ATA667874A - Verfahren zum herstellen von homogen dotierten siliziumeinkristallen mit p-leitfahigkeit - Google Patents

Verfahren zum herstellen von homogen dotierten siliziumeinkristallen mit p-leitfahigkeit

Info

Publication number
ATA667874A
ATA667874A AT667874A AT667874A ATA667874A AT A667874 A ATA667874 A AT A667874A AT 667874 A AT667874 A AT 667874A AT 667874 A AT667874 A AT 667874A AT A667874 A ATA667874 A AT A667874A
Authority
AT
Austria
Prior art keywords
conductivity
doped silicon
silicon crystals
producing homogenous
homogenous doped
Prior art date
Application number
AT667874A
Other languages
English (en)
Other versions
AT339379B (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA667874A publication Critical patent/ATA667874A/de
Application granted granted Critical
Publication of AT339379B publication Critical patent/AT339379B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/261Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20Doping by irradiation with electromagnetic waves or by particle radiation
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
AT667874A 1974-02-18 1974-08-14 Verfahren zum herstellen von homogen dotierten siliziumeinkristallen mit p-leitfahigkeit AT339379B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2407697A DE2407697C3 (de) 1974-02-18 1974-02-18 Verfahren zum Herstellen eines homogen Ga-dotierten Siliciumeinkristalls

Publications (2)

Publication Number Publication Date
ATA667874A true ATA667874A (de) 1977-02-15
AT339379B AT339379B (de) 1977-10-10

Family

ID=5907718

Family Applications (1)

Application Number Title Priority Date Filing Date
AT667874A AT339379B (de) 1974-02-18 1974-08-14 Verfahren zum herstellen von homogen dotierten siliziumeinkristallen mit p-leitfahigkeit

Country Status (12)

Country Link
JP (1) JPS5329572B2 (de)
AT (1) AT339379B (de)
BE (1) BE816719A (de)
DE (1) DE2407697C3 (de)
DK (1) DK658274A (de)
FR (1) FR2261055B1 (de)
GB (1) GB1442930A (de)
IT (1) IT1031627B (de)
NL (1) NL7410745A (de)
PL (1) PL91842B1 (de)
SU (1) SU717999A3 (de)
ZA (1) ZA746269B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799736B1 (en) 2016-07-20 2017-10-24 International Business Machines Corporation High acceptor level doping in silicon germanium

Also Published As

Publication number Publication date
SU717999A3 (ru) 1980-02-25
GB1442930A (en) 1976-07-14
ZA746269B (en) 1975-10-29
JPS50120253A (de) 1975-09-20
JPS5329572B2 (de) 1978-08-22
DE2407697A1 (de) 1975-09-18
IT1031627B (it) 1979-05-10
BE816719A (fr) 1974-10-16
FR2261055A1 (de) 1975-09-12
DK658274A (de) 1975-10-27
NL7410745A (nl) 1975-08-20
AT339379B (de) 1977-10-10
FR2261055B1 (de) 1979-01-05
PL91842B1 (de) 1977-03-31
DE2407697B2 (de) 1978-04-06
DE2407697C3 (de) 1978-11-30

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