684413A (en) | Method for increasing the switching speed of a semiconductor device by neutron irradiation | |
| US2957789A (en) | Semiconductor devices and methods of preparing the same | |
| JPS56135969A (en) | Manufacture of semiconductor device | |
| US3967982A (en) | Method of doping a semiconductor layer | |
| GB1308634A (en) | Energy converter | |
| GB1056919A (en) | Process for growing semiconductor crystals | |
| GB1487519A (en) | Production of homogeneously doped p-conductive semi-conductor material | |
| GB931992A (en) | Improvements in or relating to methods of manufacturing crystalline semi-conductor material | |
| GB902559A (en) | A process for use in the production of a semi-conductor device | |
| GB1442930A (en) | Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals | |
| CA1045523A (en) | N-conductivity silicon mono-crystals produced by neutron irradiation | |
| JPS6295820A (ja) | イオン打込み方法 | |
| US4277307A (en) | Method of restoring Si crystal lattice order after neutron irradiation | |
| GB988341A (en) | A process for the production of a p-doped zone in a body of semi-conductor material | |
| GB979554A (en) | A method of diffusing a conductivity-affecting impurity into a semiconductor compound | |
| JPS58182816A (ja) | シリコン系半導体材料の再結晶方法 | |
| US3671330A (en) | Removal of acceptor impurities from high purity germanium | |
| GB953031A (en) | A process for use in the production of a semi-conductor device | |
| JPS52109865A (en) | Inpurity adding method to silicon | |
| JPS5262200A (en) | Single crystal of gallium arsenide without dislocation | |
| Pavlov et al. | Diffusion of Aluminum in Plastically Deformed Silicon | |
| JPS5533020A (en) | Manufacture of semiconductor device | |
| GB908846A (en) | Method of passivating a silicon semiconductor surface | |
| US3239393A (en) | Method for producing semiconductor articles | |
| CA1072423A (en) | Method of producing homogeneously doped semiconductor material of p-conductivity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |