BE846378A - Procede de fabrication de silicium a dopage - Google Patents
Procede de fabrication de silicium a dopageInfo
- Publication number
- BE846378A BE846378A BE170771A BE170771A BE846378A BE 846378 A BE846378 A BE 846378A BE 170771 A BE170771 A BE 170771A BE 170771 A BE170771 A BE 170771A BE 846378 A BE846378 A BE 846378A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing process
- doping silicon
- silicon manufacturing
- doping
- silicon
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/165—Transmutation doping
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2552621A DE2552621C3 (de) | 1975-11-24 | 1975-11-24 | Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstandes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE846378A true BE846378A (fr) | 1977-01-17 |
Family
ID=5962486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE170771A BE846378A (fr) | 1975-11-24 | 1976-09-20 | Procede de fabrication de silicium a dopage |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4119441A (fr) |
| BE (1) | BE846378A (fr) |
| CA (1) | CA1082574A (fr) |
| DE (1) | DE2552621C3 (fr) |
| SU (1) | SU747403A3 (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2753488C2 (de) * | 1977-12-01 | 1986-06-19 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung |
| US4348351A (en) * | 1980-04-21 | 1982-09-07 | Monsanto Company | Method for producing neutron doped silicon having controlled dopant variation |
| JPS5958866A (ja) * | 1982-09-28 | 1984-04-04 | Mitsubishi Electric Corp | サイリスタ |
| DE3511363A1 (de) * | 1985-03-28 | 1986-10-09 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von bereichen mit einstellbarer, gleichfoermiger dotierung in siliziumkristallscheiben durch neutronenbestrahlung sowie verwendung dieses verfahrens zur herstellung von leistungsthyristoren |
| AU2003272882A1 (en) * | 2002-09-19 | 2004-04-08 | Showa Denko K.K. | Silicon carbide single crystal and method and apparatus for producing the same |
| WO2004073057A1 (fr) * | 2003-02-14 | 2004-08-26 | Sumitomo Mitsubishi Silicon Corporation | Procede de fabrication d'une tranche de silicium |
| US10468148B2 (en) | 2017-04-24 | 2019-11-05 | Infineon Technologies Ag | Apparatus and method for neutron transmutation doping of semiconductor wafers |
| RU2646411C1 (ru) * | 2017-06-09 | 2018-03-05 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | Способ получения кремния с изотопическим составом 28Si, 30Si |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3255050A (en) * | 1962-03-23 | 1966-06-07 | Carl N Klahr | Fabrication of semiconductor devices by transmutation doping |
| DE2433991A1 (de) * | 1974-07-15 | 1976-02-05 | Siemens Ag | Verfahren zum dotieren einer halbleiterschicht |
-
1975
- 1975-11-24 DE DE2552621A patent/DE2552621C3/de not_active Expired
-
1976
- 1976-09-20 BE BE170771A patent/BE846378A/fr not_active IP Right Cessation
- 1976-10-12 US US05/731,440 patent/US4119441A/en not_active Expired - Lifetime
- 1976-11-15 SU SU762419003A patent/SU747403A3/ru active
- 1976-11-19 CA CA266,127A patent/CA1082574A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4119441A (en) | 1978-10-10 |
| CA1082574A (fr) | 1980-07-29 |
| SU747403A3 (ru) | 1980-07-23 |
| DE2552621B2 (fr) | 1979-01-11 |
| DE2552621C3 (de) | 1979-09-13 |
| DE2552621A1 (de) | 1977-05-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: SIEMENS A.G. Effective date: 19850930 |