BE816719A - Procede de fabrication de monocristaux de silicium de conductivite de type p a dopage homogene - Google Patents

Procede de fabrication de monocristaux de silicium de conductivite de type p a dopage homogene

Info

Publication number
BE816719A
BE816719A BE145761A BE145761A BE816719A BE 816719 A BE816719 A BE 816719A BE 145761 A BE145761 A BE 145761A BE 145761 A BE145761 A BE 145761A BE 816719 A BE816719 A BE 816719A
Authority
BE
Belgium
Prior art keywords
conductivity
manufacturing
type
silicon single
single crystals
Prior art date
Application number
BE145761A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE816719A publication Critical patent/BE816719A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/261Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20Doping by irradiation with electromagnetic waves or by particle radiation
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
BE145761A 1974-02-18 1974-06-21 Procede de fabrication de monocristaux de silicium de conductivite de type p a dopage homogene BE816719A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2407697A DE2407697C3 (de) 1974-02-18 1974-02-18 Verfahren zum Herstellen eines homogen Ga-dotierten Siliciumeinkristalls

Publications (1)

Publication Number Publication Date
BE816719A true BE816719A (fr) 1974-10-16

Family

ID=5907718

Family Applications (1)

Application Number Title Priority Date Filing Date
BE145761A BE816719A (fr) 1974-02-18 1974-06-21 Procede de fabrication de monocristaux de silicium de conductivite de type p a dopage homogene

Country Status (12)

Country Link
JP (1) JPS5329572B2 (es)
AT (1) AT339379B (es)
BE (1) BE816719A (es)
DE (1) DE2407697C3 (es)
DK (1) DK658274A (es)
FR (1) FR2261055B1 (es)
GB (1) GB1442930A (es)
IT (1) IT1031627B (es)
NL (1) NL7410745A (es)
PL (1) PL91842B1 (es)
SU (1) SU717999A3 (es)
ZA (1) ZA746269B (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799736B1 (en) 2016-07-20 2017-10-24 International Business Machines Corporation High acceptor level doping in silicon germanium

Also Published As

Publication number Publication date
SU717999A3 (ru) 1980-02-25
GB1442930A (en) 1976-07-14
ZA746269B (en) 1975-10-29
JPS50120253A (es) 1975-09-20
JPS5329572B2 (es) 1978-08-22
DE2407697A1 (de) 1975-09-18
IT1031627B (it) 1979-05-10
FR2261055A1 (es) 1975-09-12
DK658274A (es) 1975-10-27
NL7410745A (nl) 1975-08-20
AT339379B (de) 1977-10-10
FR2261055B1 (es) 1979-01-05
PL91842B1 (es) 1977-03-31
DE2407697B2 (de) 1978-04-06
DE2407697C3 (de) 1978-11-30
ATA667874A (de) 1977-02-15

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