GB1001158A - Improvements in and relating to the electrical characteristics of p-n junctions in semi-conductor materials - Google Patents
Improvements in and relating to the electrical characteristics of p-n junctions in semi-conductor materialsInfo
- Publication number
- GB1001158A GB1001158A GB39279/61A GB3927961A GB1001158A GB 1001158 A GB1001158 A GB 1001158A GB 39279/61 A GB39279/61 A GB 39279/61A GB 3927961 A GB3927961 A GB 3927961A GB 1001158 A GB1001158 A GB 1001158A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- junctions
- relating
- electrical characteristics
- subjected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 239000012154 double-distilled water Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002966 varnish Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,001,158. Semi-conductor devices. LICENTIA PATENT-VERWALTUNGS G.m.b.H. Nov. 2, 1961, No. 39279/61. Heading H1K. A silicon or germanium body comprising a PN junction produced by alloying is etched and then subjected to a nitrogen atmosphere at a temperature of between 100 and 270 C. for a period between 1 and 30 minutes to stabilize the reverse current characteristic. The body may be washed in deionized or double distilled water after etching and may be temporarily exposed to oxygen after the nitrogen treatment. The body may then be covered with silicone varnish in the junction regions and subjected to further heat treatment between 280 and 300 C. for several hours. Heating may be effected by passing current through the body in the forward direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB39279/61A GB1001158A (en) | 1961-11-02 | 1961-11-02 | Improvements in and relating to the electrical characteristics of p-n junctions in semi-conductor materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB39279/61A GB1001158A (en) | 1961-11-02 | 1961-11-02 | Improvements in and relating to the electrical characteristics of p-n junctions in semi-conductor materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1001158A true GB1001158A (en) | 1965-08-11 |
Family
ID=10408684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB39279/61A Expired GB1001158A (en) | 1961-11-02 | 1961-11-02 | Improvements in and relating to the electrical characteristics of p-n junctions in semi-conductor materials |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1001158A (en) |
-
1961
- 1961-11-02 GB GB39279/61A patent/GB1001158A/en not_active Expired
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