GB1010697A - Improvements in or relating to methods for the manufacture of semi-conductive p-n junction diodes and diodes produced thereby - Google Patents
Improvements in or relating to methods for the manufacture of semi-conductive p-n junction diodes and diodes produced therebyInfo
- Publication number
- GB1010697A GB1010697A GB4516262A GB4516262A GB1010697A GB 1010697 A GB1010697 A GB 1010697A GB 4516262 A GB4516262 A GB 4516262A GB 4516262 A GB4516262 A GB 4516262A GB 1010697 A GB1010697 A GB 1010697A
- Authority
- GB
- United Kingdom
- Prior art keywords
- plate
- enclosure
- diodes
- temperature
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 5
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract 2
- 239000012300 argon atmosphere Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000009835 boiling Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- -1 phosphorus anhydride Chemical class 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
Abstract
1,010,697. PN diodes. COMMISSARIAT A L'ENERGIE ATOMIQUE. Nov. 29, 1962 [Nov. 29, 1961], No. 45162/62. Drawings to Specification. Heading H1K. A PN junction silicon diode is made by diffusing donor material into a polished silicon plate in a furnace with two enclosures containing the plate and some phosphoric anhydride respectively in a constantly renewed argon atmosphere, the temperature of the first enclosure being increased at the rate of 30‹ C. per minute to between 850‹ and 1000‹ C., at which it remains for less than 4 hours, the second enclosure being at 225‹ C., whereupon the argon atmosphere is replaced by oxygen and the first enclosure temperature is reduced by 20‹ C. per minute, while the phosphoric anhydride is withdrawn, cooling under oxygen being continued until ambient temperature is reached. In the embodiment the silicon plate is cleaned successively in trichlorethylene, acetone and a nitric and hydrofluoric acid mixture then rinsed successively in acetic acid, boiling nitric acid and water. Phosphorus is then diffused into the plate from phosphorus anhydride as outlined above to form a thin N-type region and after withdrawal from the furnace the plate is washed in hydrofluoric acid to remove any oxide film. After etching in a mixture of nitric acid and hydrofluoric acids, a gold or aluminium electrode is applied. The device is then etched to mesa form.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR880395A FR1314516A (en) | 1961-11-29 | 1961-11-29 | Semiconductor device manufacturing process and resulting product |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1010697A true GB1010697A (en) | 1965-11-24 |
Family
ID=8767681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4516262A Expired GB1010697A (en) | 1961-11-29 | 1962-11-29 | Improvements in or relating to methods for the manufacture of semi-conductive p-n junction diodes and diodes produced thereby |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE625484A (en) |
| FR (1) | FR1314516A (en) |
| GB (1) | GB1010697A (en) |
| LU (1) | LU42752A1 (en) |
-
0
- BE BE625484D patent/BE625484A/xx unknown
-
1961
- 1961-11-29 FR FR880395A patent/FR1314516A/en not_active Expired
-
1962
- 1962-11-24 LU LU42752D patent/LU42752A1/xx unknown
- 1962-11-29 GB GB4516262A patent/GB1010697A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1314516A (en) | 1963-01-11 |
| BE625484A (en) | |
| LU42752A1 (en) | 1963-01-24 |
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