JPS5262200A - Single crystal of gallium arsenide without dislocation - Google Patents

Single crystal of gallium arsenide without dislocation

Info

Publication number
JPS5262200A
JPS5262200A JP50138395A JP13839575A JPS5262200A JP S5262200 A JPS5262200 A JP S5262200A JP 50138395 A JP50138395 A JP 50138395A JP 13839575 A JP13839575 A JP 13839575A JP S5262200 A JPS5262200 A JP S5262200A
Authority
JP
Japan
Prior art keywords
dislocation
single crystal
gallium arsenide
concentration
specified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50138395A
Other languages
Japanese (ja)
Inventor
Keiichiro Fujita
Nobuhiro Kito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP50138395A priority Critical patent/JPS5262200A/en
Publication of JPS5262200A publication Critical patent/JPS5262200A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To produce GaAs single crystal whose area of cross section perpendicular to growing direction is equal or above 5cm<2> and whose concentration of dislocation is specified by doping silicon in high concentration so that carrier concentration has specified value.
JP50138395A 1975-11-17 1975-11-17 Single crystal of gallium arsenide without dislocation Pending JPS5262200A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50138395A JPS5262200A (en) 1975-11-17 1975-11-17 Single crystal of gallium arsenide without dislocation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50138395A JPS5262200A (en) 1975-11-17 1975-11-17 Single crystal of gallium arsenide without dislocation

Publications (1)

Publication Number Publication Date
JPS5262200A true JPS5262200A (en) 1977-05-23

Family

ID=15220933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50138395A Pending JPS5262200A (en) 1975-11-17 1975-11-17 Single crystal of gallium arsenide without dislocation

Country Status (1)

Country Link
JP (1) JPS5262200A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57200297A (en) * 1981-06-02 1982-12-08 Sumitomo Electric Ind Ltd Preparation of gaas single crystal with low dislocation density
JPS616200A (en) * 1984-06-19 1986-01-11 Furukawa Mining Co Ltd Process for doping crystal of gaas, inas, or the like with si
US5612014A (en) * 1994-08-10 1997-03-18 Sumitomo Electric Industries, Ltd. Compound semiconductor crystal
JPH10298000A (en) * 1997-04-28 1998-11-10 Dowa Mining Co Ltd Plate single crystal and its production
JP2006306723A (en) * 2006-06-22 2006-11-09 Dowa Mining Co Ltd Gallium arsenide single crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831020A (en) * 1971-08-26 1973-04-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831020A (en) * 1971-08-26 1973-04-24

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57200297A (en) * 1981-06-02 1982-12-08 Sumitomo Electric Ind Ltd Preparation of gaas single crystal with low dislocation density
JPH0460960B2 (en) * 1981-06-02 1992-09-29 Sumitomo Electric Industries
JPS616200A (en) * 1984-06-19 1986-01-11 Furukawa Mining Co Ltd Process for doping crystal of gaas, inas, or the like with si
US5612014A (en) * 1994-08-10 1997-03-18 Sumitomo Electric Industries, Ltd. Compound semiconductor crystal
US5728212A (en) * 1994-08-10 1998-03-17 Sumitomo Electric Industries, Ltd. Method of preparing compound semiconductor crystal
JPH10298000A (en) * 1997-04-28 1998-11-10 Dowa Mining Co Ltd Plate single crystal and its production
JP2006306723A (en) * 2006-06-22 2006-11-09 Dowa Mining Co Ltd Gallium arsenide single crystal
JP4586154B2 (en) * 2006-06-22 2010-11-24 Ｄｏｗａエレクトロニクス株式会社 Gallium arsenide single crystal manufacturing equipment

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