GB908846A - Method of passivating a silicon semiconductor surface - Google Patents
Method of passivating a silicon semiconductor surfaceInfo
- Publication number
- GB908846A GB908846A GB36995/60A GB3699560A GB908846A GB 908846 A GB908846 A GB 908846A GB 36995/60 A GB36995/60 A GB 36995/60A GB 3699560 A GB3699560 A GB 3699560A GB 908846 A GB908846 A GB 908846A
- Authority
- GB
- United Kingdom
- Prior art keywords
- tube
- silane
- wafer
- lines
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 3
- 229910000077 silane Inorganic materials 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 230000032050 esterification Effects 0.000 abstract 2
- 238000005886 esterification reaction Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 239000012494 Quartz wool Substances 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 235000019441 ethanol Nutrition 0.000 abstract 1
- DFJDZTPFNSXNAX-UHFFFAOYSA-N ethoxy(triethyl)silane Chemical compound CCO[Si](CC)(CC)CC DFJDZTPFNSXNAX-UHFFFAOYSA-N 0.000 abstract 1
- 125000005909 ethyl alcohol group Chemical group 0.000 abstract 1
- -1 hydroxyl ions Chemical class 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- XPDGHGYGTJOTBC-UHFFFAOYSA-N methoxy(methyl)silicon Chemical compound CO[Si]C XPDGHGYGTJOTBC-UHFFFAOYSA-N 0.000 abstract 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 abstract 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- FBGNFSBDYRZOSE-UHFFFAOYSA-N tris(ethenyl)-ethoxysilane Chemical compound CCO[Si](C=C)(C=C)C=C FBGNFSBDYRZOSE-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Abstract
908,846. Semi-conductor devices. PACIFIC SEMICONDUCTORS Inc. Oct. 27, 1960 [Jan. 4, 1960], No. 36995/60. Class 37. A silicon semi-conductor body is protected from moisture and undesirable impurities by forming an oxide layer on its surface and then treating the oxide layer with an esterifying agent. Particularly suitable esterifying agents suggested are methyl and ethyl alcohols, trimethylmethoxysilane, triethylethoxysilane, and trivinylethoxysilane but many others are mentioned. Diodes protected in this way are made by the following steps. Boron is first diffused into one surface of a 40 ohm. cm. N-type silicon wafer to form a junction therein. The diffused surface is masked, a grid of lines scribed through the masking, and the surface exposed to an etch until the lines extend through the junction to provide a series of discrete P-type mesas. After removal of the masking the wafer is heated at 1000‹ C. for 2 hours in oxygen at ¥ of an atmosphere pressure to produce a silicon dioxide film 1000-10,000 Š thick. After removal of the film from the upper and lower surfaces the wafer is broken up along the lines into separate PN elements to which gold-plated nickel ribbons 40, 41 (Fig. 6) are then welded. The elements are next placed on quartz wool 51 in tube 50 which is evacuated via tube 55. During this process the methylmethoxysilane is frozen in container 62 by liquid nitrogen 66. The liquid nitrogen is moved to surround base of tube 50 so that the silane distils over to form pool 70. The tube is then sealed off at 72, mounted in an autoclave containing the silane to equalize the internal and external pressures on the tube and heated to 250‹ C. for 16 hours, during which the pressure in the tube is 200- 350 p.s.i. The final protective layer 90 (Fig. 6) is subsequently formed by the method described in U.S.A. Specification 2,913,358. As an alternative the oxide film is formed by a process identical to that used in the esterification step except that deionized water is used in place of the silane. A theoretical explanation of the esterification process is given in terms of the reaction with hydroxyl ions of water atoms trapped on the surface.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35360A | 1960-01-04 | 1960-01-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB908846A true GB908846A (en) | 1962-10-24 |
Family
ID=21691151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB36995/60A Expired GB908846A (en) | 1960-01-04 | 1960-10-27 | Method of passivating a silicon semiconductor surface |
Country Status (3)
| Country | Link |
|---|---|
| FR (1) | FR1273319A (en) |
| GB (1) | GB908846A (en) |
| NL (1) | NL256986A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0184239A1 (en) * | 1984-11-21 | 1986-06-11 | Koninklijke Philips Electronics N.V. | Passive display device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1211499A (en) * | 1969-03-07 | 1970-11-04 | Standard Telephones Cables Ltd | A method of manufacturing semiconductor devices |
| NL8702352A (en) * | 1987-10-02 | 1989-05-01 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
-
0
- NL NL256986D patent/NL256986A/xx unknown
-
1960
- 1960-10-27 GB GB36995/60A patent/GB908846A/en not_active Expired
- 1960-11-10 FR FR843716A patent/FR1273319A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0184239A1 (en) * | 1984-11-21 | 1986-06-11 | Koninklijke Philips Electronics N.V. | Passive display device |
Also Published As
| Publication number | Publication date |
|---|---|
| NL256986A (en) | |
| FR1273319A (en) | 1961-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1262967A (en) | Method of treating semiconductor devices to improve lifetime | |
| GB959447A (en) | Semiconductor devices | |
| GB809521A (en) | Fused junction semiconductor devices and method of making the same | |
| ES449145A1 (en) | Elimination of stacking faults in silicon devices: a gettering process | |
| GB1198569A (en) | Semiconductor Junction Device. | |
| ES2004414A6 (en) | Production of semiconductor devices. | |
| NL127213C (en) | ||
| ES442102A1 (en) | Semiconductor device with two passivating layers | |
| GB1307546A (en) | Methods of manufacturing semiconductor devices | |
| GB902559A (en) | A process for use in the production of a semi-conductor device | |
| GB908846A (en) | Method of passivating a silicon semiconductor surface | |
| GB1206371A (en) | The etching of silicon semiconductor wafers and semiconductor devices incorporating such wafers | |
| GB968106A (en) | Improvements in or relating to semiconductor devices | |
| GB969969A (en) | Improvements in and relating to the manufacture of semiconductor devices | |
| GB954989A (en) | Method of forming junction semiconductive devices having thin layers | |
| GB735986A (en) | Method of making p-n junction devices | |
| JPS54109765A (en) | Manufacture of semiconductor device | |
| GB940681A (en) | Semiconductor devices | |
| GB1061629A (en) | Semiconductor device fabrication | |
| GB1327204A (en) | Semiconductor devices | |
| GB1158585A (en) | Gate Controlled Switches | |
| GB1010697A (en) | Improvements in or relating to methods for the manufacture of semi-conductive p-n junction diodes and diodes produced thereby | |
| GB1013985A (en) | Semiconductor devices and methods of making them | |
| GB995527A (en) | Alloy-diffused transistor | |
| GB1327710A (en) | Method of manufacturing semiconductor components |